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Electron transfer at a donor-acceptor quantum dot-metal oxide interface is a process fundamentally relevant to solar energy conversion architectures as, e.g., sensitized solar cells and solar fuels schemes. As kinetic competition at these technologically relevant interfaces largely determines device performance, this Review surveys several aspects linking electron transfer dynamics and device efficiency; this correlation is done for systems aiming for efficiencies up to and above the ∼33% efficiency limit set by Shockley and Queisser for single gap devices. Furthermore, we critically comment on common pitfalls associated with the interpretation of kinetic data obtained from current methodologies and experimental approaches, and finally, we highlight works that, to our judgment, have contributed to a better understanding of the fundamentals governing electron transfer at quantum dot-metal oxide interfaces., Competing Interests: The authors declare no competing financial interest., (© 2022 The Authors. Published by American Chemical Society.)

Two-dimensional conjugated covalent organic frameworks (2D c -COFs) are emerging as a unique class of semiconducting 2D conjugated polymers for (opto)electronics and energy storage. Doping is one of the common, reliable strategies to control the charge carrier transport properties, but the precise mechanism underlying COF doping has remained largely unexplored. Here we demonstrate molecular iodine doping of a metal-phthalocyanine-based pyrazine-linked 2D c -COF. The resultant 2D c -COF ZnPc-pz-I 2 maintains its structural integrity and displays enhanced conductivity by 3 orders of magnitude, which is the result of elevated carrier concentrations. Remarkably, Hall effect measurements reveal enhanced carrier mobility reaching ∼22 cm 2 V -1 s -1 for ZnPc-pz-I 2 , which represents a record value for 2D c -COFs in both the direct-current and alternating-current limits. This unique transport phenomenon with largely increased mobility upon doping can be traced to increased scattering time for free charge carriers, indicating that scattering mechanisms limiting the mobility are mitigated by doping. Our work provides a guideline on how to assess doping effects in COFs and highlights the potential of 2D c -COFs to display high conductivities and mobilities toward novel (opto)electronic devices.

Single-layer and multi-layer 2D polyimine films have been achieved through interfacial synthesis methods. However, it remains a great challenge to achieve the maximum degree of crystallinity in the 2D polyimines, which largely limits the long-range transport properties. Here we employ a surfactant-monolayer-assisted interfacial synthesis (SMAIS) method for the successful preparation of porphyrin and triazine containing polyimine-based 2D polymer (PI-2DP) films with square and hexagonal lattices, respectively. The synthetic PI-2DP films are featured with polycrystalline multilayers with tunable thickness from 6 to 200 nm and large crystalline domains (100-150 nm in size). Intrigued by high crystallinity and the presence of electroactive porphyrin moieties, the optoelectronic properties of PI-2DP are investigated by time-resolved terahertz spectroscopy. Typically, the porphyrin-based PI-2DP 1 film exhibits a p-type semiconductor behavior with a band gap of 1.38 eV and hole mobility as high as 0.01 cm 2  V -1  s -1 , superior to the previously reported polyimine based materials., (© 2020 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.)

The bandgap of CuIn 1- x Ga x Se 2 (CIGS) chalcopyrite semiconductors can be tuned between ≈1.0 and ≈1.7 eV for Ga contents ranging between x = 0 and x = 1. While an optimum bandgap of 1.34 eV is desirable for achieving maximum solar energy conversion in solar cells, state-of-the-art CIGS-based devices experience a drop in efficiency for Ga contents x > 0.3 (i.e., for bandgaps >1.2 eV), an aspect that is limiting the full potential of these devices. The mechanism underlying the limited performance as a function of CIGS composition has remained elusive: both surface and bulk recombination effects are proposed. Here, the disentanglement between surface and bulk effects in CIGS absorbers as a function of Ga content is achieved by comparing photogenerated charge carrier dynamics in air/CIGS and surface-passivated ZnO/CdS/CIGS samples. While surface passivation prevents surface recombination of charge carriers for low Ga content (x < 0.3; up to 1.2 eV bandgap), surface recombination dominates for higher-bandgap materials. The results thus demonstrate that surface, rather than bulk effects, is responsible for the drop in efficiency for Ga contents larger than x ≈ 0.3., (© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

π-Conjugated two-dimensional covalent organic frameworks (2D COFs) are emerging as a novel class of electroactive materials for (opto)electronic and chemiresistive sensing applications. However, understanding the intricate interplay between chemistry, structure, and conductivity in π-conjugated 2D COFs remains elusive. Here, we report a detailed characterization for the electronic properties of two novel samples consisting of Zn- and Cu-phthalocyanine-based pyrazine-linked 2D COFs. These 2D COFs are synthesized by condensation of metal-phthalocyanine (M = Zn and Cu) and pyrene derivatives. The obtained polycrystalline-layered COFs are p-type semiconductors both with a band gap of ∼1.2 eV. A record device-relevant mobility up to ∼5 cm 2 /(V s) is resolved in the dc limit, which represents a lower threshold induced by charge carrier localization at crystalline grain boundaries. Hall effect measurements (dc limit) and terahertz (THz) spectroscopy (ac limit) in combination with density functional theory (DFT) calculations demonstrate that varying metal center from Cu to Zn in the phthalocyanine moiety has a negligible effect in the conductivity (∼5 × 10 -7 S/cm), charge carrier density (∼10 12 cm -3 ), charge carrier scattering rate (∼3 × 10 13 s -1 ), and effective mass (∼2.3 m 0 ) of majority carriers (holes). Notably, charge carrier transport is found to be anisotropic, with hole mobilities being practically null in-plane and finite out-of-plane for these 2D COFs.

The realization of ferromagnetism in semiconductors is an attractive avenue for the development of spintronic applications. Here, we report a semiconducting layered metal-organic framework (MOF), namely K 3 Fe 2 [(2,3,9,10,16,17,23,24-octahydroxy phthalocyaninato)Fe] (K 3 Fe 2 [PcFe-O 8 ]) with spontaneous magnetization. This layered MOF features in-plane full π-d conjugation and exhibits semiconducting behavior with a room temperature carrier mobility of 15 ± 2 cm 2  V -1  s -1 as determined by time-resolved Terahertz spectroscopy. Magnetization experiments and 57 Fe Mössbauer spectroscopy demonstrate the presence of long-range magnetic correlations in K 3 Fe 2 [PcFe-O 8 ] arising from the magnetic coupling between iron centers via delocalized π electrons. The sample exhibits superparamagnetic features due to a distribution of crystal size and possesses magnetic hysteresis up to 350 K. Our work sets the stage for the development of spintronic materials exploiting magnetic MOF semiconductors.

Metal-organic frameworks (MOFs) are hybrid materials based on crystalline coordination polymers that consist of metal ions connected by organic ligands. In addition to the traditional applications in gas storage and separation or catalysis, the long-range crystalline order in MOFs, as well as the tunable coupling between the organic and inorganic constituents, has led to the recent development of electrically conductive MOFs as a new generation of electronic materials. However, to date, the nature of charge transport in the MOFs has remained elusive. Here we demonstrate, using high-frequency terahertz photoconductivity and Hall effect measurements, Drude-type band-like transport in a semiconducting, π-d conjugated porous Fe 3 (THT) 2 (NH 4 ) 3 (THT, 2,3,6,7,10,11-triphenylenehexathiol) two-dimensional MOF, with a room-temperature mobility up to ~ 220 cm 2  V -1 s -1 . The temperature-dependent conductivity reveals that this mobility represents a lower limit for the material, as mobility is limited by impurity scattering. These results illustrate the potential for high-mobility semiconducting MOFs as active materials in thin-film optoelectronic devices.