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1. Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: experimental and modeling analysis

Author

Dupuis, N., Decobert, J., Lagree, P.-Y., Lagay, N., Poingt, F., Kazmierski, C., Ramdane, A., and Ougazzaden, A.

Subjects
Aluminum compounds -- Chemical properties, Aluminum compounds -- Optical properties, Gallium -- Chemical properties, Gallium -- Optical properties, Indium -- Chemical properties, Indium -- Optical properties, Arsenic -- Chemical properties, Arsenic -- Optical properties, Photoluminescence -- Analysis, Physics
Abstract

Selective area growth modeling of the AlGaInAs material system is analyzed. High-resolution micro-photoluminescence and optical interferometer microscopy measurements have validated the simulated band gap and thickness variations for both bulk and multi-quantum well layers.

Published
2008

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