Search

The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, we combine spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi$_{1-x}$Sb$_x$ ultrathin films, down to few nanometers where confinement effects emerge. We correlate this large conversion efficiency, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. %We demonstrate this for film thickness down to a few nanometers, Both surface state robustness and sizeable conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$ thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation., 23 pages, 3 figures

International audience; Hybridization between f electrons and conduction bands (c-f hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn5 heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of T = 6 K. The used photon energy of 122 eV corresponds to Ce 4d-4f resonance. Calculations carried out with relativistic multiple scattering Korringa-Kohn-Rostoker method and one-step model of photoemission yielded realistic simulation of the ARPES spectra indicating that Ce-In surface termination prevails. Surface states, which have been identified in the calculations, contribute significantly to the spectra. Effects of the hybridization strongly depend on wave vector. They include a dispersion of heavy electrons and bands gaining f-electron character when approaching Fermi energy. We have also observed a considerable variation of felectron spectral weight at EF , which is normally determined by both matrix element effects and wave vector dependent c-f hybridization. Fermi surface scans covering a few Brillouin zones revealed large matrix element effects. A symmetrization of experimental Fermi surface, which reduces matrix element contribution, yielded a specific variation of 4f-electron enhanced spectral intensity at EF aroundΓ andM points. Tight-binding approximation calculations for Ce-In plane provided the same universal distribution of 4f-electron density for a range of values of the parameters used in the model.

Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond time scale. Here, we use engineered Co2MnAlxSi1-x Heusler compounds to adjust the degree of spin polarization P from 60 to 100% and investigate how it correlates with the damping. We demonstrate experimentally that the damping decreases when increasing the spin polarization from 1.1 10-3 for Co2MnAl with 63% spin polarization to an ultra-low value of 4.10-4 for the half-metal magnet Co2MnSi. This allows us investigating the relation between these two parameters and the ultrafast demagnetization time characterizing the loss of magnetization occurring after femtosecond laser pulse excitation. The demagnetization time is observed to be inversely proportional to 1-P and as a consequence to the magnetic damping, which can be attributed to the similarity of the spin angular momentum dissipation processes responsible for these two effects. Altogether, our high quality Heusler compounds allow controlling the band structure and therefore the channel for spin angular momentum dissipation.

International audience; The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements in high crystalline quality films (Co 2 MnZ with Z=Si, Ge, Sn, Al, Ga, Sb), electronic properties such as the minority spin band gap, Fermi energy position in the gap and spin polarization can be tuned and the consequence on magnetization dynamics analyzed. The experimental results allow us to directly explore the interplay of spin polarization, spin gap, Fermi energy position and the magnetic damping obtained in these films, together with ab initio calculation predictions. The ultra-low magnetic damping coefficients measured in the range 4.1 10-4-9 10-4 for Co 2 MnSi, Ge, Sn, Sb are the lowest values obtained on a conductive layer and offers a clear experimental demonstration of theoretical predictions on Half-Metal Magnetic Heusler compounds and a pathway for future materials design.

International audience

International audience; In Sr$_2$ IrO$_4$ and Sr$_3$ Ir$_2$ O$_7$ , correlations, magnetism, and spin-orbit coupling compete on similar energy scales, creating a new context to study metal-insulator transitions (MIT). We use here angle-resolved photoemission to investigate the MIT as a function of hole and electron doping in Sr$_3$ Ir$_2$ O$_7$ , obtained respectively by Ir/Rh and Sr/La substitutions. We show that there is a clear reduction as a function of doping of the gap between a lower and upper band on both sides of the Fermi level, from 0.2 to 0.05 eV. Although these two bands have a counterpart in band structure calculations, they are characterized by a very different degree of coherence. The upper band exhibits clear quasiparticle peaks, while the lower band is very broad and loses weight as a function of doping. Moreover, their ARPES spectral weights obey different periodicities, reinforcing the idea of their different nature. We argue that a very similar situation occurs in Sr$_2$ IrO$_4$ and conclude that the physics of the two families is essentially the same.

