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The article discusses the physicochemical principles for the production of alumina cements based on nickel and cobalt spinel. The results of tetrahedration of the CaO–Al2O3–CoO– NiO system, which undergoes changes due to solid-state exchange reactions in the hightemperature region of the CaO–Al2O3–CoO subsystem at a calculated temperature of 1439 K, as well as the decomposition of the Ca3CoAl4O10 ternary compound near 1530 K, are presented. Thermodynamic analysis establishes the stability of the conodes of the above system, allowing for its triangulation. Modifications of the subsolidus structure are combined and given for the temperature of 1530 K. All binary, ternary, and quaternary combinations thermodynamically stable in the subsolidus region of the system under study are presented. Topological graphs depicting the interconnection of elementary tetrahedrons, which allow the prediction of solid-state processes in multi-component systems, have been constructed. Based on the study of the structure of the CaO–Al2O3–CoO– NiO system, the possibility of technological forecasting of heterophase materials with high-performance characteristics is substantiated. [ABSTRACT FROM AUTHOR]

Phase equilibria of the Ti-Ga-Sn system have been determined at primary crystallization and at 1000 °C in the composition interval ~ 50-100 at.% Ti based on differential thermal analysis, x-ray powder diffraction, scanning electron microscopy and electron microprobe analysis. Partial liquidus and solidus projections, the melting diagram, a number of vertical sections, isothermal section at 1000 °C, as well as the reaction scheme (Scheil diagram) for the Ti-Ga-Sn system were constructed. A ternary compound Ti5GaSn2 (τ) (Nb5SiSn2-type structure, tI32-I4/mcm), found by us previously, forms by peritectic reaction L + Ti2(Sn, Ga) + Ti5(Sn, Ga)3-4 ⇄ τ at 1500 °C and has a wide homogeneity range from 9 to 23.5 at.% Ga at solidus temperature and from 4 to 34 at.% Ga at 1000 °C, and located along constant composition of ~ 62.5 at.% Ti. D88-type compounds Ti5Sn3 and Ti5Ga4 form a continuous solid solution, denoted Ti5(Sn, Ga)3-4, at all investigated temperatures. Ga-poor part of it (below ~ 12.5 at.% Ga) forms by an interstitial mechanism, while in the interval above ~ 12.5 at.% Ga it is a substitutional phase. Isostructural compounds Ti2Sn and Ti2Ga also form a continuous solid solution Ti2(Sn, Ga) at solidus temperatures, which decomposes with decreasing temperature. Meanwhile, at 1000 °C, one more continuous solid solution Ti3(Sn, Ga) forms between isostructural compounds Ti3Sn and Ti3Ga. [ABSTRACT FROM AUTHOR]

The isothermal section at б 00°C of the phase diagram of the ternary system Gd-Ge-Sn was constructed in the whole concentration range, based on X-ray powder diffraction and energy-dispersive X-ray spectroscopy. The formation of two continuous solid solutions, GcijGe.j-jSn (x=0-4, structure type SmsGe41 Pearson symbol oP36, space group Pntna, д=7.8565(12)-?.040(2), 6 = 14.812(2)-15.552(3), c=7.7781(12)-8.201(2) A) and GdsGea-JSn* (x=0-3, structure type Мпіз, fiP16, a= 8.57 02(8)-9.03 06 (13), c=6.430 5(5)-6.5 941(10) A), and limited solid solutions based on the binary compounds GdllGel0 (6 at.96 Sn), GdSn, (5.5 at.96 Ge), Gdn, (2 at.96 Ge), GdSn2 (5 at.96 Ge), and GduSn (3.5 at.96 Ge) was established. Three following ternary compounds were found in the system at 600°C: GcGejSn«.». GdGeftTS_<).8SSn1.iS_x.ls, and GdjGeSn«,. The detailed crystal structures of two of them were refined on X-ray powder diffraction data: GdGe0JS_<).8SSnl.2S_l.U1 structure type ScCoft2SSilTS, o512, Стет, д=4.3206(4)-4.3035(4), 6=16.4824(15j-16.443 3(14), c=4.1270(4)-4.0961(4) A and Gd2Ge2.9lSnm, structure type GdjGej jjBi, oS32, Cmcnt, a=4.0445(6), 6=30.473(5), c=4.1694(6) A. The third compound, GdjGeSn, adopts the structure type NcLjGeSr. The crystal structures are closely related and are built from layers of Gd trigonal prisms centered by Ge atoms (or in part by Sn atoms) and square-mesh nets of Sn atoms (or in part Ge atoms), which alternate along the crystallographic direction [010]. Partial disorder of Ge and Sn atoms is observed. [ABSTRACT FROM AUTHOR]

