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Orientation-patterned gallium phosphide (OP-GaP) has been grown heteroepitaxially on OP gallium arsenide (GaAs) templates using hydride vapor phase epitaxy (HVPE). The effect of OP-GaAs template fabrication methods of epitaxial-inversion and wafer bonding on the heteroepitaxial OP-GaP growth has been investigated. OP-GaP layers with a growth rate of up to 35 µm/h and excellent domain fidelity were obtained. The growth rate and the domain fidelity have been revealed/studied by scanning electron microscope (SEM). In addition, we demonstrate that the crystalline quality of the individual domains, namely, the substrate-oriented domains (ODs) and the inverted domains (IDs), can be investigated by high-resolution x-ray diffraction reciprocal space mapping (HRXRDRSM), which can also indicate the domain fidelity. Attempts to increase the growth rate and improve the domain fidelity by increasing the III and V group precursors resulted in either an increase in the growth rate in the OP-GaP layers grown on epitaxial inversion OP-GaAs template at the expense of the domain crystalline quality and fidelity or an improvement in the crystalline quality of the domains at the expense of the growth rate in the OP-GaP layers grown on wafer-bonded OP-GaAs templates. In the case of OP-GaP grown on OP-GaAs templates prepared by epitaxial inversion, the crystalline quality of the ODs is better than that of the IDs, but it shows that the quality of the inverted layer in the template influences the quality and fidelity of the grown domains. To the authors’ knowledge, exploitation of HRXRDRSM studies on OP-GaP to establish the crystalline quality of its individual domains (ODs and IDs) is the first of its kind. OP-ZnSe grown on OP-GaAs templates has also been included in this study to further emphasize the potential of this method. We propose from this study that once the growth rate is optimized from SEM studies, HRXRDRSM analysis alone can be used to assess the structural quality and to infer the domain fidelity of the OP structures.

Heteroepitaxial Zn-doped p-GaP was grown on (001) GaAs, (001) Si and (111) Si substrates by hydride vapor phase epitaxy for solar-driven photoelectrochemical applications of hydrogen generation by water splitting and CO2 reduction. Growth of GaP on Si was realized through the implementation of a low-temperature buffer layer, and the morphology and crystalline quality were enhanced by optimizing the precursor flows and pre-heating ambient substrate. The p-GaP/GaAs and p-GaP/Si samples were processed to photoelectrodes with an amorphous TiO2 coating for CO2 reduction and a combination of TiO2 layer and mesoporous tungsten phosphide catalyst for water splitting. P-GaP/GaAs with suitable Zn-doping concentration exhibited photoelectrochemical performance comparable to homoepitaxial p-GaP/GaP for water splitting and CO2 reduction. Degradation of photocurrent in p-GaP/Si photoelectrodes is observed in PEC water splitting due to the high density of defects arising from heteroepitaxial growth.

Measurements of beam stability for mid-infrared (IR)-emitting quantum cascade lasers (QCLs) are important for applications that require the beam to travel through air to remote targets, such as free-space communication links. We report beam-quality measurement results of narrow-ridge, 4.6 µm-emitting buried-heterostructure (BH) QCLs fabricated using ICP etching and HVPE regrowth. Beam-quality measurements under QCW operation exhibit M2

Scaling the coherent power of mid-infrared (IR)-emitting quantum cascade lasers (QCLs) to the multi-watt range remains an important objective for applications where the laser beam needs to travel through air to remote targets, such as freespace communication links. For such applications requiring long-range pointing accuracy, measurements of beam stability are also important. We present beam-quality measurement results of narrow-ridge (4-5 μm), 4.6 μm-emitting buriedheterostructure (BH) QCLs. A 40-stage, step-tapered active-region (STA) structure was grown by MOCVD, and ICP etching was used to make deep ridges. InP:Fe was preferentially regrown in the field regions by using an SiO2 mask for ridge etching and Hydride Vapor Phase Epitaxy (HVPE). The HVPE process is attractive for selective regrowth, since high growth rates (0.2-0.3 μm/min) can be utilized, and highly planar top surfaces can readily be obtained. HVPE regrowth has been previously employed for BH devices of MBE-grown QCL ridges, but beam-stability measurements were not reported. HR-coated, 7.5 mm-long devices were measured under QCW operation (100 μsec pulse width, 0.5%-10% duty cycle) – very good beam quality factors, M2 < 1.2, were observed for both 4 μm and 5 μm ridge widths, but the narrower ridge exhibited better pointing stability. Collimated 5 μm-wide BH devices displayed some small degree of centroid motion with increasing power (< 0.125 mrad). This corresponds to a targeting error of ~1.25 cm over a distance of 100 m. Significantly improved lateral-beam stability was observed for narrower ridge width, although at the expense of reduced output power.

Heteroepitaxial growth of orientation-patterned GaP on patterned GaAs template was developed by using hydride vapor phase epitaxy for quasi-phase-matching applications. We present the growth with well-defined periodic boundaries between (001) and (00 1) GaP domains. The GaP layer on planar GaAs was characterized by terahertz time-domain spectroscopy and the conductivity of GaP (0.16 S cm−1) was obtained in terahertz range.

Heteroepitaxial growth of orientation‐patterned (OP) GaP (OP‐GaP) on wafer‐bonded OP‐GaAs templates is investigated by low‐pressure hydride vapor phase epitaxy for exploiting the beneficial low two ...

Quasi-phase-matched orientation-patterned GaP (OP-GaP) is an attractive technology for achieving mid-IR and terahertz (THz) radiation enabled by nonlinear frequency conversion, because of its low two-photon absorption (2PA) down to 1 pm. High crystalline quality of OP-GaP template and subsequent thick layer growth is required to exploit the benefit of low 2PA of GaP pumped with short wavelength lasers [1]. In this work, we present the development of heteroepitaxial growth of OP-GaP on wafer fused OP-GaAs template with high growth rate and good domain fidelity. The conductivity of the GaP grown on planar GaAs was investigated in the THz region.