A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO2 layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-layer depth resolution of these properties. Applying SW photoemission to Bi2Sr2CaCu2O8+δ yields the depth distribution of atomic composition and the layer-resolved densities of states. We detect significant Ca presence in the SrO layers and oxygen bonding to three different cations. The layer-resolved valence electronic structure is found to be strongly influenced by the atomic supermodulation structure, as determined by comparison to density functional theory calculations, by Ca-Sr intermixing, and by correlation effects associated with the Cu 3d-3d Coulomb interaction, further clarifying the complex interactions in this prototypical cuprate. Measurements of this type for other quasi-two-dimensional materials with large c represent a promising future direction.

The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$. The near E$_F$ Fe 3d-derived band dispersions near the $\Gamma$ and X high-symmetry points show changes due to Ir substitution, but the FS topology is preserved. From momentum dependent measurements of the superconducting gap measured at T = 5 K, we estimate an essentially isotropic s-wave gap ($\Delta\sim5.25\pm 0.25$ meV), indicative of strong-coupling superconductivity with 2$\Delta$/k$_{B}$T$_{c}\simeq$ 5.8. The gap gets closed at temperatures T $\geq$ 10 K, and this is attributed to the resistive phase which sets in at T$_M$ = 18 K due to the Eu$^{2+}$-derived magnetic order. The modifications of the FS with Ir substitution clearly indicates an effective hole doping with respect to the parent compound., Comment: 6 pages, 5 figures

International audience

Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn doping of the {\alpha}-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the electric polarization, magnetization and spin texture are coupled to each other. Employing spin- and angle-resolved photoemission spectroscopy in bulk- and surface-sensitive energy ranges and by varying dipole transition matrix elements, we disentangle the bulk, surface and surface-resonance states of the electronic structure and determine the spin textures for selected parameters. From our results, we derive a comprehensive model of the {\alpha}-GeTe surface electronic structure which fits experimental data and first principle theoretical predictions and we discuss the unconventional evolution of the Rashba-type spin splitting upon manipulation by external B- and E-fields., Comment: 7 pages, 7 figures, 1 ancillary file

We report the existence of a two-dimensional electron system (2DES) at the (001) surface of CaTiO3. Using angle-resolved photoemission spectroscopy, we find a hybridization between the dxz and dyz orbitals, not observed in the 2DESs at the surfaces of other ATiO3 perovskites, e.g., SrTiO3 or BaTiO3. Based on a comparison of the 2DES properties in these three materials, we show how the electronic structure of the 2DES (bandwidth, orbital energy order, and electron density) is coupled to different typical lattice distortions in perovskites. The orbital hybridization in orthorhombic CaTiO3 results from the rotation of the oxygen octahedra, which can also occur at the interface of oxide heterostructures to compensate strain. More generally, the control of the orbital energy order in 2DES by choosing different A-site cations in perovskites offers a gateway toward 2DESs in oxide heterostructures beyond SrTiO3. Fil: Rödel, T. C.. Université Paris Sud; Francia. Synchrotron SOLEIL; Francia Fil: Vivek, M.. Université Paris Sud; Francia. Centre National de la Recherche Scientifique; Francia Fil: Fortuna, F.. Université Paris Sud; Francia Fil: Le Fèvre, P.. Synchrotron SOLEIL; Francia Fil: Bertran, F.. Synchrotron SOLEIL; Francia Fil: Weht, Ruben Oscar. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Goniakowski, J.. Universite de Paris VI. Institut des Nanosciences de Paris; Francia Fil: Gabay, M.. Université Paris Sud; Francia. Centre National de la Recherche Scientifique; Francia Fil: Santander Syro, A. F.. Université Paris Sud; Francia

The crossover from Bardeen-Cooper-Schrieffer (BCS) superconductivity to Bose-Einstein condensation (BEC) is difficult to realize in quantum materials because, unlike in ultracold atoms, one cannot tune the pairing interaction. We realize the BCS-BEC crossover in a nearly compensated semimetal Fe$_{1+y}$Se$_x$Te$_{1-x}$ by tuning the Fermi energy, $\epsilon_F$, via chemical doping, which permits us to systematically change $\Delta / \epsilon_F$ from 0.16 to 0.5 were $\Delta$ is the superconducting (SC) gap. We use angle-resolved photoemission spectroscopy to measure the Fermi energy, the SC gap and characteristic changes in the SC state electronic dispersion as the system evolves from a BCS to a BEC regime. Our results raise important questions about the crossover in multiband superconductors which go beyond those addressed in the context of cold atoms.

