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Evidence of hydrogen–carbon interactions in plasma hydrogenated carbon-doped n-InP.
- Source :
- Applied Physics Letters; 5/18/1998, Vol. 72 Issue 20, 1 Chart, 3 Graphs
- Publication Year :
- 1998
-
Abstract
- Unlike GaAs which is p type, InP, when doped with the amphoteric C, is known to exhibit n-type conduction but with a low carrier-to-dopant ratio. To learn more about C behavior, we have intentionally introduced atomic H in C-doped n-InP by exposing the samples to a radio-frequency deuterium plasma. We show here that C, unlike other n dopants (S, Sn, and Si), strongly interacts with H in InP. First, the distribution of deliberately introduced H closely follows that of C. Second, for all C dopings studied here, the H concentration is nearly equal to that of C. Finally, and most importantly, the electrical properties of the material are also significantly altered, for instance, the free-electron concentration increases by more than an order of magnitude in certain samples. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- DOPED semiconductors
HYDROGENATION
DEUTERIUM
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 72
- Issue :
- 20
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4872792
- Full Text :
- https://doi.org/10.1063/1.121420