1. High- k perovskite gate oxide for modulation beyond 10 14 cm -2 .
- Author
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Song D, Jeong M, Kim J, Kim B, Kim JH, Kim JH, Lee K, Kim Y, and Char K
- Abstract
Scaling down of semiconductor devices requires high- k dielectric materials to continue lowering the operating voltage of field-effect transistors (FETs) and storing sufficient charge on a smaller area. Here, we investigate the dielectric properties of epitaxial BaHf
0.6 Ti0.4 O3 (BHTO), an alloy of perovskite oxide barium hafnate (BaHfO3 ) and barium titanate (BaTiO3 ). We found the dielectric constant, the breakdown field, and the leakage current to be 150, 5.0 megavolts per centimeter (MV cm-1 ), and 10-4 amperes per square centimeter at 2 MV cm-1 , respectively. The results suggest that two-dimensional (2D) carrier density of more than n2D = 1014 per square centimeter (cm-2 ) could be modulated by the BHTO gate oxide. We demonstrate an n-type accumulation mode FET and direct suppression of more than n2D = 1014 cm-2 via an n-type depletion-mode FET. We attribute the large dielectric constant, high breakdown field, and low leakage current of BHTO to the nanometer scale stoichiometric modulation of hafnium and titanium.- Published
- 2022
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