One-dimensional (1D) electronic states were discovered on 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectroscopy (ARPES). The 1D state showed steep, Dirac-cone-like dispersion along the 1D atomic structure with a finite direct bandgap opening as large as 150 meV. Moreover, spin-resolved ARPES revealed the spin polarization of the 1D unoccupied states as well as that of the occupied states, the orientation of which inverted depending on the wave vector direction parallel to the 1D array on the surface. These results reveal that a spin-polarized quasi-1D carrier was realized on the surface of 1D Bi with highly efficient backscattering suppression, showing promise for use in future spintronic and energy-saving devices., 9 pages (4 figures for the main text, 7 for supplemental material). To be published in Physical Review Materials (Copyright is transferred to APS)

Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn doping of the ��-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the electric polarization, magnetization and spin texture are coupled to each other. Employing spin- and angle-resolved photoemission spectroscopy in bulk- and surface-sensitive energy ranges and by varying dipole transition matrix elements, we disentangle the bulk, surface and surface-resonance states of the electronic structure and determine the spin textures for selected parameters. From our results, we derive a comprehensive model of the ��-GeTe surface electronic structure which fits experimental data and first principle theoretical predictions and we discuss the unconventional evolution of the Rashba-type spin splitting upon manipulation by external B- and E-fields., 7 pages, 7 figures, 1 ancillary file

International audience; We report the existence of a two-dimensional electron system (2DES) at the ( 001 ) surface of CaTiO 3 . Using angle-resolved photoemission spectroscopy, we find a hybridization between the d x z and d y z orbitals, not observed in the 2DESs at the surfaces of other A TiO 3 perovskites, e.g., SrTiO 3 or BaTiO 3 . Based on a comparison of the 2DES properties in these three materials, we show how the electronic structure of the 2DES (bandwidth, orbital energy order, and electron density) is coupled to different typical lattice distortions in perovskites. The orbital hybridization in orthorhombic CaTiO 3 results from the rotation of the oxygen octahedra, which can also occur at the interface of oxide heterostructures to compensate strain. More generally, the control of the orbital energy order in 2DES by choosing different A -site cations in perovskites offers a gateway toward 2DESs in oxide heterostructures beyond SrTiO 3 .

The church as one of its goals is to foster education. Education remains critically important in the formation of the human person. The research is based primary to answer the following question With emphasis on Roman Catholic Secondary Schools in Kumbo diocese, how are the values of morality, good behavior and holistic developments promoted through pedagogies and management in schools?

The electronic states of Au-induced atomic nanowires on Ge(001) (Au/Ge(001) NWs) have been investigated by angle-resolved photoelectron spectroscopy with linearly polarized light. We have found three electron pockets around $\bar{J}\bar{K}$, where the Fermi surfaces are closed in a surface Brillouin zone, indicating that the surface states of Au/Ge(001) NWs are two-dimensional whereas the atomic structure is one-dimensional. The two-dimensional metallic states exhibit remarkable suppression of the photoelectron intensity near a Fermi energy. This suppression can be explained by the correlation and localization effects in disordered metals, which is a deviation from a Fermi-liquid model., Comment: 5 pages, 4 figures

We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) {\alpha}-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of {\alpha}-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pumping at room temperature from Fe through Ag into {\alpha}-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it., Comment: 14 pages, 5 figures

We investigate by angle and time resolved photoemission spectroscopy the unusual insulating state of strongly distorted triangular V slabs in (LaS)1.196VS2. We show that the electronic structure is dominated by the lowest band of the V t2g manifold, which disperses over 0.7 eV and is nearly filled. Hence, (LaS)1.196VS2 is not a Mott insulator. The spectra are strongly temperature dependent, shifting by 100 meV upon cooling to 50 K. The sudden photoexcitation at 50K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We conclude that a very strong electron-phonon coupling makes this state extremely sensitive to small perturbations of the V clusters distortions.

