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Tubulointerstitial diseases is one of the common causes of renal dysfunction. Some rare pathological types are easy to be misdiagnosed and missedly diagnosed because of their low prevalence and relatively insufficient understanding, which affects the treatment and prognosis of patients. This study aims to explore clinical manifestations and pathological characteristics of several rare tubulointerstitial diseases, and therefore to improve their diagnosis and treatment.A total of 9 363 patients diagnosed by renal biopsy in the Department of Nephrology, Second Xiangya Hospital, Central South University from November 2011 to September 2021 were selected. Six cases of light chain cast nephropathy (LCCN), 2 cases of light chain proximal tubulopathy (LCPT), 1 case of LCCN with LCPT, 4 cases of genetic tubulointerstitial disease, and 6 cases of non-genetic related tubulointerstitial lesion were screened out, and their clinical manifestations and renal biopsy pathological results were collected, compared, and analyzed.Patients with LCCN presented with mild to moderate anemia, microscopic hematuria, and mild to moderate proteinuria. Compared with patients with LCPT, proteinuria and anemia were more prominent in patients with LCCN. Five patients with LCCN and 2 patients with LCPT had elevated serum free kappa light chain. Five patients with LCCN presented clinically with acute kidney injury (AKI). Two patients with LCPT and 1 patient with LCCN and LCPT showed CKD combined with AKI, and 1 LCPT patient presented with typical Fanconi syndrome (FS). Five patients with LCCN, 2 patients with LCPT, and 1 patient with LCCN and LCPT were diagnosed with multiple myeloma. Five patients with LCCN had kappa light chain restriction in tubules on immunofluorescence and a "fractured" protein casts with pale periodic acid-Schiff (PAS) staining on light microscopy. Immunohistochemical staining of 2 LCPT patients showed strongly positive kappa light chain staining in the proximal tubular epithelial cells. And monoclonal light chain crystals in crystalline LCPT and abnormal lysosomes and different morphological inclusion bodies in noncrystalline LCPT were observed under the electron microscope. Six patients with LCCN were mainly treated by chemotherapy. Renal function was deteriorated in 1 patient, was stable in 4 patients, and was improved in 1 patient. Two patients with LCPT improved their renal function after chemotherapy. Four patients with genetic tubulointerstitial disease were clinically presented as CKD, mostly mild proteinuria, with or without microscopic hematuria, and also presented with hyperuricemia, urine glucose under normal blood glucose, anemia, polycystic kidneys. Only 1 case had a clear family history, and the diagnosis was mainly based on renal pathological characteristics and genetic testing. Compared with patients with non-genetic related tubulointerstitial lesion, patients with genetic tubulointerstitial disease had an earlier age of onset, higher blood uric acid, lower Hb and estiated glomemlar fitration (eGFR), and less edema and hypertension. Renal pathology of genetic tubulointerstitial disease presented tubular atrophy and interstitial fibrosis, abnormal tubular dilation, glomerular capsuledilation, and glomerular capillary loop shrinkage. Glomerular dysplasia and varying degrees of glomerular sclerosis were observed. Genetic tubulointerstitial disease patients were mainly treated with enteral dialysis, hypouricemic and hypoglycemic treatment. Two genetic tubulointerstitial disease patients had significantly deteriorated renal function, and 2 patients had stable renal function.Patients with AKI or FS, who present serum immunofixation electrophoresis and/or serum free kappa light chain abnormalities, should be alert to LCCN or LCPT. Renal biopsy is a critical detection for diagnosis of LCCN and LCPT. Chemotherapy and stem cell transplantation could delay progression of renal function in patients with LCCN and LCPT. If the non-atrophic area of the renal interstitium presents glomerular capsule dilatation, glomerular capillary loop shrinkage, and abnormal tubular dilatation under the light microscopy, genetic tubulointerstitial disease might be considered, which should be traced to family history and can be diagnosed by genetic testing.

From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR), their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up the information era over the past decades. However, the growing demand for big-data storage and processing is limited by the von-Neumann architecture due to the memory bottleneck and power dissipation. Taking advantage of nonvolatility, high speed, and low power, magnetic random access memory (MRAM) becomes a promising candidate to overcome this limitation through processing-in-memory (PIM) architectures. In this article, we provide an overview of existing technology and give a roadmap of spintronic devices for future energy-efficient computing and its relevant integration architectures. We begin with the fundamentals of Toggle-MRAM and spin-transfer torque (STT)-MRAM, which already have commercial applications. We then introduce spin-orbit torque (SOT), a critical mechanism to realize low-power data manipulation in the next generation of MRAM and summarize the recent experimental breakthroughs of field-free SOT switching schemes. Finally, we present MRAM-based PIM architectures and novel spintronic devices, provide an application outlook, and deliver the future development potential of energy-efficient computing systems.

