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The luminescence properties of a GaN/A1[sub 0.1]Ga[sub 0.9]N double heterostructure grown by vapor-phase deposition from organometallic compounds are studied. When luminescence is observed from the end, the radiation intensity shows a sharply defined threshold dependence on the pump density. The threshold excitation density at T = 77 K was ∼40 kW/cm² and the wavelength of the stimulated emission was λ = 357 nm. The long-wavelength shift of the emission line at high pump densities may be attributed to renormalization of the band gap caused by manyparticle interactions in the electron-hole plasma. [ABSTRACT FROM AUTHOR]