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Radio Frequency (RF) based heating application is used in multiple industries like drying cross-laminated woods, food and packaging, melting silicon etc. These industrial RF heating plants operate at frequencies of 6.78 MHz, 13.56 MHz, or 27.12 MHz (ISM band). Historically, the high frequency requirement has forced the industry to rely on vacuum tube based RF generator, which are only 60% efficient. Modern semiconductors like wide bandgap (WBG) devices have achieved the high frequency operation that is required to replace the inefficient vacuum tubes. However, a comprehensive study of load network for an industrial RF heating plant has not been undertaken such that an existing plant can be retrofitted with semiconductor based turn-key solution. In this paper the authors present design equations for an industrial RF dielectric heating load structure and suggest necessary modifications required to replace vacuum tube RF generator with voltage source converter (VSC). A new figure of merit (FOM) is defined that impacts the load structure efficiency. Finally, a small-scale prototype load is manufactured as a case study. The prototype demonstrated an output power of 750 W at 6.76 MHz with an overall efficiency of 90% from DC input to RF load which can not be achieved with a vacuum tube technology.

The use of power converters as solid state transformer is an attractive solution to modernize the power network, but this solution has not been fully addressed for MV and HV substations. This paper presents a customized and simple control for the Modular Multilevel Matrix Converter (M3C), specially conceived for its operation on synchronous ports, which is the case of AC substations. The control allows to transfer bidirectional active power, generate/absorb reactive power and provide ancillary services. The converter is compared to the back-to-back Modular Multilevel Converter (B2B-MMC) where the key performance indicators to carry out the comparison are power efficiency, number of semiconductor devices, passive components required, footprint, voltage cell balance, fault blocking capability and stress of components. The simulation results show the features, performance and attractiveness of the M3C topology in a 33/11 kV, 16 MW substation under different operating conditions, including grid faults and dynamic operation. The M3C presents similar efficiency and performance than the B2B-MMC, but it uses less semiconductor devices, passive components and total cell capacitor energy than the B2B-MMC, reducing cost and footprint. The experimental results show the performance of the M3C under less ideal conditions including a substation transformer saturation and power step response.

The advanced modulation scheme with reactive power injection is preferred in single-phase transformerless PV inverters, (e.g., H5, H6, and HERIC), which can achieve high efficiency as well as flexible power control capability. Considering the turn-on and turn-off periods of real semiconductor devices, the deadtime is indispensable between the switching of bridge switches to avoid the short-through phenomenon. The deadtime should be inserted into not only the switching state transition (in one switching cycle) but also the operation mode transition (in one grid cycle). Among, the deadtime insertion during the operation mode transition always causes current distortions at the AC voltage zero-cross point, or even fails the mode transition. Thus, this paper proposes an improved switching mode transition strategy to ensure the exact mode transition and the high power quality of PV inverters. Simulation and experiments have been carried out on a grid-connected transformerless PV inverter prototype, verifying the excellent performance on the power quality of the proposed technique.

In this paper, we consider a drift-diffusion charge transport model for perovskite solar cells, where electrons and holes may diffuse linearly (Boltzmann approximation) or nonlinearly (e.g. due to Fermi-Dirac statistics). To incorporate volume exclusion effects, we rely on the Fermi-Dirac integral of order −1 when modeling moving anionic vacancies within the perovskite layer which is sandwiched between electron and hole transport layers. After non-dimensionalization, we first prove a continuous entropy-dissipation inequality for the model. Then, we formulate a corresponding two-point flux finite volume scheme on Voronoi meshes and show an analogous discrete entropy-dissipation inequality. This inequality helps us to show the existence of a discrete solution of the nonlinear discrete system with the help of a corollary of Brouwer's fixed point theorem and the minimization of a convex functional. Finally, we verify our theoretically proven properties numerically, simulate a realistic device setup and show exponential decay in time with respect to the L2 error as well as a physically and analytically meaningful relative entropy.

The sequence and content of the stages of creating useful models for the creation and recombi-nation of electron flows using non-equilibrium states of electrons in a semiconductor plasma are formulated, which make it possible to implement superconducting protection of radio equipment of the Armed Forces of Ukraine., На цей час розроблено генератори потужних електромагнітних впливів тривалістю від одиниць до десятків наносекунд [лінійні індукційні прискорювачі електронів, релятивістські НВЧ-генератори з віртуальним катодом (віркатори), релятивістські магнетрони, НВЧ-генератори на основі надрозмірних електродинамічних структур (черенківські генератори та генератори дифракційного випромінювання)]. Ці генератори мають гігаватну пікову потужність, причому є реальні шляхи її збільшення у десятки разів. Такі генератори використовують у сучасних засобах електромагнітного ураження напівпровідникових радіотехнічних систем різного призначення (системи радіозвʼязку, військові радіотехнічні системи, супутникові системи тощо). Зазначені системи електромагнітного ураження дають змогу сформувати у просторі потужні (до 100 кВт) короткоімпульсні (тривалість менше одиниць мікросекунд) електромагнітні випромінювання. Сучасні засоби захисту радіотехнічних систем (РТС) від ураження електромагнітними впливами малої тривалості, які проникають через антенний тракт у приймач РТС, побудовані на газорозрядних та напівпровідникових приладах. У разі використання таких захисних електромагнітних пристроїв забезпечується надійний захист у випадку, якщо тривалість електромагнітного впливу не менша за їх час спрацьовування. Якщо час впливу менше, ніж час спрацьовування захисного пристрою, то потрібно вирішувати задачу створення захисного пристрою, який ґрунтується на інших фізичних принципах, у разі використання яких час спрацьовування стає меншим за тривалість проникаючого електромагнітного впливу. У зв’язку із цим найбільш перспективною є ідея використання фазового переходу з надпровідного у ненадпровідний (або резистивний) стан у високотемпературних надпровідниках. Для підвищення температури надпровідного переходу необхідно використовувати надпровідну напівпровідникову плазму.

With the advancement of the application of power converters in the power industry, the research towards the prominent power converter namely multilevel inverter has gained a lot of attraction. Here, a dual-source configured 11 level inverter topology is being discussed, which uses nine power semiconductor devices and one capacitor. The proposed topology is able to charge the capacitor up to 2Vdc which provides the boosting feature with the voltage gain of 1.67. An extended comparison with several other topologies has been provided which highlights the major contribution of the work. A low-power laboratory prototype has been used for the validation of the proposed 11 level topology. Further, a thorough assessment of comparable topologies has been conferred in detail. 2022 The Authors. IET Power Electronics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology. The authors acknowledge the support provided by King Abdullah City for Atomic and Renewable Energy (K.A.CARE) under K.A.CARE-King Abdulaziz University Collaboration Program. The Deanship of Scientific Research (DSR) at King Abdulaziz University, Jeddah, Saudi Arabia has funded this project, under grant no. (FP-108-43) and also the United Arab Emirates University (UAE-U) for supporting this research work through the AUA grants #12R022 and #31R280. Scopus

When assembling electronic complexes for medical purposes, it is important to install highly reliable semiconductor devices in electronic equipment. Experimental studies and the example of high-power bipolar transistors in this work show how you can select copies of an increased level of reliability for their subsequent installation in critical electronic devices. To select highly reliable samples, individual forecasting was used according to informative parameters measured for a particular sample at the initial moment in time. Experimental studies (training experiment) included measuring at the initial moment of time for each sample of transistors of electrical parameters, which may contain information on reliability, and then conducting accelerated tests of transistors for reliability for a time corresponding to normal operating conditions specified in the technical documentation. The training experiment is performed once and used to obtain a predictive rule, which is applied to other similar samples that did not participate in the training experiment. To obtain a predictive rule, the method of majority logic was used. Prediction is performed in the form of assigning a specific sample to the class of highly reliable samples for a given future operating time. To perform prediction, the values of the informative parameters are measured at the initial moment of time for a particular sample of interest, they are converted into binary numbers (zero or one) using the threshold values found from the results of the training experiment, and the decision on the correspondence of the sample to the class of highly reliable transistors is made by a set of binary numbers. To classify a sample as a highly reliable one, it is sufficient that the number of ones exceeds the number of zeros in the resulting set of binary numbers.

The modular multilevel converter is considered the state-of-the-art power electronic solution for high-power high-voltage applications that require a DC stage and that operate with fixed frequency at their AC terminals. However, in high-power AC-AC variable-frequency applications, it has been proved that this converter topology presents an unnecessarily large number of components and an intolerably high submodule-capacitor voltage ripple at low frequencies. The modular multilevel matrix converter was proposed as a promising alternative for high-power medium-voltage electrical-machine drives since it presented improved performance at low frequencies and a reduced number of components in comparison to the modular multilevel converter resulting in reduced costs and improved efficiency. Even though, the modular multilevel matrix converter is one of the converter solutions that stands out the most for high-power machine drives, it presents some operational drawbacks such the unstable behavior under unbalanced grid conditions and the extremely complex internal control and modulation. Recently, a new converter topology named modular multilevel series converter was proposed presenting attractive operational characteristics such as the high performance at low frequencies, high performance under unbalanced grid conditions, and straightforward control and modulation, which are important advantages compared to the modular multilevel converter and the modular multilevel matrix converter. Nonetheless, as demonstrated in this paper, the modular multilevel series converter presents large component count and poor efficiency. Thus, in this paper, a new converter solution is proposed, which is an enhanced version of the modular multilevel series converter that preserves the previously mentioned advantageous operational characteristics and that presents an improved efficiency and a considerably reduced number of components in comparison to the other three converter topologies, resulting in reduced cost, size and weight.

