1. Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers.
- Author
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Jovanovic, V. D., Höfling, S., Indjin, D., Vukmirovic, N., Ikonic, Z., Harrison, P., Reithmaier, J. P., and Forchel, A.
- Subjects
SEMICONDUCTOR doping ,GALLIUM arsenide ,QUANTUM theory ,ELECTRON transport ,PHYSICS - Abstract
A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAs/AlGaAs quantum cascade lasers is presented. The employed theoretical model of electron transport was based on a fully nonequilibrium self-consistent Schrödinger-Poisson analysis of the scattering rate and energy balance equations. Three different devices with injector sheet doping densities in the range of (4–6.5)×10
11 cm–2 have been grown and experimentally characterized. Optimized arsenic fluxes were used for the growth, resulting in high-quality layers with smooth surfaces and low defect densities. A quasilinear increase of the threshold current with sheet injector doping has been observed both theoretically and experimentally. The experimental and calculated current-voltage characteristics are in a very good agreement. A decrease of the calculated coupling constant of average electron temperature versus the pumping current with doping level was found. [ABSTRACT FROM AUTHOR]- Published
- 2006
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