The interaction of the components in the ternary system Hf-Re-Si was investigated by X-ray powder diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The isothermal section of the phase diagram at 1000°C was constructed in the full concentration range. The limits of solubility of Si in the binary compounds Hf5Re24 and HfRe2 were found to be 11 and 16 at.%, respectively. The existence of three ternary compounds was confirmed and their crystal structures were refined: HfReSi2 (ZrCrSi2-type structure, space group Pbam, a=9.1271(3) Å, b=10.0356(4) Å, c=8.0708(3) Å), HfReSi (ZrNiAl-type structure, space group P-62m, a=6.9240(2) Å, c=3.3890(1) Å) and -phase Hf9+xRe4-xSi (Hf9Mo4B-type structure, space group P63/mmc, a=8.5835(12) Å, c=8.7135(13) Å). The character of the interaction between the components in the Hf-Re-Si system and related ternary systems is briefly discussed. [ABSTRACT FROM AUTHOR]

Using X-ray diffraction phase and structural analysis and partially microstructural analysis methods the phase equilibria in the ternary system Pr–Cu–Ge were investigated and the isothermal sections of the phase diagram of the system at 870 K (0–50 at.% of Pr) and 670 K (50–100 at.% of Pr) were constructed. The existence of seven ternary compounds PrCu2Ge2, Pr2CuGe6, Pr2Cu3Ge3, PrCu0.817Ge2, Pr6Cu8Ge8, PrCu1.25–0.95Ge0.75–1.05, PrCu0.77–0.5Ge1.23–1.5 was established at 870 K. Only one ternary germanide ~ Pr0.6Cu0.22Ge0.18 with undetermined crystal structure was found in R rich range at 670 K. All ternary germanides are formed at constant composition except phases with AlB2 structure type. Appreciable solubility of the third component in the compounds of binary systems was not observed. The structure parameters were determined for ternary germanides: Pr2CuGe6 (structure type (ST) Ce2CuGe6, Pearson symbol (PS) oS18, space group (SG) Amm2, a = 4.19300(4) Å, b = 4.05742(4) Å, c = 21.4823(2) Å, RI = 0.0686, RP = 0.0993), PrCu1.25Ge0.75 (ST AlB2, PS hP3, SG P6/mmm, a = 4.2922(2) Å, c = 3.9193(3) Å, RI = 0.0543, RP = 0.1036), PrCu0.72Ge1.28 (ST AlB2, PS hP3, SG P6/mmm, a = 4.19347(6) Å, c = 4.1817(1) Å, RI = 0.0504, RP = 0.0728). Relationships of investigated system Pr–Cu–Ge with previously studied R–Cu–Ge systems, and structure peculiarities of established ternary germanides of Cu and Pr were analyzed. [ABSTRACT FROM AUTHOR]

Dolomite@Al2O3 spherical particles with core–shell structure were fabricated by using the dolomite powders as the core and wrapping corundum powders on their surface. The phase evolution and microstructure of the dolomite@Al2O3 spherical particles with different firing temperatures were studied. As the spherical particles fired at different temperatures, the dolomite in the spherical core decomposed into MgO and CaO. Due to the Kirkendall effect, MgO and CaO diffused into the shell of the spherical particle and left Kirkendall holes in the core. The holes produced by the Kirkendall effect and the decomposition of dolomite act together to form a hollow structure in the center. And during the diffusion process, MgO and CaO reacted with corundum to generate spinel and calcium hexaaluminate. A small amount of spinel and calcium hexaaluminate can form a ternary compound Ca2Mg2Al28O46. Moreover, simulation software Factsage and Abaqus were used separately to help prove the phase evolution and the introduction of spherical particles to the properties of refractories. To test the lightweight effect of dolomite@Al2O3 spherical particles on refractories, it was introduced into spinel–corundum refractories as medium particles in different content and fired at different temperatures. The results show that after firing at 1650°C for 3 h with introducing 30% dolomite@Al2O3 spherical particles, the samples can reach a high compressive strength (128 MPa), high refractoriness under load (1683°C), and low thermal conductivity (1.79 W (m K)−1). [ABSTRACT FROM AUTHOR]

