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Lateral growth of titanium silicide over a silicon dioxide layer.
- Source :
- Journal of Applied Physics; Apr1983, Vol. 54 Issue 4, p2114-2115, 2p
- Publication Year :
- 1983
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 54
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 72870609
- Full Text :
- https://doi.org/10.1063/1.332265