The interplay of spin-transfer torque (STT) and spin-orbit torque (SOT) highlights the potential of current-induced magnetization reversal for the ultrahigh-speed and ultralow-power memory applications. However, the ultrafast field-free switching and its dynamic mechanism have not been clarified yet. Here, we experimentally demonstrate the sub-nanosecond field-free switching by the interplay of STT and SOT in perpendicular magnetic tunnel junctions (MTJs). The dynamic investigations of the STT and SOT switching reveal that the applied SOT current can highly decrease the incubation time and current density of STT, which leads to the achievement of ultra-fast switching. Besides, the timing scheme investigations of SOT and STT pulses are performed. The firstly applied SOT current further decreases the transition time of the magnetization switching, which could result from the different nucleation and motions of domains. The interplay and the timing operations of STT and SOT provide more flexible solutions for high-speed, large-scalability and energy efficient memory applications.

The pathological types of renal diseases have changed in the past decade, but it lacks large sample analysis in Hunan Province. This study aims to retrospectively analyze the composition characteristics of pathological spectrum of kidney disease in Hunan Province in recent 10 years, compare the changes of pathological types of kidney disease.We collected a total of 9 310 kidney biopsy cases from 2011 to 2020 registered in the kidney biopsy system of the Nephrology Institute of the Second Xiangya Hospital of Central South University. Patients were assigned into a 14-24 years old group, a 25-44 years old group, a 45-59 years old group, and a ≥60 years old group, and divided into 2 time periods, namely 2011-2015 and 2016-2020. Pathological types of renal disease were divided into primary glomerulonephritis (PGN), secondary glomerulonephritis (SGN), tubulo-interstitial nephritis (TIN), hereditary kidney disease, and other pathological types.PGN accounted for 66.93% cases. Among PGN, IgA nephropathy (IgAN) (42.83%), membranous nephropathy (MN) (19.16%), minimal change glomerulopathy (12.46%), and focal segmental glomerulosclerosis (FSGS) (14.97%) were the 4 most common pathological types. Compared with the group in the period of 2011-2015, IgAN (46.74% vs 37.33%) and MN (21.26% vs 16.18%) were increased significantly in years 2016-2020 (bothIgAN remains the primary pathological type of kidney disease in China in the recent years. The patients with the age of 25-44 years old have the largest proportion of IgAN. With increases in age, the proportion of IgAN gradually decreases. MN increases to different degrees at various ages, while cases of HT, DN, and monoclonal immunoglobulin-related renal damage have increased. This single-center renal pathology spectrum can provide clinical evidence for diagnosis, prevention and epidemiological study.

Negative thermal expansion (NTE) behavior with giant thermal hysteresis exceeding 450 K has been observed in Fe3NiBx. This behavior is desirable in the field of pipe joint or encapsulation. The temperature dependent X-ray diffraction and magnetization indicate that NTE behavior with giant thermal hysteresis is related to crystal structure transition between face-centered cubic (fcc) and body-centered cubic (bcc), but not to the magnetic transition. The introduction of boron can reduce the NTE temperature range and stabilize the high temperature fcc phase. Therefore, we can obtain the NTE behavior below room temperature during cooling process, which is important for the practical application.

Antiferromagnetic insulators have recently been proved to support spin current efficiently. Here, we report the damping-like spin- orbit torque (SOT) in Pt / NiO / CoFeB has a strong temperature dependence and reverses the sign below certain temperatures, which is different from the slight variation with temperature in the Pt / CoFeB bilayer. The negative damping-like SOT at low temperatures is proposed to be mediated by the magnetic interactions that tie with the “exchange bias” in Pt / NiO / CoFeB, in contrast to the thermal-magnon-mediated scenario at high temperatures. Our results highlight the promise to control the SOT through tuning the magnetic structure in multilayers.

