Search

This study concentrates on the CO2 capture ability of 2D MoSe2 monolayer by first principle calculations. CO2 capture is important to study the reduction of CO2 to hydrogen (green fuel). In this study, at first, the capture of CO2 is expressed in terms of adsorption energy (Eads) and its variation by applying an external electric field is analysed. The adsorption energy is first decreased and then increased with the increase of the electric field from −2 to +2 eV / Å. Secondly, the impact of the electric field on the dipole moment is observed. Interestingly, the magnitude of the dipole moment shifts from negative to 0 and further to positive (a.u.) by the application of the external electric field from −2 to +2 eV / Å. Also, the applied electric field shows a significant impact on the charge capacity of the CO2-adsorbed MoSe2 monolayer. Later, the enhanced electronic conductivity is in alignment with the shift from semiconducting to metallic nature. Lastly, the de-capture property of MoSe2 monolayer towards CO2 gas molecule is estimated using recovery time (τ). Here, the external electric field eases the de-capture of CO2 gas molecules with minimum time for 2 eV / Å and stiffer for 0 eV / Å electric field relatively. [ABSTRACT FROM AUTHOR]

A compact semi-hexagonal-shaped MIMO antenna loaded with a planar SRR (split-ring resonator) structure is presented for Terahertz applications. The single radiating element consists of a semi-hexagonal shape metallic patch loaded with SRR-CC (Split ring Resonator-Connected C shape) metamaterial unit cell to enhance the impedance bandwidth as well as gain of the proposed antenna. The proposed antenna element can be easily extended into two-port and four-port MIMO antenna configurations. Four radiating elements of the proposed antenna are printed on 122.4*122.4 μm2 quartz substrate having a thickness of 10 μm. The radiating elements are placed orthogonally to achieve high isolation and miniaturization in the MIMO system. The proposed antenna exhibits super-wide impedance bandwidth (S11 ≤ − 10 dB) in the range of 0.9–10.1 THz (with fractional bandwidth of 168% at f0 = 5.5 THz) while isolation of antenna is more than 20 dB in the whole operating band. The peak gain of the antenna is 7.51 dBi with more than 95% radiation efficiency in the entire band. The stable radiation pattern, high gain, high radiation efficiency, and good diversity performance of the proposed antenna make it suitable for many THz applications such as breast cancer detection, sugar measurement, drug detection. [ABSTRACT FROM AUTHOR]

In this paper, a 9T SRAM cell with low power (LP9T) and improved performance has been proposed. This cell is free from half-select issue and works with single-ended read and differential write operation in the sub-threshold region. To evaluate the relative performance, the obtained characteristics of LP9T SRAM cell are compared with other state-of-the-art designs at 45-nm technology node. The read and write power dissipation of LP9T SRAM cell is reduced by 1. 6 5 × and 1. 8 4 × as compared to Conv.6T SRAM cell. In proposed cell, leakage power is reduced by 1. 5 8 × , 1. 4 0 × , 1. 4 7 × , 1. 0 5 × , 1. 5 7 × and 1. 3 1 × as compared to conventional 6T (Conv.6T), low power (LP8T), transmission gate 8T(TG8T), transmission gate 9T (TG9T), Schmitt trigger 9T (ST9T), and positive feedback control 10T (PFC10T) SRAM cells. This reduction in leakage power is attributed to stacking effect. LP9T SRAM cell also exhibits significant improvement in read/write access time as compared to all considered cells. Also, the read and write energy of proposed cell is lowest among all considered cells. The LP9T SRAM cell has 2. 2 × and 1. 6 3 × higher read and write stability as compared to Conv.6T SRAM cell. Proposed SRAM cell has the highest value of ON to OFF current ratio ( I on ∕ I off ) which signifies the highest bit-cell density among all considered cells. The LP9T SRAM cell occupies 1. 2 0 × large area as compared to Conv.6T SRAM cell. The overall quality of SRAM cell is calculated through the electrical quality metric (EQM). It is observed that LP9T SRAM cell has the highest value of EQM in comparison to considered cells at 0.3 V supply voltage. [ABSTRACT FROM AUTHOR]

