Search

We developed a stable and reproducible p-type P:ZnO thin film using a cost-effective solution-derived spin-on-doping (SOD) technique. We created a pure p-n heterojunction by depositing a highly transparent Ga2O3 thin film on P:ZnO for photodetector applications. The films’ surface morphology and thickness were analyzed using AFM and FEGSEM. At the same time, UV-visible (UV–Vis) and PL spectroscopy were employed to investigate their optical properties, including absorption, energy bandgap, and defect-related carrier transitions. The resulting P:ZnO/Ga2O3 heterojunction demonstrated excellent photo-response performance, with a responsivity of 4.76 A/W, detectivity of $10.13\times 10^{{12}}$ Jones, and rapid response speed. The device exhibited sensitivity to UV-C and UV–Vis wavelength regions, showcasing its potential for high-performance, dual-band, and low-power photodetectors.

In this work, the high pressure phase of titanium dioxide (TiO2‐II) film is grown with vapor‐liquid‐solid (VLS) method on <100>‐GaAs substrate by utilizing the natural process‐induced‐strain, originating from the thermo‐elastic mismatch between TiO2and GaAs in VLS process. The mismatches in thermal expansion coefficient and elastic constant of TiO2and GaAs are Δα≈55%and ΔY≈170%which incorporate a substantial amount of stress (≈GPa) during cooling from the growth temperature (500 °C). SEM imaging suggests the formation of a continuous film and cross‐sectional TEM image confirmed its high crystalline quality. XRD peaks at 2θ = 31.300and 58.670confirm the formation of [111] and [212]‐planes of TiO2‐II phase and its chemical states are analyzed from X‐ray photoelectron spectroscopy (XPS) measurements. The bandgap of TiO2‐II phase is estimated to be 2.88 eV from cathodoluminescence study for the first time which agrees satisfactorily with the theoretical predictions reported. The current work deals with the formation of most stable high pressure phaseof titanium dioxide, the TiO2‐II film with narrow bandgap (≈2.88 eV), on GaAs substrate by employing VLS method. Such novel approach does not require any external means to create high pressure ambience; rather utilizes the process‐induced strain originated due to inherent thermo‐elastic mismatch between TiO2and GaAs.