Perpendicular magnetic tunnel junctions with double-interface free layer (p-DMTJs), which exhibit enhanced tunnel magnetoresistance (TMR) and thermal stability (Δ) at the nanoscale, have received considerable interest as building blocks for spintronic data storage devices. Heat-assisted magnetic recording (HAMR) techniques have been widely employed in mainstream magnetic storage to enable ultrahigh storage density. However, the data access is achieved by sensing the stray field of the selected magnetic element using a mechanical “read head”, resulting in an unfavorable speed limitation and design complexity. To address this issue, integrating laser-assisted switching with a high-performance magnetic tunnel junction has received interest in spintronic R&D; however, it has not yet been achieved. In this study, we experimentally explored femtosecond (fs) laser-assisted switching in a p-DMTJ device using a direct electrical TMR readout. We demonstrate two reconfigurable switching operations, i.e., binary “write” and unidirectional “reset”, by the interplay of the fs laser and synchronized magnetic field sequence. We further explored the joint effect, and a switching phase diagram was obtained. The effect of the stray field of p-DMTJ, as well as laser helicity, on switching is also discussed. Results show the feasibility of fs laser-assisted writing p-DMTJs, which can pave the way in high-density optospintronic storage applications.

Antiperovskite compounds with abundant magnetic phase transitions provide an ideal platform for exploring nontrivial magnetotransport responses. In this study, the anomalous Hall effect (AHE) in an antiperovskite (110)-oriented Mn3.19Ga0.81N1−δ film up to room temperature was observed, and an unusual sign reversal was detected in the Hall measurements. The AHE reversal suggests that the carrier reversal corresponds to a magnetic transition from a ferrimagnetic order to noncollinear antiferromagnetic order at about 240 K. Analysis of the scaling relation of AHE indicates that the sign reversal originates from the transition from the skew scattering dominated AHE to the intrinsic mechanism dominated AHE. These findings will inspire effective control of the magnetic configuration and innovative applications for manipulating carrier transport in spintronic memory devices based on antiperovskite films.

The negative thermal expansion (NTE) or nearly zero thermal expansion (NZTE) behaviors have been found in some magnetic metallic compounds with great application prospects. However, it is a big challenge for applications that the responding temperature range is not broad enough or far away from room temperature. Herein, a new method is put forward to design the wide temperature range of NTE and NZTE Behavior by NTE/NZTE multi-phase composite. In this method, the optimized volume fraction of the components achieves a concordant collaboration of multi-phase in the counteraction of NTE and positive thermal expansion (PTE) at several adjacent temperature ranges and thus the temperature range is broadened as expected. By this method, MnCuGeN-based NTE composite (290 K ≤ T ≤ 385 K, ΔT = 95 K) and MnCuZnSiGeN-based NZTE composite (200 K ≤ T ≤ 400 K, ΔT = 200 K) with excellent stability have been successfully designed and prepared. This idea will open an avenue to the multi-phase composite with designable NTE/NZTE properties, which would have important applications in aerospace and other modern industries.

Cross-Border eCommerce (CBeC) is now one of the most dynamic and important phenomena in international business, and the cultivation of talents in this area has become a pressing issue. This paper discusses our experiments in which a Virtual Community of Practice (VCoP) with multi-media, multi-layered WeChat groups was established. Results show that this VCoP has been proved both suitable and effective: it solved the problem of multi-location of participants in this programme by setting up a convenient and almost free-of-charge VCoP; the structure of 3-layered WeChat groups has been both efficient and effective, with students concentrating on the specific product and function in which they specialize; and the use of multi-media functions available on the WeChat platform for lecture delivery and discussion has improved the teaching effects and motivated students in learning and practice.

Spin orbit torque (SOT) has drawn widespread attention in the emerging field of magnetic memory devices, such as magnetic random access memory (MRAM). To promote the performance of SOT-MRAM, most efforts have been devoted to enhance the SOT switching efficiency by improving the damping-like torque. Recently, some studies noted that the field-like torque also plays a crucial role in the nanosecond-timescale SOT dynamics. However, there is not yet an effective way to tune its relative amplitude. Here, we experimentally modulate the field-like SOT in W/CoFeB/MgO trilayers through tuning the interfacial spin accumulation. By performing spin Hall magnetoresistance measurement, we find that the CoFeB with enhanced spin dephasing, either generated from larger layer thickness or from proper annealing, can distinctly boost the spin absorption and enhance the interfacial spin mixing conductance Gr. While the damping-like torque efficiency increases with Gr, the field-like torque efficiency is found to decrease with it. The results suggest that the interfacial spin accumulation, which largely contributes to the field-like torque, is reduced by higher interfacial spin transparency. Our work shows a new path to further improve the performance of SOT-based ultrafast magnetic devices.