With the aggressive growth of the internet of things-based applications in the domestic and industrial domain, the embedded static memory is also under renovation stage to eliminate classical barriers such as soft errors, poor stability, and mediocre performance. In this work, a novel twelve transistors (12T) SRAM cell is presented that replaces the conventional inverter with Schmitt trigger-based inverter in core latch. The proposed SRAM circuit has been compared with four formerly reported designs for investigating the improvement in terms of various performance metrics. These designs include conventional six transistors (6T), tunable transistor 8T (T8T), PPN inverter-based 10T (PP10T), and stable low read power 11T (S11T) cells. The presented cell effectively minimizes the soft errors attributed to 1. 3 6 × / 1. 2 7 × / 1. 6 6 × / 1. 2 7 × enhancement of critical charge compared to 6T/T8T/PP10T/S11T cells. Also, the proposed bit-cell effectively mitigates multi-bit-cell upsets because it allows bit interleaving array structure. The presented bit-cell also shows reduction in leakage power by 1. 0 8 × / 1. 3 3 × / 0. 4 3 × / 1. 2 8 × in comparison to 6T/T8T/PP10T/S11T cells, respectively. The read and write stability of proposed bit-cell circuit is enhanced by 1. 9 6 × / 1. 8 8 × / 1 × / 1. 9 2 × and 1. 1 5 × / 1. 1 9 × / 1. 2 9 × / 1. 4 5 × , respectively, in comparison to 6T/T8T/PP10T/S11T cells, respectively. In addition to this, proposed cell exhibits improvement in dynamic power, data retention voltage, and overall electrical quality matrix. Variability comparison of key design metrics such as read power and read current of the proposed SRAM circuit with 6T cell has also been presented in this work. [ABSTRACT FROM AUTHOR]

Advent and rapid development of on-chip computation in applications based on internet of things has opened space for integration of human life processes with technology. Wireless sensor node is a crucial component of this integration and SRAM employed in these nodes is under renovation phase. In this work, a novel single ended, bit-line powered 10T static random-access memory cell is proposed which improves access time, dissipates low power and supports bit-interleaving. The performance metrics of proposed design are compared with conventional 6T (conv.6T), tunable 8T(TUA8T), transmission gate based 9T(TRD9T), PPN10T(P10T), Schmitt-trigger based 10T (STR10T), loop cutting 10T (LC10T), and data dependent 11T(DD11T) cell to affirm the novelty of observed results. The reduction of soft error in proposed 10T cell is indicated by 1.22 × /1.13 × /1.13 × /0.91 × /1.49 × /1.12 × improvement in critical charge in comparison to conv.6T/TUA8T/TRD9T/STR10T/P10T/LC10T cell respectively. The read and write delay of proposed cell is improved by 1.56 × /1.04 × //1.04 × /1.57 × /1.14 × /1.12 × /1.05 × and 3.29 × /2.29 × /2.49 × /7.94 × /7.15 × /3.38 × /2.32 × respectively compared to conv.6T/TUA8T/TRD9T/STR10T/P10T/DD11T/LC10T cell. Additionally, read and write static noise margin of proposed 10T cell is improved by 2.22 × /2.04 × /1 × /1.67 × /1.06 × /1.75 × /1 × and 1.18 × /1.22 × /0.89 × /0.93 × /1.23 × /1.33 × /0.98 × respectively in comparison to conv. 6T/TUA8T/TRD9T/STR10T/P10T/DD11T/ LC10T cell. This article further demonstrates 1.88 × and 1.26 × tighter disperse in read power variability and read current variability respectively as compared with that of conv. 6T SRAM cell. The reduced cell density due to more number of transistors is compensated by improved I on / I off ratio. [ABSTRACT FROM AUTHOR]

