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In robot vision, it is often desired to measure an area larger than the field of view of the camera, so the camera tends to be mounted on a mechanical pan/tilt platform. However, such mechanisms have a non-negligible response time compared to the frame rate of the camera. In this paper, we describe what we believe to be a new method that allows arbitrary and multiple gaze directions to be observed in a frame-by-frame manner based on a resonant mirror and a lock-in pixel image sensor. In the proposed method, while the gaze direction oscillates due to the resonance mirror, the image sensor makes an exposure of several hundreds of nanoseconds every time the gaze passes through the direction to be captured, and accumulates the captured signals. A prototype system was developed using a lock-in pixel image sensor with four image storage units called taps and a resonant mirror with a resonant frequency of 12 kHz. The system achieved both arbitrary control of the gaze direction in a frame-by-frame manner, and simultaneous capturing of four images with arbitrary gaze directions also in a frame-by-frame manner.

Significance: We present a motion-resistant three-wavelength spatial frequency domain imaging (SFDI) system with ambient light suppression using an 8-tap complementary metal-oxide semiconductor (CMOS) image sensor (CIS) developed at Shizuoka University. The system addresses limitations in conventional SFDI systems, enabling reliable measurements in challenging imaging scenarios that are closer to real-world conditions., Aim: Our study demonstrates a three-wavelength SFDI system based on an 8-tap CIS. We demonstrate and evaluate the system's capability of mitigating motion artifacts and ambient light bias through tissue phantom reflectance experiments and in vivo volar forearm experiments., Approach: We incorporated the Hilbert transform to reduce the required number of projected patterns per wavelength from three to two per spatial frequency. The 8-tap image sensor has eight charge storage diodes per pixel; therefore, simultaneous image acquisition of eight images based on multi-exposure is possible. Taking advantage of this feature, the sensor simultaneously acquires images for planar illumination, sinusoidal pattern projection at three wavelengths, and ambient light. The ambient light bias is eliminated by subtracting the ambient light image from the others. Motion artifacts are suppressed by reducing the exposure and projection time for each pattern while maintaining sufficient signal levels by repeating the exposure. The system is compared to a conventional SFDI system in tissue phantom experiments and then in vivo measurements of human volar forearms., Results: The 8-tap image sensor-based SFDI system achieved an acquisition rate of 9.4 frame sets per second, with three repeated exposures during each accumulation period. The diffuse reflectance maps of three different tissue phantoms using the conventional SFDI system and the 8-tap image sensor-based SFDI system showed good agreement except for high scattering phantoms. For the in vivo volar forearm measurements, our system successfully measured total hemoglobin concentration, tissue oxygen saturation, and reduced scattering coefficient maps of the subject during motion (16.5 cm/s) and under ambient light (28.9 lx), exhibiting fewer motion artifacts compared with the conventional SFDI., Conclusions: We demonstrated the potential for motion-resistant three-wavelength SFDI system with ambient light suppression using an 8-tap CIS., (© 2024 The Authors.)

In this paper, we present a prototype pseudo-direct time-of-flight (ToF) CMOS image sensor, achieving high distance accuracy, precision, and robustness to multipath interference. An indirect ToF (iToF)-based image sensor, which enables high spatial resolution, is used to acquire temporal compressed signals in the charge domain. Whole received light waveforms, like those acquired with conventional direct ToF (dToF) image sensors, can be obtained after image reconstruction based on compressive sensing. Therefore, this method has the advantages of both dToF and iToF depth image sensors, such as high resolution, high accuracy, immunity to multipath interference, and the absence of motion artifacts. Additionally, two approaches to refine the depth resolution are explained: (1) the introduction of a sub-time window; and (2) oversampling in image reconstruction and quadratic fitting in the depth calculation. Experimental results show the separation of two reflections 40 cm apart under multipath interference conditions and a significant improvement in distance precision down to around 1 cm. Point cloud map videos demonstrate the improvements in depth resolution and accuracy. These results suggest that the proposed method could be a promising approach for virtually implementing dToF imaging suitable for challenging environments with multipath interference.