The influences of Fe substitutions on magnetic properties, phase transformations and magnetocaloric effects of Mn3Cu1-xFexN have been investigated. The magnetic phase transition temperature (Tc) increases but the first-order phase transition temperature decreases with increasing the Fe content. Fe doping separates the first-order phase transition into first-order and second-order phase transitions in Mn3Cu1-xFexN. The second-order (paramagnetic-ferromagnetic) transition coexists with first-order (ferromagnetic-ferrimagnetic) transition in Mn3Cu0.95Fe0.05N. Introduction of the second-order magnetic transition broadens the phase transition span, which greatly enhances the relative cooling power of Mn3CuN. The results indicate that resolving complex magnetic phase transition may improve the cooling capacity of antiperovskite compounds.

Effects of Ni substitution on magnetic and thermal expansion properties in Mn 3 Ga 1−x Ni x N (0 ≤ x ≤ 1.0) were investigated. The magnetic structure for Mn 3 GaN is a typical noncollinear antiferromagnetic Γ 5 g . After Ni was introduced to the Ga site, the spin alignment was changed from antiferromagnetic to ferromagnetic. In addition, the magnetic transition temperature first decreased and then increased with increasing Ni content, which could be ascribed to the competition between the electron-type doping effect and the lattice effect. Near the magnetic transition, Mn 3 Ga 1−x Ni x N showed an abrupt lattice contraction with increasing temperature and the magnitude of the lattice contraction gradually decreased from 0.38% (for x = 0) to 0.09% (for x = 1.0) with increasing Ni substitution. In particular, zero thermal expansion behavior below 150 K was observed in Mn 3 Ga .6 Ni .4 N, and thermal expansion coefficient α was estimated to be 0.311 × 10 −6 K −1 . The obtained zero thermal expansion is very useful for practical applications in precision devices. The zero thermal expansion behavior was assumed to be associated with the ferromagnetic characteristic induced by the Ni substitution, which stabilized the Γ 5 g antiferromagnetic structure.

The antiperovskite Mn 3 Zn 0.77 Mn 0.19 N 0.94 was investigated by in situ neutron powder diffraction (NPD) in the temperature region 5–300 K. Here, a noncollinear-antiferromagnetic/collinear-ferrimagnetic phase separation (PS) showing different lattice parameters was firstly revealed in antiperovskites. The NPD results prove that the noncollinear antiferromagnetic phase, even coexisting with the collinear ferrimagnetic phase, could be responsible for the zero thermal expansion behavior of Mn 3 Zn 0.77 Mn 0.19 N 0.94 below 110 K. These findings suggest that Mn 3 ZnN based materials could open a new avenue for further exploring the noncollinear magnetic PS and correlated physical properties of antiperovskites.

The negative thermal expansion (NTE) and structural evolution of antiperovskite compounds Mn3Ga1−xGexN (0 ≤ x ≤ 1.0) were systematically investigated. Our results indicate the crystal structure of Mn3Ga1−xGexN changes from cubic (C) to tetragonal (T4) with increasing Ge content by X-ray diffraction (XRD).The negative thermal expansion from x = 0 (operation-temperature range ▵T = 20 K) to x = 0.4 (▵T = 60 K) becomes broad and shifts to higher temperature, and then it became positive from x = 0.5 in Mn3Ga1−xGexN. Typically, Mn3Ga0.5Ge0.5N shows low thermal expansion behavior between 300 and 450 K (∆T = 150 K), and thermal expansion coefficient α is estimated to be 2 × 10−6 K−1. Furthermore, variable temperature XRD was measured to reveal the origin of NTE. The cubic I - cubic II phases coexistence (x = 0.2) and cubic I - tetragonal coexistence (x = 0.5, 0.6) was observed at low temperature. The tunable NTE is highly valuable for practical applications in precision devices.

The Mn3CuN/n-Si heterojunction device is first designed in the antiperovskite compound, and excellent rectifying characteristics are obtained. The rectification ratio (RR) reaches as large as 38.9 at 10 V, and the open-circuit voltage Voc of 1.13 V is observed under temperature of 410 K. The rectifying behaviors can be well described by the Shockley equation, indicating the existence of a Schottky diode. Simultaneously, a particular semiconductor–metal transition (SMT) behavior at 250 K is also observed in the Mn3CuN/n-Si heterojunction. The interfacial band bending induced inversion layer, which is clarified by the interfacial schematic band diagrams, is believed to be responsible for the SMT and rectifying effects. This study can develop a new class of materials for heterojunction, rectifying devices, and SMT behaviors.

