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Rectifying Characteristics and Semiconductor–Metal Transition Induced by Interfacial Potential in the Mn3CuN/n-Si Intermetallic Heterojunction
- Source :
- ACS Applied Materials & Interfaces. 9:12592-12600
- Publication Year :
- 2017
- Publisher :
- American Chemical Society (ACS), 2017.
-
Abstract
- The Mn3CuN/n-Si heterojunction device is first designed in the antiperovskite compound, and excellent rectifying characteristics are obtained. The rectification ratio (RR) reaches as large as 38.9 at 10 V, and the open-circuit voltage Voc of 1.13 V is observed under temperature of 410 K. The rectifying behaviors can be well described by the Shockley equation, indicating the existence of a Schottky diode. Simultaneously, a particular semiconductor–metal transition (SMT) behavior at 250 K is also observed in the Mn3CuN/n-Si heterojunction. The interfacial band bending induced inversion layer, which is clarified by the interfacial schematic band diagrams, is believed to be responsible for the SMT and rectifying effects. This study can develop a new class of materials for heterojunction, rectifying devices, and SMT behaviors.
- Subjects :
- Materials science
business.industry
Intermetallic
Schottky diode
Heterojunction
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Antiperovskite
Band bending
Semiconductor
Rectification
0103 physical sciences
Optoelectronics
General Materials Science
010306 general physics
0210 nano-technology
business
Voltage
Subjects
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi...........08149a9cc7a88e4d5a5f40af3a9a5418