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Crystal structure of the ternary compound ErPtSi2 (diffractometer HZG-4a, CuKα-radiation, structure type YIrGe2, Pearson symbol oI32, space group Immm, a=4.19395(6) Å, b=8.41465(13) Å, c=15.85404(19) Å, RB=0.0639, RP=0.0424, and χ²=1.11) was studied by X-ray powder diffraction method. Intermetallide ErPtSi2 is the first representative of YIrGe2 structure type in R-Pt-Si systems. Crystal structures of ternary compounds in the system Er-Pt-Si were analyzed and the structural relationships between them were established according to the systematics of the nearest coordination environment around the less electronegative Er atoms. Compounds, found in the system, were divided into two main types based on the nearest coordination environment, namely on the derivatives of hexagonal and pentagonal prisms with different amounts of additional atoms. These polyhedra exist both alone and in the combination with each other and with cubooctahedra in the structures of the different ternary silicides of erbium. Such a relatively small coordination environment of rare-earth metal atoms can be explained by the structural peculiarities of the ErPt3 binary compound. The coordination polyhedra of the smallest atoms are trigonal prisms with different amounts of additional atoms or cubooctahedra. [ABSTRACT FROM AUTHOR]

We study phase equilibria in a section of 7.14 at.% La in the La–Cu–Si ternary system at 870°K by the methods of X-ray phase diffraction and structural analysis. The existence of two new LaCu9.61Si3.39 and LaCu8.37Si4.63 ternary compounds is established and their crystal structures are studied by the X-ray powder diffraction method. Both compounds are the first representatives of the NaZn13 structural type and its CeNi8.5Si4.5 tetragonally deformed superstructure in the R–Cu–Si systems. We also analyze structural transformations based on the NaZn13 structural type, as well as the affinity of the investigated compounds with the structures of binary and ternary lanthanum and copper silicides with respect to the closest coordination surrounding of the least electronegative atoms. Finally, we illustrate structural relationships between the investigated compounds and simple crystal structures (of copper and silicon) with which they are in phase equilibria in the La–Cu–Si system. [ABSTRACT FROM AUTHOR]

Summary: We report fabrication of solar cell device with Copper Zinc Sulfide (CZS) thin films as absorber layer. CZS thin films prepared using chemical spray pyrolysis technique at a pressure of 10−3 mbar at different substrate temperatures. Structural, morphological, optical, compositional and electrical properties of as prepared films are investigated. Structural analysis shows crystalline nature with mixed phase containing CuS‐ZnS binary composite. Atomic Force Microscopy analysis shows the average particle size of 88 nm. Value of work function obtained from ultraviolet photoelectron spectroscopy is 4.58 eV. The band gap of the as‐prepared films varies from 1.62 to 2.06 eV. Hall effect measurement proves the p‐type nature for all the deposited films. Samples deposited at 350°C shows carrier concentration of 1021 cm−3 and electrical conductivity of 526 S cm−1. Solar cell device structure of has been fabricated using the CZS sample deposited at 350°C. The cell parameters obtained are Voc = 0.505 V, Isc = 4.97 mA/cm2, FF = 64.28% and η = 1.6 ± 0.05%. [ABSTRACT FROM AUTHOR]

The isothermal section of the Gd-Ni-In system at T = 870 K was constructed by means of X-ray powder diffraction and EDX analyses. Thirteen ternary compounds, namely GdNi9In2 (YNi9In2 type), Gd1−1.22Ni4In1-0.78 (MgCu4Sn type), GdNiIn2 (MgCuAl2 type), Gd4Ni11In20 (U4Ni11Ga20 type), GdNi1.0-0.7In1.0-1.3 (ZrNiAl type), Gd2Ni2In (Mn2AlB2 type), Gd2Ni1.78In (Mo2FeB2 type), Gd11Ni4In9 (Nd11Pd4In9 type), Gd12Ni6In (Sm12Ni6In type), Gd6Ni2.39In0.61 (Ho6Co2Ga type), Gd14Ni3.29In2.71 (Lu14Co3In3 type), Gd3Ni0.05In0.95 (AuCu3 type) and ~Gd6Ni2In exist in the Gd-Ni-In system at this temperature. The substitution of Ni for In was observed for GdNi1.0-0.7In1.0-1.3 and of In for Gd for Gd1-1.22Ni4In1-0.78. Besides, Gd can enter the structure of NiIn (CoSn type) leading to a solid solution Gd0-0.14NiIn1-0.98. [ABSTRACT FROM AUTHOR]

