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Laser-driven shock experiments were conducted at a synchrotron facility to investigate the dynamic response of polyurethane foam. These experiments were coupled to in situ x-ray imaging to radiograph foam deformations and to determine the propagation velocity of stress waves. To increase the amplitude and the duration of the pressure load generated by the laser–matter interaction, the front surface of the target was covered with a confining layer (water and BK7 glass). Preliminary calibration tests involving time-resolved velocity measurements were performed to calculate the ablation pressure on the front surface of foam samples. The calculated pressure loads were used as input data for hydrodynamic simulations, in which the foam is modeled using a homogeneous porous macroscopic model, and model predictions were compared with experimental results. A fair consistency was found for most experiments, while for the others, an overestimation of the applied pressure is suspected, likely due to a laser breakdown within the confining medium. Finally, post-shot x-ray tomography of the recovered samples showed permanent deformation of the foam, unlike what was observed under quasi-static compression, and revealed heavy damage in the vicinity of the loaded zone. [ABSTRACT FROM AUTHOR]

The last missing piece of the puzzle for the full functionalization of group IV optoelectronic devices is a direct bandgap semiconductor made by CMOS compatible technology. Here, we report on the fabrication of GeSn alloys with Sn concentrations up to 4.5% using ion implantation followed by millisecond-range explosive solid phase epitaxy. The n-type single crystalline GeSn alloys are realized by co-implantation of Sn and P into Ge. Both the activation of P and the formation of GeSn are performed during a single-step flash lamp annealing for 3 ms. The bandgap engineering in GeSn as a function of the doping level and Sn concentration is theoretically predicted by density functional theory and experimentally verified using ellipsometric spectroscopy. We demonstrate that both the diffusion and the segregation of Sn and P atoms in Ge are fully suppressed by millisecond-range nonequilibrium thermal processing. [ABSTRACT FROM AUTHOR]

X-ray Absorption Fine Structure (XAFS) techniques, namely, X-ray Near Edge Structure (XANES), Extended XAFS (EXAFS), and Anomalous X-ray Diffraction (AXRD) were used to investigate the local atomic and electronic structure of (Ga, Mn)N magnetic layers with Mn concentrations of up to 10% grown by Molecular Beam Epitaxy. The XANES and AXRD analysis prove the Mn incorporation on substitutional GaN lattice sites. EXAFS results indicate the good quality of the structure under examination, although 0.5 nitride atom vacancies were found. The Wien2k code was applied to interpret the XANES spectra quantitatively, i.e., to determine the electronic structure of the Mn atoms. It was shown that accounting for the core-hole effect is necessary to reconstruct effectively the XANES spectra. Conducted charge density analysis based on DFT calculations identified the valency of Mn atom to be of 2.4+. [ABSTRACT FROM AUTHOR]

Small angle x-ray scattering (SAXS) is a well established technique to detect nanometer scale structures in matter. In a typical setup, this diagnostic uses a detector with a direct line of sight to the scattering target. However, in the harsh environment of high intensity laser interaction, intense secondary radiation and high-energy particles are generated. Such a setup would therefore suffer a significant increase of noise due to this background, which could eventually prevent such measurements. In this paper, we present a novel tool consisting of a mosaic graphite crystal that works as a mirror for the SAXS signal and allows us to position the detector behind appropriate shielding. This paper studies the performance of this mirror both by experiment at the European XFEL (X-Ray Free-Electron Laser Facility) laboratory and by simulations. [ABSTRACT FROM AUTHOR]

It is demonstrated that both the nucleation field and the irreversible switching field of Sm2Co7/Fe exchange spring bilayers is decreased by means of 10 keV He ion irradiation. The reduction is attributed to interfacial mixing and irradiation induced softening of the hard magnetic layer. By lowering the energy to 0.8 keV the ions do not penetrate the hard magnetic layer and, consequently, no softening is observed. However, although irradiation induced interfacial mixing is still present it is not large enough to create a graded interface layer and the nucleation field decreases. In contrast, conventional annealing under appropriate conditions leads to an increase in the nucleation field. This distinct discrepancy can be explained by detailed investigation of the layer structure by x-ray reflectivity measurements. [ABSTRACT FROM AUTHOR]