Spintronics devices has attracted considerable interest and attention, especially for the magnetic random-access memories (MRAMs), which have high reliability, low power consumption and fast operation speed. Remarkable progress in innovative materials and new circuits structures in spintronics have been witnessed. This paper reviews our researches of ultra-low power consumption spintronics devices reported in recent years. Both the highly efficient spin transfer torque (STT) MRAM and the filed-free spin orbit torque (SOT) MRAM are discussed. Based on these spintronics devices, the NAND-like spintronics memory (NAND-SPIN) structure and in-memory processing method give the potential solutions for next generation integrated circuits.

Owing to improved thermal stability and scalability, materials with perpendicular magnetic anisotropy (PMA) are extremely attractive. The all perpendicular magnetic tunnel junction ([Formula: see text]-MTJ) devices are primarily devoted to spin transfer torque (STT)-induced switching and few works report their microwave emission. Here, we demonstrate the basic results of RF function in nanoscale [Formula: see text]-MTJ which has two different thickness free layers separated by atom-thick tungsten insertion. The ultrathin W spacer layer not only enables the two CoFeB free layers precess as a single layer but also greatly enhances the PMA which further induces high-emission frequency. The all perpendicular spin transfer torque nano-oscillator (STNO) exhibited high frequency (7.6[Formula: see text]GHz) and large current modulation capability of [Formula: see text] at moderate external magnetic field. Along with our previous work on STT switching utilizing the similar stack, such a multifunctional structure could bring low cost solutions to Internet of Things (IoT) network applications.

Giant zero-field cooling exchange-bias-like behavior with ${H}_{\mathrm{EB}}=3.49\phantom{\rule{0.16em}{0ex}}\mathrm{kOe}$ was found in an antiperovskite $\mathrm{M}{\mathrm{n}}_{3}\mathrm{C}{\mathrm{o}}_{0.61}\mathrm{M}{\mathrm{n}}_{0.39}\mathrm{N}$ compound. The magnetic structure of $\mathrm{M}{\mathrm{n}}_{3}\mathrm{C}{\mathrm{o}}_{0.61}\mathrm{M}{\mathrm{n}}_{0.39}\mathrm{N}$ was resolved to be ferrimagentic ordering composed of canted ${\mathrm{\ensuremath{\Gamma}}}^{5\mathrm{g}}$ antiferromagnetic (AFM) and ferromagnetic (FM) along the [111] direction by the neutron diffraction technique. The exchange coupling model was proposed together with the first principles calculation for further understanding this exchange-bias-like behavior. It was found that the ferromagnetic exchange interaction between FM and the canted ${\mathrm{\ensuremath{\Gamma}}}^{5\mathrm{g}}$ AFM play an important role in the particular exchange-bias-like behavior. The exchange coupling constructed in the lattice is distinct from the interactions between collinear AFM and FM in conventional exchange bias system. In addition to the enhanced horizontal shift, hysteresis loops obtained after FC cooling also exhibited vertical shift. The macroscopic vertical shift of the magnetization is ascribed to the increase of the magnetic moment of canted ${\mathrm{\ensuremath{\Gamma}}}^{5\mathrm{g}}$ spins along the external magnetic field. This finding will promote the development of advanced magnetic devices.

The fully dense, low-reacted Mn3Zn0.7Ge0.3N/Al composites were successfully fabricated by pressure infiltration technology. The large positive thermal expansion of Al is effectively suppressed by adding Mn3Zn0.7Ge0.3N component. Nearly zero thermal expansion (α=-0.41×10-6K-1) is achieved between 35 and 70°C in the composite with 30vol.% Mn3Zn0.7Ge0.3N. Moreover, the bending stress and modulus of Mn3Zn0.7Ge0.3N/Al composites increase gradually with increasing Mn3Zn0.7Ge0.3N content. This low thermal expansion, good mechanical properties materials is beneficial to electronic packaging and precision field.

The thermodynamic properties and negative thermal expansion (NTE) behavior of metal-organic framework MOF-5 are investigated within the quasi-harmonic approximation, by using density functional theory. For nanoporous MOF-5, the temperature dependence of bulk modulus increases with increasing temperature, indicating that the resistance to compression is enhanced gradually. The large NTE behavior is obtained, which agrees reasonably with the experimental data. From the Gruneisen parameter as a function of temperature, it can be found that low-frequency phonons are closely associated with the NTE of MOF-5. The corresponding vibrational modes can be viewed as the results of local deformations (translation, rotation, twisting) of BDC (1,4-benzenedicarboxylate) linker and zinc clusters. The lowest-frequency phonon mode (the transverse motion of carboxylate groups and benzene ring, zinc clusters being as rigid units) is confirmed to be most responsible for thermal contraction.