This paper presents a time-of-flight image sensor based on 8-Tap P-N junction demodulator (PND) pixels, which is designed for hybrid-type short-pulse (SP)-based ToF measurements under strong ambient light. The 8-tap demodulator implemented with multiple p-n junctions used for modulating the electric potential to transfer photoelectrons to eight charge-sensing nodes and charge drains has an advantage of high-speed demodulation in large photosensitive areas. The ToF image sensor implemented using 0.11 µm CIS technology, consisting of an 120 (H) × 60 (V) image array of the 8-tap PND pixels, successfully works with eight consecutive time-gating windows with the gating width of 10 ns and demonstrates for the first time that long-range (>10 m) ToF measurements under high ambient light are realized using single-frame signals only, which is essential for motion-artifact-free ToF measurements. This paper also presents an improved depth-adaptive time-gating-number assignment (DATA) technique for extending the depth range while having ambient-light canceling capability and a nonlinearity error correction technique. By applying these techniques to the implemented image sensor chip, hybrid-type single-frame ToF measurements with depth precision of maximally 16.4 cm (1.4% of the maximum range) and the maximum non-linearity error of 0.6% for the full-scale depth range of 1.0-11.5 m and operations under direct-sunlight-level ambient light (80 klux) have been realized. The depth linearity achieved in this work is 2.5 times better than that of the state-of-the-art 4-tap hybrid-type ToF image sensor.

This study was conducted with the aim of developing a circuit system that enables the measurement of the moisture content and ion concentration with a simple circuit configuration. Our previous studies have shown that soil can be represented by an equivalent circuit of a parallel circuit of resistors and capacitors. We designed a circuit that can convert the voltage transient characteristics of the soil when a current is applied to it into a square wave and output frequency information and developed an algorithm to analyze the two types of square waves and calculate R and C. Normal operation was confirmed in the range of 10 kΩ-1 MΩ for the designed circuit, and the calculation algorithm matched within a maximum error of 5%, thus confirming the validity of the program. These successfully confirmed the changes in the water content and ionic concentration. The soil moisture content measurement succeeded in measuring a maximum error of about 10%, except at one point, and the soil ion concentration measurement succeeded in measuring a maximum error of 6.6%. A new, simple, noise-resistant moisture content and ion concentration measurement circuit system with square wave output has been realized.

Multi-path interference causes depth errors in indirect time-of-flight (ToF) cameras. In this paper, resolving multi-path interference caused by surface reflections using a multi-tap macro-pixel computational CMOS image sensor is demonstrated. The imaging area is implemented by an array of macro-pixels composed of four subpixels embodied by a four-tap lateral electric field charge modulator (LEFM). This sensor can simultaneously acquire 16 images for different temporal shutters. This method can reproduce more than 16 images based on compressive sensing with multi-frequency shutters and sub-clock shifting. In simulations, an object was placed 16 m away from the sensor, and the depth of an interference object was varied from 1 to 32 m in 1 m steps. The two reflections were separated in two stages: coarse estimation based on a compressive sensing solver and refinement by a nonlinear search to investigate the potential of our sensor. Relative standard deviation (precision) and relative mean error (accuracy) were evaluated under the influence of photon shot noise. The proposed method was verified using a prototype multi-tap macro-pixel computational CMOS image sensor in single-path and dual-path situations. In the experiment, an acrylic plate was placed 1 m or 2 m and a mirror 9.3 m from the sensor.

An ultra-high-speed computational CMOS image sensor with a burst frame rate of 303 megaframes per second, which is the fastest among the solid-state image sensors, to our knowledge, is demonstrated. This image sensor is compatible with ordinary single-aperture lenses and can operate in dual modes, such as single-event filming mode or multi-exposure imaging mode, by reconfiguring the number of exposure cycles. To realize this frame rate, the charge modulator drivers were adequately designed to suppress the peak driving current taking advantage of the operational constraint of the multi-tap charge modulator. The pixel array is composed of macropixels with 2 × 2 4-tap subpixels. Because temporal compressive sensing is performed in the charge domain without any analog circuit, ultrafast frame rates, small pixel size, low noise, and low power consumption are achieved. In the experiments, single-event imaging of plasma emission in laser processing and multi-exposure transient imaging of light reflections to extend the depth range and to decompose multiple reflections for time-of-flight (TOF) depth imaging with a compression ratio of 8× were demonstrated. Time-resolved images similar to those obtained by the direct-type TOF were reproduced in a single shot, while the charge modulator for the indirect TOF was utilized.

This study aimed to achieve high range precision in the sub-100 µm order with time-of-flight (TOF) range imaging for 3-D scanners. The precision of a TOF range imager was improved using dual reference plane sampling (DRPS). DRPS using two short-pulse lasers reduces driver jitter, which limits the range precision below sub-100 µm. A proof-of-concept measurement system implemented using a TOF range imager demonstrated the reduction in driver jitters, resulting in reduced column-to-column variation in range precision. The developed system also achieved a high precision of 52 µm using a single frame and 27 µm using a 10-frame average.

