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Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate
- Source :
- SCIENCE CHINA Information Sciences; June 2024, Vol. 67 Issue: 6
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 1674733X and 18691919
- Volume :
- 67
- Issue :
- 6
- Database :
- Supplemental Index
- Journal :
- SCIENCE CHINA Information Sciences
- Publication Type :
- Periodical
- Accession number :
- ejs66495327
- Full Text :
- https://doi.org/10.1007/s11432-024-4003-y