Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier

The Schottky rectifiers with a Si[O.sub.2] field plate on a freestanding [n.sup.-] gallium nitride (GaN) substrate are fabricated and the analysis of its temperature-dependent electrical features in the temperature range of 298 to 473 K is done. The device simplified the fabrication process and demonstrated excellent forward current conduction and reverse breakdown voltage.