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1. Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

Author

Jae-Sung Rieh, Greenberg, David, Qizhi Liu, Joseph, Alvin J., Freeman, Greg, and Ahlgren, David C.

Subjects
Bipolar transistors -- Design and construction, Circuit design -- Analysis, Circuit designer, Integrated circuit design, Business, Electronics, Electronics and electrical industries
Abstract

SiGe heterojunction bipolar transistors (HBT) structures are optimized for achieving simultaneous improvements in thermal and electrical performance. The results shed light on the possibility of optimizing SiGe HBTs for improvements in both thermal and electrical performances.

Published
2005

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