We study with angle-resolved photoelectron spectroscopy the evolution of the electronic structure of Sr2IrO4, when holes or electrons are introduced, through Rh or La substitutions. At low dopings, the added carriers occupy the first available states, at the bottom or top of the gap, revealing an asymmetric gap of 0.7 eV, in good agreement with scanning tunnel microscope measurements. At further doping, we observe a reduction of the gap and a transfer of spectral weight across the gap, although the quasiparticle weight remains very small. We discuss the origin of the in-gap spectral weight as a local distribution of gap values.

We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) ��-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of ��-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pumping at room temperature from Fe through Ag into ��-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it., 14 pages, 5 figures

Mn5Ge3(001) thin films grown on Ge(111) were studied by angle-and spin-resolved photoemission using synchrotron radiation in the 17-40 eV photon energy range. The photoelectron spectra were simulated starting from a first-principles band-structure calculation for the ground state, using the free-electron approximation for the final states, taking into account photohole lifetime effects and k(perpendicular to) broadening plus correlation effects, but ignoring transition matrix elements. The measured spin polarizations for the various k points investigated in the Gamma MLA plane of the Brillouin zone are found to be in fair enough agreement with the simulated ones, providing a strong support to the ground-state band-structure calculations. Possible origins for the departures between either simulations and experiments or previous and present experiments are discussed.

We report the existence of confined electronic states at the (110) and (111) surfaces of SrTiO3. Using angle-resolved photoemission spectroscopy, we find that the corresponding Fermi surfaces, subband masses, and orbital ordering are different from the ones at the (001) surface of SrTiO3. This occurs because the crystallographic symmetries of the surface and sub-surface planes, and the electron effective masses along the confinement direction, influence the symmetry of the electronic structure and the orbital ordering of the t2g manifold. Remarkably, our analysis of the data also reveals that the carrier concentration and thickness are similar for all three surface orientations, despite their different polarities. The orientational tuning of the microscopic properties of two-dimensional electron states at the surface of SrTiO3 echoes the tailoring of macroscopic (e.g. transport) properties reported recently in LaAlO3/SrTiO3 (110) and (111) interfaces, and is promising for searching new types of 2D electronic states in correlated-electron oxides., Accepted for publication as a Letter in Physical Review Applied

The research field of spintronics has sought, over the past 25 years and through several materials science tracks, a source of highly spin-polarized current at room temperature. Organic spinterfaces, which consist in an interface between a ferromagnetic metal and a molecule, represent the most promising track as demonstrated for a handful of interface candidates. How general is this effect? We deploy topographical and spectroscopic techniques to show that a strongly spin-polarized interface arises already between ferromagnetic cobalt and mere carbon atoms. Scanning tunneling microscopy and spectroscopy show how a dense semiconducting carbon film with a low band gap of about 0.4 eV is formed atop the metallic interface. Spin-resolved photoemission spectroscopy reveals a high degree of spin polarization at room temperature of carbon-induced interface states at the Fermi energy. From both our previous study of cobalt/phthalocyanine spinterfaces and present x-ray photoemission spectroscopy studies of the cobalt/carbon interface, we infer that these highly spin-polarized interface states arise mainly from sp2-bonded carbon atoms. We thus demonstrate the molecule-agnostic, generic nature of the spinterface formation.

cited By 4; International audience; Fe1-xCox epitaxial layers were grown by molecular beam epitaxy and controlled using in situ characterization tools (electron diffraction, x-ray photoelectron, and Auger spectroscopies) in order to use these alloys in magnetic tunnel junctions. Thick films are shown to be BCC up to x=70%, whereas thin films grown on Fe(001) are BCC over the whole Co concentration range up to a critical thickness. Fe/Co intermixing is also examined in detail. The tunnel magnetoresistance and conductance of MgO-based magnetic tunnel junctions built with BCC Fe1-xCox electrodes show peculiar voltage dependencies. Their interpretation relies on spin- and symmetry-resolved photoemission measurements and ab initio calculations. The bulk and interfacial occupied states detected by photoemission are compared to the calculated ones. Experimental results and ab initio calculations are in good agreement. Finally, the experimental conductance curves are compared to the autoconvolution of the Δ1 density of states in which both bulk and interface states are taken into account.

