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Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances
- Source :
- IEEE Transactions on Electron Devices. Dec, 2005, Vol. 52 Issue 12, p2744, 9 p.
- Publication Year :
- 2005
-
Abstract
- SiGe heterojunction bipolar transistors (HBT) structures are optimized for achieving simultaneous improvements in thermal and electrical performance. The results shed light on the possibility of optimizing SiGe HBTs for improvements in both thermal and electrical performances.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 52
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.143050499