For timing closure of logic circuits, circuit designers must perform sign-offs on a variety of process, voltage, and temperature (PVT) conditions. Designs of advanced logic circuits involve a multitude of voltage islands and operating modes, each of which requires delay characterizations at nearby PVT corners. Furthermore, advanced technologies nodes suffer from corner explosion: while the impact of PVT variations is being exacerbated, process variations are also diversifying, increasing the number of operating conditions exponentially. This paper revisits the importance of cross-corner timing estimations and proposes a delay variation model to mitigate such corner explosion. Our objective is to reduce PVT corner characterization effort for timely static timing analysis on an exploding number of operating conditions. Our proposed Decomposed Propagation Vector Variation Model (DPVVM) decomposes propagation delay and timing constraints into the driving by the receiver cell and its driver cell; by scaling them separately, delay characterization effort is reduced to a fraction of time while realizing accurate timing estimations. We also propose Multi-Dimension Recomposition (MDR) scheme, which exploits a multitude of pre-characterized corners to further improve the consistency of cross-corner timing estimations. As a result, with only 8.0% of a corner characterization effort compared to the full-characterization, DPVVM combined with MDR achieves overall cross-corner timing estimation errors of 4.8% and 5.6% for single cells and complex logic circuits—or improvements of 69% and 61% over the conventional derating method, respectively. Our proposed method’s characterization overhead is 11% over the conventional derating method; the overhead is marginal, accounting for only 0.76% of a full-characterization time.

Optoelectronic devices have been a difficult subject to grasp for many university students who undertake electronic engineering. Many students find it difficult to understand the operation principle of the optoelectronic devices, for instance, how a solar cell device converts solar energy into electric energy or electricity, or the difference between types of semiconductor devices in terms of interaction between photons and electrons. Thus, the purpose of this paper is to design and implement an interactive and animated software package to aid students in understanding the concepts of the following optoelectronic devices: solar cell, p-n junction photodiode, p-i-n photodiode, light emitting diode and semiconductor laser. The software package was designed to be user friendly and easy to use requiring minimum learning time. The implementation of the software package was achieved using the MATLAB program which is an interactive software package for scientific and engineering numeric computation. The outcome is a series of MATLAB programs that can be used to help students learn the concepts of optoelectronic devices.

Voltage lift is a well-known technique to improve the voltage gain of the converter. A combination of switched inductor and the conventional voltage lift technique can be used to achieve high gain, but the semiconductor's stress is still high. An improved voltage lift technique by employing an extra diode and capacitor and a switched inductor is proposed, which significantly increases the voltage boosting factor and reduces the voltage stress of semiconductor devices. The proposed converter is transformerless and non-isolated in nature. The proposed topology has a continuous input source current and has a common connection between the source and the load. The converter is controlled by a single switch, making it simple to use. The steady-state relations are drawn out in both continuous conduction mode (CCM) and discontinuous conduction mode (DCM). The effect of the unequal inductance on the voltage gain is carried out in detail. The improved voltage lift technique can develop the n-stage converter to improve voltage gain further and reduce stress on semiconductors. The proposed topology is compared with the recent converters, and the effect of the non-idealities on the voltage gain and losses occurring in the components is discussed in detail. A hardware prototype with a rating of 20V/300V, 250 W is built to test the suggested topology's performance and theoretical analysis. At a 20-V input, the highest efficiency was measured to be 95.8%. 2022 The Authors. IET Power Electronics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology. This publication was made possible by NPRP grant # [13S-0108-20008] from the Qatar National Research Fund (a member of the Qatar Foundation). The statements made herein are solely the responsibility of the authors. The APC for this paper is funded by the Qatar National Library, Qatar. Scopus

It is shown that a simple metal–oxide–semiconductor (MOS) structure with highly doped silicon substrate can exhibit current–voltage hysteresis effects related to sudden rises and drops in the flowing electric current. Experimental current–voltage characteristics of Al-SiO2-(n++Si) structures are presented and discussed. Their analysis shows that the ohmic and shallow traps assisted space-charge limited conduction (SCLC) are the dominating transport mechanisms. Sudden rises and drops in the flowing current, leading to the current–voltage hysteresis effects, are attributed to tunneling through deep traps in the oxide. Based on inelastic electron tunneling spectroscopy (IETS), the energy levels of the deep traps and their position in the oxide are evaluated.

Individual forecasting of the reliability of semiconductor devices, taking into account gradual failures, is an urgent task, as it allows you to choose highly reliable instances for critical electronic devices of long-term functioning. In relation to bipolar transistors, an approach is proposed that allows us to solve this problem by using the voltage applied to the collector-emitter junction as a simulated effect. Using the example of highpower bipolar transistors of the KT872A type, it is shown how the problem is solved. For the sample of transistors of this type using the results of a training experiment, two equations were obtained to describe the electrical parameter under consideration (a static base current transfer coefficient in a circuit with a common emitter), the value of which judges the absence or presence of a gradual failure for a specific instance. The first equation shows how the electrical parameter changes on average depending on the voltage applied to the collector – emitter junction. The second equation describes the average degradation of the electrical parameter during long-term operating time of transistors. Based on these two equations, a simulation model of the reliability of bipolar transistors of the type in question is obtained in the form of a communication function that shows what level of simulation voltage corresponds to a given operating time. As applied to the transistors of the type under consideration, the obtained simulation model allows us to individually predict reliability by the gradual failures of the same type of samples that did not participate in the training experiment. To do this, first determine the value of the simulation voltage corresponding to a given operating time. This is achieved by substituting a given operating time into the model. The individual forecasting of the reliability of a new onetype instance consists in measuring the electrical parameter of this instance at a voltage on the transistor collector corresponding to the calculated simulation value, and comparing the measurement result with the norm set on the electrical parameter.

Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret). For high device scalability and low program voltage (VP), lengths of the storage regions are determined by the sum of depletion widths of N- and P-storage regions. When doping concentrations of two storage regions are equal to each other at 1018 cm-3, 2-T TRAM exhibits the longest Tret of 100 ms and the lowest impact ionization of the device can suppress various reliability issues such as hot carrier injection and junction degradation. Although Tret of 2-T TRAM can be reduced from 100 ms to 1.5 ms due to decreased read voltage with operating temperature rising from 300 K to 360 K, Tret can be further improved to >10 s by applying standby voltage (Vstandby). The effective way to set minimum Vstandby is presented using the IA-VA characteristics with 1000-s fall time. Moreover, the optimal Vstandby is set to 0.60 V by considering disturbance in array operation. Consequently, the proposed design and operation guidelines can provide a pathway to realize nanoscale 2-T TRAM for capacitor-less 4F2 1T DRAM technology.

Electro-optical frequency mapping (EOFM) technology can detect node signals from the backside of integrated circuits (ICs). In the past, the detected signal only qualitatively represented the electrical activity strength inside the device. In this paper, the electro-optical signal generation mechanism of the device is systematically studied, and a concise physical model of laser beam modulation based on the optical transmission matrix is proposed. Firstly, the influence of the bandwidth of the laser and each structure covered by the laser spot on the electro-optical signal of the device is well described by the model. Secondly, the model quantifies the electro-optical signal strength, and shows it is positively correlated with the laser wavelength and the reverse bias voltage. Finally, the model is used to quantitatively calculate the accurate voltage level of the internal node inside the device using the detected signal, and the calculation results match well with the experimental results. The model provides theoretical guidance for the efficient and accurate extraction of internal voltage values of devices by EOFM technology.

HfO2 is a high-k material that is used in semiconductor devices. Atomic-level control of material processing is required for the fabrication of thin films of high-k materials at nanoscale device sizes. Thermal atomic layer etching (ALE) of metal oxides, in which up to one monolayer of material can be removed, can be achieved by sequential self-limiting fluorination and ligand-exchange reactions at elevated temperatures. First-principles-based atomic-level simulations using density functional theory can give deep insights into the precursor chemistry and the reactions that drive the etching of metal oxides. A previous study examined the hydrogen fluoride (HF) pulse in the first step in the thermal ALE process of crystalline HfO2 and ZrO2. This study examines the HF pulse on amorphous HfO2 using first-principles simulations. The Natarajan–Elliott analysis, a thermodynamic methodology, is used to compare reaction models representing the self-limiting and spontaneous etch processes taking place during an ALE pulse. For the HF pulse on amorphous HfO2, we found that thermodynamic barriers impeding spontaneous etching are present at ALE relevant temperatures. HF adsorption calculations on the amorphous oxide surface are studied to understand the mechanistic details of the HF pulse. An HF molecule adsorbs dissociatively by forming Hf–F and O–H bonds. HF coverages ranging from 1.1 ± 0.3 to 18.0 ± 0.3 HF/nm2 are investigated, and a mixture of molecularly and dissociatively adsorbed HF molecules is present at higher coverages. A theoretical etch rate of −0.82 ± 0.02 Å/cycle for amorphous HfO2 was calculated using a maximum coverage of 9.0 ± 0.3 Hf–F/nm2. This theoretical etch rate is greater than the theoretical etch rate for crystalline HfO2 that we previously calculated at −0.61 ± 0.02 Å/cycle. Undercoordinated atoms and void regions in amorphous HfO2 allow for more binding sites during fluorination, whereas crystalline HfO2 has a limited number of adsorption sites. We acknowledge support for this work from the LAM Research and the Science Foundation Ireland–NSF China Partnership Program, NITRALD Grant No. 17/NSFC/5279. We are grateful for access to Tyndall computing facilities supported by SFI and the Irish Centre for High-End Computing, www.ichec.ie. J.J.G.M. acknowledges financial support from the FusionCAT project (No. 001-P-001722) co-financed by the European Union Regional Development Fund within the framework of the ERDF Operational Program of Catalonia 2014–2020 with a grant of 50% of total cost eligible, and the access to HPC resources at the National Supercomputing Center in Shenzhen, acquired with funding from the Postdoctoral Science Foundation of China (Grant No. 2018M643152).