This paper presents a high-linearity high-resolution time-of-flight (ToF) linear-array digital image sensor using a time-domain negative feedback technique. A coarse ToF measurement loop uses a 5-bit digital-to-time converter (DTC) and a delayed gating-pulse generator for time-domain feedback to find the zero of the difference between ToF and the digital estimate of the gating-pulse delay while maintaining a constant operating point of the analog readout circuits. A fine ToF measurement uses a delta-sigma modulation (DSM) loop using the time-domain feedback with a bit-stream signal form. Because of the self-contained property of the DSM for low distortion and noise exploited by the oversampling signal processing, the proposed technique provides high-linearity and high-range resolution in the fine ToF measurement. A prototype ToF sensor of 16.8 × 16.8 μm 2 two-tap pixels and fabricated in a 0.11 μm (1P4M) CMOS image sensors (CIS) process achieves +0.9%/-0.47% maximum nonlinearity error and a resolution of 0.24 mm (median) for the measurement range of 0-1.05 m. The ToF sensor produces an 11-bit fully digital output with a ToF measurement time of 22.4 ms.

Novel sulfur-doped graphitic carbon nitride quantum dots (S-gCNQDs) are synthesized using a single-source precursor in a one-step solvothermal process. The S-gCNQDs with a size of ~ 5-nm displayed a strong green intrinsic fluorescence at 512 nm when excited at 400 nm, with a quantum yield of ~ 33% in aqueous solution. The prepared S-gCNQDs and Ag 2 S nanocrystals were applied as innovative functional materials to fabricate a biosensor for virus detection based on the conjugation of specific anti-human influenza A monoclonal antibody to the S-gCNQDs and Ag 2 S NCs, respectively. In the presence of the influenza A virus, an interaction between the S-gCNQDs/Ag 2 S-labeled antibody resulted in the formation of a nanosandwich structure, which is accompanied by the fluorescence enhancement of the S-gCNQDs. The change in fluorescence intensity linearly correlats with the concentration of the influenza A virus (H1N1) in the 10 fg/mL to 1.0 ng/mL range, with a limit of detection of 5.5 fg/mL. The assay was applied to the assay of clinically isolated influenza A virus (H3N2/Yokohama) mixed with human serum. The obtained limit of detection was 100 PFU/mL within the detection range of 10 2 - 5 × 10 4 PFU/mL for the H3N2 virus. Graphical abstract.

In this paper, a quasi-simultaneous multi-focus imaging technique named simulfocus imaging is reported. This technique was developed for measuring an entire object distributed in the depth direction beyond the depth of field (DOF) with high resolution in a single shot. Simulfocus imaging can acquire multiple focal planes in one shot by synchronizing a tunable acoustic gradient index (TAG) lens and a lock-in pixel image sensor. The TAG lens is a tunable-focus lens whose focal position can be changed at a high speed of several tens to several hundreds of kilohertz. The lock-in pixel image sensor is a special image sensor that can execute multiple exposures at an arbitrary timing during a single shooting. The sensor includes a number of photoelectron storage units in each pixel, and the units where the photoelectrons generated by each exposure are stored can be freely selected. Since an image can be acquired for a single storage unit, and the lock-in pixel image sensor has a number of storage units, the lock-in pixel image sensor can acquire multiple images in one shot. By assigning a specific exposure timing to each unit and synchronizing the exposure timing with the focus fluctuation of the TAG lens, it is possible to simultaneously acquire images in different focal planes. To evaluate the system, we conducted experiments to show the effectiveness of simulfocus imaging in microscope and telescope configurations. From the experimental results, it was confirmed that simulfocus was effective in both configurations.

An 8-tap CMOS lock-in pixel image sensor that has seven carrier-capturing and a draining time window was developed for short-pulse time-of-flight (TOF) measurements. The proposed pixel for the short-pulse TOF measurements has seven consecutive time-gating windows, each of which has the width of 6 ns, which is advantageous for high-resolution range imaging, particularly for relatively longer distances (>5 m) and under high ambient light operations. In order to enhance the depth resolution, a technique for the depth-adaptive time-gating-number assignment (DATA) for the short-pulse TOF measurement is proposed. A prototype of the 8-tap CMOS lock-in pixel image sensor is implemented with a 1POLY 4METAL 0.11-μm CIS process. The maximum non-linearity error of 1.56%FS for the range of 1-6.4 m and the depth resolution of 6.4 mm was obtained at 6.2 m using the DATA technique., Competing Interests: The authors declare no conflict of interest.

In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region. The proposed SOI-based four-tap charge modulator achieves a high-speed charge modulation and high modulation contrast of 71% in a NIR region. In addition, in-pixel drain function is used for short-pulse TOF measurements. A distance measurement up to 27 m is carried out with +1.8~-3.0% linearity error and range resolution of 4.5 cm in outdoor conditions. The measured QE of 55% is attained at 940 nm which is suitable for outdoor use due to the reduced spectral components of solar radiation., Competing Interests: The authors declare no conflict of interest.

