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Wet thermal oxidation of AlAsSb was investigated. The oxidation kinetics was studied as a function of temperature and oxidation duration. An expression to allow accurate determination of the oxide depth for any temperature and time was established. Secondary ion mass spectrometry profiles and x-ray diffraction were used to demonstrate that an interfacial layer, composed of pure Sb and As and textured on InP, is formed during the oxidation process. [ABSTRACT FROM AUTHOR]

Phosphorus diffusion and its distribution during the solid-state reactions between Ni0.9Pt0.1 and implanted Si substrates are studied. Silicidation is achieved through a first rapid thermal annealing followed by a selective etching and a direct surface annealing. The redistribution of phosphorus in silicide layers is investigated after the first annealing for different temperatures and after the second annealing. Phosphorus concentration profiles obtained thanks to time of flight secondary ion mass spectrometry and atom probe tomography characterizations for partial and total reactions of the deposited 7 nm thick Ni0.9Pt0.1 film are presented. Phosphorus segregation is observed at the Ni0.9Pt0.1 surface and at Ni2Si interfaces during Ni2Si formation and at the NiSi surface and the NiSi/Si interface after NiSi formation. The phosphorus is evidenced in low concentrations in the Ni2Si and NiSi layers. Once NiSi is formed, a bump in the phosphorus concentration is highlighted in the NiSi layer before the NiSi/Si interface. Based on these profiles, a model for the phosphorus redistribution is proposed to match this bump to the former Ni2Si/Si interface. It also aims to bind the phosphorus segregation and its low concentration in different silicides to a low solubility of phosphorus in Ni2Si and in NiSi and a fast diffusion of phosphorus at their grain boundaries. This model is also substantiated by a simulation using a finite difference method in one dimension. [ABSTRACT FROM AUTHOR]

In this study, TiN/La2O3/HfSiON/SiO2/Si gate stacks with thick high-k (HK) and thick pedestal oxide were used. Samples were annealed at different temperatures and times in order to characterize in detail the interaction mechanisms between La and the gate stack layers. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements performed on these samples show a time diffusion saturation of La in the high-k insulator, indicating an La front immobilization due to LaSiO formation at the high-k/interfacial layer. Based on the SIMS data, a technology computer aided design (TCAD) diffusion model including La time diffusion saturation effect was developed. [ABSTRACT FROM AUTHOR]

A multi-residue method was developed for monitoring antibiotic residues in milk using liquid chromatography coupled to a tandem quadrupole mass spectrometer (LC/MS-MS). Two very short extractions followed by two LC/MS-MS acquisitions allowed the screening of 58 antibiotics belonging to eight different families (penicillins, cephalosporins, sulfonamides, macrolides, lincosamides, aminoglycosides, tetracyclines, and quinolones). This method is currently implemented in the laboratory in a qualitative way, i.e. monitoring the presence or absence of residue in a sample and identification of the analyte before the confirmation step. In order to assess the performance of this method, a validation strategy described in an internal guideline for the validation of screening methods was applied. The aim of the validation was to prove sufficient sensitivity of the method to detect all the targeted antibiotics at the level of interest (maximum residue limit, MRL) at least. According to European Commission Decision 2002/657/EC, the suitable sensitivity of a screening method can be demonstrated when the CCβ is below or equal to the MRL and so the false-compliant rate below or equal to 5% at the MRL level. The validation scheme was established in order to take into account various variability factors: the apparatus response, the interday repeatability, the matrix effect, etc. The results of the validation clearly demonstrate the suitability of this method for the detection and identification of more than 50 antibiotics and they are in agreement with the results obtained in routine analysis. [ABSTRACT FROM AUTHOR]

Atom probe tomography was used to study the redistribution of platinum and arsenic atoms after Ni(Pt) silicidation of As-doped polycrystalline Si. These measurements were performed on a field-effect transistor and compared with those obtained in unpatterned region submitted to the same process. These results suggest that Pt and As redistribution during silicide formation is only marginally influenced by the confinement in microelectronic devices. On the contrary, there is a clear difference with the redistribution reported in the literature for the blanket wafers. Selective etching used to remove the non-reacted Ni(Pt) film after the first rapid heat treatment may induce this difference. [ABSTRACT FROM AUTHOR]

Demonstrates GaAs-AlGaAs multiquantum wells (MQW) long range disordering through isoelectronic antimony implants. Implant damage in GaAs-AlGaAs MQW; Use of secondary ion mass and photoluminescence spectroscopy in monitoring the disordering; Defects of the implantation process and annealing treatments.

The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing, it is shown that a 2-Å thick Al layer completely diffuses into oxide layers, while a positive VTH shift is measured. On the contrary, for thicker Al layers, Al precipitation in the metal gate stack is observed and the VTH shift becomes negative. [ABSTRACT FROM AUTHOR]

Unlike GaAs which is p type, InP, when doped with the amphoteric C, is known to exhibit n-type conduction but with a low carrier-to-dopant ratio. To learn more about C behavior, we have intentionally introduced atomic H in C-doped n-InP by exposing the samples to a radio-frequency deuterium plasma. We show here that C, unlike other n dopants (S, Sn, and Si), strongly interacts with H in InP. First, the distribution of deliberately introduced H closely follows that of C. Second, for all C dopings studied here, the H concentration is nearly equal to that of C. Finally, and most importantly, the electrical properties of the material are also significantly altered, for instance, the free-electron concentration increases by more than an order of magnitude in certain samples. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

A detailed study on the optical quality of atmospheric pressure metalorganic vapor phase epitaxy grown GaAs[sub (1-x)]N[sub x] epilayers (on GaAs substrates) in which the N incorporation is accomplished using dimethylhydrazine precursor is reported. We show here that the poor optical quality of these as-grown layers can be significantly improved by carefully planned post-growth heat treatments. Optical data are presented to demonstrate unambiguously that such treatments affect in no way the physical properties of these metastable layers (no phase separation) and that the improvement of their optical quality is closely connected to the incorporation behavior of N in this growth method. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]