Тема выпускной квалификационной работы: «Контактно-полупроводниковый выключатель нагрузки, 10 кВ, 1000 А».Данная работа посвящена исследованию Ð¿Ð¾Ð»ÑƒÐ¿Ñ€Ð¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ñ‹Ñ Ð°Ð¿Ð¿Ð°Ñ€Ð°Ñ‚Ð¾Ð² и выключателей нагрузки 10кВ, 1000А. Задачи, которые решались в Ñ Ð¾Ð´Ðµ исследования:1. Изучение Ð¾ÑÐ½Ð¾Ð²Ð½Ñ‹Ñ Ð¿Ð¾Ð½ÑÑ‚Ð¸Ð¹ о ÑÐ¸Ð»Ð¾Ð²Ñ‹Ñ Ð¿Ð¾Ð»ÑƒÐ¿Ñ€Ð¾Ð²Ð¾Ð´Ð½Ð¸ÐºÐ¾Ð²Ñ‹Ñ Ð¿Ñ€Ð¸Ð±Ð¾Ñ€Ð°Ñ , а также изучение принципа и условий работы выключателя нагрузки.2. Изучение импульсного трансформатора управления и его Ñ Ð°Ñ€Ð°ÐºÑ‚ÐµÑ€Ð¸ÑÑ‚Ð¸Ðº.3. Построение модели в среде MATLAB Simulink выключателя нагрузки и описание осциллограмм, ÑÐ²ÑÐ·Ð°Ð½Ð½Ñ‹Ñ Ñ данной моделью.В работе был смоделирован высоковольтный выключатель нагрузки и построены осциллограммы с описанием процессов на Ð½Ð¸Ñ , описан выбор типа системы привода выключателя нагрузки и применение диодной вставки в качестве дугогасящего устройства. В результате были проанализированы осциллограммы токов и напряжений., The theme of the final qualifying work: "Contact-semiconductor load switch 10 kv, 1000 A".This work is devoted to the study of semiconductor devices and load switches 10kV, 1000A. Tasks that were solved in the course of the study:1. The study of the basic concepts of power semiconductor devices, as well as the study of the principle and operating conditions of the load switch.2. Study of a pulse control transformer and its characteristics.3. Building a model in the MATLAB Simulink environment of a load switch and describing the waveforms associated with this model.In the work, a high-voltage load switch was modeled and oscillograms were constructed with a description of the processes on them, the choice of the type of load switch drive system and the use of a diode insert as an arc suppression device were described. As a result, the oscillograms of currents and voltages were analyzed.

This paper presents the results of investigations on the influence of thermal phenomena—self-heating in semiconductor devices and mutual thermal couplings between them—on the characteristics of selected electronics networks containing bipolar transistors (BJTs) or insulated gate bipolar transistors (IGBTs). Using the authors’ compact electrothermal models of the transistors mentioned above, the non-isothermal DC and dynamic characteristics of these devices and selected networks with these devices are calculated. Their selected characteristics are compared with the measurement results. The waveforms of currents in the considered networks are also determined taking into account thermal phenomena. Discrepancies between the obtained calculation and measurement results and the calculation results obtained without thermal phenomena are indicated. In particular, attention is paid to cooling conditions at which the networks under consideration may be damaged due to thermal phenomena.

Orientador: Hugo Enrique Hernandez Figueroa Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação Resumo: Este trabalho, tem como objetivo o desenvolvimento de novas técnicas, para análise de regime permanente não-autonoma de circuitos de alta-velocidade não-lineares em grande-escala. Para tal, é proposto um novo método do balanço harmônico (BH) fundamentado em uma eficiente metodologia de decomposição multi-níveis, que subdivide um circuito não-linear em grande escala em uma estrutura hierarquica de super-redes (SuRs) esparsamente interconectadas. Mais precisamente, em cada nível de hierarquia, o circuito é composto por SuRs intermediárias, SuRs de fundo, e redes de conexão (RCs). As SuRs de fundo são decompostas em um aglomerado de subredes não-lineares (SRNs) correspondendo a dispositivos semicondutores, que por sua vez, estão envolvidos por uma sub-rede linear (SRL). A equação de estado e de sonda das SuRs de fundo foram obtidas utilizando uma nova metodologia que combina a formulação de espaço de estado (FEE) para as SRNs com a formulação nodal modificada (FNM) para a SRL. Esta metodologia FEE/FNM produz um sistema quadrado de equações com menor tamanho possível. Para realização das conversões do sinal entre os domínios do tempo e da frequência, foram discutidas e implementadas diferentes transformadas de Fourier discreta (TFDs), para operação em regime multi-tons, incluindo sinais com modulação digital. A equação determinante do BH multi-níveis do circuito assume uma estrutura hierarquica do tipo bloco diagonal com borda , que pode ser eficientemente resolvida utilizando técnicas de processamento paralelo. A matriz jacobiana de cada SuR de fundo é processada utilizando eficientes técnicas de matrizes esparsas, junto com o conceito de espectro de derivada. Para a solução da equação determinante, foram utilizados os métodos de Newton e do tensor para problemas de pequena- e média-escala, e os métodos de Newton inexato e do tensor inexato para problemas em grande-escala. A globalização via pesquisa-em-linha com retrocedimento, foi adotada para nestes solucionadores não-lineares. Entretanto, para o método do tensor e do tensor inexato, também foi adotada a técnica de pesquisa-em-linha curvilinear. Nos métodos inexatos, técnicas de pré-condicionamento foram utilizadas, para aumentar a eficiência e a robustez do solucionador linear iterativo em subespaço de Krylov (GMRES, GMRES-Bt e TGMRES-Bt). Finalmente, a formulação proposta foi validada e a eficiência do método do tensor e do tensor inexato comparada com o método de Newton e de Newton inexato, para diferentes topologias de circuitos utilizando diodos, FETs e HBTs, e operando sob diferentes regimes de excitação multi-tons. Abstract: This work deals with the development of new techniques for nonautonomous nonlinear steady-state analysis of high-speed large-scale integrated circuits. To this end, it is proposed a novel harmonic balance (HB) method fundamented on a efficient multi-level decomposition methodology, that divides a large-scale circuit into hierarchical structure of sparsely interconnected supernetworks (SuNs). More precisely, the circuit is composed by intermediary SuRs, bottom SuRs and connection networks (CNs). The bottom SuNs are decomposed into a cluster of nonlinear subnetworks (NSNs) corresponding to the opto-electronic semiconductor devices, which in turn, are embedded by a linear subnetwork (LSN). Multi-port elements can be included in the LSN, in order to use measured data or results from electromagnetic analysis of structures with complex geometries. The formulation of the bottom SuN state and probe equations uses an improved table-oriented statespace formulation (SSF), that produces a square system with the lowest possible size, which is equal to the number of nonlinear state-variables (branch voltages and currents) that act as argument of the fuctions representing the semiconductor devices nonlinearities. The SSF is compared with the classical modified nodal formulation (MNF). For dealing with signal timefrequency conversions, discrete Fourier transform (DFT) techniques for different multi-tone regimes are discussed, including complex digitally modulated signals. The multi-level HB determining equation of the circuit assumes a hierarchical block bordered structure that can be efficiently tackled by parallel processing techniques. The HB jacobian matrix is handled using efficient sparse matrix techniques with a proper definition of the derivatives spectra. For the solution of a large-size HB problem, we investigated the applications of inexact tensor method based on Krylov-subspace techniques. Preconditioning are used to improve the robustness of the iterative tensor solver. To determine the circuit DC regime, we employ the tensor method. We adopted the backtracking linesearch technique as a globalisation strategy. However, for the tensor method, in particular, a curvilinear linesearch was also implemented. Finally, the formulation was validated and, the tensor and inexact tensor method efficiency was compared with the Newton and inexact Newton method, respectively, for several different circuits using diodos, FETs and HBTs, and operating under different multi-tone regimes. Doutorado Engenharia de Telecomunicações Doutor em Engenharia Elétrica

Semiconductor films that allow facile ion transport can be electronically doped via electrochemistry, where the amount of injected charge can be controlled by the potential applied. To apply electrochemical doping to the design of semiconductor devices, the injected charge has to be stabilized to avoid unintentional relaxation back to the intrinsic state. Here, we investigate methods to increase the stability of electrochemically injected charges in thin films of a wide variety of semiconductor materials, namely inorganic semiconductors (ZnO NCs, CdSe NCs, and CdSe/CdS core/shell NCs) and organic semiconductors (P3DT, PCBM, and C60). We show that by charging the semiconductors at elevated temperatures in solvents with melting points above room temperature, the charge stability at room temperature increases greatly, from seconds to days. At reduced temperature (-75 °C when using succinonitrile as electrolyte solvent) the injected charge becomes entirely stable on the time scale of our experiments (up to several days). Other high melting point solvents such as dimethyl sulfone, ethylene carbonate, and poly(ethylene glycol) (PEG) also offer increased charge stability at room temperature. Especially the use of PEG increases the room temperature charge stability by several orders of magnitude compared to using acetonitrile. We discuss how this improvement of the charge stability is related to the immobilization of electrolyte ions and impurities. While the electrolyte ions are immobilized, conductivity measurements show that electrons in the semiconductor films remain mobile. These results highlight the potential of using solidified electrolytes to stabilize injected charges, which is a promising step toward making semiconductor devices based on electrochemically doped semiconductor thin films.