Using angle-resolved photoemission spectroscopy, we study the evolution of the number of carriers in Ba(Fe₁₋Cox)₂As₂ as a function of Co content and temperature. We show that there is a k-dependent energy shift compared to density functional calculations, which is large below 100 K at low Co contents and reduces the volume of hole and electron pockets by a factor 2. This k shift becomes negligible at high Co content and could be due to interband charge or spin fluctuations. We further reveal that the bands shift with temperature, changing significantly the number of carriers they contain (up to 50%). We explain this evolution by thermal excitations of carriers among the narrow bands, possibly combined with a temperature evolution of the k-dependent fluctuations.

Équipe 102 : Surfaces et Spectroscopies; International audience; The surface structure of alkali doped Si(111): B ultra-thin films has been studied by low-energy electron diffraction (LEED), X-ray photoemission spectroscopy (XPS) and scanning tunneling microscopy (STM). A comparative study of K/Si(111)-3 x 1 and K/Si(111):B-2 root 3 x 2 root 3R30 interfaces allowed us to determine the saturation coverage to be 0.5 monolayer in the later case. The 2 root 3-surface reconstruction is shown to be a common property of pure K, Rb, Cs materials and K0.4Rb0.6 alloys but progressively disappears if Rb is replaced by Ca. Taking into account the existence of two distinct boron sites in the ratio 1/3 as seen from B-1s core levels spectra, LAPW-DFT calculations have been carried out in order to optimize the atomic structure. As a result, alkali adatoms are shown to form trimers leading to a large modulation of the Si B bonds accompanied by an inhomogeneous doping of the dangling bonds in agreement with voltage dependent STM images

In all iron pnictides, the positions of the ligand alternatively above and below the Fe plane create 2 inequivalent Fe sites. This results in 10 Fe 3d bands in the electronic structure. However, they do not all have the same status for an ARPES experiment. There are interference effects between the 2 Fe that modulate strongly the intensity of the bands and that can even switch their parity. We give a simple description of these effects, notably showing that ARPES polarization selection rules in these systems cannot be applied by reference to a single Fe ion. We show that ARPES data for the electron pockets in Ba(Fe0.92Co0.08)2As2 are in excellent agreement with this model. We observe both the total suppression of some bands and the parity switching of some other bands. Once these effects are properly taken into account, the structure of the electron pockets, as measured by ARPES, becomes very clear and simple. By combining ARPES measurements in different experimental configurations, we clearly isolate each band forming one of the electron pockets. We identify a deep electron band along one ellipse axis with the dxy orbital and a shallow electron band along the perpendicular axis with the dxz/dyz orbitals, in good agreement with band structure calculations. We show that the electron pockets are warped as a function of kz as expected theoretically, but that they are much smaller than predicted by the calculation.