Antiperovskite intermetallic Mn3−xCrxZnN (0≤x≤0.5) compounds have been prepared to study the Cr doping effect on the electronic transport properties. The temperature dependent resistivity ρ(T) for x≤0.3 shows notable and broader slope change. Meanwhile, with increasing Cr doping, the slope change shifts to lower temperatures and is gradually suppressed for x>0.3. For x=0.0 and 0.5, the measurements of magnetization from 10 K to 350 K reveal that Mn3−xCrxZnN compounds go through a transition from the dominant AFM interactions to one where the FM and AFM interactions coexist. For low-temperature region (15–80 K), the electron–electron scattering is dominant, and the number of phonons abruptly increases with increasing temperature. Small polaron hopping model (SPH) is used to understand the temperature dependence of electrical resistivity in the high-temperature range of 200–300 K and a clear decrease of the polaron activation energy was observed for x≤0.2. The residual resistivity ratio (RRR) decreases while the residual resistivity increases (ρ0) with increasing Cr-doping level. The maximum total entropy change (ΔSmax) decreases by increasing the Cr doping from x=0.0 to 0.2.

The Cr doping effect on the lattice and magnetic properties in Mn3−xCrxZnN was reported in the antiferromagnetic intermetallic host material Mn3ZnN. The lattice parameter decreases with the increase of the Cr concentration. Measurements of magnetization from 10 K to 350 K reveal that sharp antiferromagnetic (AFM)-to-paramagnetic (PM) transitions of the host material exist at 185 K (ZFC) and 177 K (FC). The peak is broadened clearly as the Cr doping was increased and when the Cr concentration exceeded 0.3, a significant ferromagnetic (FM) character was found to coexist with an AFM phase. At x=0.4 and 0.5, the M–H curves exhibit small magnetic hysteresis loop, indicating the dominant FM interactions in these samples. Also, a positive value of Weiss Temperature (ΘW) at x=0.5 in H/M–T plot suggests that the FM interaction is dominant when the Cr doping increases.

The antiperovskite compounds Mn 3 Ag x Mn y N with Ag vacancies and Mn doping at Ag site were synthesized and investigated. The introduction of Ag vacancies has a very small influence on magnetic transitions. However, the magnetic transitions at T N (Neel temperature) and T t (transition at lower temperature) gradually overlap with Mn doping accompanied by broadening of negative thermal expansion behavior. We also observed the nearly zero temperature coefficient of resistivity (NZ-TCR) behavior above magnetic order–disorder transition. The tunable TCR values from positive to negative could be achieved in Mn 3 Ag x Mn y N by reducing the contribution of (electron–phonon) e–p scattering in resistivity. Our results reveal the significance of e–p scattering for the evolution of TCR values, which could enrich the understanding of NZ-TCR behavior in antiperovskite manganese nitrides.

The magnetovolume effects (MVEs) of $\mathrm{M}{\mathrm{n}}_{3}\mathrm{G}{\mathrm{a}}_{1\ensuremath{-}x}\mathrm{S}{\mathrm{n}}_{x}\mathrm{N}$ antiperovskite compounds have been investigated by means of neutron powder diffraction. Increasing the Sn-doping content at the Ga site leads to the broadening of the magnetic phase transition temperature range and the thermal expansion behavior changes from negative to positive. We establish the relationship between the square of the ordered magnetic moment ${m}^{2}$ and the volume variation $\mathrm{\ensuremath{\Delta}}{\ensuremath{\omega}}_{m}$ for the antiferromagnetic phase (${\mathrm{\ensuremath{\Gamma}}}^{5g}$ magnetic structure with rhombohedral symmetry $R\overline{3}m$). The temperature variations of $\mathrm{\ensuremath{\Delta}}{\ensuremath{\omega}}_{m}(T), {m}^{2}(T)$ and the magnetoelastic coupling constant $C(T)$ are also quantitatively analyzed according to the itinerant-electron theory. Moreover, the increase of the phonon contribution to the thermal expansion induced by Sn doping and the corresponding decrease of dm/dT are revealed to be the key parameters for tuning the MVEs. Our results allow elucidating and quantifying the mechanism of the spin-lattice coupling and can be used to design magnetic functional materials with controlled thermal expansion behaviors for specific applications.

