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Lateral growth of titanium silicide over a silicon dioxide layer.

Authors :
Révész, P.
Gyimesi, J.
Pogány, L.
Petõ, G.
Source :
Journal of Applied Physics; Apr1983, Vol. 54 Issue 4, p2114-2115, 2p
Publication Year :
1983

Details

Language :
English
ISSN :
00218979
Volume :
54
Issue :
4
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
72870609
Full Text :
https://doi.org/10.1063/1.332265