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15 results on '"Ghibaudo, Gérard"'

1. Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions

Author

Ghibaudo, Gérard, Cassé, M., Maria, F. Serra Di Santa, Theodorou, C., Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Condensed Matter Physics, ComputingMilieux_MISCELLANEOUS, Electronic, Optical and Magnetic Materials
Abstract

International audience

Published
2022
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2. Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology

Author

Kammeugne, R. Kom, Kammeugne, Romeo Kom, Leroux, Charles, Cluzel, Jacques, Vauche, Laura, Le Royer, Cyrille, Gwoziecki, Romain, Biscarrat, Jérôme, Gaillard, Fred, Charles, Matthew, Bano, Edwige, Ghibaudo, Gérard, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)

Subjects
010302 applied physics, Materials science, business.industry, Extraction (chemistry), Gallium nitride, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Function (mathematics), High-electron-mobility transistor, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], chemistry, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Wafer, 0210 nano-technology, business, Device parameters, ComputingMilieux_MISCELLANEOUS, Communication channel
Abstract

We develop a new protocol based on Y-function for accurate statistical extraction of electrical parameters of High Electron Mobility Transistor (HEMT) devices for GaN technology. Relevant electrical parameters such as oxide capacitance, threshold voltage, effective mobilities and access resistance are extracted. This protocol has been verified over a large range of channel lengths for two normally-off device HEMT GaN wafers having different levels of access resistances.

Published
2020
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3. On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

Author

Balestra, Francis, Ghibaudo, Gérard, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2020

4. Experimental and theoretical investigation of RRAM endurance statistical behavior

Author

Robayo, D. Alfaro, SASSINE, G., Rafhay, Quentin, Ghibaudo, Gérard, Molas, Gabriel, Nowak, E., Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and IEEE

Subjects
Hardware_MEMORYSTRUCTURES, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

session 13: Memory; International audience

Published
2018

5. Experimental and theoretical investigation of RRAM endurance statistical behavior

Author

Robayo, D. Alfaro, SASSINE, G., Rafhay, Quentin, Ghibaudo, Gérard, Molas, Gabriel, Nowak, E., Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and IEEE

Subjects
Hardware_MEMORYSTRUCTURES, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

session 13: Memory; International audience

Published
2018

6. Experimental and theoretical investigation of RRAM endurance statistical behavior

Author

Robayo, D. Alfaro, Sassine, G., Rafhay, Quentin, Ghibaudo, Gérard, Molas, Gabriel, Nowak, E., Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and IEEE

Subjects
Hardware_MEMORYSTRUCTURES, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

session 13: Memory; International audience

Published
2018

7. Stability and in depth characterization of low-voltage organic thin film transistors based on low-k/high-k bilayer dielectric

Author

Gaïtis, Alexandre, Charbonneau, Micaël, Ghibaudo, Gérard, Coppard, R., Serbutoviez, Christophe, Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

session 3: Emerging Materials & Technologies; International audience

Published
2018

9. HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

Author

Garbin, Daniele, Vianello, Elisa, Bichler, Olivier, Rafhay, Quentin, Gamrat, Christian, Ghibaudo, Gérard, Desalvo, Barbara, Perniola, Luca, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA), ANR-10-LABX-0055/10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
stochastic neuromorphic system, visual pattern extraction, Convolutional neural network (CNN), resistive RAM (RRAM) synapse, spike timing-dependent plasticity (STDP), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; In this paper, the use of HfO 2 -based oxide-based resistive memory (OxRAM) devices operated in binary mode to implement synapses in a convolutional neural network (CNN) is studied. We employed an artificial synapse composed of multiple OxRAM cells connected in parallel, thereby providing synaptic efficacies. Electrical characterization results show that the proposed HfO 2 -based OxRAM technology offers good electrical properties in terms of endurance (>10 8 cycles), speed ( 98%) is demonstrated for a complex visual pattern recognition application. We demonstrated that the resistance variability and the reduced memory window of the OxRAM cells when operated at extremely low programming conditions (

Published
2015
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10. A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Pt/HfO2/Pt Resistive Random Access Memory

Author

Xue, Kan-Hao, Traoré, Boubacar, Blaise, Philippe, Fonseca, Leonardo, Vianello, Elisa, Molas, Gabriel, De Salvo, Barbara, Ghibaudo, Gérard, Magyari-Kope, Blanka, Nishi, Yoshio, Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), University of Campinas [Campinas] (UNICAMP), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA), Stanford University [Stanford], Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Universidade Estadual de Campinas = University of Campinas (UNICAMP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Stanford University, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
hafnium compounds, electrochemical processes, nanotechnology, metal-insulator structures, semiconductor memories, Dielectric breakdown, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; Through ab initio calculations, we propose that the conductive filaments in Pt/HfO 2 /Pt resistive random access memories are due to HfO x suboxides, possibly tetragonal, where x ≤ 1.5. The electroforming process is initiated by a continuous supply of oxygen Frenkel defect pairs through an electrochemical process. The accumulation of oxygen vacancies leads to metallic suboxide phases, which remain conductive even as ultranarrow 1-nm 2 filaments embedded in an insulating HfO 2 matrix. Our experiments further show that the filaments remain as major leakage paths even in the OFF-state. Moreover, thermal heating may increase the OFF-state resistance, implying that there are oxygen interstitials left in the oxide layer, which may recombine with the oxygen vacancies in the filaments at high temperature.