Fe-doped MnNiGe alloys were successfully synthesized by solid-state reaction. Giant negative thermal expansion (NTE) behaviors with the coefficients of thermal expansion (CTE) of −285.23 × 10−6 K−1 (192–305 K) and −1167.09 × 10−6 K−1 (246–305 K) have been obtained in Mn0.90Fe0.10NiGe and MnNi0.90Fe0.10Ge, respectively. Furthermore, these materials were combined with Cu in order to control the NTE properties. The results indicate that the absolute value of CTE gradually decreases with increasing Cu contents. In Mn0.92Fe0.08NiGe/x%Cu, the CTE gradually changes from −64.92 × 10−6 K−1 (125–274 K) to −4.73 × 10−6 K−1 (173–229 K) with increasing value of x from 15 to 70. The magnetic measurements reveal that the NTE behaviors in this work are strongly correlated with the process of the magnetic phase transition and the introduction of Fe atoms could also change the spiral anti-ferromagnetic (s-AFM) state into ferromagnetic (FM) state at low temperature. Our study launches a new candidate for controlling thermal expansion properties of metal matrix materials which could have potential application in variable temperature environment.

One of the specific subjects in frustrated magnetic systems is the phenomenon coupled with noncollinear magnetism, such as zero or negative thermal expansion (ZTE or NTE) in antiperovskite compounds. The first-principles calculations and neutron powder diffraction (NPD) are used to reveal the control of the noncollinear Γ5g antiferromagnetic (AFM) structure and corresponding thermal expansion properties in Mn3Zn0.875X0.125N (X = Mn, Ge, and Sn). Based on the optimal exchange-correlation functional, our results demonstrate that X (X = Mn, Ge, and Sn) doping at Zn site could stabilize the noncollinear Γ5g AFM structure and produce magnetovolume effect (MVE). The predictions of Γ5g AFM ground state and MVE is further verified by the NPD results of Mn3Zn0.83Mn0.15N0.99. Intriguingly, this special magnetic structure with strong spin–lattice coupling can be tunable to achieve ZTE behavior. On the basis of these results we suggest that frustrated magnetic systems with noncollinear Γ5g AFM structure of Mn atoms i...

We present the first-principles investigation of Sc1−xTixF3 (x ≤ 0.375). Controllable thermal expansion of Sc1−xTixF3 is achieved by different Ti contents. The negative thermal expansion (NTE) behavior is weakened gradually with increasing Ti content, which is consistent with experimental measurements. The Jahn–Teller effect plays an important role in the cubic-to-rhombohedral phase transition, which stems from the enhanced energy stability when the 3d orbitals of Ti3+ cation split into triply degenerate t2g and eg sets. The unusual thermal stiffening of Sc1−xTixF3 is found, which is similar to that of Sc1−xYxF3 and Sc1−xAlxF3 but contrary to other NTE materials.

In the past decades, the families of negative thermal expansion (NTE) materials have been in the uninterrupted growth with more new NTE materials reported; in particular, metal fluorides as the new members begin to draw attention. Herein, recent progress on the NTE properties of metal fluorides is reviewed, including compounds, mechanisms and the control of thermal expansion. Although some achievements have been made, there are still great development prospects. More in-depth investigations on metal fluorides with NTE behavior are expected.

The antiperovskite Mn3+xNi1–xN compounds have been synthesized and characterized by a variety of experimental techniques. After Mn doping at the Ni site, both ferromagnetic characteristics and an Invar-like effect were observed in the antiferromagnetic host material. The observed Invar-like behavior was assumed to be related to the characteristic magnetic structure induced by the doping. Neutron diffraction results prove that the Mn doping stabilizes the special Γ5g antiferromagnetic phase with strong spin–lattice coupling that can be tuned to achieve Invar-like behavior. The magnetovolume effect (MVE) and significant correlation between spin and lattice were confirmed for the Γ5g magnetic phase by the first-principles calculations. Moreover, Mn 3d electrons were revealed to be the key factor for the MVE from the calculations. Our study presents a new mechanism for precisely controlling the zero thermal expansion of a single compound by achieving the special Γ5g magnetic phase of Mn atoms.

