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1. Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier

Author

Yi Zhou, Dake Wang, Ahyi, Claude, Chin-Che Tin, Williams, John, Park, Minseo, Williams, N. Mark, Hanser, Andrew, and Preble, Edward A.

Subjects
Gallium nitrate -- Thermal properties, Gallium nitrate -- Electric properties, Diodes, Schottky-barrier -- Research, Physics
Abstract

The Schottky rectifiers with a Si[O.sub.2] field plate on a freestanding [n.sup.-] gallium nitride (GaN) substrate are fabricated and the analysis of its temperature-dependent electrical features in the temperature range of 298 to 473 K is done. The device simplified the fabrication process and demonstrated excellent forward current conduction and reverse breakdown voltage.

Published
2007

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