Multi-exposure laser speckle contrast imaging (MELSCI) systems based on high frame rate cameras are suitable for wide-field quantitative measurement of blood flow. However, high-speed camera-based MELSCI requires high power consumption, large memory, and high processing capability, which may lead to relatively large and expensive hardware. To realize a compact and cost-efficient MELSCI system, we discuss an application of the multi-tap CMOS image sensor originally designed for time-of-flight range imaging. This image sensor operated in the global shutter mode and every pixel was provided with multiple charge-storage diodes. Multiple images for different exposures were acquired simultaneously because exposure patterns were programmable to implement an arbitrary exposure duration for each tap. The frame rate was close to video frame rates (30 frames per second (fps)) regardless of the exposure pattern. The feasibility of the proposed method was verified by simulations that were performed with real speckle images captured by a high-speed camera at 40 kfps. Experiments with a four-tap CMOS image sensor demonstrated that a flow speed map was obtained at a moderate frame rate such as 35 fps for a moving ground glass plate and 45 fps for flowing Intralipose, which were linearly moved at speeds of 1-5 mm/s.

In this paper, a wide dynamic range (WDR) CMOS image sensor (CIS) with a charge splitting gate (SG) and two storage diodes (SDs) is presented. By using single-gate on/off control with the SG, photocurrent path to the first (SD1) or second storage diodes (SD2) is switched alternatively and periodically during exposure and signal electrons generated in a photodiode (PD) are transferred to and accumulated in the SD1 or SD2. By setting a large ratio of the off-time to on-time of the SG, two different sensitivity signals, which are originated by the same photodiode, are generated and a WDR image signal is obtained. This technique has a distinct advantage on mitigating the problem of motion artifact in WDR imaging with high and low sensitivity signals and flexible dynamic control of the dynamic range. An experimental WDR CMOS image sensor with 280 (H) × 406 (V)-pixel array consisting of 14 sub-arrays, each of which have 20 (H) × 406 (V) pixels, was implemented and tested. For the SG on/off-time ratio of 30 and 279, the DR of 93 dB and 104 dB, respectively, was demonstrated. The effect of the proposed WDR imaging operation on the reduced motion artifact was experimentally confirmed., Competing Interests: The authors declare no conflict of interest.

Widefield frequency-domain fluorescence lifetime imaging microscopy (FD-FLIM) measures the fluorescence lifetime of entire images in a fast and efficient manner. We report a widefield FD-FLIM system based on a complementary metal-oxide semiconductor camera equipped with two-tap true correlated double sampling lock-in pixels and lateral electric field charge modulators. Owing to the fast intrinsic response and modulation of the camera, our system allows parallel multifrequency FLIM in one measurement via fast Fourier transform. We demonstrate that at a fundamental frequency of 20 MHz, 31-harmonics can be measured with 64 phase images per laser repetition period. As a proof of principle, we analyzed cells transfected with Cerulean and with a construct of Cerulean-Venus that shows Förster Resonance Energy Transfer at different modulation frequencies. We also tracked the temperature change of living cells via the fluorescence lifetime of Rhodamine B at different frequencies. These results indicate that our widefield multifrequency FD-FLIM system is a valuable tool in the biomedical field., (© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

We demonstrate the multiband color filtering of a standard RGB color and a complementary CMY color by a plasmonic color filter, composed of concentric corrugated metallic thin film rings. The surface plasmon resonance is excited by the periodic corrugation, and the coupled light is transmitted through the central subwavelength aperture. Color selectivity is achieved not only in the visible but also in the near-infrared (NIR) region. Therefore, simultaneous imaging with visible and NIR can be realized by the integration of plasmonic color filters with sensors. We investigate the angle of incidence dependence of the transmission color selectivity and the color purity of the fabricated plasmonic color filter array.

We propose a plasmonic color filter consisting of a single aperture surrounded by concentric periodic corrugations for simultaneous imaging of a spectral range from the visible to the near-infrared. The incident light coupled with surface plasmons propagates through the sub-wavelength aperture as beaming light. The beaming light transmission is able to suppress the spatial color cross-talk between the pixels in an image sensor. We analyzed the transmission characteristics of a plasmonic color filter with periodic corrugations in a silver thin film by using the finite-difference time-domain algorithm. We demonstrated a multi-band transmission wavelength selectivity, of about 100 nm, for the spectral bandwidth ranging from visible to near-infrared. The simultaneous discrimination of visible and near-infrared light with a high color purity by the plasmonic color filter achieves both improved image recognition and smaller system-size compared with conventional systems, which is particularly important for applications such as vehicle-mounted cameras, security, and biological tissue engineering.