The melting diagram and reaction scheme (Scheil diagram) of the Al–Ti–Pt system have been constructed for the first time in the composition range 0–50 at.% Pt using the experimental results for as-cast alloys and alloys annealed at subsolidus temperatures. It is established that ternary compounds τ3, τ4, and τ8 form congruently with participation of the liquid phase and compounds τ1, τ2, τ5, τ6, τ7, τ9, and τ11 by peritectic reactions. All compounds take part in phase equilibria with participation of the liquid phase, forming 31 four-phase and 28 three-phase invariant equilibria at temperatures from 1410 to 660°C. [ABSTRACT FROM AUTHOR]

The nature of phase equilibria has been examined for the first time in the Al–Ti–Pt system in the range 0–50 at.% Pt at subsolidus temperatures. Besides the τ1, τ2, and τ3 ternary compounds with AuCu3, Th6Mn23+1, and MgZn2 lattices known from the literature, eight more compounds form in the system at subsolidus temperatures. The structural type is known for three of these compounds. They are τ4 (ZrBeSi), τ5 (CrFe), and τ6 (defective structure of Au4Al type). There are 31 isothermal planes on the solidus surface. All planes are formed with participation of ternary compounds and solid solutions based on binary compounds present in the boundary systems. The highest temperature in this composition range corresponds to the congruent melting of the TiPt phase (1830°C) and the lowest to eutectic l ⇄ + in the binary Al–Pt system (655°C). [ABSTRACT FROM AUTHOR]

To elucidate magnetism and electronic states of X2Co12P7 with X = Ti, Zr and Hf, which are expected to be in a tetravalent state or a trivalent state with one d-electron, we measured magnetizations of polycrystalline samples of X2Co12P7 and compared their magnetic behaviors with that of itinerant ferromagnets Ln2Co12P7 (Ln = lanthanoids), the Curie temperature TC of which is approximately 150 K. As results of magnetization measurements, we found these compounds to show itinerant ferromagnetism with TC = 67, 149 and 133 K for X = Ti, Zr and Hf, respectively. This behavior is in contrast to the case of Ln2Co12P7 in which TC is almost independent of Ln. The lower TC for the case of X = Ti compared with Ln2Co12P7 suggests that the valence of Ti in this compound is +4 rather than +3 and ferromagnetism derived from Co is weakened due to the electron doping from Ti. On the other hand, in the case of X = Zr and Hf compounds, both TC have similar values to that for Ln2Co12P7, indicating that X are almost in the trivalent state. From the result of magnetization measurements, it is clear that there is no localized magnetic moment in these compounds. Therefore, d-electrons in trivalent Zr or Hf show itinerant nature in X2Co12P7. [ABSTRACT FROM AUTHOR]

A series of physicochemical analysis techniques are employed to study the phase equilibria in the aluminum corner of the Al-Ti-Pt system at subsolidus temperatures and in the alloy crystallization process. It has been established for the first time that a ternary τ1 phase (AuCu3 structural type) forms by peritectic reaction L + 2Al5> + ⇄ τ1 at 1405°C. On the solidus surface in the studied composition range at 1405, 1310, 1275, 1060, 925, 820, and 660°C, there are seven isothermal planes that participate in invariant four-phase equilibria involving the liquid phase, three of them being peritectic and the others transitional. [ABSTRACT FROM AUTHOR]

