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Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure.
- Source :
- Technical Physics Letters; Aug97, Vol. 23 Issue 8, p597, 3p
- Publication Year :
- 1997
-
Abstract
- The luminescence properties of a GaN/A1[sub 0.1]Ga[sub 0.9]N double heterostructure grown by vapor-phase deposition from organometallic compounds are studied. When luminescence is observed from the end, the radiation intensity shows a sharply defined threshold dependence on the pump density. The threshold excitation density at T = 77 K was ∼40 kW/cm² and the wavelength of the stimulated emission was λ = 357 nm. The long-wavelength shift of the emission line at high pump densities may be attributed to renormalization of the band gap caused by manyparticle interactions in the electron-hole plasma. [ABSTRACT FROM AUTHOR]
- Subjects :
- HETEROSTRUCTURES
LUMINESCENCE
ORGANOMETALLIC compounds
PHYSICS
Subjects
Details
- Language :
- English
- ISSN :
- 10637850
- Volume :
- 23
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Technical Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 7325866
- Full Text :
- https://doi.org/10.1134/1.1261764