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Система Hf-Re-Si при 1000°С.

Authors :
Зінько, Л.
Ничипорук, Г.
Гладишевський, Р.
Source :
Issues of Chemistry & Chemical Technology / Voprosy Khimii & Khimicheskoi Tekhnologii; Jun2023, Issue 3, p72-76, 5p
Publication Year :
2023

Abstract

The interaction of the components in the ternary system Hf-Re-Si was investigated by X-ray powder diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The isothermal section of the phase diagram at 1000°C was constructed in the full concentration range. The limits of solubility of Si in the binary compounds Hf<subscript>5</subscript>Re<subscript>24</subscript> and HfRe<subscript>2</subscript> were found to be 11 and 16 at.%, respectively. The existence of three ternary compounds was confirmed and their crystal structures were refined: HfReSi<subscript>2</subscript> (ZrCrSi<subscript>2</subscript>-type structure, space group Pbam, a=9.1271(3) Å, b=10.0356(4) Å, c=8.0708(3) Å), HfReSi (ZrNiAl-type structure, space group P-62m, a=6.9240(2) Å, c=3.3890(1) Å) and -phase Hf<subscript>9+x</subscript>Re<subscript>4-x</subscript>Si (Hf<subscript>9</subscript>Mo<subscript>4</subscript>B-type structure, space group P6<subscript>3</subscript>/mmc, a=8.5835(12) Å, c=8.7135(13) Å). The character of the interaction between the components in the Hf-Re-Si system and related ternary systems is briefly discussed. [ABSTRACT FROM AUTHOR]

Details

Language :
Ukrainian
ISSN :
03214095
Issue :
3
Database :
Complementary Index
Journal :
Issues of Chemistry & Chemical Technology / Voprosy Khimii & Khimicheskoi Tekhnologii
Publication Type :
Academic Journal
Accession number :
164775633
Full Text :
https://doi.org/10.32434/0321-4095-2023-148-3-72-76