The methods of X-ray phase diffraction and structural diffraction analyses and, partially, the method of microstructural analysis are used to study the phase equilibria in the ternary Tm-Cu-Si system and plot the isothermal section of the phase diagram of this system at 870°K. The existence of seven ternary compounds at this temperature, namely, TmCuSi , TmCuSi , TmCuSi, TmCuSi, TmCuSi , TmCuSi, and TmCuSi is established. It is shown that solely the TmCu binary compound dissolves 5 at.% Si. At the same time, we did not detect any noticeable solubility of the third component in the other binary compounds. The structural parameters are determined for the following ternary compounds: TmCuSi (ST ScNiSi , SG P6 / mmc , PS hP36, a = 8.3898(6), c = 8.6425(7) Å, R = 0.0606, R = 0.0442, R = 0,0351, R = 0.0570, and χ = 1.74), TmCuSi (ZrBeSi, P6 / mmc , hP36, a = 4.1399(3), c = 7.1471(7) Å, R =0.0493, R = 0.0449, R = 0.0698, R = 0.0930, and χ = 1.98), and TmCuSi (AlB , P6/ mmm , hP3, a = 3.9799(3), c = 3.9197(4) Å, R = 0.0543, R = 0.0293, and χ = 1.01). The specific features of the Tm-Cu-Si system and its relationship with the previously studied R-Cu-Si systems are analyzed. [ABSTRACT FROM AUTHOR]

The isothermal section at 600 °C of the La-Zn-Si system was established by using equilibrated alloys and the diffusion couple technique. Microstructural observation and phase identification were performed using optical microscopy, scanning electron microscopy with energy dispersive x-ray spectroscopy and a wave dispersive x-ray spectrometer, and x-ray powder diffraction. Seven ternary compounds were identified in this ternary system, and temporally designated as τ , τ , τ , τ , τ , τ and τ . Two previously reported ternary compounds, viz. τ and τ , were found to exist at 600 °C. EDS analysis revealed that the τ phase contained Si from 2.4 to 6.1 at.% and La from 22.3 to 23.3 at.%. The compositional region of the τ single-phase ranged from 28.3 to 40.7 at.% for Si and from 31.5 to 33.1 at.% for La. Two new ternary phases, τ and τ , were identified. The τ phase with the CeNiSi-type was determined to have a composition range of 36.9-39.2 at.% Si for about 24 at.% La. The τ phase with the ThCrSi-type was found to have a composition range of 18.9-19.7 at.% La and 27.4-30.6 at.% Si. The crystal structures of τ , τ , and τ were not determined. The solubility of Si in LaZn, LaZn, LaZn, LaZn, and LaZn was negligible, and that of Si in LaZn, LaZn and Zn in LaSi, LaSi was determined as 5.1, 2.3, 16.2 and 3.8 at.%, respectively. [ABSTRACT FROM AUTHOR]

We synthesized polycrystalline samples of ternary compounds Ln2Co12P7 (Ln = Y, Pr, Nd, Sm, Gd and Dy) with the Curie temperature being about 150 K and measured magnetization to clarify magnetism of Co sublattice and also to clarify behavior of magnetic moments of Ln3+ in ferromagnetic phase. As a result, magnetism of Y2Co12P7 was found to be a possible weakly itinerant electronic ferromagnetism and found to be similar to that of Lu2Co12P7, indicating that magnetism of Co sublattice does not change with Ln. From results for Ln2Co12P7, we found that spin components of magnetic moments of Ln3+ ferromagnetically couple with exchange field of ferromagnetic moments of Co sublattice. This result means that behavior of magnetic moments of Ln3+ can be described as the single ion model applied to the permanent magnets (LnCo5, Ln2Fe14B etc.) though the sign of coupling constant is opposite of the cases of permanent magnets. This is because magnetic moments of Co and Ln couple through P, not a direct coupling in cases of permanent magnets. [ABSTRACT FROM AUTHOR]

The photocurrent (PC) of hot-wall-epitaxy-grown BaInS layers was studied at different temperatures and for different photoresponse intensities. With increasing temperature, the position of the PC spectra tended to shift toward longer wavelength. These PC peaks corresponded to band-to-band transitions caused by intrinsic transitions from the valence band states to the conduction band states. Also, the bandgap variations were well matched by the equation E( T) = E(0) − 3.79 × 10 T/( T + 499), where E(0) was estimated to be 3.0597 eV, 3.2301 eV, and 3.2606 eV for transitions corresponding to the valence band states Γ(z), Γ(x), and Γ(y), respectively. By use of the selection rule and results from the PC spectroscopy, the crystal field and the spin-orbit splitting were found to be 0.1703 and 0.0306 eV, respectively. Thus, the PC intensity gradually decreased with decreasing temperature. The decrease of PC intensity was caused by the presence of trapping centers associated with native defects in the BaInS layers. The trap level was found to be a shallow donor-level type of 20.4 meV, 1.6 meV below the conduction band. Consequently, these trap levels, which are related to native defects in BaInS layers, are believed to limit PC intensity with decreasing temperature. [ABSTRACT FROM AUTHOR]