For semiconductor devices of high power, the authors experimentally obtained of models of functional degradation parameter in the form of the conditional density of its distribution under the assumption of three hypotheses about the distribution law at the points of operating time: normal, two-parameter exponential and Weibull-Gnedenko. Using the average prediction error, the authors compared the effectiveness of degradation models in determining of the parametric reliability of new samples of semiconductor devices of the same type.

Capacitance–voltage ( C–V ) profiling is a useful technique for accurate and non-destructive determination of carrier concentrations in semiconductor materials. Recently, this measurement has been applied to the infrared barrier detector to determine the doping densities of the absorber and contact layers. This paper provides three contributions to the development of barrier detectors. First, we develop a physics-based semi-analytical model for computing the C–V characteristics derived from metal–oxide–semiconductor and heterojunction device physics and show that it is in agreement with results obtained from drift-diffusion simulations. Second, we assess the possibility of using the developed model to determine not only the absorber and contact doping densities, but also the doping density and thickness of the barrier layer. Lastly, we use the same drift-diffusion methodology to conduct a comprehensive parametric study of the C–V profile for a variety of absorber n-type doping densities, barrier N- and P-type doping densities, barrier thicknesses, and contact layer n-type doping densities. We also offer an extensive discussion of the role of the various device parameters on shaping the C–V profile. While this paper uses the InAsSb and AlAsSb material system, the analysis can be extended to other materials used to implement barrier devices, such as HgCdTe or superlattices.

Orientador: José Alexandre Diniz Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação Resumo: Filmes de nitreto de titânio (TiN) e nitreto de tântalo (TaN) foram depositados sobre substratos de Si (100) utilizando um sistema de sputtering reativo, com diferentes fluxos de N2 (10-80 sccm) e potência (500-1500W), em ambiente de N2/Ar. Foram analisadas as influências da mistura gasosa N2/Ar e potência nas propriedades estruturais e elétricas dos filmes de TiN e TaN, utilizando as técnicas de perfilometria, microscopia de força atômica, 4 pontas, espectroscopia Raman, difração de raios-x e espectroscopia de fotoelétron. As análises físicas e elétricas dos filmes de TiN e TaN demonstram que os filmes são policristalinos, com as orientações preferenciais (311)-( 111) e (200)-( 111), respectivamente. Os valores das taxas de deposições, resistividades elétricas e tamanho de grão para os filmes de TiN e TaN estão entre 4 e 78 nm/min, 150 e 7500 ??.cm e 0,001 e 0,027 ?m2, respectivamente. Foram fabricados capacitores MOS e diodos Schottky com eletrodos superiores de TiN e TaN com dielétricos de SiOxNy ou SiO2, e extraídas curvas CV e IV destes dispositivos, para extração de parâmetros como tensão de flatband (VFB), densidade de carga efetiva (Q0/q) e função trabalho do eletrodo superior (WF). As curvas CV dos capacitores MOS com dielétrico de SiOxNy e eletrodo superior de TiN apresentaram valores extraídos de Q0/q, VFB e WF de 1010 cm2, 0,29 V e 4,65 eV, respectivamente, que são compatíveis com a tecnologia CMOS. As curvas CV dos capacitores MOS com dielétrico de SiOxNy e eletrodo superior de TaN apresentaram valores extraídos de Q0/q, VFB e WF de 1010 cm2, 1,36 V e 3,81 eV, respectivamente, que não são compatíveis com a tecnologia CMOS. As curvas CV dos capacitores MOS com dielétrico de SiO2 e eletrodo superior de TiN apresentaram valores extraídos de Q0/q, VFB e WF de 1010 e 1012 cm2, de 0,12 V e 0,36 V, e, 4,15 eV e 4,43 eV, respectivamente, que são compatíveis com a tecnologia CMOS. As curvas CV dos capacitores MOS com dielétrico de SiO2 e eletrodo superior de TaN apresentaram valores extraídos de Q0/q, VFB e WF de 1010 e 1012 cm2, 0,29 V e 0,20 V, e, 4,41 eV e 4,44 eV, respectivamente, que são compatíveis com a tecnologia CMOS. Estes resultados indicam que os filmes de TiN e TaN são compatíveis para serem utilizados em dispositivos da tecnologia MOS Abstract: Tantalum nitride (TaN) and titanium nitride (TiN) films have been obtained by DC sputtering, using different nitrogen flow (10 - 80 sccm) and power (500 - 1500 W), in a nitrogen (N2)/argon (Ar) ambient on Si (100) substrates. The N2/Ar ratio in gas mixture and power effects on structural and electrical properties of TaN and TiN films were investigated by scan profiler (film thickness and deposition rate), atomic force microscopy (rms roughness and grain size), fourprobe technique (electrical resistivity), Raman spectroscopy, x-ray diffraction (crystal orientation) and X-ray photoelectron spectroscopy (film composition). The physical and structural analyses of TiN and TaN films show that TiN and TaN films were polycrystalline, with (311)-( 111) and (200)-( 111) preferred orientation, respectively. The deposition rates, electrical resistivities and grain size values of TiN and TaN films were between 4 and 78 nm/min, 150 and 7500 ??.cm and 0,001-0,027 ?m2, respectively. MOS capacitors and Schottky diodes were fabricated with TiN and TaN as upper electrodes and dielectrics with SiOxNy or SiO2. CV and IV measurements were carried out on these devices and flatband voltage (VFB), effective charge density (Q0/q) and metal gate work function (WF) were extracted from these measurements. The extracted values of Q0/q, VFB e WF 1010 cm2, 0,29 V e 4,65 eV, and these values were extracted from CV curves of MOS capacitors with TiN as gate electrode and SiOxNy as gate dielectric. The extracted values of Q0/q, VFB e WF 1010 cm2, 1,36 V e 3,81 eV, and these values were extracted from CV curves of MOS capacitors with TiN as gate electrode and SiOxNy as gate dielectric. The extracted values of Q0/q, VFB and WF were about 1010 and 1012 cm2, 0,12 V and 0,36V, and 4,15 eV and 4,43 eV, and these values were extracted from CV curves of MOS capacitors with TiN as gate electrode and SiO2 as gate dielectric. The extracted values of Q0/q, VFB and WF were about 1010 and 1012 cm2, 0,29 V and 0,20V, and 4,41 eV and 4,44 eV, and these values were extracted from CV curves of MOS capacitors with TaN as gate electrode and SiO2 as gate dielectric. These extracted values for VFB and WF indicates that the TiN and TaN films are suitable for MOS technology Mestrado Eletrônica, Microeletrônica e Optoeletrônica Mestre em Engenharia Elétrica

The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallization scheme into the surrounding silicon substructure. However, little is known about the response of TiW to high-temperature events or its behavior when exposed to air. Here, a combined soft and hard x-ray photoelectron spectroscopy (XPS) characterization approach is used to study the influence of post-deposition annealing and titanium concentration on the oxidation behavior of a 300 nm-thick TiW film. The combination of both XPS techniques allows for the assessment of the chemical state and elemental composition across the surface and bulk of the TiW layer. The findings show that in response to high-temperature annealing, titanium segregates out of the mixed metal system and upwardly migrates, accumulating at the TiW/air interface. Titanium shows remarkably rapid diffusion under relatively short annealing timescales, and the extent of titanium surface enrichment is increased through longer annealing periods or by increasing the bulk titanium concentration. Surface titanium enrichment enhances the extent of oxidation both at the surface and in the bulk of the alloy due to the strong gettering ability of titanium. Quantification of the soft x-ray photoelectron spectra highlights the formation of three tungsten oxidation environments, attributed to WO2, WO3, and a WO3 oxide coordinated with a titanium environment. This combinatorial characterization approach provides valuable insights into the thermal and oxidation stability of TiW alloys from two depth perspectives, aiding the development of future device technologies. C.K. acknowledges the support from the Department of Chemistry, UCL. N.K.F. acknowledges support from the Engineering and Physical Sciences Research Council (No. EP/L015277/1). J.J.G.M. and S.M. acknowledge the support from the FusionCAT project (No. 001-P-001722) co-financed by the European Union Regional Development Fund within the framework of the ERDF Operational Program of Catalonia 2014–2020 with a grant of 50% of total cost eligible, the access to computational resources at MareNostrum and the technical support provided by BSC (No. RES-QS-2020-3-0026). L.E.R. acknowledges support from an EPSRC Early Career Research Fellowship (No. EP/P033253/1) and the Thomas Young Centre under Grant No. TYC-101. A.R. acknowledges the support from the Analytical Chemistry Trust Fund for her CAMS-UK Fellowship. We acknowledge Diamond Light Source for time on Beamline I09 under Proposal No. SI19885-1. The authors would like to thank Dave McCue, I09 beamline technician, for his support of the experiments. Peer Reviewed "Article signat per 13 autors/es: C. Kalha, S. Bichelmaier, N. K. Fernando, J. V. Berens, P. K. Thakur, T.-L. Lee, J. J. Gutiérrez Moreno, S. Mohr, L. E. Ratcliff, M. Reisinger, J. Zechner, M. Nelhiebel, and A. Regoutz"