A comprehensive characterization of the structural and magnetic properties of Fe-implanted rutile TiO2(110) is presented. Fe and FeTiO3 (ilmenite) nanocrystals (NCs) are identified by synchrotron-radiation x-ray diffraction. The majority of Fe NCs are crystallographically oriented with respect to the matrix following the relation Fe(001)[010]∥TiO2(110)[11_0]. Postannealing induced the out-diffusion of Fe and the growth of FeTiO3 at the cost of Fe NCs. Mössbauer spectroscopy and superconducting quantum interference device (SQUID) magnetometry reveal the corresponding evolution of magnetic properties, i.e., magnetization, and superparamagnetic blocking temperature. We unambiguously identify Fe NCs as the origin of the ferromagnetism. These Fe NCs possess a uniaxial in-plane magnetic anisotropy, such that the two Fe[100] axes are inequivalent. [ABSTRACT FROM AUTHOR]

We show that metallic secondary phase formation inside ZnO(0001) single crystals implant-doped with Ni at an atomic concentration of 5% can be suppressed. All the Ni ions are in the 2+ valence state after mild postannealing. The suppression is achieved by means of annealing of the crystals in high vacuum prior to implantation and is correlated with the introduction of structural disorder. The observed ferromagnetic properties of the preannealed crystals are evidently induced by defects and not primarily by the Ni doping. They degrade at ambient temperature within several days. [ABSTRACT FROM AUTHOR]

A method to study temperature dependent thickness variation of thin films has been developed based on angle and energy dispersive x-ray reflectivity (EDR) techniques. The data analysis scheme developed for this method combines both energy and angle dispersive x-ray reflectivity (ADR) profiles. The ADR technique provides the electron density profile on an absolute scale and the EDR technique facilitates rapid collection of reflectivity data as a function of temperature. We demonstrate the utility of the developed method with results of a study of thermal expansion of single and bilayer polymer films. We could detect a change of the thickness of the film in angstroms and could demonstrate interplay of negative and positive thermal expansions of dissimilar polymer layers in determining density profiles of polymer–polymer interface as a function of temperature. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

It will be reported about the effect of the sputtering gases, Ar and Xe, on FePt clusters formation by magnetron sputtering deposition at high working pressures. All layers, with bulk equivalent thicknesses between 3 to 5 nm, were realized at RT by a sequential layer by layer deposition or a co-deposition of Fe and Pt. After rapid thermal annealing at 500 °C, the highest L10 fraction was found using Xe as sputtering gas: Xe decreases the transformation activation energy and therefore, reduces the critical thickness necessary to obtain the high anistropic ferromagnetic phase. Ar assisted growths lead to FePt clusters in the L10 phase only if the sequential layer deposition is used, whereas for Xe no differences in the deposition techniques were observed. [ABSTRACT FROM AUTHOR]

Using synchrotron x-ray diffraction and reflectivity, we studied the transition from the paramagnetic NiMn phase to the chemically ordered, antiferromagnetic L10 phase of NiMn/Fe19Ni81 thin films deposited on a Si/SiO2 substrate as a function of the annealing temperature. The transformation to a dominating L10-ordered NiMn film takes place between 300 and 400 °C irrespective of the irradiation. This is also consistent with magnetization reversal measurements of the corresponding permalloy layers. The benefit of the ion irradiation is a reduction of the mosaicity for both the NiMn and the permalloy film, and a smoothening of internal interfaces. [ABSTRACT FROM AUTHOR]

In this paper, we analyze the correlation of the magnetism and the carrier concentration with the shift of the spectroscopic critical points for low compensated GaMnAs samples with a high Curie temperature of around 150 K. The GaMnAs layers were grown by low-temperature molecular beam epitaxy. The low-temperature annealing leads to a reduction of Mn interstitials from 0.8 to 0.4% and an enhancement in the hole concentration. The saturation magnetization is 51 emu/cm $$^3$$ and the Curie temperature is 150 K after post-growth annealing, while those of as-grown layers are 37 emu/cm $$^3$$ and 80 K. The resistivity dropped significantly after the post-growth annealing, due to the fact that the number of Mn $$_I$$ , which act as double donors and compensate holes, was significantly reduced by the low-temperature and long-time annealing. The electronic band structure is investigated by spectroscopic ellipsometry. The transition energies of critical points show redshift after post-growth annealing due to the annealing-induced enhancement of the hole concentration. Our results support the valence band picture (the Zener model) in ferromagnetic GaMnAs. [ABSTRACT FROM AUTHOR]

Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(15 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr effect (MOKE) measurements and MOKE microscopy. With increasing ion fluence, the coercivity as well as Kerr rotation decreases. A threshold ion fluence has been identified, where ferromagnetism of the Ni layer is lost at room temperature and due to Si incorporation into the Ni layer, a NiSi alloy layer is formed. This fluence was used in FIB irradiation of parallel 50 nm wide stripes, leaving 1 µm wide unirradiated stripes in between. MOKE microscopy on this FIB-patterned sample has revealed interacting magnetic domains across several stripes. Considering shape anisotropy effects, which would favour an alignment of magnetization parallel to the stripe axis, the opposite behaviour is observed. Magneto-elastic effects introducing a stress-induced anisotropy component oriented perpendicular to the stripe axis are the most plausible explanation for the observed behaviour. [ABSTRACT FROM AUTHOR]

An FeRh thin film of 33 nm thickness grown by molecular beam epitaxy (MBE) has been investigated with respect to its temperature dependent magnetic properties by means of ferromagnetic resonance (FMR). Within the ferromagnetic regime, that is at temperatures above the antiferromagnetic-to-ferromagnetic phase transition, the resonance field decreases with decreasing temperature reflecting an increasing magnetization. Within the temperature regime of the phase transition, the resonance field behaves non-monotonically, that is it suddenly increases with decreasing temperature. The observed asymmetric shape of the FMR absorption line is discussed with respect to a possible small magnetic inhomogeneity of the film coupled to the main ferromagnetic volume of B2 ordered, equiatomic FeRh. [ABSTRACT FROM AUTHOR]

An all-electrical method is presented to determine the exchange constant of magnetic thin films using ferromagnetic resonance. For films of 20 nm thickness and below, the determination of the exchange constant A, a fundamental magnetic quantity, is anything but straightforward. Among others, the most common methods are based on the characterization of perpendicular standing spin-waves. These approaches are however challenging, due to (i) very high energies and (ii) rather small intensities in this thickness regime. In the presented approach, surface patterning is applied to a permalloy (Ni80Fe20) film and a Co2Fe0.4Mn0.6Si Heusler compound. Acting as a magnonic crystal, such structures enable the coupling of backward volume spin-waves to the uniform mode. Subsequent ferromagnetic resonance measurements give access to the spin-wave spectra free of unquantifiable parameters and, thus, to the exchange constant A with high accuracy. [ABSTRACT FROM AUTHOR]

The fabrication of regularly ordered Ge quantum dot arrays on Si surfaces usually requires extensive preparation processing, ensuring clean and atomically ordered substrates, while the ordering parameters are quite limited by the surface properties of the substrate. Here, we demonstrate a simple method for fabrication of ordered Ge quantum dots with highly tunable ordering parameters on rippled Si surfaces. The ordering is achieved by magnetron sputter deposition, followed by an annealing in high vacuum. We show that the type of ordering and lattice vector parameters of the formed Ge quantum dot lattice are determined by the crystallographic properties of the ripples, i.e., by their shape and orientation. Moreover, the ordering is achieved regardless the initial amorphisation of the ripples surface and the presence of a thin oxide layer. [ABSTRACT FROM AUTHOR]

We present the formation of an ordered three-dimensional lattice of Ni nanocrystals in an amorphous alumina matrix by a self-assembly process. The self-assembled growth achieved by single-step magnetron sputtering deposition of a Ni/AlO multilayer is driven by surface morphology effects. The influence of the Ni layer thickness on the Ni particle size, separation, and quality of ordering is examined. The quality of Ni nanoparticles ordering in alumina is compared to their ordering in a silica matrix. The obtained results are important for the understanding of the self-assembly process of metallic particles in amorphous matrices and the applications of such materials. [ABSTRACT FROM AUTHOR]