Six ternary compounds Pb A M ( A=S and Se; M=B, C and N) with a NaCl structure were calculated to study the structure, electronic, and magnetic properties of them. The calculations were performed using the first-principles plane wave pseudopotential method within the generalized gradient approximation. The calculations reveal that ferromagnetism can be realized for C- and N-doping while B substitution does not induce magnetism in PbS and PbSe systems. The total energy calculations show that the ferromagnetic state is more stable as compared to a nonmagnetic state at their equilibrium lattices. Spin-dependent electronic band structure, total, and partial densities of state calculations demonstrate that the 2 p-states of C- and N-dopants around Fermi level are responsible for ferromagnetism. Furthermore, equilibrium lattice constant, bond length, local magnetic moments, total magnetic moments, and robustness of ferromagnetism have been calculated. Particularly, the negative pressure calculations indicate that C-doping lead chalcogenides can change to half-metallic ferromagnetism materials. [ABSTRACT FROM AUTHOR]

Isothermal section of the Er-Co-In system at T = 870 K was constructed by means of X-ray powder diffraction, microstructure, and EDX-analyses. Twelve ternary compounds, namely ErCoIn (HoCoGa-type), ErCoIn (LuCoIn-type), ErCoIn (MgCuSn-type), ErCoIn (HoCoGa-type), ErCoIn (HoNiIn-type), ErCoIn (LuCoIn-type), ErCoIn, ErCoIn (NdPdIn-type), ErCoIn, ErCoIn (PrCoGa-type), ErCoIn (HoCoGa-type), and ErCoIn (LuCoIn-type) exist in the Er-Co-In system at this temperature. The crystal structure of the ErCoIn compound was determined by means of X-ray powder method (PrCoGa-type, P6 mc space group, a = 1.02374(2) nm, c = 0.68759(2) nm). Almost none of the binary compounds dissolve the third component. The exception is the existence of the solid solution based on ErCo binary compound, which dissolves up to 8 at.% of In. [Figure not available: see fulltext.] [ABSTRACT FROM AUTHOR]

We report the thermoelectric properties of Mn-doped CuMnSnSe compound, with x ranging from 0.005 to 0.1 at temperature ranging from 80 K to 723 K. All samples maintain cubic zincblende-like structure, and no impurity phase was detected. The electrical resistivity decreases rapidly when Mn replaces Sn in the matrix. The excess Mn impurities in the x = 0.05 and x = 0.1 samples also affect the Seebeck coefficient. The total thermal conductivity is increased for Mn-doped samples except for the x = 0.005 sample. In all, both power factor and figure of merit are improved by Mn doping over the entire temperature range. The ZT value of the x = 0.02 sample reaches 0.035 at 300 K, and for x = 0.01 reaches 0.41 at 716 K, which are comparable to the best thermoelectric performance for ternary Cu-based compounds. [ABSTRACT FROM AUTHOR]

The ternary compound Co6Al Si (ℇ phase) was prepared from the elements by arc melting and subsequent heat treatment, and then characterized by single-crystal X-ray diffraction (XRD), electron-probe microanalysis (EPMA), differential thermal analysis (DTA) and transmission electron microscopy (TEM). This new structure type consists of planar layers with the composition [Co6Al10Si4], which are penetrated by perpendicular (Si—Si—Al) chains. While the layers are well described by an orthorhombic model (space group Pnma, Pearson symbol oP46), the chains exhibit doubled periodicity, thus yielding a superstructure. Two alternative ordering models (space group Cmc21, oC184, and space group P21/ c, mP92) are presented and discussed based on XRD and TEM results. The (Si—Si—Al) chains are located in pentagonal antiprismatic `channels' which reveal the similarity of the Co6Al Si structure to Al-rich transition-metal compounds such as Co4Al13, Co2Al5, Fe4Al13, V7Al45, V4Al23 and VAl10, which also exhibit this type of pentagonal `channels' in their crystal structures. The phase shows only a very small homogeneity range. [ABSTRACT FROM AUTHOR]

