1. Thickness dependent formation and properties of GdSi2/Si(100) interfaces.
- Author
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Petõ, G., Molnár, G., Dózsa, L., Horváth, Z. E., Horváth, Zs. J., Zsoldos, E., Dimitriadis, C. A., and Papadimitriou, L.
- Subjects
THIN films ,SOLID state electronics ,SILICON ,GADOLINIUM ,PHYSICS ,TRANSMISSION electron microscopy ,ELECTRON microscopy - Abstract
Epitaxial and polycrystalline orthorhombic GdSi
2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film . The most important property of these GdSi2 /Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance–voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 1010 cm-2 ), while the non-epitaxial growth induced defects of a much higher density (about 1012 cm-2 ). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi2 /Si interface. [ABSTRACT FROM AUTHOR]- Published
- 2005
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