Published
2014
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11. Semiconductors and semimetals. : optical and photothermal characterization / volume editors: Constantinos Christofides, Gérard Ghibaudo

Author

Willardson, Robert K., Weber, Eicke R., Ghibaudo, Gérard, Christofides, Constantinos, and Christofides, Constantinos [0000-0002-4020-4660]

Subjects
Ellipsometry, Semiconductors, Semiconductors -- Characterization, Ion implantation, Semiconductors -- Optical properties, Semiconductors -- Thermal properties, Semiconductors -- Defects, Semimetals
Abstract

Previous volumes co-edited by Albert C. Beer, who died January 19, 1997.

Published
1997

13. Effect of disorder and defects in ion-implanted semiconductors : optical and photothermal characterization

Author

Christofides, Constantinos, Ghibaudo, Gérard, Willardson, Robert K., Weber, Eicke R., and Christofides, Constantinos [0000-0002-4020-4660]

Subjects
Semiconductors, Ion implantation, Semimetals
Abstract

Includes bibliographical references and index. Contents: Vol. 46. Effect of disorder and defects in ion-implanted semiconductors : optical and photothermal characterization / volume editors Constantinos Christofides, Gérard Ghibaudo. c1997. 316

Published
1997

14. Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Author

Le Guevel, L., Billiot, G., Cardoso Paz, Bruna, Tagliaferri, M., de Franceschi, Silvano, Maurand, R., Cassé, Mikael, Zurita, M., Sanquer, M., Vinet, Maud, Jehl, X., Jansen, A., Pillonnet, G., Giustino, Feliciano, Lee, Jin Hong, Trier, Felix, Bibes, Manuel, Winter, Stephen, Valentí, Roser, Son, Young-Woo, Taillefer, Louis, Heil, Christoph, Figueroa, Adriana, Plaçais, Bernard, Wu, Quansheng, Yazyev, Oleg, Bakkers, Erik, Nygård, Jesper, Forn-Díaz, Pol, Mciver, J, Torres, L, Low, Tony, Kumar, Anshuman, Galceran, Regina, Valenzuela, Sergio, Costache, Marius, Manchon, Aurélien, Kim, Eun-Ah, Schleder, Gabriel, Fazzio, Adalberto, Roche, Stephan, Theodorou, Christoforos, Ghibaudo, Gérard, Kammler, Thorsten, Pirro, Luca, Meunier, Tristan, Gaillard, Fred, Poiroux, Thierry, Vincent, Emmanuel, Galy, Philippe, Juge, André, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), University of Texas at Austin [Austin], Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), Institut für Theoretische Physik [Frankfurt am Main] (ITP), and Goethe-Universität Frankfurt am Main

Subjects
[PHYS]Physics [physics], 010302 applied physics, Electron mobility, Materials science, Physics and Astronomy (miscellaneous), business.industry, Scattering, Transistor, Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, Thermal conduction, 01 natural sciences, Buried oxide, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Optoelectronics, Positive bias, Thin film, 0210 nano-technology, business
Abstract

International audience; Abstract In recent years, the notion of ‘Quantum Materials’ has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and coldatom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moiré materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. We stress that this article is not meant to be a fully comprehensive review but rather an up-to-date snapshot of different areas of research on quantum materials with a minimal number of references focusing on the latest developments.

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15. Statistical charge-based modeling of 1/f noise in standard and high-voltage MOS transistors

Author

Mavredakis Nikolaos, Bucher Matthias, Μπαλας Κωστας, Balas Costas, Δημητριάδης Χαράλαμπος, Dimitriadis Charalabos, Καλαϊτζακης Κωστας, Kalaitzakis Kostas, Birbas, Alexios Nikolaos, Enz Christian, Ghibaudo, Gérard, Επιβλέπων: Bucher Matthias, Advisor: Bucher Matthias, Μέλος επιτροπής: Μπαλας Κωστας, Committee member: Balas Costas, Μέλος επιτροπής: Δημητριάδης Χαράλαμπος, Committee member: Dimitriadis Charalabos, Μέλος επιτροπής: Καλαϊτζακης Κωστας, Committee member: Kalaitzakis Kostas, Committee member: Birbas, Alexios Nikolaos, Μέλος επιτροπής: Enz Christian, and Committee member: Ghibaudo, Gérard