Satellite communication plays a vital role in extending 5G cellular networks to hard-to-reach areas, including airplanes, railways, shipments, other transport mechanisms, and especially in rural regions of the country that are traditionally beyond the reach of cellular service providers. The devices, specifically those incorporating static memories, being employed for satellite communication, face the challenge of getting prone to cosmic radiations or alpha particle strikes. These strikes cause multi-bit errors in static-memory cells that lead to loss of total output yield. This work proposes a low power twelve transistor (12T) SRAM cell that confirms a reduction in multi-bit errors for the Internet of things based devices supporting fifth-generation (5G) communication system. The proposed SRAM ensures improved read and write ability by utilizing a read decoupled access path and loop cutting mechanism, respectively. The proposed design improves read/write stability by 2.02 × /1.05 × in comparison to conventional 6T cell with 2.52 × silicon space overhead. The area overhead is neutralized by 3.17 × improvement in I on / I off ratio that improves cell density of SRAM cell. The improved critical charge of the proposed 12T SRAM cell is compared with four other considered cells to ensure the reduction in multi-bit soft errors, and thereby confirming its suitability for devices supporting satellite communications. The proposed design successfully eliminates the half-select issue that enables the implementation of the bit-interleaved architecture. The leakage power of the proposed 12T cell is improved by 2.65 × in comparison to conventional 6T attributed to series-connected devices used as loop cutting pair. This reduction of leakage power remains sustained till 110 ∘ temperature. The simulation of this work has been conducted with cadence virtuoso tool using GPDK 45 nm technology file. [ABSTRACT FROM AUTHOR]

In the present paper, we introduce a new parametric fuzzy divergence measure on intuitionistic fuzzy sets. Some properties of the proposed measure are also being studied. In addition, the application of the intuitionistic fuzzy divergence measure in decision making and consequently choosing the best medicines and treatment for the patients has also been discussed. There are some diseases for which vaccine is not available. In that case, we have devised a method to choose the best treatment for the patients based on the results of clinical trials. [ABSTRACT FROM AUTHOR]

In the proposed work, a differential write and single-ended read half-select free 12 transistors static random access memory cell is designed and simulated. The proposed cell has a considerable reduction in power dissipation with better stability and moderate performance. This cell operates in subthreshold region and has a higher value of read static noise margin as compared to conventional six transistors static random access memory cell. A power cut-off technique is utilized between access and pull-up transistors during the write operation. It results in an increase in write static noise margin as compared to all considered cells. In the proposed cell, read and write access time is improved along with a reduction in read/write power dissipation as compared to conventional six transistors static random access memory cell. The bitline leakage current in the proposed cell is reduced which improves the Ion/Ioff ratio of the cell under subthreshold region. The proposed cell occupies less area as compared to considered radiationhardened design 12 transistors static random access memory cell. The computed electrical quality metric of proposed cell is better among considered static random access memory cells. Process variation analysis of read stability, access time, power dissipation, read current and leakage current has been performed with the help of Monte Carlo simulation at 3,000 points to get more soundness in the results. All characteristics of static random access memory cells are compared at various supply voltages. [ABSTRACT FROM AUTHOR]

