7 results on '"R.J. Molnar"'
Search Results
2. Analysis of a thermally enhanced ball grid array package
- Author
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R.C. Marrs, R.J. Molnar, and B.M. Guenin
- Subjects
Convection ,Materials science ,Thermal radiation ,Ball grid array ,Heat transfer ,Thermal ,Computer Science::Mathematical Software ,Electronic engineering ,General Engineering ,Heat transfer coefficient ,Integrated circuit packaging ,Mechanics ,Forced convection - Abstract
A thermally enhanced ball grid array package (SuperBGA package) has been developed. Its thermal performance has been analyzed using a non-linear, lumped-parameter model. This model uses a temperature-dependent heat transfer coefficient which accounts for the natural, mixed, and forced convection regimes and radiative heat transfer. The accuracy of the model was verified experimentally using one package size. The model was then used to predict the thermal performance of other package sizes and to rationalize the high level of thermal performance exhibited by the package.
- Published
- 1995
- Full Text
- View/download PDF
3. Methodology for thermal evaluation of multichip modules
- Author
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B.S. Lall, R.J. Molnar, and B.M. Guenin
- Subjects
Interconnection ,Packaging engineering ,business.industry ,Computer science ,Thermal resistance ,Electrical engineering ,General Engineering ,Hardware_PERFORMANCEANDRELIABILITY ,Dissipation ,Chip ,Circuit reliability ,Hardware_INTEGRATEDCIRCUITS ,Electronic engineering ,Junction temperature ,Integrated circuit packaging ,business - Abstract
Multichip modules provide shorter interconnection lengths between the chips, higher speeds and lower costs. This higher system performance is the driving force for advances in MCM packaging technology. A potential limitation is the ability to remove heat from these packages. With higher chip densities, the thermal management of multichip modules poses a real challenge to the package manufacturer. There is a need to define the junction-to-ambient and junction-to-case thermal resistances for multichip modules in a more rigorous manner while reducing the number of thermal tests needed to evaluate an MCM and provide information to predict junction temperatures under arbitrary powering up of the individual dice. For high reliability, it is critical that maximum specified operating junction temperatures are not exceeded. Experiments were performed for nonuniform powering up of an MCM mounted on a vertical board in natural and forced convection. The package tested was a 208-lead Amkor PMCM. The average chip temperature due to multiple sources within the module was considered as the reference temperature for evaluating the junction temperature rise of the particular chip. The concept of superposition of temperatures was found to capture the effect of the background heating of the chip due to its neighbors as well as the individual power dissipation from the chip in question. This approach offers a more refined methodology for evaluation of nonuniformly powered multichip modules compared to previous methods.
- Published
- 1995
- Full Text
- View/download PDF
4. Excitonic transitions in GaAsAlGaAs superlattices studied with lateral photoconductivity
- Author
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M. Toledo-Quinones, T. Lei, Theodore D. Moustakas, and R.J. Molnar
- Subjects
Condensed Matter::Quantum Gases ,Photocurrent ,chemistry.chemical_classification ,Condensed matter physics ,Condensed Matter::Other ,Exciton ,Superlattice ,Photoconductivity ,Binding energy ,General Chemistry ,Electronic structure ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Condensed Matter::Materials Science ,chemistry ,Materials Chemistry ,Spectroscopy ,Inorganic compound - Abstract
We studied the temperature dependence of the excitonic transitions in GaAsAlGaAs superlattices using lateral photocurrent spectroscopy. Due to the high sensitivity of the method, we determined the binding energies of the ground heavy hole and light hole excitons to be 15 ± 1 meV and 18 ± 1 meV respectively for the superlattice consisting of 300 periods of undoped GaAs (25 A thick) and Al0.3Ga0.7As (40 A thick).