In this paper, we report on the development of a monolithic active pixel sensor for X-ray imaging using 0.2 µm fully depleted silicon-on-insulator (SOI)-based technology to support next generation astronomical satellite missions. Detail regarding low-noise dual-gain SOI based pixels with a charge sensitive amplifier and pinned depleted diode sensor structure is presented. The proposed multi-well sensor structure underneath the fully-depleted SOI allows the design of a detector with low node capacitance and high charge collection efficiency. Configurations for achieving very high charge-to-voltage conversion gain of 52 µV/e - and 187 µV/e - are demonstrated. Furthermore, in-pixel dual gain selection is used for low-noise and wide dynamic range X-ray energy detection. A technique to improve the noise performance by removing correlated system noise leads to an improvement in the spectroscopic performance of the measured X-ray energy. Taken together, the implemented chip has low dark current (44.8 pA/cm² at -30 °C), improved noise performance (8.5 e - rms for high gain and 11.7 e - rms for low gain), and better energy resolution of 2.89% (171 eV FWHM) at 5.9 keV using 55 Fe and 1.67% (234 eV FWHM) at 13.95 keV using 241 Am.

A probabilistic method to remove the random telegraph signal (RTS) noise and to increase the signal level is proposed, and was verified by simulation based on measured real sensor noise. Although semi-photon-counting-level (SPCL) ultra-low noise complementary-metal-oxide-semiconductor (CMOS) image sensors (CISs) with high conversion gain pixels have emerged, they still suffer from huge RTS noise, which is inherent to the CISs. The proposed method utilizes a multi-aperture (MA) camera that is composed of multiple sets of an SPCL CIS and a moderately fast and compact imaging lens to emulate a very fast single lens. Due to the redundancy of the MA camera, the RTS noise is removed by the maximum likelihood estimation where noise characteristics are modeled by the probability density distribution. In the proposed method, the photon shot noise is also relatively reduced because of the averaging effect, where the pixel values of all the multiple apertures are considered. An extremely low-light condition that the maximum number of electrons per aperture was the only 2 e - was simulated. PSNRs of a test image for simple averaging, selective averaging (our previous method), and the proposed method were 11.92 dB, 11.61 dB, and 13.14 dB, respectively. The selective averaging, which can remove RTS noise, was worse than the simple averaging because it ignores the pixels with RTS noise and photon shot noise was less improved. The simulation results showed that the proposed method provided the best noise reduction performance., Competing Interests: The authors declare no conflict of interest.

The photometric stereo method enables estimation of surface normals from images that have been captured using different but known lighting directions. The classical photometric stereo method requires at least three images to determine the normals in a given scene. However, this method cannot be applied to dynamic scenes because it is assumed that the scene remains static while the required images are captured. In this work, we present a dynamic photometric stereo method for estimation of the surface normals in a dynamic scene. We use a multi-tap complementary metal-oxide-semiconductor (CMOS) image sensor to capture the input images required for the proposed photometric stereo method. This image sensor can divide the electrons from the photodiode from a single pixel into the different taps of the exposures and can thus capture multiple images under different lighting conditions with almost identical timing. We implemented a camera lighting system and created a software application to enable estimation of the normal map in real time. We also evaluated the accuracy of the estimated surface normals and demonstrated that our proposed method can estimate the surface normals of dynamic scenes., Competing Interests: The authors declare no conflict of interest.

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO₂ interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e - rms , low dark current density of 56 pA/cm² at -35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV., Competing Interests: The authors declare no conflict of interest.

A large full well capacity (FWC) for wide signal detection range and low temporal random noise for high sensitivity lock-in pixel CMOS image sensor (CIS) embedded with two in-pixel storage diodes (SDs) has been developed and presented in this paper. For fast charge transfer from photodiode to SDs, a lateral electric field charge modulator (LEFM) is used for the developed lock-in pixel. As a result, the time-resolved CIS achieves a very large SD-FWC of approximately 7ke-, low temporal random noise of 1.2e-rms at 20 fps with true correlated double sampling operation and fast intrinsic response less than 500 ps at 635 nm. The proposed imager has an effective pixel array of and a pixel size of . The sensor chip is fabricated by Dongbu HiTek 1P4M 0.11 CIS process.

Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS) image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM) employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system.