The growing demand of Internet of things based portable gadgets motivate to develop low power static random access memory (SRAM) cell. It occupies large portion in modern system on chip devices. In this context, a detailed review on various SRAM cell topologies has been performed which includes comparative analysis of design parameters and challenges. To perform the comparative analysis, considered SRAM cell topologies are simulated with cadence virtuoso IC6.1.5-64b at 45 nm generic process design kit technology file. It is worthy to notice that 9T SRAM cell has highest value of read stability among considered cells. It is attributed to use of differential read decoupled structure. The 7T SRAM cell has highest value of write ability among considered cells. It is observed that 8T SRAM cell has lowest read power dissipation among considered cells. It happens due to the use of stack transistor in read path of the cell. The lowest value of read access time is also observed in 8T SRAM cell among considered SRAM cells. It is 1.82 × higher as compared to conventional 6T SRAM cell. Further, the write access time of 9T SRAM cell is lowest among considered cells. This is 1.41 × less as compared to conventional 6T SRAM cell. Static noise per unit area to power delay product ratio (SAPR) is used to evaluate the overall performance of considered SRAM topologies. It is observed that 8T SRAM cell has the highest value of SAPR among considered SRAM cells. It is 1.91 × as compared to conventional 6T SRAM cell. All the comparison has been done at 1.0 V supply voltage. [ABSTRACT FROM AUTHOR]

The charged defect states in chalcogenide glasses (ChGs) are responsible for the hopping conduction. The estimation of the density of defect states (i.e., DDS) is a crucial task when we choose a specific ChG as electronic material for its utilization in industry-level applications. ChGs are also famous as electronic materials since they possess exceptional electrical properties (e.g., thermally governed ac/dc conduction, resistive switching, dielectric dispersion). The present study reports the results of the low-temperature dc conductivity measurements in some multicomponent glasses of SeTeSnPb. For this, the dc conductivity has been measured in the low-temperature range. The detailed analysis of obtained data indicates that the dc conductivity obeys Mott's T−1/4 law in this region. The DDS has been determined and its composition dependence is also discussed. [ABSTRACT FROM AUTHOR]

This paper presents a circuit-level technique of designing a low power and half select free 10T Static Random-Access Memory Cell (SRAM). The proposed cell works with single end read operation and differential write operation. The proposed bit-cell is free from half select issue and supports bit interleaving format. The presented 10T cell exhibits 40.75% lower read power consumption in comparison to conventional 6T SRAM cell, attributed to reduction of activity factor during read operation. The loop cutting transistors used in core latch improve write signal-to-noise margin (WSNM) by 14.94% and read decoupled structure improve read signal-to-noise margin (RSNM) by 2. 0 2 × as compared to conventional 6T SRAM. In the proposed work, variability analysis of significant design parameters such as read current, stand-by SNM, and read power of the projected 10T SRAM cell is presented and compared with considered topologies. Mean value of hold static noise margin of the cell for 3000 samples is 1. 7 5 × times higher than the considered D2p11T cell. The proposed 10T cell shows 1. 8 3 × and 1. 2 2 × narrower read access time and write access time, respectively, as compared to conventional 6T SRAM cell. Read current to bit-line leakage current ratio of the proposed 10T cell has been investigated and is improved by 2. 7 5 × as compared to conventional 6T SRAM cell. The write power delay product and read power delay product of the proposed 10T cell are 4. 2 1 × and 2. 7 9 × lower than conventional 6T SRAM cell. In this work, cadence virtuoso tool with Generic Process Design Kit (GPDK) 45 nm technology file has been utilized to carry out simulations. [ABSTRACT FROM AUTHOR]

In this article, a Schmitt trigger based 12-Transistors(ST12T) static random-access memory (SRAM) bit-cell has been proposed. The Read Power of proposed cell is reduced by 29.17%/ 24.14% /7.66% /5.87% /7.67% /16.62% when compared to 6T/ 7T/ TA8T/ 9T/ PPN10T/ D2p11T SRAM cells. Proposed ST12T cell also shows 1.52 × and 1.86 × lesser variability in read current and read power respectively as compared to conventional 6T SRAM cell. Further, the write access time/read access time of the proposed topology are improved by 1.71 × / 1.82 × as compared to 6T SRAM cell. The read power delay product of proposed ST12T cell is minimum with variation in supply voltage from 0.5 to 1 V when compared with all considered SRAM cells. ST12T SRAM cell also exhibits 26.82% and 8.87% higher read static noise margin and write static noise margin respectively as compared to conventional 6T SRAM cell. This may be attributed to Schmitt trigger design of inverters in core latch of proposed SRAM cell. The proposed bit-cell is free from half select issue and supports bit interleaving format. Authors have used cadence virtuoso tool with Generic Process Design Kit 45 nm technology file to carry out simulation. [ABSTRACT FROM AUTHOR]