The Mn

An Mn3Cu0.5Ge0.5N/Cu composite was synthesized with 50 wt.% Cu and 50 wt.% Mn3Cu0.5Ge0.5N. The composite has a nearly zero thermal expansion behavior around room temperature and consists of Cu, Mn3Cu0.5Ge0.5N with a small number of MnO particles. There are no chemical reactions between these phases and the thermal expansion property of the composite is stable. Based on the distribution of Cu and Mn3Cu0.5Ge0.5N phases in the composite, we built a structure model to clarify the stability of Mn3Cu0.5Ge0.5N/Cu composite.

We report a large magnetic entropy change observed in the antiperovskite Mn 3 Cu 0.89 N 0.96 . Based on the heat flow peak measured by differential scanning calorimetry, the total entropy change according to the structural transition (tetragonal to cubic) was calculated to be ∼60 J kg –1 K –1 while the magnetic entropy change accounts for ∼22.5% of the total entropy under a 50 kOe magnetic field at 145 K. To clarify the origin of the magnetic entropy change, we managed to control the structure transition using a magnetic field. It was found that the magnetic entropy change originates from the transformation from antiferromagnetic (AFM) to ferromagnetic (FM) as well as from the phase transition from cubic to tetragonal under the magnetic field. In the tetragonal phase, a magnetic field can drive the AFM component to transform gradually to the FM component. The magnetic field can also change the phase fraction in the tetragonal and cubic two-phase coexistence region, a similar behavior to that induced by temperature. In the current system, only 5.4% of the cubic phase transforms to the tetragonal phase at 5 Tesla (T), indicating there is still much latent entropy in Mn 3 Cu 0.89 N 0.96 .

Mn3Zn0.7Ge0.3N/Al composites were successfully fabricated by pressure infiltration technology. The large positive thermal expansion of Al is suppressed by adding Mn3Zn0.7Ge0.3N component. Nearly zero thermal expansion is achieved in the composite with 30 vol.% Mn3Zn0.7Ge0.3N. Moreover, the bending stress and modulus of Mn3Zn0.7Ge0.3N/Al composites increase gradually with increasing Mn3Zn0.7Ge0.3N content. The low thermal expansion and good mechanical properties of these materials could be beneficial to the electronic packaging and precision fields.

We report a robust perpendicularly magnetized β-W/CoFeB/MgO multilayer structure. For the first time, we demonstrate efficient spin–orbit torque (SOT) switching and a highly thermally stable annealing process with this structure using X-ray diffraction tests, the harmonic technique, and SOT-driven magnetization switching measurements. These results may enable applications of SOT-based magnetic random access memory, which is required for integration in the CMOS back-end-of-line process.

A baromagnetic effect in a novel tetragonal magnetic structure is introduced by vacancies in Mn3 Ga0.95 N0.94 , due to the change of the Mn-Mn distance and their spin re-orientation induced by a pressure field. This effect is proven for the first time in antiperovskite compounds by neutron powder diffraction analysis. This feature will enable wide applications in magnetoelectric devices and intelligent instruments.

The near-zero temperature coefficient of resistivity (NZ-TCR) behavior is reported in the antiperovskite compounds Mn3+xNi1−xN (0 ≤ x ≤ 0.333). Our results indicate that the broad temperature range (above 275 K extending to above 220 K) of NZ-TCR is obtained by Mn doping at the Ni site. The short-range magnetic ordering is revealed by both neutron powder diffraction and inverse magnetic susceptibility. Further, we find a strong correlation between the anomalous resistivity change of Mn3+xNi1−xN from the metal-like to the NZ-TCR behavior and the lack of the long-range magnetic ordering. The possible mechanism of NZ-TCR behavior is discussed using the spin-disorder scattering model.

The effects of N substitution on the magnetic properties of Mn3InC1−xNx (0.0 ≤ x ≤ 0.7) are investigated systematically. Partial substitution of N for C leads to the monotonic reduction in both the Curie temperature TC and saturated magnetization MS. The final results obtained from thermo-magnetic curves demonstrate that Mn3InC1−xNx samples show a magnetic phase transition from a paramagnetic (PM) state to a ferrimagnetic (FIM) state consisting of ferromagnetic (FM) and antiferromagnetic (AFM) components. In addition, there is a competition between the AFM component and the FM component in the FIM state with the change of the N-doped content. Magnetic measurements of Mn3InC at 100 Oe and 5000 Oe indicate the metastability and the coexistence of different magnetic phases at lower temperature. The spans of FIM phase broaden gradually with further N doping. The mechanism for the induction of the complicated magnetic state is still in controversy. However, the results clearly show that the doping at the X site in antiperovskite Mn3AX materials is as useful as that of the A and Mn sites.