Strain-induced electronic energy changes in multilayered InGaAs/GaAs quantum wire structures

Electroreflectance and surface photovoltage spectroscopy are used to investigate electronic states of layered InGaAs/GaAs(001) quantum wire and quantum dot chain structures. The results have shown that the strain relaxation in the direction perpendicular to the wires or the dot chains have a stronger effect on the heavy-hole-light-hole splitting than on band-gap modification in the InGaAs wires and dot chains.