In this paper, a 11-T static random-access memory (SRAM) cell has been examined that shows a fair reduction in read power dissipation while upholding the stability and moderate performance. In the presented work, parametric variability analysis of various design metrices such as signal to noise margin, read current and read power of the Proposed 11T cell are presented and compared with few considered topologies. The Proposed cell offers single ended write operation and differential read operation. The improvement in read signal to noise margin and write signal to noise margin with respect to conventional 6T SRAM is 10.63% and 33.09%, respectively even when the write operation is single ended. Mean hold static noise margin of the cell for 3000 samples is 1. 7 5 × times higher than considered D2p11T cell. Sensitivity analysis of data retention voltage (DRV) with respect to temperature variations is also investigated and compared with considered topologies. DRV variation with temperature is least in FF process corner. In comparison to conventional 6T SRAM cell, the write and read delay of Proposed 11T cell gets improved by 2. 5 5 × and 1.64%, respectively. Proposed 11T topology consumes least read energy in comparison with considered topologies. In comparison with another considered 11T topology, i.e., D2p11T cell, Proposed cell consumes 13.11% lesser area. Process variation tolerance with Monte Carlo simulation for read current and read power has been investigated using Cadence virtuoso tool with GPDK 45-nm technology. [ABSTRACT FROM AUTHOR]

This paper reports the temperature dependence of d.c. and a.c. conductivity in the glassy alloys of Se70Te30 and Se70Te28M2 (M = Cd, Sb, Zn). The role of the Cd, Sb, Zn elements as foreign atoms has been examined on the d.c./a.c. conduction and photoconduction in binary Se70Te30 glass. These multi-component chalcogenide glasses have been prepared by conventional, cost-effective and well-known melt-quench technique. Thermally activated a.c. conduction shows the presence of the compensation effect that is confirmed by the Meyer–Neldel relation between the associated activation energy and the pre-factor of a.c. conductivity. The metal-induced effects of Cd, Sb, Zn on the photosensitivity of parent glass are also discussed. [ABSTRACT FROM AUTHOR]

The nematode, Procamallanus spiculogubernaculus Agarwal, 1958 was found from the Stinging catfish, Heteropneustes fossilis (Bloch, 1794) from Ghazipur, Delhi, India. Morphological characterization, including scanning electron microscope observation supplemented with DNA sequences is provided. Specimens recently found are characterized by the presence of an unlined buccal capsule having a small basal ring, esophagus muscular and glandular, vulva position is slightly post-equatorial, tail conical, long, and ending in three digit-like processes, phasmids present at about mid-length and cloaca located at the posterior end. In this study the species P. spiculogubernaculus is validated on the basis of molecular data after 47 years from its original description. In the scanning electron microscope examination, the topology of mouth and sensory pits in anterior portion, while the phasmids and digit like processes in posterior portion is clearly observed. Molecular data of the 18S ribosomal RNA and mitochondrial cytochrome c oxidase subunit 1 (cox1) gene were analyzed. Molecular phylogenetic analyses supported the validity of Procamallanus spiculogubernaculus and confirmed the paraphyletic status of the members of Procamallanus, Spirocamallanus, Camallanus and Paracamallanus. Taxonomic status of members of the family Camallanidae are briefly discussed along with the results of the systematic evaluation of P. spiculogubernaculus based on molecular data. [ABSTRACT FROM AUTHOR]

Presents a study that examined the periodic oscillations in radio frequency superconducting quantum interference devices (SQUID) fabricated from screen printed bismuth-strontium-calcium-copper-oxygen (BiSrCaCoO) thick films. Schematic diagram of the geometry of radio frequency SQUID; Characteristics of the SQUID at different temperatures; Background on BiSrCaCoO thick films.