Ultrasensitive, rapid and selective diagnostic probes are urgently needed to overcome the limitations of traditional probes for norovirus (NV). Here, we report the detection of NV genogroup II via nucleic acid hybridization technology using a quantum dot (QD)-conjugated molecular beacon (MB) probe. To boost the sensitivity of the MB assay system, an ultrasensitive QD fluorophore with unique optical properties was synthesized, characterized and exploited as a fluorescence signal generator. Alloyed thioglycolic (TGA)-capped CdZnSeS QDs with a high photoluminescence (PL) quantum yield (QY) value of 92% were synthesized, and a modified silanization method was employed to encapsulate the thiol-capped QDs in a silica layer. The resulting highly luminescent alloyed SiO2-coated CdZnSeS QDs had a remarkable PL QY value of 98%. Transmission electron microscopy and dynamic light scattering confirmed the monodispersity of the alloyed nanocrystals, and zeta potential analysis confirmed their colloidal stability. Powder X-ray diffraction and PL lifetime measurements confirmed the surface modification of the QDs. The alloyed TGA-capped and SiO2-coated CdZnSeS QD-conjugated MB bioprobes detected extremely low concentrations of NV RNA. Ultrasensitive detection of low concentrations of NV RNA with a limit of detection (LOD) of 8.2copies/mL in human serum and a LOD of 9.3 copies/mL in buffer was achieved using the SiO2-coated CdZnSeS QD-MB probes, an increase in sensitivity of 3-fold compared with the detection limit for NV RNA using TGA-capped CdZnSeS QD-MBs. The additional merits of our detection system are rapidity, specificity and improved sensitivity over conventional molecular test probes., (Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.)

This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology for high-gain column readout circuits in low-noise CMOS image sensors (CISs). This paper reveals how the column CMS circuits, together with a pixel having a high-conversion-gain charge detector and low-noise transistor, realizes deep sub-electron read noise levels based on the analysis of noise components in the signal readout chain from a pixel to the column analog-to-digital converter (ADC). The noise measurement results of experimental CISs are compared with the noise analysis and the effect of noise reduction to the sampling number is discussed at the deep sub-electron level. Images taken with three CMS gains of two, 16, and 128 show distinct advantage of image contrast for the gain of 128 (noise(median): 0.29 e - rms ) when compared with the CMS gain of two (2.4 e - rms ), or 16 (1.1 e - rms )., Competing Interests: The authors declare no conflict of interest.

A Delay-Locked Loop (DLL) with a modified charge pump circuit is proposed for generating high-resolution linear delay steps with sub-picosecond jitter performance and adjustable delay range. The small-signal model of the modified charge pump circuit is analyzed to bring forth the relationship between the DLL's internal control voltage and output time delay. Circuit post-layout simulation shows that a 0.97 ps delay step within a 69 ps delay range with 0.26 ps Root-Mean Square (RMS) jitter performance is achievable using a standard 0.13 µm Complementary Metal-Oxide Semiconductor (CMOS) process. The post-layout simulation results show that the power consumption of the proposed DLL architecture's circuit is 0.1 mW when the DLL is operated at 2 GHz., Competing Interests: The authors declare no conflict of interest.

A complementary metal-oxide semiconductor (CMOS) lock-in pixel to observe stimulated Raman scattering (SRS) using a high speed lateral electric field modulator (LEFM) for photo-generated charges and in-pixel readout circuits is presented. An effective SRS signal generated after the SRS process is very small and needs to be extracted from an extremely large offset due to a probing laser signal. In order to suppress the offset components while amplifying high-frequency modulated small SRS signal components, the lock-in pixel uses a high-speed LEFM for demodulating the SRS signal, resistor-capacitor low-pass filter (RC-LPF) and switched-capacitor (SC) integrator with a fully CMOS differential amplifier. AC (modulated) components remained in the RC-LPF outputs are eliminated by the phase-adjusted sampling with the SC integrator and the demodulated DC (unmodulated) components due to the SRS signal are integrated over many samples in the SC integrator. In order to suppress further the residual offset and the low frequency noise (1/f noise) components, a double modulation technique is introduced in the SRS signal measurements, where the phase of high-frequency modulated laser beam before irradiation of a specimen is modulated at an intermediate frequency and the demodulation is done at the lock-in pixel output. A prototype chip for characterizing the SRS lock-in pixel is implemented and a successful operation is demonstrated. The reduction effects of residual offset and 1/f noise components are confirmed by the measurements. A ratio of the detected small SRS to offset a signal of less than 10(-)⁵ is experimentally demonstrated, and the SRS spectrum of a Benzonitrile sample is successfully observed.

A review on CMOS delay lines with a focus on the most frequently used techniques for high-resolution delay step is presented. The primary types, specifications, delay circuits, and operating principles are presented. The delay circuits reported in this paper are used for delaying digital inputs and clock signals. The most common analog and digitally-controlled delay elements topologies are presented, focusing on the main delay-tuning strategies. IC variables, namely, process, supply voltage, temperature, and noise sources that affect delay resolution through timing jitter are discussed. The design specifications of these delay elements are also discussed and compared for the common delay line circuits. As a result, the main findings of this paper are highlighting and discussing the followings: the most efficient high-resolution delay line techniques, the trade-off challenge found between CMOS delay lines designed using either analog or digitally-controlled delay elements, the trade-off challenge between delay resolution and delay range and the proposed solutions for this challenge, and how CMOS technology scaling can affect the performance of CMOS delay lines. Moreover, the current trends and efforts used in order to generate output delayed signal with low jitter in the sub-picosecond range are presented.