In this study, the effect of frequency and voltage on the dielectric properties of Al/(CdS-PVA)/p-Si structures prepared using cadmium sulfide (CdS)-polivinyl alcohol (PVA) interface material was investigated. For this purpose, real and imaginary permittivity (epsilon' and epsilon ''), dissipation factor (tan delta), ac electrical conduction mechanism (sigma(ac)), real and imaginary part of electric modulus (M' and M) were obtained by using capacitance-conductance (C-G/omega) measurements at frequency between 5kHz - 5MHz and at voltage between (-1V) - (+1V). All parameters were found to depend considerably on the frequency and voltage. epsilon' and epsilon '' reach higher values at low frequencies due to surface states (N-ss) which can easily monitor ac signal, dipolar polarization and interfacial polarization. Short-range mobility of charge carriers caused the increase of both electrical modulus and sigma(ac) with increasing frequency. Moreover, M '' exhibited a peak behavior which shifts to higher frequency with increasing voltage. Peak behavior could be ascribed to both decrease in polarization and surface states. (C) 2020 Elsevier B.V. All rights reserved. Duzce University BAP research ProjectsDuzce University [2017.07.02.567, 2013.07.02.204]; Gazi University Scientific Research ProjectGazi University [GU-BAP.05/2019-26] This work is supported by Duzce University BAP research Projects with 2017.07.02.567 and 2013.07.02.204 numbers and Gazi University Scientific Research Project. (Project Number: GU-BAP.05/2019-26). WOS:000598067700006 2-s2.0-85091787752

In this article, fifth order finite volume multi-resolution weighted essentially non-oscillatory (MR-WENO) scheme is developed for solving one-dimensional non linear viscous quantum hydrodynamical model for semiconductor devices with constant temperature. This non linear model consists of three equations, two equations for the current density and electron density, and third equation is the Poisson equation. The first two equations include the viscous and quantum correction terms. Further, numerical technique is used to obtain the solution due to high non linearity of considered model. The multi-resolution technique is used to reduce the computational cost of high resolution numerical scheme. In the procedure of derivation of the MR-WENO scheme unequal central spatial stencils are used and linear weights can be chosen any positive numbers with only restriction that their total sum is one. Various numerical test problems are considered to check the validity and accuracy of the derived numerical scheme. Further, the results obtained from considered numerical scheme are compared with those of kinetic flux vector splitting numerical scheme.

Made available in DSpace on 2022-04-28T19:49:26Z (GMT). No. of bitstreams: 0 Previous issue date: 2022-03-01 The use of non-ideal features of semiconductor devices is an interesting option for implementations of nonlinear electronic systems. This paper analyzes the Chua circuit with nonlinearity based on the exponential hyperbolic characteristics of semiconductor devices. The stability analysis using describing functions predicts the dynamics of this nonlinear system, which is corroborated by numerical investigations and experimental results. The dynamic behaviors and bifurcations of this nonlinear system are mapped in parameter space in order to create a base for studies, analyses, and designs. The dynamic behavior of the experimental high speed implementation of this version of Chua circuit differs from the expected dynamics for a conventional Chua circuit due to effects of unmodelled non-idealities of the real semiconductor devices, displaying that new and different dynamics for the Chua circuit can be obtained exploring different nonlinearities. Federal University of Ouro Preto UFOP/EM/DEMEC, Campus Morro do Cruzeiro Federal University of São Paulo UNIFESP/DF, Campus Diadema São Paulo State University UNESP/IGCE/DF, Campus Rio Claro São Paulo State University UNESP/IGCE/DF, Campus Rio Claro

Promising results of state-of-the-art quantum computers fuel a world-wide effort in academic and private research laboratories to scale up the number of qubits and improve their characteristics in large arrays. To meet the scale-up challenge, innovative microelectronic architectures are envisioned hosting qubits and transistors in silicon. Integrated-circuit design for deep-cryogenic temperatures (below 10 K or -263.15°C) is a challenging optimization exercise that currently leads to costly iterations due to the lack of physics-based transistor models for these temperatures. Proposed enhancements to the industry-standard transistor models neglect the low-temperature physics and do not suffice for a large-volume application. This PhD thesis pushes the state-of-the-art of the characterization, physics, and modeling of CMOS (Complementary Metal Oxide Semiconductor) transistors down to deep-cryogenic temperatures. The most advanced commercial bulk CMOS technology (28-nm minimum gate length) is measured down to 4.2 K using dip-stick measurements and probe-station measurements. The temperature behavior of the physical parameters and the analog figures-of-merit is reported. A similar characterization study is presented for a 28-nm FDSOI CMOS technology using measurements provided by CEA-Léti through the EU H2020 MOS-Quito Project. It is shown that the design methodology based on the transconductance efficiency remains valid down to 4.2 K for both advanced CMOS processes. These results are already supporting the community: qubit controllers in 28-nm bulk and FDSOI technologies have been successfully deployed in the cryostats of quantum computers by Google and CEA-Léti, respectively. Industry-standard models have been honed over many years for near room-temperature operation. They show the largest discrepancies in the sub- and near-threshold regimes when used at deep-cryogenic temperatures. Therefore, this thesis presents an in-depth study of these regimes. Generalized Boltzmann relations are derived including band tails, which are valid in subthreshold. Using these relations, a new analytical theory is derived for the subthreshold swing that rolls off from the Boltzmann limit, showing that an ideal step-like switch cannot be obtained in the 0-K limit due to shallow band-edge states. The process quality must be improved to operate devices closer to the Boltzmann limit. Moreover, the transconductance efficiency in weak inversion (subthreshold) follows the new theoretical limit instead of the Boltzmann temperature limit. This mitigates the expected current savings from biasing in weak inversion. The new theory also explains the impossible inverse temperature dependence of the subthreshold-slope factor, which has been extracted in numerous characterizations in the literature. Furthermore, a threshold-voltage model for bulk CMOS is presented including dopant freezeout and interface traps. Process engineers can benefit from this model to customize transistors for use at 4.2 K. Finally, the discrepancy of the transfer characteristics in moderate inversion (near-threshold) is modeled with an improved representation of the localized band-edge states. As such, this PhD thesis lays the groundwork for next-generation deep-cryogenic IC design benefiting from physics-based knowledge. While this thesis is oriented toward quantum computing, the results also apply to other deep-cryogenic applications at the forefront of science and engineering.

This focused issue is sponsored by the IEEE Microwave Theory and Techniques Society (MTT-S) MTT-11 Technical Committee (TC) on Low-Noise Techniques. Each TC in the MTT-S is made up of international researchers with a variety of backgrounds and research interests. The low-noise TC changes on a regular basis and brings in researchers with new interests. Low-noise techniques cover everything from fundamental noise sources down to the quantum level and up to complete systems. Of course, nonlinear processes, semiconductor devices, and oscillator noise sources are also covered, as you will see in the articles in this issue. The goal of an MTT-S TC is to promote workshops and educational publications and to maintain an everimproving knowledge base for the Society in a specific area.

Данная статья посвящена анализу результатов воздействия помех на радиоэлектронную аппаратуру и на основе этого планирования и проведения физического эксперимента. Для нормального функционирования радиоэлектронных средств (РЭС) необходимо обеспечить бесперебойную работу всех её функциональных узлов и, в частности, периферийного функционального узла (ПФУ). Представлены возможные результаты воздействия помех на ПФУ РЭС. Рассмотрены задачи анализа процессов, протекающих при воздействии помех. Предлагается метод, основанный на статистическом планировании эксперимента. В результате получается информационная матрица планов в зависимости от различных критериальных параметров. Методы планирования физического эксперимента позволяют минимизировать количество экспериментов и повысить достоверность статистических оценок., The article presents an analysis of effects of interference on radio electronic equipment and, on the basis of this, planning and conduct of a physical experiment. For the normal functioning of radio electronic means (REM), it is necessary to ensure the uninterrupted operation of all its functional units and, in particular, the peripheral functional unit (PFU). Possible results of interference impact on PFU by REM are presented. The problems of analyzing the processes occurring under the influence of noise are considered. A method based on statistical experimental design is proposed. The result is an information matrix of plans depending on various criteria parameters. Physical experiment planning methods allow minimizing the number of experiments and increasing the reliability of statistical estimates.

Hydrogenated amorphous silicon thin film transistors have been used as switching elements in liquid crystal displays and large area matrix addressed sensor arrays. Later, these devices have also been used as analogue active elements in organic light emitting diode displays. However, this technology suffers from bias induced meta-stability. This issue introduces both threshold voltage and subthreshold slope shifts over time when gate bias is applied. Such instabilities jeopardize long term performance of circuits that rely on these components. Nevertheless, hydrogenated amorphous silicon thin film transistors present an exponential transfer characteristic when operating on subthreshold region and their typical power consumption is under 1 µW. This low power characteristic makes these devices ideally suited for low power electronic design. This work demonstrates, through transient analysis of a well-established simulation model for hydrogenated amorphous silicon, the viability of thin film transistors technology to perform both analogue and digital functions. Hence, these structures may be used in both application fields. To this end, two different sets of analyses have been conducted with hydrogenated amorphous silicon based thin film transistors. The first set considers a driving circuit for an active matrix of organic light emitting diodes, biased in a way to minimize the “memory effect” (increasing shift on threshold voltage) due to long term operation. The second set of analyses were conducted upon the implementation of complementary output universal gates, namely NOR/OR and XNOR/XOR elements., i-ETC : ISEL Academic Journal of Electronics Telecommunications and Computers, Vol 6, No 1 (2020): Volume 6

The terahertz (THz) region lies between the microwave and infrared regions of the electromagnetic (EM) spectrum such that it is strongly attenuated by water and very sensitive to water content. Here, we numerically present what is to our knowledge the detecting system based on THz reflectance spectral responses data in the diagnosis of in vivo and ex vivo of some cancer's samples such as skin, breast and colon cancer tissue samples. The numerical analysis on the use of semiconductor metamaterial design/device as a complex refractive index (CRI) biosensor have been carried out. We demonstrate the application of terahertz pulse detecting (TPD) in reflection geometry for the study of normal and cancerous biological tissues. THz radiation has very low photon energy and thus it does not pose any ionization hazard for biological tissues. The sensitivity of THz radiation to polar molecules, such as water, makes TPD suitable to study the diseases in human body. By studying the THz pulse shape in the time domain, we have been able to differentiate between diseased and normal tissue for the study of basal cell carcinoma (BCC), breast and colon cancers. These results demonstrate the potential of TPD for the study of skin tissue and its related disorders, both in vivo and ex vivo. Findings of this study demonstrate the potential of TPD to depict breast and colon cancers and both in vivo and ex vivo of skin cancer and encourage further studies to determine the sensitivity and specificity of the technique., Biomedical engineering; Biophysics; Optics; photonics; Terahertz Sensing; Cancer Detection; Terahertz Pulse Detecting method; Complex Refractive Index Sensing; Finite Difference Time Domain (FDTD) method; Semiconductor devices.