Renal LGFMS is an extremely rare tumor. So far, only four cases have been reported in literature. LGFMS are indolent tumor with distinctive histopathological features with potential for late recurrences and metastasis. The diagnosis is made on histopathological examination and supported by immunohistochemical analysis. A 35-year-old young male was presented with flank pain and lump and diagnosed as low-grade fibromyxoid sarcoma after surgery on immunohistochemical analysis. This is the fifth case of renal LGFMS and we presented the review of literature. Radical surgery remains the primary treatment modality. Long follow-up is mandatory. [ABSTRACT FROM AUTHOR]

Cymbopogon martinii, commonly known as palmarosa, is an essential oil-bearing crop cultivated by the farmers for production of oil used in perfumery, cosmetics and flavour industries. The study on the economics of palmarosa cultivation has shown that the major portion of operational cost was shared by human labour, distillation charges and preparation of nursery. Total variable cost was found to be ₹ 47926 per hectare per year. The gross returns were found to be ₹ 124000 per hectare per year. The net returns over variable cost were ₹ 76074 per hectare. The benefit-cost ratio was found to be 2.59 indicating a higher profit to the farmers. The independent variables like human labour, planting material and distillation charges were positive indicating significant impact on the returns from the crop. There is need for effective market intelligence system to ensure remunerative price of the produce to the farmers. [ABSTRACT FROM AUTHOR]

Trabecular bone with its porous structure is an important compressive load bearing member. Different structural factors such as porosity, non-homogeneous deformation, varying trabeculae thickness, connectivity, and nanoscale (10 nm to 1 μm) to macroscale (~0.1 mm to 10 mm) composition hierarchy determine the failure properties of trabecular bone. While the above factors have important bearing on bone properties, an understanding of how the local nanoscale properties change at different macroscale compressive strain levels can be important to develop an understanding of how bone fails. In the present work, such analyses are performed on bovine femoral trabecular bone samples derived from a single animal. Analyses focus on measuring nanoindentation elastic moduli at three distinct levels of compressive strains in the bone samples: (1) when the samples are not loaded; (2) after the samples have been loaded to a strain level just before apparent yielding and the macroscale compression test is stopped; and (3) after the samples have been compressed to a strain level after apparent yielding and the macroscale compression test is stopped. Nanoindentation elastic modulus values are two orders of magnitude higher than the macroscale compressive elastic modulus values of all samples. A high variability in macroscale compressive elastic modulus values is observed because of porous architecture and small sample size. Nanoindentation elastic modulus values show a progressive reduction with increase in the extent of macroscale compressive deformation. Apparent yielding has a significant effect on this trend. The decrease in nanoindentation modulus value for all samples accelerates from approximately 20% before yielding to approximately 60% after yielding in comparison to the nanoindentation modulus values at 0% strain level. The level of variation in the predicted nanoindentation modulus values is the lowest for uncompressed samples (~16–18%). However, with increase in the extent of compression, the level of variation increases. It varied between 50% and 90% for the samples tested after yielding showing a widespread heterogeneity in local nanoscale structural order after apparent yielding. Scanning electron microscope (SEM) observations suggest that apparent yielding significantly destroys local nanoscale structural order. However, quantitative results suggest that a significant residual nanoscale stiffness varying from 5 GPa to 8 GPa among different samples still remains for possible repair facilitation. [ABSTRACT FROM AUTHOR]