Controlling and engineering the particle composition of semiconductor alloys is one of the topmost targets in the field of semiconductor materials science and technology. Quantum dot (QD) nanocrystals offer an unmatched opportunity to obtain a wide range of composition-controlled alloys and have captivated a great deal of interest recently. Herein, we report on band gap engineering via tuning and controlling the sulphur molar fraction (ternary shell layer) of quaternary/ternary core/shell alloyed CdZnSeS/ZnSeS QDs. Varying optical properties were exhibited by the alloyed QDs but a uniform particle size distribution was maintained across all the compositions. The alloyed QDs displayed bright emission colours under UV irradiation, whereas the photoluminescence quantum yields (PL QY) were in a remarkable range of 36-98%. Non-linearity of the lattice parameter was an indication of gradient alloying of the nanocrystals, whereas the kinetics of the optical properties unravelled the effect of intrinsic optical bowing. Displacement of bond length and anion mismatch influenced the optical properties of the QDs with respect to the variation in the PL QY. Alloyed CdZnSeS/ZnSe 1.0 S 1.3 QDs with a spectacular PL QY were exploited as an ultrasensitive fluorescence reporter in a conjugated molecular beacon (MB) assay to detect influenza virus H1N1 RNA. Our detection system was rapid and highly sensitive for detecting extremely low concentrations of H1N1 RNA (down to 2 copies per mL), specific and versatile (detects H1N1 RNA in human serum). For proof of concept, the alloyed CdZnSeS/ZnSe 1.0 S 1.3 QD-MB bioprobe exhibited a superior 12-fold sensitivity over an alloyed CdZnSeS-MB probe, while a conventional CdSe/ZnS-MB probe could not detect extremely low concentrations of influenza virus H1N1 RNA.

In the work described in this paper, an image reproduction scheme with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor was demonstrated. The sensor captures an object by compressing a sequence of images with focal-plane temporally random-coded shutters, followed by reconstruction of time-resolved images. Because signals are modulated pixel-by-pixel during capturing, the maximum frame rate is defined only by the charge transfer speed and can thus be higher than those of conventional ultra-high-speed cameras. The frame rate and optical efficiency of the multi-aperture scheme are discussed. To demonstrate the proposed imaging method, a 5×3 multi-aperture image sensor was fabricated. The average rising and falling times of the shutters were 1.53 ns and 1.69 ns, respectively. The maximum skew among the shutters was 3 ns. The sensor observed plasma emission by compressing it to 15 frames, and a series of 32 images at 200 Mfps was reconstructed. In the experiment, by correcting disparities and considering temporal pixel responses, artifacts in the reconstructed images were reduced. An improvement in PSNR from 25.8 dB to 30.8 dB was confirmed in simulations.

Background: It is important to devise efficient and easy methods of detecting colorectal tumours to reduce mortality from colorectal cancer. Dual-wavelength excitation autofluorescence intensity can be used to visualize colorectal tumours. Therefore, we evaluated dual-wavelength excitation autofluorescence images of colorectal tumours obtained with a newly developed, high-sensitivity complementary metal-oxide-semiconductor (CMOS) imager., Methods: A total 107 colorectal tumours (44 adenomas, 43 adenocarcinomas with intramucosal invasion, and 20 sessile serrated adenoma/polyps [SSA/Ps]) in 98 patients who underwent endoscopic tumour resection were included. The specimens were irradiated with excitation light at 365 nm and 405 nm, and autofluorescence images measured with a 475 ± 25-nm band pass filter were obtained using a new, high-sensitivity CMOS imager. Ratio images (F365ex/F405ex) were created to evaluate the lesion brightness compared with that of normal mucosa, and specimens were categorized into a no signal or high signal group., Results: Adenomas and adenocarcinomas were depicted in 87 ratio images, with 86.2% (n = 75) in the High signal group. SSA/P was depicted in 20 ratio images, with 70.0% (n = 14) in the High signal group., Conclusions: Dual-wavelength excitation autofluorescence images of colorectal tumours can be acquired using our high-sensitivity CMOS imager, and are useful in detecting colorectal tumours.

This paper presents an indirect time-of-flight (TOF) measurement technique with an impulse photocurrent response of a lock-in pixel. By using a short-pulse laser, the generated photocurrent can be presumed to be an impulse response. This facilitates the utilization of the full high-speed performance of the photodetector and gives high range resolution. As a proof-of-concept, a test chip with a lock-in pixel based on draining-only modulation was implemented using 0.11 μm CMOS image-sensor technology. The test chip achieved a range resolution of 0.29 mm in a 50-mm measurable range, which corresponds to a time resolution of 1.9 ps and the successful acquisition of a 3-mm example step.