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- 1991
- Full Text
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5. High-temperature GaN/SiC heterojunction bipolar transistor with high gain
- Author
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Jacques I. Pankove, S.S. Chang, Theodore D. Moustakas, H.C. Lee, R.J. Molnar, and B. Van Zeghbroeck
- Subjects
Chemical substance ,Materials science ,business.industry ,Heterostructure-emitter bipolar transistor ,Heterojunction bipolar transistor ,Optoelectronics ,business ,Science, technology and society ,Common emitter ,Early effect ,Voltage ,Leakage (electronics) - Abstract
A new high temperature heterojunction bipolar transistor (HBT) with a current gain as high as 100,000 has been fabricated. This HBT utilizes GaN for the emitter and SiC for the base and collector. The devices exhibit near ideal current-voltage characteristics, as demonstrated by their high current gain along with the absence of any observable Early effect, with the exception of high leakage currents at voltages above 10 V. High temperature operation has been demonstrated up to 260/spl deg/C with minimal degradation in output, except for an increase in leakage currents. >
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- 2002
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6. List of contributors
- Author
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R. Accomo, N. Achtziger, S.J.A. Adams, I. Akasaki, J.P. Albert, H. Amano, R. André, A. Antonelli, M. Asif Khan, R.L. Aulombard, R.F. Austin, G. Balestrino, R. Baltramiejūnas, F. Bechstedt, N. Bécourt, L. Bergman, J. Bernholc, D. Bertho, CM. Bertoni, S. Billat, M. Boćkowski, C. Bodin, C. Bodin-Deshayes, E.B. Boiko, P. Boring, A. Bouhelal, G. Bratina, K.F. Brennan, P.R. Briddon, O. Briot, I. Broser, A. Bsiesy, E. Bucher, A. Burchard, G. Cantwell, C.H. Carter, T. Castro, B.C. Cavenett, D.J. Chadi, K.M. Chen, X. Chen, H. Cheng, W.J. Choyke, N.E. Christensen, J. Cibert, R. Cingolani, T. Cloitre, P.I. Cohen, A.T. Collins, H.L. Cotal, A. Cricenti, M. Dabbicco, L.S. Dang, R.F. Davis, M. Deicher, J.M. DePuydt, B. Dischler, V.A. Dmitriev, J.F. Donegan, J.P. Doran, J.J. Dubowski, L. Eckey, J.A. Edmond, A.L. Efros, R.J. Egan, F. Engelbrecht, W. Evstropov, M. Fanciulli, R.D. Feldman, A.C. Felici, M. Ferrara, L. Ferrari, D.K. Ferry, G. Feuillet, M. Fiedler, F. Finocchi, R. Fischer, G. Fishman, A. Franciosi, Ch. Fricke, S.I. Frolov, D. Fuchs, G. Galli, S.V. Gaponenko, F. Gaspard, V.I. Gavrilenko, V. Gavryushin, W. Gebhardt, I.N. Germanenko, J. Geurts, K.P. Geyzers, B. Gil, W. Gladfelter, G. Gleitsman, E.O. Göbel, C. Godet, O. Goede, I. Gorczyca, V.P. Gribkovskii, I. Grzegory, H.