The increasing computational requirements of advanced numerical tools for simulating material behaviour can prohibit direct integration of these tools in a design optimization procedure where multiple iterations are required. Therefore, a design approach is needed that can incorporate multiple simulations (multi-physics with different input variables) of varying fidelity in an iterative model management framework that can significantly reduce design cycle times. In this research, a material design tool based on a variable fidelity model management framework is applied to obtain the optimal size of a second phase, consisting of silicon carbide (SiC) fibres, in a silicon-nitride (Si3N4) matrix to obtain continuous fibre SiC-Si3N4 ceramic composites (CFCCs) with maximum high temperature strength and high temperature creep resistance. This investigation shows how models with different dimensions and input design variables can be handled and integrated efficiently by the trust region model management framework, while significantly reducing design cycle times in application to the design of multiphase composite materials. [ABSTRACT FROM AUTHOR]

The article focuses on a study examining the functional diversity and detritus soil food web of soil inhabiting nematodes in natural woodland dominated by Acacia nilotica L. The researchers applied Trophic diversity index (TDI) and Shannon-Weaver index (H) to address functional diversity and channel index (CI) for the food web. Findings revealed a high degree of positive correlation between population of dorylaims and maturity index (MI) and some degree of negative correlation existed between population of plant parasitic nematodes and MI.

The article assesses comparative hemotoxicity of cybil and fenvalerate in "Rattus norvegicus." The agriculturists, in their bid to obtain quantitative and qualitative improvement of food products, have been using pesticides indiscriminately. The increase in food and fiber products has become more dependent on the use of synthetic chemicals, particularly pesticides. Synthetic pyrethroids have emerged as a major class of useful agricultural insecticides. In the present investigation the synthetic pyrethroids cybil and fenvalerate have been selected to investigate their haemotoxic potential in albino rats after acute and subacute treatment.

Root length density (LV), mid-day leaf water potential ( Ψleaf) and yield of wheat were studied in 1983 – 1984 and 1984 – 1985 on a Phoolbagh clay loam (Typic Haplaquoll) and on a Beni silty clay loam (Aquic Hapludoll) in the Tarai region of Uttar Pradesh under naturally fluctuating shallow (0.4 – 0.9 m, SWT) and medium-depth (0.8 – 1.3 m, MWT) water table conditions with six water regimes: rainfed (I0); irrigation at cown root initiation (I1); at crown root initiation and milk (I2); at crown root initiation, maximum tillering and milk (I3); at crown root initiation, maximum tillering, flowering and milk (I4); and at crown root initiation, maximum tillering, flowering, milk and dough (I5). Maximum rooting depth (0.8 m under SWT and 1.05 m under MWT conditions) was attained at the dough stage (115 days after sowing, DAS) and was more strongly influenced by fluctuations in water table depth than by the water regime. For wet regimes (I2– I5), roots were concentrated at and above the water table interface and had greater horizontal development, whereas in dry regimens (I0 and I1), due to deficient moisture conditions in the upper soil layer (0.45 m) they invaded lower horizons and had a greater vertical distribution Ψleaf was not significantly affected by water regime (I1– I5) up to 94 DAS during a wet year (1983 – 1984) and up to 74 DAS during a dry year (1984 – 1985), but was significantly affected thereafter. Grain yields with water regimens I1– I5 during a wet year and for the I2– I5 treatments during a dry year at either water table depth were not significantly different, but there was a (non-significant) trend to lower yield with increasing soil water deficit. Under SWT in I2, the average grain yield wsa 5130 kg ha–1 and under the I3 regime, 5200 kg ha–1. Likewise, under MWT in I3, it was 5188 kg ha–1 and under the I4 regime, 5218 kg ha–1. The results indicate that application of irrigation of more than 120 and 180 mm under SWT and MWT conditions, respectively, did not raise yield. Irrigation given as per schedule I2 under SWT and I3 under MWT conditions in the Tarai situation, appears to be more effective than a very wet regime (I5). [ABSTRACT FROM AUTHOR]