International audience; In combining spin-and symmetry-resolved photoemission, magnetotransport measurements and ab initio calculations we detangled the electronic states involved in the electronic transport in Fe 1Àx Co x ð001Þ=MgO=Fe 1Àx Co x ð001Þ magnetic tunnel junctions. Contrary to previous theoretical predictions , we observe a large reduction in TMR (from 530 to 200% at 20 K) for Co content above 25 atomic % as well as anomalies in the conductance curves. We demonstrate that these unexpected behaviors originate from a minority spin state with Á 1 symmetry that exists below the Fermi level for high Co concentration. Using angle-resolved photoemission, this state is shown to be a two-dimensional state that occurs at both Fe 1Àx Co x ð001Þ free surface, and more importantly at the interface with MgO. The combination of this interface state with the peculiar density of empty states due to chemical disorder allows us to describe in details the complex conduction behavior in this system. Since the discovery of giant magnetoresistance (GMR) in spin valves in 1988 [1], a new branch of physics referred to as spintronics has considerably developed. The discovery of the large tunnel magnetoresistance (TMR) in 1995 [2], the prediction of the spin-transfer mechanism in 1996 [3,4], and the demonstration of spin-dependent coherent tunnel-ing in MgO-based epitaxial MTJs in 2001-2004 [5–10], have largely contributed to developments in this field. Currently, a number of new areas are being explored, such as rf oscillators, devices and memories based on the spin-transfer-torque effect, electric field assisted switching , magnonics, or spincaloritronics [11]. In addition, industrial-scale devices such as magnetic recording heads already use the exceptional electrical properties of GMR and TMR. The technology transfer from research to industry continues today, with MRAM demonstrators based on MgO-based MTJs [12] and rf oscillators using spintronics devices. While commercialization as well as broad utilization into various areas of research has been rapid for spin-tronic devices, in many cases a full understanding of the underlying physics is lacking. MgO-based MTJs with FeCo or FeCoB electrodes are a striking example of this situation. FeCoðBÞ=MgO=FeCoðBÞð001Þ multilayers, fabricated by molecular beam epitaxy (MBE) or sputtering deposition are widely utilized for their high spin current injection efficiency and exceptional electrical sensitivity to any change in the magnetic configuration of the electrodes. Because of the huge TMR predicted by ab initio calculation for the equimolar and B2 ordered Fe 0:5 Co 0:5 alloy and for pure bcc Co (1000%–6000% at 0 K [13]), bcc FeCo(001) electrodes are now extensively used in MTJ fabrication. However, the situation is not so clear regarding the reported results. First, large TMR were actually obtained on MBE grown Fe=bcc Co=MgO=Co=Feð001Þ [14]. However, a heating of the whole stacking up to 250 C during 30 minutes suggest a possible alloying between Fe and Co. On the other hand, contrary to expectations, epitaxial Fe 0:5 Co 0:5 =MgO=Feð001Þ and Fe=MgO=Feð001Þ MTJs exhibit the same TMR [15]. It should be noted that the B2 order assumed in Ref. [13] is not observed. Finally, reported TMR of sputtered FeCo=MgO=FeCoð001Þ MTJs present a nonmonotonic dependence as a function of the Co concentration with a maximum around 25% of Co [16]. The detailed effect of Co alloying into Fe on the spin-dependent tunneling remains therefore obscure. In this Letter, we explain quantitatively the unexpected transport properties observed in FeCo=MgO=FeCoð001Þ MTJs. We demonstrate that transport measurements alone are not sufficient to complete the current understanding of this system, and that spin-, symmetry-, and angle-resolved photoemission, together with DFT calculations taking into account the chemical disorder, offer a unique path to probing directly the tunneling electrons. We use a specific photoemission experiment to untangle the different Bloch waves responsible for the conduction along (001) as a function of their symmetry (Á 1 or Á 5) and spin state (majority " or minority #), in contrast to standard transport measurements where all these contributions are mixed. bcc MgO-based MTJs with Fe 1Àx Co x ð001Þ electrodes were grown by coevaporation using MBE. The epitaxial relationship, growth mode, and surface flatness were controlled using reflection high energy electron diffraction (RHEED). In addition, the evaporation rates of the Co and Fe sources, and consequently the alloys stoichiometry, were accurately controlled by recording the intensity

Gold intercalation between the buffer layer and a graphene monolayer of epitaxial graphene on SiC(0001) leads to the formation of quasi free standing small aggregates of clusters. Angle Resolved Photoemission Spectroscopy measurements reveal that these clusters preserve the linear dispersion of the graphene quasiparticles and surprisingly increase their Fermi velocity. They also strongly modify the band structure of graphene around the Van Hove singularities (VHs) by a strong extension without charge transfer. This result gives a new insight on the role of the intercalant in the renormalization of the bare electronic band structure of graphene usually observed in Graphite and Graphene Intercalation Compounds.

We present a detailed comparison of the electronic structure of BaFe2As2 in its paramagnetic and antiferromagnetic (AFM) phases, through angle-resolved photoemission studies. Using different experimental geometries, we resolve the full elliptic shape of the electron pockets, including parts of dxy symmetry along its major axis that are usually missing. This allows us to define precisely how the hole and electron pockets are nested and how the different orbitals evolve at the transition. We conclude that the imperfect nesting between hole and electron pockets explains rather well the formation of gaps and residual metallic droplets in the AFM phase, provided the relative parity of the different bands is taken into account. Beyond this nesting picture, we observe shifts and splittings of numerous bands at the transition. We show that the splittings are surface sensitive and probably not a reliable signature of the magnetic order. On the other hand, the shifts indicate a significant redistribution of the orbital occupations at the transition, especially within the dxz/dyz system, which we discuss.