In extremely low-light conditions, random telegraph signal (RTS) noise and dark current white defects become visible. In this paper, a multi-aperture imaging system and selective averaging method which removes the RTS noise and the dark current white defects by minimizing the synthetic sensor noise at every pixel is proposed. In the multi-aperture imaging system, a very small synthetic F-number which is much smaller than 1.0 is achieved by increasing optical gain with multiple lenses. It is verified by simulation that the effective noise normalized by optical gain in the peak of noise histogram is reduced from 1.38e⁻ to 0.48 e⁻ in a 3 × 3-aperture system using low-noise CMOS image sensors based on folding-integration and cyclic column ADCs. In the experiment, a prototype 3 × 3-aperture camera, where each aperture has 200 × 200 pixels and an imaging lens with a focal length of 3.0 mm and F-number of 3.0, is developed. Under a low-light condition, in which the maximum average signal is 11e⁻ per aperture, the RTS and dark current white defects are removed and the peak signal-to-noise ratio (PSNR) of the image is increased by 6.3 dB.

Multi-beam confocal microscopy without any physical pinhole was demonstrated. As a key device, a custom CMOS image sensor realizing a focal-plane pinhole array effect by special pixel addressing and discarding of the unwanted photocarriers was developed. The axial resolution in the confocal mode measured by FWHM for a planar mirror was 8.9 μm, which showed that the confocality has been achieved with the proposed CMOS image sensor.

A CMOS light pulse receiver (LPR) cell for spatial optical communications is designed and evaluated by device simulations and a prototype chip implementation. The LPR cell consists of a pinned photodiode and four transistors. It works under sub-threshold region of a MOS transistor and the source terminal voltage which responds to the logarithm of the photo current are read out with a source follower circuit. For finding the position of the light spot on the focal plane, an image pixel array is embedded on the same plane of the LPR cell array. A prototype chip with 640 × 240 image pixels and 640 × 240 LPR cells is implemented with 0.18 μm CMOS technology. A proposed model of the transient response of the LPR cell agrees with the result of the device simulations and measurements. Both imaging at 60 fps and optical communication at the carrier frequency of 1 MHz are successfully performed. The measured signal amplitude and the calculation results of photocurrents show that the spatial optical communication up to 100 m is feasible using a 10 × 10 LED array.

For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors. This paper presents column-parallel high-gain signal readout circuits, correlated multiple sampling (CMS) circuits and their noise reduction effects. In the CMS, the gain of the noise cancelling is controlled by the number of samplings. It has a similar effect to that of an amplified CDS for the thermal noise but is a little more effective for 1/f and RTS noises. Two types of the CMS with simple integration and folding integration are proposed. In the folding integration, the output signal swing is suppressed by a negative feedback using a comparator and one-bit D-to-A converter. The CMS circuit using the folding integration technique allows to realize a very low-noise level while maintaining a wide dynamic range. The noise reduction effects of their circuits have been investigated with a noise analysis and an implementation of a 1Mpixel pinned photodiode CMOS image sensor. Using 16 samplings, dynamic range of 59.4 dB and noise level of 1.9 e(-) for the simple integration CMS and 75 dB and 2.2 e(-) for the folding integration CMS, respectively, are obtained.

The partial charge transfer technique can expand the dynamic range of a CMOS image sensor by synthesizing two types of signal, namely the long and short accumulation time signals. However the short accumulation time signal obtained from partial transfer operation suffers of non-linearity with respect to the incident light. In this paper, an analysis of the non-linearity in partial charge transfer technique has been carried, and the relationship between dynamic range and the non-linearity is studied. The results show that the non-linearity is caused by two factors, namely the current diffusion, which has an exponential relation with the potential barrier, and the initial condition of photodiodes in which it shows that the error in the high illumination region increases as the ratio of the long to the short accumulation time raises. Moreover, the increment of the saturation level of photodiodes also increases the error in the high illumination region.

A dynamic range expansion technique for CMOS image sensors with dual charge storage in a pixel and multiple sampling technique is presented. Each pixel contains a photodiode and a storage diode which is connected to the photodiode via a separation gate. The sensitivity of the signal charge in the storage diode can be controlled either by a separation gate which limits the charge to flow into the storage diode or by controlling the accumulation time in the storage diode. The operation of the sensitivity control with separation gate techniques is simulated and it is found that a blocking layer to the storage diode plays an important role for high controllability of sensitivity of the storage diode. A prototype chip for testing multiple short time accumulations is fabricated and measured.