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In the promotion of global economic integration, Chinese enterprises began to enter the international engineering contracting market. As risk factors are more complex in international environment, risk management has become an important research topic at the moment. FMEA, shorted for Failure Modes and Effects Analysis, is applied to study the failure modes for each part of the product and to control risk in the first line of defense. Taking advantage of the idea of FMEA, contractors have to identify all the risk in international engineering and build a multi-level structure. On the basis of analytic hierarchy process, we calculate the risk relative importance and harm degree by analysis and assessment. Then take effective measures to avoid risk. With the combination of qualitative and quantitative methods, we try to form a risk management system for international project.

In this study, aluminum nitride, boron nitride, copper, aluminum, with aluminum extruded heat sink as a cooling way of thermoelectric chip. Heat sink temperature change observed and measured the thermoelectric chip output voltage and current. The results showed that with the aluminum extrusion heat sink will increase the efficiency of thermoelectric chip. Copper + aluminum extrusion heat sink, the average electric power increased 173.93%, while the aluminum + aluminum extruded heat sink mean power increased 212.25 %, while the AlN + aluminum extrusion heat sink fins as mean power increased 197.5 %, And the BN + aluminum extrusion heat sink as a heat sink, the average electric power increased 266.17 %.

The effect of a TiN interlayer on the crystalline quality of ($11\bar{2}2$) semipolar GaN grown on $m$-plane sapphire was studied by high-resolution X-ray diffraction (HRXRD). Before GaN growth, a TiN interlayer was formed by nitrided the Ti metal on the GaN seed layer. Symmetric and skew-symmetric HRXRD measurements demonstrate that both threading dislocation and basal plane stacking fault densities are reduced. Raman results also show an increased crystalline quality and a decreased threading dislocation density. ($11\bar{2}2$) semipolar GaN with an optimal Ti thickness of 2 nm has been obtained under the existing growth conditions.