Subjects
Bias and area dependence, CMOS, Charge-based model, HV-MOS process, Low frequency noise, Noise mean value and variability
Abstract

Summarization: Nowadays, analog and RFIC applications are exclusively been designed by CMOS technology because of many advantages such as the high level of integration, the low cost and low consumption that it offers. The achievement of integration on a single chip (SoC) both for analog and digital systems triggered a great boost in the domination of CMOS especially with the downscaling of MOSFET dimensions. Apart from conventional CMOS, HV-MOS process is also widely used in specific applications such as automotive industry, scientific and medical applications and consumer electronics. The latter kind of power applications created the need of the usage of power devices such as HV-MOSFETs and nowadays in circuit design, high-voltage parts are integrated together with low-voltage modules. Nevertheless, the performance of both CMOS and HV-MOS design can be limited by low frequency noise (LFN) which becomes really significant in state of the art technologies because it is inversely proportional to channel area. Despite the fact that is dominant for lower frequencies below the corner frequency, it can prove to be a significant hurdle even for high-frequency (RF) applications due to its up conversion in phase noise in VCO design for example. Furthermore, in advanced ultradeep nano-scaled transistors, corner frequencies of several MHz can be noticed and thus analog designers can not ignore LFN. As far as HV-MOSFETs are concerned, circuits such as oscillators, analog baseband and bandgap reference can be limited by LFN. In general, it affects any kind of MOS device but it can also be used as an effective way to evaluate the quality and reliability of a MOS transistor. LFN is distinguished into two kinds; random telegraph signal (RTS) noise and flicker or 1/f noise. RTS noise is created by the generation-recombination process or trapping/detrapping mechanism at the silicon oxide interface. Each such trap can create an RTS in time domain or a Lorentzian-like spectrum in frequency domain. RTS noise prevails in smaller area transistors where the traps are only few. In larger devices, on the other hand, the number of traps is quite large and the superposition of Lorentzian spectra can lead to 1/f behavior and thus it creates 1/f noise. This connection of RTS with 1/f noise is fully described by carrier number fluctuation effect which constitutes one of the main 1/f noise generators in MOS devices. Two other phenomena create 1/f noise and these are mobility fluctuation and series resistance effects. It is experimentally shown that each of these effects is dominant under different operating conditions. Mean value and variability of LFN are both area- and bias-dependent. Variability increases as device dimensions shrink bearing similarity with the behavior of mean value noise. The same trend can be observed in the bias-dependence of 1/f noise variability. Carrier number fluctuation effect has been proven to increase normalized flicker noise WL SID=ID^2 at 1Hz, in moderate and strong inversion and the same is confirmed for its variability while mobility fluctuation effect is considered responsible for the increase of normalized 1/f noise in weak inversion and its variability also increases there. This bias-dependence of flicker noise variability is of great concern especially since the downscaling of advanced nanotechnologies has led to circuit operation in moderate or even in weak inversion. Flicker noise in HV MOSFETs is expected to be generated by the same causes as in conventional MOSFETs since the same operating principles rule both kind of these MOS devices due to the existence of the oxide interface. Thus, it is experimentally shown that in the LV or channel part of the HV-MOSFET, carrier number fluctuation, mobility fluctuation and series resistance effects are the main contributors to 1/f noise. This was already known and the main question was if any similar effect is observed in drift region. Our analysis showed that the extension of gate oxide in the surface of drift region, causes a similar carrier number fluctuation effect which can give rise to 1/f noise. This noise becomes significant under linear region and strong inversion regime of long channel transistors since only under these conditions it reaches a similar level as the noise generated in the channel. Because of the significant impact of LFN in advanced analog and RF circuit design, the usage of correct, physics-based, compact models both for mean value and statistical behavior of LFN has become essential for noise simulation. Within the context of this Thesis, a charge-based compact model both for the mean-value and the variability of 1/f noise was implemented, validated at an experimental 180 nm CMOS process with measurements in our lab and appended in the charge-based EKV3 compact MOSFET model. The mean value model was also tested at an 90nm CMOS process provided by the industry while the variability model was also tested at an 140 nm CMOS process. The analytical, charge-based approach for 1/f noise statistics is directly related to the physical effects that generate 1/f noise in MOS devices and this is something proposed for the first time. A similar charge-based 1/f noise compact model is proposed for the first time for HV-MOSFETs after exploring and locating new noise sources that arise from the drift region of the device. An expression for the variability of 1/f noise arising from the channel of HV-MOSFETs is also proposed but is not validated since sufficient statistical data were not available. The mean value model was validated with data from an 350 nm HV-MOS process provided by ams AG. Measurements were performed by us in a new 1/f noise measurement set-up specialized for HV-MOSFETs and provided by AdMOS. Characterization of 1/f noise data in all the above cases confirms the existing theory while the developed 1/f noise models both for CMOS and HV-MOS technologies give qualitively good results over a wide range of area and operating conditions

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