Orientadores: Roberto Lacerda de Orio, Leandro Tiago Manera Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação Resumo: No presente trabalho foram projetadas três antenas opticamente reconfiguráveis para aplicações sem fio e investigados três possíveis chaves fotocondutoras baseadas em dispositivos de silício. A tecnologia de antenas reconfiguráveis é baseada na habilidade dessas antenas irradiarem em diferentes frequências ou polarização de acordo com o estado de comutação requerido. Para cada estado de reconfiguração há uma redistribuição das correntes em sua estrutura, o que modifica suas propriedades de irradiação. A tecnologia tem recebido atenção nos últimos anos, uma vez que uma única antena pode trabalhar em frequências multibanda e alterar a dinâmica de suas características de transmissão e recepção conforme a necessidade de uso. Este trabalho possui o desafio de implementar mudanças nos elementos radiantes, conforme haja mudança nos estados dos elementos de comutação. A reconfiguração das antenas é feita por chaves ópticas implementadas com dispositivos fotocondutores de silício. As chaves possuem dois estados de comutação, ligado e desligado conforme expostas ou não a luz de um laser. Foram projetados dois tipos de fotorresistores (fotoresistor horizontal e vertical) e um fotodiodo. Os estudos das chaves foram baseados em simulações numéricas. O fotorresistor vertical tem a maior variação de resistência correspondendo a 51,8 vezes entre o estado desligado e ligado na faixa de frequência de 5 GHz, sendo assim a melhor escolha como um interruptor óptico. Além disso, foi também analisado qual comprimento de onda melhor corresponderia ao projeto. Foram verificados 4 diferentes comprimentos de onda baseando-se em lasers comerciais, sendo ???? = 808 nm o melhor comprimento de onda a ser usado no projeto. O fotorresistor horizontal foi fabricado e caracterizado. Foram projetadas, simuladas e fabricadas uma antena dipolo, uma antena em forma de E e uma antena com fenda em formato de E. Simulações e testes experimentais demonstram que a antena em forma de E opera a 5,7 GHz quando a chave não está iluminada, obtendo a perda de retorno de -17 dB. A antena muda sua frequência para 2,0 GHz quando exposta a luz do laser, obtendo a perda de retorno nessa frequência de -23,9 dB. A antena com a fenda em formato de E foi projetada de forma a corresponder às exigências da banda ISM (Industrial Sientific and Medical), que define que o sistema deve operar a 2,45 GHz ou a 5,8 GHz. Com essa antena foi possível que o sistema operasse em 5,8 GHz com a perda de retorno de -15,8 dB. Quando chaveada para operar em 2,45 GHz, a perda de retorno obtida é de -16 dB. Portanto, a antena com fenda em formato de E satisfez exigências da banda ISM Abstract: In the present work, three optically reconfigurable antennas were designed for wireless applications and three possible photoconductive switches based on silicon devices were investigated. Reconfigurable antenna technology is based on the ability of these antennas to radiate at different frequencies or polarization according to the required switching state. For each state of reconfiguration there is a redistribution of the currents in its structure, which modifies its irradiation properties. The technology has received attention in recent years since a single antenna can work on multiband frequencies and change the dynamics of its transmission and reception characteristics as needed. This work has the challenge of implementing changes in the radiant elements, according there is a change in the states of the switching elements. The reconfiguration of the antennas is done by optical switches implemented with silicon photoconductive devices. The switches have two switching states, on and off depending on whether or not a laser light is exposed. Two types of photoresistors (horizontal and vertical photoresist) and one photodiode were designed. The study of Switches were based on numerical simulations. The vertical photoresistor has the greatest resistance variation corresponding to 51.8 times between the off and on state in the 5 GHz frequency band, thus being the best choice as an optical switch. In addition, it was also analyzed which wavelength would best correspond to the design. Four different wavelengths were verified based on commercial lasers, with ???? = 808 nm being the best wavelength to be used in the design. The horizontal photoresistor was manufactured and characterized. A dipole antenna, an E-shaped antenna, and an E.-slotted antenna were designed, simulated and manufactured. Simulations and experimental tests demonstrate that the E-shaped antenna operates at 5.7 GHz when the switch is not illuminated , obtaining the return loss of -17 dB. The antenna changes its frequency to 2.0 GHz when exposed to laser light, obtaining the return loss at that frequency of -23.9 dB. The antenna with the E-slot was designed to meet the requirements of the ISM band (Industrial Scientific and Medical), which defines that the system should operate at 2.45 GHz or 5.8 GHz. With this antenna it was possible for the system to operate at 5.8 GHz with the return loss of -15.8 dB. When switched to operate at 2.45 GHz, the return loss obtained is -16 dB. Therefore, the E-shaped slotted antenna met ISM band requirements Mestrado Eletrônica, Microeletrônica e Optoeletrônica Mestre em Engenharia Elétrica CNPQ 134830/2016-4

The notion of an effective longitudinal coherence length with its value much greater than λ2/(2Δλ) has been adopted in small-angle X-ray scattering communities for years, where λ and Δλ denote the incident wavelength and its spread, respectively. Often the implications of the effective longitudinal coherence length do not even enter considerations in the designing and data treatment of small-angle scattering experiments. In this work, conventional transmission small-angle X-ray scattering (tSAXS) was performed to reveal a clear angular dependence on effective longitudinal coherence length. The measured values of effective longitudinal coherence length can be as high as one millimeter, whereas the value of calculated λ2/(2Δλ) is in nanometers.

Ternary complementary metal-oxide-semiconductor technology has been spotlighted as a promising system to replace conventional binary complementary metal-oxide-semiconductor (CMOS) with supply voltage (VDD) and power scaling limitations. Recently, wafer-level integrated tunneling-based ternary CMOS (TCMOS) has been successfully reported. However, the TCMOS requires large VDD (&gt, 1 V), because a wide leakage region before on-current should be necessary to make the stable third voltage state. In this study, TCMOS consisting of ferroelectric-gate field effect transistors (FE-TCMOS) is proposed and its performance evaluated through 2-D technology computer-aided design (TCAD) simulations. As a result, it is revealed that the larger subthreshold swing and the steeper subthreshold swing are achievable by polarization switching in the ferroelectric layer, compared to conventional MOSFETs with high-k gate oxide, and thus the FE-TCMOS can have the more stable (larger static noise margin) ternary inverter operations at the lower VDD.

HfO2 and ZrO2 are two high-k materials that are important in the downscaling of semiconductor devices. Atomic-level control of material processing is required for the fabrication of thin films of these materials at nanoscale device sizes. Thermal atomic layer etching (ALE) of metal oxides, in which up to one monolayer of the material can be removed, can be achieved by sequential self-limiting (SL) fluorination and ligand-exchange reactions at elevated temperatures. However, to date, a detailed atomistic understanding of the mechanism of thermal ALE of these technologically important oxides is lacking. In this paper, we investigate the hydrogen fluoride (HF) pulse in the first step in the thermal ALE process of HfO2 and ZrO2 using first-principles simulations. We introduce Natarajan–Elliott analysis, a thermodynamic methodology, to compare reaction models representing the self-limiting (SL) and continuous spontaneous etching (SE) processes taking place during an ALE pulse. Applying this method to the first HF pulse on HfO2 and ZrO2, we found that thermodynamic barriers impeding continuous etching are present at ALE-relevant temperatures. We performed explicit HF adsorption calculations on the oxide surfaces to understand the mechanistic details of the HF pulse. A HF molecule adsorbs dissociatively on both oxides by forming metal–F and O–H bonds. HF coverages ranging from 1.0 ± 0.3 to 17.0 ± 0.3 HF/nm2 are investigated, and a mixture of molecularly and dissociatively adsorbed HF molecules is present at higher coverages. Theoretical etch rates of −0.61 ± 0.02 Å/cycle for HfO2 and −0.57 ± 0.02 Å/cycle for ZrO2 were calculated using maximum coverages of 7.0 ± 0.3 and 6.5 ± 0.3 M–F bonds/nm2, respectively (M = Hf, Zr)

I present detailed balance modeling of photonic power converters, which are photovoltaic devices designed to convert monochromatic light. The detailed balance formalism is standard in finding limiting efficiencies of photovoltaic devices. In this thesis, I discuss both existing theories and original work. I start by discussing optical processes in semiconductors. I reproduce a monochromatic detailed balance model by Martin A. Green, which has stated that monochromatic photovoltaic energy conversion is 100% efficient at infinite input intensity with input photon energy matched to the absorption bandgap. I discuss effects that are not included in this standard model and the existing theories to treat these effects: (1) non-radiative recombination loss, (2) luminescent coupling in multi-layer devices, and (3) light trapping. These background materials are followed by original work, which is divided into three chapters. In these chapters, I present extensions of Green's theory to (1) a single-layer model that includes the effect of incomplete absorption, non-radiative recombination and input photon energy offset from absorption bandgap, and (2) a multi-layer model that includes luminescent coupling and light trapping effects, in addition to the effects already included in the single-layer extension. I show material quality and efficiency improvement predicted for a record-efficiency GaAs PPC. I also predict efficiency for a InAlGaAs device under development that targets conversion at telecommunication wavelength of 1310 nm.

