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2 results on '"Zhiming M. Wang"'

1. Tuning emission profiles of various self-assembled [In.sub.x][Ga.sub.1-x]As nanostructures by rapid thermal annealing

Author

Lee, Jihoon H., Zhiming M. Wang, Dorogan, Vitaliy G., Mazur, Yuiry I., Ware, Morgan E., and Salamo, Gregory J.

Subjects
Gallium arsenide -- Electric properties, Gallium arsenide -- Optical properties, Indium -- Electric properties, Indium -- Optical properties, Photoluminescence -- Measurement, Quantum electrodynamics -- Analysis, Physics
Abstract

Postgrowth rapid thermal annealing is used for tuning the emission profiles of various [In.sub.x][Ga.sub.1-x]As nanostructures, such as quantum dots, quantum dot pairs (QDPs), bridged QDPs, dimpled quantum dots (QDs), and low-temperature-capped QDs. The enhanced optical properties are because of the interchange of In and Ga atoms induced by both defect-assisted intermixing and strain-assisted intermixing.

Published
2009

2. Strain-induced electronic energy changes in multilayered InGaAs/GaAs quantum wire structures

Author

Zhixun Ma, Holden, Todd, Zhiming M. Wang, Salamo, Gregory J., Malikova, Lyudmila, and Mao, Samuel S.

Subjects
Quantum theory -- Analysis, Thin films, Multilayered -- Atomic properties, Gallium compounds -- Atomic properties, Gallium compounds -- Structure, Physics
Abstract

Electroreflectance and surface photovoltage spectroscopy are used to investigate electronic states of layered InGaAs/GaAs(001) quantum wire and quantum dot chain structures. The results have shown that the strain relaxation in the direction perpendicular to the wires or the dot chains have a stronger effect on the heavy-hole-light-hole splitting than on band-gap modification in the InGaAs wires and dot chains.

Published
2007

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