This article reports on surface density variations that are accompanied by ion-beam-induced pattern formation processes on Si. The density profiles perpendicular to Si(100) surfaces were investigated after off-normal implantation with 5 keV Fe+ ions at fluences ranging from 1 × 1016 to 5 × 1017 ions cm−2. Ripple formation was observed for ion fluences above 1 × 1016 ions cm−2. X-ray reflectivity (XRR) revealed the formation of a nanometre subsurface layer with incorporated Fe. Using XRR, no major dependence of the surface density on the ion fluence could be found. In order to improve the surface sensitivity, extremely asymmetric X-ray diffraction was applied. Depth profiling was achieved by measuring X-ray rocking curves as a function of the decreasing incidence angle down to 0° using this noncoplanar scattering geometry. The density information was extracted from the dynamical Bragg shift of the diffraction peak caused by refraction of the X-ray beam at the air-sample interface. Simulations based on the dynamical theory of X-ray diffraction revealed a decrease of density for increasing ion fluence in a region close to the surface, caused by the amorphization and surface roughening. [ABSTRACT FROM AUTHOR]

In this article, we show how to produce materials consisting of regularly ordered Ge quantum dot lattices in an amorphous alumina matrix with a controllable Ge quantum dot size, shape, spacing, crystalline structure, and degree of regularity in their ordering. The production of such materials is achievable already at room temperature by magnetron sputtering deposition of a (Ge + AlO)/AlO multilayer. The materials show photoluminescence in the visible and ultraviolet light range, a size-dependent blue shift of the photoluminescence peak and an enhancement of its intensity by size reduction, indicating the quantum dot origin of the photoluminescence. The materials also exhibit excellent mechanical properties due to the alumina matrix. Their internal structure is shown to be highly resistive to irradiation with energetic particles for a large range of the irradiation parameters. [ABSTRACT FROM AUTHOR]

57Fe doped titanium oxide monocrystals, prepared by ion implantation at different temperatures and subsequent thermal treatment, were characterized by conversion electron Mössbauer spectrometry, synchrotron radiation x-ray diffraction and superconducting quantum interference device magnetometry. After implantation at room temperature Fe is present in divalent state. Upon annealing in high vacuum Fe2 + is reduced to metallic Fe for the most part. After implantation at 623 K most iron is in metallic state. During annealing on air Fe is gradually oxidized from Fe2 + to Fe3 + . Depending on preparation conditions and thermal treatment the role of different nanosized secondary phases is discussed in terms of their influence on the magnetic properties of Fe:TiO2. α-Fe nanoparticles are found to be responsible for ferromagnetism observed in TiO2. [ABSTRACT FROM AUTHOR]

AlxGa1-xAs grown on GaAs is known to be almost perfectly lattice matched with a maximum lattice mismatch of 0.14% at room temperature and even less at temperatures of 700 °C-800 °C. However, as layer structures for edge-emitting diode lasers exhibit an increasing overall thickness of several microns of AlxGa1-xAs, e.g., diode lasers comprising a super-large optical cavity, the accumulated elastic strain energy increases as well. Depending on the growth temperature the formation energy of dislocations can be reached, which is limiting the pseudomorphic growth. In this regard, the thermal expansion coefficient difference between layer and substrate is an important parameter. We utilize in situ curvature measurements during growth of AlxGa1-xAs by metal-organic vapour phase epitaxy to determine the thermal expansion coefficient α. The curvature change with increasing layer thickness, as well as with wafer temperature at constant layer thickness is used to assess α. This is compared to ex situ temperature dependent X-ray diffraction measurements to obtain α. All determined values for α are in good agreement, yielding αAlAs=4.1×10-6 K-1 for a given GaAs linear thermal expansion coefficient of αGaAs=5.73×10-6 K-1. [ABSTRACT FROM AUTHOR]

We report on the formation of a regularly ordered void lattice with a void size of about 4 nm in an alumina matrix. The voids were formed by thermal treatment of a well-ordered three-dimensional Ge quantum dot lattice formed earlier by self-assembled growth in an alumina matrix during magnetron sputtering codeposition of Ge+Al2O3. During the subsequent annealing the germanium atoms were lost from the film and so voids were produced. The positions of the voids are ordered in the same way as the Ge quantum dots that were present before annealing, while their sizes can be controlled by the deposition parameters. [ABSTRACT FROM AUTHOR]