In this paper, we present the results of a computational analysis of continuous-wave (CW) room-temperature (RT) semipolar InGaN/GaN edge-emitting lasers (EELs) operating in the green spectral region. In our calculations, we focused on the most promising materials and design solutions for the cladding layers, in terms of enhancing optical mode confinement. The structural modifications included optimization of top gold metalization, partial replacement of p-type GaN cladding layers with ITO and introducing low refractive index lattice-matched AlInN or plasmonic GaN regions. Based on our numerical findings, we show that by employing new material modifications to green EELs operating at around 540 nm it is possible to decrease their CW RT threshold current densities from over 11 kA/cm2 to less than 7 kA/cm2.

In order to extract ever more performance from semiconductor devices on the same device area, the semiconductor industry is moving towards device structures with increasingly complex material combinations and 3D geometries. To ensure cost effective fabrication of next generation devices, metrology solutions are needed that tackle the specific challenges that come from these developments such as 3 dimensional imaging of structures and imaging of deeply buried structures under arbitrary, complex layers. Compared to existing metrology solutions for high end manufacturing, ultrasonic inspection techniques have advantages: they are unaffected by optically opaque layers, the acoustic wavelength (60nm @ 100GHz in SiO2) can be smaller than optical wavelengths and the measurement depth can be larger. However, traditional acoustic microscopy tops out at a few GHz due to manufacturing tolerances and the required liquid couplant. We propose to combine very high frequency ultrasound with scanning probe microscopy. By locating the transducer above the cantilever tip, it guides sound into the sample with a dry tip-sample contact. This allows for very high acoustic frequencies and a resolution of O(wavelength). © 2020 SPIE.

International audience; This article presents Solis, a new modular, fast, and portable one-dimensional (1D) semiconductor device simulator designed and developed particularly for photovoltaic solar cells. Solis is coded in standard C++, runs natively on Windows and Linux, and is freely available to download. All the physical models and excitation parameters can be fully controlled using the fast embedded Lua scripting engine. Solis includes a useful set of tools coded in C, such as a code editor, graphical device editor, and data plotter. A material parameters database including well-known semiconductors and their alloys is also included. The Solis calculation engine implements the drift–diffusion transport model and takes into account indirect recombination processes (with user-defined deep or shallow levels) as well as radiative and Auger recombination. The anode and cathode parameters, including the refractive index, extinction coefficient, recombination speed, and barrier height for the Schottky contact, are fully included. It natively handles spontaneous and piezoelectric polarization, which is key for the development of devices based on wurtzite materials. The values of all the material parameters can be graded arbitrarily in position, offering flexibility for the simulation of heterostructure solar cells. In addition, Solis offers functionality needed by researchers to analyze the simulation results, including graphing (of the band diagram, carrier concentration, ionized dopant and trap concentrations, current–voltage and capacitance–voltage characteristics, quantum efficiency, etc.) with complete control of the graph and a useful mathematical console. Solis simulation results for a solar cell using Earth-abundant elements are presented herein. One of the main issues in the development of such solar cells, viz. the inhomogeneity due to phase separation in the absorber, is highlighted.

Este trabalho consiste no estudo e determinação do limiar de ablação de amostras sólidas não-metálicas por pulsos laser ultracurtos, verificando a sua dependência com a duração dos pulsos e sua dispersão. Para a determinação dos limiares de ablação foi utilizada a técnica do D-Scan (Diagonal-Scan), desenvolvida pelos pesquisadores do Centro de Laser e Aplicações (CLA) do Instituto de Pesquisas Energéticas e Nucleares (IPEN-CNEN/SP), que consiste na movimentação diagonal da amostra através da cintura de um feixe gaussiano focalizado. Em cada amostra e para cada duração temporal foi determinada a dependência do limiar de ablação com a sobreposição dos pulsos, com o objetivo de determinar os parâmetros de ablação destes sólidos, que são sua fluência limiar de ablação para um único pulso e para um grande número de pulsos (infinitos), além do fator de incubação, que quantifica a formação de defeitos que modificam os valores dos limiares. Foram utilizadas amostras dielétricas de vidro borossilicato (BK7), safira (Al2O3), sílica fundida (SiO2), fluoreto de cálcio (CaF2), fluoreto de bário (BaF2), fluoreto de magnésio (MgF2), seleneto de zinco (ZnSe), e os semicondutores silício (Si) e germânio (Ge). Os materiais foram selecionados em função da energia de seus bandgaps, objetivando analisar a influência deste parâmetro na ablação por pulsos ultracurtos. Observamos que os limiares de ablação aumentam com o crescimento do bandgap dos materiais e com a duração dos pulsos, porém sem exibir dependência com a dispersão destes. Também determinamos que o acúmulo de defeitos nos materiais cresce com a duração do pulso e com a energia do bandgap, nos levando à hipótese que quanto mais fluência a ablação requer para ocorrer, maior a sobra de energia no material, que acaba sendo redistribuída para a criação de defeitos. This work deals with the study and determination of the ablation threshold of non-metallic solid samples by ultrashort laser pulses, verifying its dependence on the pulses duration and dispersion. To determine the ablation thresholds, the D-Scan (Diagonal-Scan) technique, which was developed by the researchers from the Center for Lasers and Applications (CLA) at the Institute of Energy and Nuclear Research (IPEN-CNEN/SP), was used. This technique consists in moving the sample under study diagonally across the waist of a focused Gaussian beam. For each sample and for each time duration, the ablation threshold dependence on the pulses superposition was measured in order to determine the ablation parameters of these solids, which are their ablation threshold fluency for a single pulse and for a large number of pulses (infinite), plus the incubation factor, which quantifies the formation of defects that modify the threshold values. Dielectric samples of borosilicate glass (BK7), sapphire (Al2O3), fused silica (SiO2), calcium fluoride (CaF2), barium fluoride (BaF2), magnesium fluoride (MgF2) zinc selenide (ZnSe), and silicon (Si) and germanium (Ge) semiconductors were used. The materials were selected according to their bandgap energy, aiming to analyze the influence of this parameter on the ablation by ultrashort pulses. We observed that the ablation thresholds increase with the material bandgap and with the pulse duration, but do not show a clear dependence on their dispersion. We also determined that the buildup of defects in materials increases with pulse duration and bandgap energy, leading us to the hypothesis that the more fluence the ablation requires to occur, the greater the energy surplus in the material, which eventually redistributes to the creation of defects.