-E. Gumlich, R.L. Gunshor, A.L. Gurskii, J. Gutowski, F. Gygi, M.A. Haase, C Haberstroh, W.C. Harsch, I. Hauksson, S. Hayashi, J. Hegarty, W. Heimbrodt, K. Heime, V. Heine, R. Heitz, R. Helbig, B. Henderson, F. Henneberger, R. Hérino, J. Hermans, M. Heuken, A. Hoffmann, H. Hoffmann, N. Hoffmann, H. Hofsäss, T.P. Humphreys, R.W. Hunt, S. Iarlori, S. Iida, K. Ikoma, J.P. Itie, K. Jacobs, S.G. Jahn, J.M. Jancu, C. Jaussaud, T. Jentzsch, R.L. Johnson, R. Jones, C. Jouanin, P.H. Jouneau, J. Jun, V. Jungnickel, D. Juodžbalis, S.A. Kajihara, J. Kanicki, S. Karmann, H. Katayama-Yoshida, Y. Kawakami, A. Kazlauskas, A. Kean, M.R.H. Khan, R.D. King-Smith, H. Kinto, U. Kißmann, A. Klimakow, N.I. Klyui, N. Koide, P. Koidl, H.-S. Kong, H.S. Kong, Th. König, J. Kono, V.K. Kononenko, M. Kotaki, C. Kreß, T. Krings, St. Krukowski, V. Kubertavicius, G.H. Kudlek, W. Kuhn, K. Kunc, Y. Kuroda, J.N. Kuznia, K.W. Kwak, G. Labrunie, D.B. Laks, W.R.L. Lambrecht, S. Lankes, V. Yu. Lebed, T. Lei, S. Leibenzeder, M. Lepore, T. Licht, M. Ligeon, I. Yu. Linkov, E. Litwin-Staszewska, S. Logothetidis, G. Luce, E.V. Lutsenko, M. Ch. Lux-Steiner, F. Madéore, R. Magerle, H.-E. Mahnke, K. Maier, I.E. Malinovskii, K. Manabe, M. Marinelli, B.G. Markey, A. Markwitz, T. Marshall, H. Mathieu, H. Matsunami, J.O. McCaldin, T.C. McGill, S.W.S. McKeever, J. Meier, I. Mihalcescu, E. Milani, A.I. Mitcovets, T. Mitsuyu, N. Miura, R.J. Molnar, E. Molva, M. Morohashi, Ya.V. Morozenko, T.D. Moustakas, A. Mujica, G. Mula, F. Muller, W. Müller-Sebert, A. Muñoz, A. Mura, A. Naumov, R.J. Needs, R.J. Nemanich, R. Nicolini, A.V Nurmikko, K.P. O'Donnell, T. Oguchi, K. Ohkawa, S. Okamoto, N. Okazaki, H. Okumura, M.A. Osman, J.W. Palmour, E.C. Paloura, M. Palummo, A. Paoletti, A.M. Papon, P. Paroli, M. Parrinello, G. Pensl, E. Pereira, P. Perlin, J. Petalas, W. Pfeiffer, M.C. Phillips, F.G Pikus, I. Pinter, M. Pirzer, U. Pohl, U.W. Pohl, H.M. Polatoglou, A. Polian, R. Polini, B.E. Ponga, J.L. Ponthenier, S. Porowski, J.F. Prins, K.A. Prior, J. Puls, J. Qiu, A. Qteish, G. Raciukaitis, L. Reining, T. Reisinger, M. Restle, M. Righini, P. Rodríguez-Hernández, S.J. Rolfe, R. Romestain, VD. Ryzhikov, B. Sailer, D. Sander, L. Santos, T. Sasaki, M. Sawada, G. Scamarcio, M.A. Scarselli, M. Schadt, A. Schneider, J. Schneider, A. Schöner, A. Schülzgen, S. Selci, M. Shinohara, J. Simpson, L. Sorba, B. Spellmeyer, R.P. Stanley, H. Stanzl, R.A. Stein, H. Stewart, I. Suemune, G. Sulzer, T. Suski, W. Suttrop, J.F. Swenberg, M.R. Taghizadeh, S. Takeyama, T.L. Tansley, A. Tebano, P. Thurian, E. Tosatti, C. Trager-Cowan, N. Troullier, I. Tschentscher, N. Tsuboi, A. Tsujimura, K. Tsukioka, P.A. Tupenevich, K.F. Turner, H. Uchiki, M. Uhrmacher, B. Ullrich, D. Uttamchandani, C.G. Van de Walle, J. van der Weide, J.M. Van Hove, D. Vanderbilt, L. Vanzetti, D. Vasileska, J.C. Vial, H.P. Wagner, U. Wahl, H. Waldmann, CT. Walker, E.G. Wang, M.W. Wang, S.Y. Wang, Y. Wang, V. Weinhold, T. Wiehert, C. Wild, W. Witthuhn, H. Wolf, K. Wolf, M. Wörz, G.P. Yablonskii, M. Yagi, S. Yamaga, M. Yamanaka, F. Yang, S. Yoshii, A. Yoshikawa, X. Yu, W. Zeitz, and L.G. Zimin
- Published
- 1993
- Full Text
- View/download PDF
7. Growth of GaN by ECR-assisted MBE
- Author
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T.D. Moustakas, T. Lei, and R.J. Molnar
- Published
- 1993
- Full Text
- View/download PDF
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