We have created photosensitive heterostructures n-Ox/p-CuIn3Se5 for the first time. The synthesis process is based on thermal reaction of the ternary compound with atmospheric oxygen. We have studied the voltage-current characteristics and the photoconversion quantum efficiency spectra of the indicated structures. We discuss charge transport mechanisms and photosensitivity of the created structures. We show that n-Ox/p-CuIn3Se5 heterostructures can be used in designing solar cells and photoanalyzers for linearly polarized radiation. [ABSTRACT FROM AUTHOR]

Single crystals of the ternary compound CdGa2S4 have been grown from the melt by the Bridgman–Stockbarger method and their composition, structure, and electrophysical properties have been determined. From the crystals obtained, p‐GaSe/n‐CdGa2S4 heterostructures have been generated for the first time and their photoelectric properties in natural and linearly polarized light have been investigated. We determine the main parameters of the heterostructures and show that they can be used in photoprocessors of optical radiation. [ABSTRACT FROM AUTHOR]

Using the method of oriented crystallization of a melt (a vertical variant), we grew homogeneous single crystals of the ternary compounds CuIn3Se5 and CuGa3Se5. Photosensitive structures based on them were created for the first time, the spectral dependences of the relative quantum efficiency of the phototransformation of structures were investigated, and the energy gap width of the ternary compounds was determined. It is established that the CuIn3Se5 and CuGa3Se5 compounds are materials with direct interband transitions. We show that the structures created can be used as wide band photoconverters of natural radiation. [ABSTRACT FROM AUTHOR]

Cet article traite des études et réalisations de détecteurs HgCdTe pour télécommunications par fibres optiques, fonctionnant à 1,3 μm et à 1,55 μm en mode Pin ou avalanche. On décrit les propriétés générales et spécifiques de Valliage HgCdTe dans la gamme de composition utile, les méthodes de préparation et de caractérisation du matériau puis les technologies utilisées. Ensuite sont décrites les performances des différents types de diodes, les tests de fiabilité, les applications et perspectives. This paper deal with the studies and manufacture of HgCdTe detectors for fibre optics telecommunications, operating at 1,3 μm and 1,55 μm either with the Pin structure or with the avalanche mode. Electronic properties of the HgCdTe alloy with the appropriate composition range value, crystal growth methods, means of characterization of the materiel and process technology are described. Performances of the different types of diodes are reported, together with reliability tests, applications and prospects. [ABSTRACT FROM AUTHOR]

Germanium is considered as a potential anode material for sodium-ion batteries due to its fascinating theoretical specific capacity. However, its poor cyclability resulted from the sluggish kinetics and large volume change during repeated charge/discharge poses major threats for its further development. One solution is using its ternary compound as an alternative to improve the cycling stability. Here, high-purity CuGeO3 nanowires were prepared via a facile hydrothermal method, and their sodium storage performances were firstly explored. The as-obtained CuGeO3 delivered an initial charge capacity of 306.7 mAh g−1 along with favorable cycling performance, displaying great promise as a potential anode material for sodium ion batteries. [ABSTRACT FROM AUTHOR]

We synthesized polycrystalline samples of ternary compounds Ln2Co12P7 (Ln = Y, Pr, Nd, Sm, Gd and Dy) with the Curie temperature being about 150 K and measured magnetization to clarify magnetism of Co sublattice and also to clarify behavior of magnetic moments of Ln3+ in ferromagnetic phase. As a result, magnetism of Y2Co12P7 was found to be a possible weakly itinerant electronic ferromagnetism and found to be similar to that of Lu2Co12P7, indicating that magnetism of Co sublattice does not change with Ln. From results for Ln2Co12P7, we found that spin components of magnetic moments of Ln3+ ferromagnetically couple with exchange field of ferromagnetic moments of Co sublattice. This result means that behavior of magnetic moments of Ln3+ can be described as the single ion model applied to the permanent magnets (LnCo5, Ln2Fe14B etc.) though the sign of coupling constant is opposite of the cases of permanent magnets. This is because magnetic moments of Co and Ln couple through P, not a direct coupling in cases of permanent magnets. [ABSTRACT FROM AUTHOR]