Despite many ARPES investigations of iron pnictides, the structure of the electron pockets is still poorly understood. By combining ARPES measurements in different experimental configurations, we clearly resolve their elliptic shape. Comparison with band calculation identify a deep electron band with the dxy orbital and a shallow electron band along the perpendicular ellipse axis with the dxz/dyz orbitals. We find that, for both electron and hole bands, the lifetimes associated with dxy are longer than for dxz/dyz. This suggests that the two types of orbitals play different roles in the electronic properties and that their relative weight is a key parameter to determine the ground state.

Similar to silicon that is the basis of conventional electronics, strontium titanate (SrTiO3) is the bedrock of the emerging field of oxide electronics. SrTiO3 is the preferred template to create exotic two-dimensional (2D) phases of electron matter at oxide interfaces, exhibiting metal-insulator transitions, superconductivity, or large negative magnetoresistance. However, the physical nature of the electronic structure underlying these 2D electron gases (2DEGs) remains elusive, although its determination is crucial to understand their remarkable properties. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that there is a highly metallic universal 2DEG at the vacuum-cleaved surface of SrTiO3, independent of bulk carrier densities over more than seven decades, including the undoped insulating material. This 2DEG is confined within a region of ~5 unit cells with a sheet carrier density of ~0.35 electrons per a^2 (a is the cubic lattice parameter). We unveil a remarkable electronic structure consisting on multiple subbands of heavy and light electrons. The similarity of this 2DEG with those reported in SrTiO3-based heterostructures and field-effect transistors suggests that different forms of electron confinement at the surface of SrTiO3 lead to essentially the same 2DEG. Our discovery provides a model system for the study of the electronic structure of 2DEGs in SrTiO3-based devices, and a novel route to generate 2DEGs at surfaces of transition-metal oxides., 28 pages, 9 figures

Previous angle-resolved photoemission spectroscopy experiments in NaxCoO2 reported both a strongly renormalized bandwidth near the Fermi level and moderately renormalized Fermi velocities, leaving it unclear whether the correlations are weak or strong and how they could be quantified. We explain why this situation occurs and solve the problem by extracting clearly the coherent and incoherent parts of the band crossing the Fermi level. We show that one can use their relative weight to estimate self-consistently a quasiparticle weight Z=0.15±0.05. We suggest this method could be a reliable way to study the evolution of correlations in cobaltates and for comparison with other strongly correlated systems. © 2010 The American Physical Society.

We present a detailed investigation of Ba(Fe0.65Ru0.35)2As2 by transport measurements and Angle Resolved photoemission spectroscopy. We observe that Fe and Ru orbitals hybridize to form a coherent electronic structure and that Ru does not induce doping. The number of holes and electrons, deduced from the area of the Fermi Surface pockets, are both about twice larger than in BaFe2As2. The contribution of both carriers to the transport is evidenced by a change of sign of the Hall coefficient with decreasing temperature. Fermi velocities increase significantly with respect to BaFe2As2, suggesting a significant reduction of correlation effects. This may be a key to understand the appearance of superconductivity at the expense of magnetism in undoped iron pnictides.

We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked graphite sample. The origin of multilayer graphene's electronic behavior is its unique highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that causes each sheet to behave like an isolated graphene plane., 13 pages, 16 figures

We present a comprehensive angle-resolved photoemission study of the three-dimensional electronic structure of Ba(Fe1-xCox)2As2. The wide range of dopings covered by this study, x=0 to x=0.3, allows to extract systematic features of the electronic structure. We show that there are three different hole pockets around the G point, the two inner ones being nearly degenerate and rather two dimensional, the outer one presenting a strong three dimensional character. The structure of the electron pockets is clarified by studying high doping contents, where they are enlarged. They are found to be essentially circular and two dimensional. From the size of the pockets, we deduce the number of holes and electrons present at the various dopings. We find that the net number of carriers is in good agreement with the bulk stoichiometry, but that the number of each species (holes and electrons) is smaller than predicted by theory. Finally, we discuss the quality of nesting in the different regions of the phase diagram. The presence of the third hole pocket significantly weakens the nesting at x=0, so that it may not be a crucial ingredient in the formation of the Spin Density Wave. On the other hand, superconductivity seems to be favored by the coexistence of two-dimensional hole and electron pockets of similar sizes.