In this thesis, we study the transport of charged particles in mesoscopic systems where the long-range electrostatic interaction plays a key role. In particular, we focus on the statistical properties of currents which satisfy the relation known as fluctuation theorem. A stochastic approach is presented in consistency with the laws of electricity, thermodynamics, and microreversibility. In this approach, densities of charged particles are ruled by stochastic partial differential equations and the electric field generated by the charges is determined with the Poisson equation.We start by proposing a coarse-grained model to describe the long-time behavior of particle transport in nonequilibrium systems in contact with several reservoirs. In this model, the particle exchanges between the reservoirs can be determined after a long enough time by the first and second cumulants of the probability distribution of particle transfers, thus enabling the numerical evaluation of the driving forces. It is proved that, close to equilibrium, the coarse-grained model is applicable to any system in nonequilibrium steady state. Moreover, the studies with specific examples show that the range of application of the coarse-grained model can be extended to the regime arbitrarily far from equilibrium if the detailed transition rates have linear dependence on the local particle concentration. In addition, the finite-time fluctuation theorem is established for systems with linear rates.Then, we use our stochastic approach to study charge transport in diodes and transistors. The counting statistics of the carrier current and the measured total current including the contribution of the displacement current are performed. The fluctuation theorem is shown to hold for both currents. The convergence of the finite-time affinities towards their asymptotic values over long-time scales is tested using our proposed coarse-grained model. Accurate agreement between the numerical affinities and the theoretical predictions is found when affinities take moderate values. This brings further numerical support to the fluctuation theorem for the currents in these nonlinear electronic devices. For diodes, the current-voltage characteristics is obtained, which can be well fit by Shockley curve under the extreme condition where the concentration of majority charge carriers is overwhelmingly larger than that of minority charge carriers. For transistors, the signal amplifying effect is realized under their working conditions. Moreover, the Onsager reciprocal relations and their generalizations to nonlinear transport properties deduced from the fluctuation theorem are numerically shown to be satisfied.Finally, we proceed to investigate the charge transport in a system of three tunneling junctions coupled together through a conductive island or quantum dot. The cumulant generating function is obtained by numerically solving the eigenvalue problem regarding the modified evolution operator including the counting parameters. The symmetry relation implied by the fluctuation theorem is verified, and the Onsager reciprocal relations together with their generalizations are again shown to be satisfied. Furthermore, under certain conditions, the current-voltage characteristics shows the staircase pattern due to the Coulomb blockade effect., Le transport de particules charg´ees est ´etudi´e dans les syst`emes m´esoscopiques o`u l’interaction ´electrostatique`a longue port´ee joue un rˆole central. En particulier, l’´etude porte sur les propri´et´es statistiques des courants quisatisfont la relation appel´ee th´eor`eme de fluctuations. Une approche stochastique est pr´esent´ee en accord avec leslois de l’´electricit´e, la thermodynamique et la micror´eversibilit´e. Dans cette approche, les densit´es des particlescharg´ees sont gouvern´ees par des ´equations stochastiques aux d´eriv´ees partielles et le champ ´electrique est d´etermin´epar l’´equation de Poisson. Tout d’abord, un mod`ele stochastique r´eduit est propos´e pour d´ecrire le transport departicules dans les syst`emes de non-´equilibre en contact avec plusieurs r´eservoirs. Dans ce mod`ele, les ´echanges departicules entre les r´eservoirs sont d´etermin´es aux temps longs en termes des premiers et seconds cumulants de ladistribution de probabilit´e des transferts de particules, ce qui permet l’´evaluation num´erique des forces d’entraˆınement.Il est prouv´e que, pr`es de l’´equilibre, ce mod`ele peut s’appliquer `a tout syst`eme dans un ´etat stationnaire de non-´equilibre. Par ailleurs, l’´etude d’exemples sp´ecifiques montre que le domaine d’application de ce mod`ele s’´etend `a desr´egimes arbitrairement loin de l’´equilibre si les taux de transition ont des d´ependances lin´eaires en la concentrationde particules. En plus, le th´eor`eme de fluctuations `a temps fini est ´etabli pour ces syst`emes avec des taux lin´eaires.Ensuite, l’approche stochastique est utilis´ee pour ´etudier le transport de charges dans les diodes et les transistors.La statistique de comptage est effectu´ee pour le courant des porteurs de charge et le courant total mesur´e incluantla contribution du courant de d´eplacement. Le th´eor`eme de fluctuations est d´emontr´e pour les deux courants. Laconvergence des affinit´es `a temps fini vers leur valeur asymptotique est test´ee en utilisant le mod`ele stochastiquer´eduit. Un accord est observ´e entre les affinit´es obtenues num´eriquement et les pr´edictions th´eoriques si les affinit´esprennent des valeurs mod´er´ees. Tous ces r´esultats apportent des v´erifications num´eriques du th´eor`eme de fluctuationsdes courants dans les circuits ´electroniques non-lin´eaires. Pour les diodes, la courbe caract´eristique courant-tension estobtenue et celle-ci peut ˆetre ajust´ee par la courbe de Shockley si la concentration des porteurs de charge majoritairesest beaucoup plus grande que celle des porteurs minoritaires. Pour les transistors, l’effet d’amplification du signal estmis en ´evidence dans les conditions de fonctionnement normal. De plus, il est montr´e num´eriquement que les relationsde r´eciprocit´e d’Onsager sont satisfaites, ainsi que certaines de leurs g´en´eralisations aux propri´et´es non-lin´eaires detransport d´eduites du th´eor`eme de fluctuations. Finalement, le transport de charges est ´etudi´e dans un syst`eme form´ede trois jonctions `a effet tunnel coupl´ees par un plot conducteur (quantique). La fonction g´en´eratrice des cumulantsest alors obtenue par r´esolution num´erique du probl`eme aux valeurs propres de l’op´erateur d’´evolution modifi´e pourinclure les param`etres de comptage. La relation de sym´etrie d´eduite du th´eor`eme de fluctuations est v´erifi´ee, ainsique les relations de r´eciprocit´e d’Onsager et leurs g´en´eralisations. Par ailleurs, sous certaines conditions, les courbescaract´eristiques courant-tension montrent une structure en marches d’escalier due `a l’effet de blocage coulombien., Doctorat en Sciences, info:eu-repo/semantics/nonPublished

In order to extract ever more performance from semiconductor devices on the same device area, the semiconductor industry is moving towards device structures with increasingly complex material combinations and 3D geometries. To ensure cost effective fabrication of next generation devices, metrology solutions are needed that tackle the specific challenges that come from these developments such as 3 dimensional imaging of structures and imaging of deeply buried structures under arbitrary, complex layers. Compared to existing metrology solutions for high end manufacturing, ultrasonic inspection techniques have advantages: they are unaffected by optically opaque layers, the acoustic wavelength (60nm @ 100GHz in SiO2) can be smaller than optical wavelengths and the measurement depth can be larger. However, traditional acoustic microscopy tops out at a few GHz due to manufacturing tolerances and the required liquid couplant. We propose to combine very high frequency ultrasound with scanning probe microscopy. By locating the transducer above the cantilever tip, it guides sound into the sample with a dry tip-sample contact. This allows for very high acoustic frequencies and a resolution of O(wavelength). © 2020 SPIE.

conventional snubber networks which are used to remove the stress from semiconductor devices during turning-on and turning-off are used to shape the switching locus to keep it within the Safe Operating Area (SOA) and to reduce the turn-on and turn-off switching losses in the switching devices. Usually a large snubber inductance or capacitance is found to be effective in reducing the dissipation in a resistor. It would be more efficient if, after extracting the switching energy from the semiconductor device, to feed this energy somewhere useful instead of dissipating it as a heat. By doing so, the overall efficiency of the converter would be improved. This is the aim of energy-efficient snubber circuits which is presented in this paper.

Advanced semiconductor devices offer a metrology challenge due to their small feature size, diverse composition and intricate structure. Atom probe tomography (APT) is an emerging technique that provides 3D compositional analysis at the atomic-scale; as such, it seems uniquely suited to meet these challenges. However, the semiconductor industry has demanding requirements against which the techniques in use are evaluated. This article explores the use of APT in the semiconductor industry, showing the potential of the technique, the obstacles that occur in practise, and possible future developments.

In this paper, we first point out a missing active device while providing its theoretical definition and impact on electronics. This type of active devices has an inverse functionality of transistors and is suggested to be called trancitor rather than transistor, because it directly transfers an input signal into a voltage output. It is expected that a trancitor coupled with a transistor can provide a minimal circuit configuration, i.e., low circuit complexity, helping virtually to meet Moore's law. In addition, this may also lead to a lower power consumption and higher speed of circuits compared with a transistor-only circuit. These are supported with a circuit simulation and simple Tetris-like block analysis. In this regard, in the future, it should be required to find a trancitor to be another foundation of electronics along with transistors.

This paper presents a general dimension reduction method for the dispersion modeling of current and charge sources of semiconductor devices including HEMTs, LDMOS, and HBTs. The dimensions that are easily handled are represented by the existing empirical or physical functions, while those dimensions that are difficult to tackle with or have limited measurement data are represented by the Taylor expansion. In this paper, an AlGaN/GaN HEMT was taken as the example device to illustrate how this method can be applied to handle the comprehensive dispersion effects induced by thermal and charge trapping. The dimensions of terminal voltages ( $V_{\mathit{ gs}}$ , $V_{\mathit{ ds}}$ ) are characterized by the 10-parameter Angelov function, while the remaining dispersion-related dimensions (channel temperature $T_{j}$ and drain trap state $\phi _{D}$ ) are expressed by the Taylor expansion. The constructed drain current source ( $I_{ds}$ ) model is able to predict a number of pulsed $I$ – $V\text{s}$ with various channel temperature and quiescent biases. Finally, the analytical large signal model was implemented in the advanced design system, and several $RC$ sub-circuits with multiple time constants were exploited to implement the dispersion model in the simulator. Good agreement has been achieved for both small-signal and large-signal characteristics of the investigated devices.

International Congress on Semiconductor Materials and Devices (ICSMD) -- AUG 17-19, 2017 -- Selcuk Univ, Konya, TURKEY, WOS: 000495858400001, The International Congress on Semiconductor Materials and Devices (ICSMD-2017) was held in Konya, Turkey for the first time at Selcuk University between the 17th and 19th of August, 2017. The main aim of the congress was to bring together researchers from both academic and industrial community, working in the field of semiconductor science and technology, and to promote the exchange of their ideas and results, as well as to foster collaboration between them. The scientific topic of the congress spanned a broad range of research fields on 1) Semiconductor Materials and Devices, 2) Thin Films: Surface and Interface, 3) Nanofabrication, Nanotubes, and Nanowires, 4) Photonic Devices and Sensors, 5) Organic Semiconductors and Devices, 6) Magnetic Semiconductors, 7) Biological Applications of Semiconductors, 8) Computational Methods Applied to Semiconductor Materials. There were about 200 national and international participants comprised of university students, academicians, and experts from the industry. A total of 65 oral presentations, including 8 invited speakers, were given and about 150 posters were presented. The presentations mostly gave a critical assessment of existing work and future directions in semiconductor growth and device technology, including materials characterization and device fabrication processes, growth of semiconductors, photovoltaic materials, Schottky barrier diodes and hybrid organic/inorganic semiconductor devices. This special issue of Materials Today: Proceedings features 26 peer-reviewed articles which provide a general overview of topics in the field of semiconductor materials and devices discussed in ICSMD-2017. The guest editors are thankful to all the participants, and all the authors who contributed their time and effort submitting their excellent and extended works to the present special issue. The guest editors would also like to thank all the reviewers for their valuable comments and suggestions to the authors on improving the quality of the papers. (C) 2019 Elsevier Ltd. All rights reserved., Selcuk UniversitySelcuk University; Solimpeks Solar Energy Corp; Selcuklu Municipality; Sisecam; Ligant; Konya Commodity Exchange; Konya Chamber of Industry; Yunak Municipality; Optomek; Renko, Selcuk University, Solimpeks Solar Energy Corp, Selcuklu Municipality, Sisecam, Ligant, Konya Commodity Exchange, Konya Chamber of Industry, Yunak Municipality, Optomek, Renko.