Superconducting YBCO thin films have been fabricated by sequential electron beam evaporation of metallic constituents for yttrium and copper while barium is replaced with BaF2. The conversion of BaF2 → BaO has been attained through wet oxygen annealing. Correlations of stoichiometry with microstructural, as well as superconducting, properties of the films have been examined. Results are given for YBa2Cu3O7−δ thin films on SrTiO3 (1 0 0) and YSZ (1 0 0) single crystal substrates. The usefulness of the BaF2 preparation route for the fabrication of mixed phase (Y123 + Y124) and pure Y124 is also demonstrated. Microstructural properties of Y123 thin films indicate different growth processes for the two substrates. [ABSTRACT FROM AUTHOR]

Experiments were conducted during the winter seasons of 1983-1984 and 1984-1985 to identify suitable irrigation regimes s for wheat grown after rice in soils with naturally fluctuating shallow water table (SWT) at a depth of 0.4 to 0.9 m and medium water table (MWT) at a depth of 0.8 to 1.3 m. Based on physiological stages, the crop was subjected to six irrigation regimes viz., rainfed (I); irrigation only at crown root initiation (I); at only crown root initiation and milk (I); at crown root initiation, maximum tillering and milk (I); at crown root initiation, maximum tillering, flowering and milk (I); and at crown root initiation, maximum tillering, flowering milk and dough (I). Tube-well water with an EC <0.4 dsm was used for irrigation. Based on 166 mm effective precipitation during the cropping season, 1983-1984 was designated as a wet year and 1984-1985 with 51 mm as a dry year. The change in profile soil water content ΔW (depletion) in the wet year was less (23%) under SWT and 10% under MWT as compared to the dry year. The ground water contribution (GWC) to evapotranspiration (ET) was 58% under SWT and 42% under MWT conditions in both the years. The GWC in the wet year was 20% under SWT and 23% under MWT. Of the total net water use (NWU), about 85% was ET and 15% drainage losses. The NWU was highest (641 and 586 mm) in I under SWT and MWT conditions, respectively, but not the yield (5069 kg ha). Compared to I, NWU in I treatment decreased by 10% in the wet and 25% in the dry year. A similar trend was observed in the I treatment under MWT condition. However, there was no statistically significant difference between yields of the I to I treatments of either water table depth during the wet year. This was also true during the dry year for the I to I treatments. Under SWT, in I, the grain yield was 5130 kg ha and under I regime, 5200 kg ha. Under MWT in I, the yield was 5188 kg ha and under I regime, 5218 kg ha. Thus it appears that in the Tarai region where the water table remains shallow (<0.9 m) and medium (<1.3 m) for most of the wheat growing season applications of more than 120 and 180 mm irrigation under SWT and MWT conditions, respectively were not necessary. Irrigation given only at crown root initiation and milk stages under shallow water table conditions, and at crown root initiation, maximum tillering and milk stages under medium water table conditions, appears to be as effective as frequent irrigations. [ABSTRACT FROM AUTHOR]

Aim: Dorsal onlay free graft urethroplasty with inner preputial skin and buccal mucosa is a versatile procedure for treatment of bulbar urethral stricture. We present our experience of 50 cases. Materials and Methods: A total of 50 patients with bulbar urethral stricture underwent dorsal onlay free graft urethroplasty. In 38 patients the free graft was inner preputial skin and 12 patients received buccal mucosa. Mean stricture length was 6.5 cm. Etiology was traumatic in 25 cases, inflammatory in 11 and instrumentation in 14 cases. Results: Over a mean follow up of 32 months, 6 patients had recurrent stricture. 5 were managed by optical urethrotomy and one required a repeat urethroplasty. 4 strictures occurred in the inner preputial group and the patient who required a repeat urethroplasty had inner preputial skin as free graft. Two patients who had buccal mucosa as free graft complained of oral numbness and paresthesia which lasted for 6 to 12 months. Conclusion: Dorsal onlay free graft urethroplasty technique using buccal or inner preputial free graft is an excellent technique for long bulbar urethral stricture which are not amenable to end-to-end anastomosis. [ABSTRACT FROM AUTHOR]