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A triple channel Camel high electron mobility transistor (HEMT) structure is developed and compared with conventional double channel (DC) HEMTs. It is shown that the Camel HEMT features a supply layer positioned between two high mobility InGaAs channels which leads to low gate leakage current due to tunneling, increased breakdown voltage compared to DC-HEMTs and higher dynamic performance due to the Camel HEMTs excellent output conductance. The Camel HEMT also provides high current density and static and dynamic characteristics with smooth variations.

A study was conducted, using transmission electron microscopy (TEM), to investigate the InP/InGaAs and InGaAs/InP interfaces in heterostructures grown by metalorganic vapor-phase epitaxy (MOVPE). The result indicates that MOVPE grown InGaAs/InP interfaces can be improved by using very low hydride flow during the switching sequence.