We report on structural properties and charge trapping in [(Ge+SiO2)/SiO2]×2 films deposited by magnetron sputtering on a periodically corrugated-rippled substrate and annealed in vacuum and forming gas. The rippled substrate caused a self-ordered growth of Ge quantum dots, while annealing in different environments enabled us to separate charge trapping in quantum dots from the trapping at the dot-matrix and matrix-substrate interfaces. We show that the charge trapping occurs mainly in Ge quantum dots in the films annealed in the forming gas, while Si-SiO2 interface trapping is dominant for the vacuum annealed films. [ABSTRACT FROM AUTHOR]

The formation of secondary phases in Fe implanted GaN upon annealing in low pressure N2-atmosphere was detected by means of in situ x-ray diffraction and confirmed by magnetization measurements. A repeatable phase change from Fe3N at room temperature and Fe3-xN at 1023 K was observed in situ. The phase transformation is explained by the change of lattice site and concentration of nitrogen within nitrides. The diffusion of Fe toward sample surface and oxidation with increasing annealing cycles limits the availability of secondary phase and hence the repeatability. At high temperature GaN dissolves and Ga as well as Fe oxidize due to presence of residual oxygen in the process gas. The ferromagnetism in the samples is related to nanometer sized interacting Fe3-xN crystallites. [ABSTRACT FROM AUTHOR]

During ion sputtering of GaSb(100) surfaces a transient behavior from initial smoothing to roughening accompanied by self-organized pattern formation has been observed using in situ x-ray reflectivity and grazing incidence small angle scattering. The induced patterns show hexagonally ordered nanodot arrays with a spatial periodicity of 30 nm. The correlation length of the pattern increases with ion fluence. In the framework of the Bradley–Harper model [R. M. Bradley and J. M. E. Harper, J. Vac. Sci. Technol. A 6, 2390 (1988)], where the dot pattern formation results from an interplay of surface roughening due to sputtering and surface smoothing due to diffusion, the initial smoothing behavior is explained by the same surface diffusion processes as the pattern formation. [ABSTRACT FROM AUTHOR]

We present an experiment for the creation of unconventional ferromagnetism in pure ZnO powder by application of mechanical force. The ferromagnetism is related to flakelike structures in planar compressed pieces of the powder with easy axis in the plane. It is associated with defect creation and disappears upon annealing in oxygen. Besides cluster formation, such defects might be one of the nonintrinsic origins of ferromagnetism in transition metal doped ZnO. [ABSTRACT FROM AUTHOR]

Using grazing-incidence x-ray scattering technique the authors have investigated the evolution of the damage profile of the transition layer between the ion-induced ripplelike pattern on top surface and the ripples at buried crystalline interface in silicon created after irradiation with 60 keV Ar+ ions under 60°. The transition layer consists of a defect-rich crystalline part and a complete amorphous part. The crystalline regions are highly strained but relaxed for low dose and high dose irradiations, respectively. The appearance of texture in both cases shows that the damage of the initial crystalline structure by the ion bombardment takes place along particular crystallographic directions. [ABSTRACT FROM AUTHOR]

Intersubband relaxation dynamics in InGaAs/AlAsSb multiquantum wells (QWs) is studied by single-color femtosecond pump-probe measurements. At early delay times, all samples show an exponential decay of the transient transmission occurring with time constants of the order of a picosecond. The relaxation dynamics at later delay times strongly depend on both QW thickness and doping location. A non-single-exponential decay behavior indicates extra competing relaxation channels, as further confirmed by solving three-level rate equations. It is shown that slowly decaying components are due to electron transfer to states related to indirect valleys in the wells or in the barriers. [ABSTRACT FROM AUTHOR]

We investigate the transient recombination and transfer properties of nonequilibrium carriers in an In0.16Ga0.84As/GaAs quantum well (QW) with an additional lateral confinement implemented by a patterned stressor layer. The structure thus contains QW- and quantum-wire-like areas. At low excitation densities, photoluminescence (PL) transients from both areas are well described by a rate equation model for a three-level system with a saturable interlevel carrier transfer representing the lateral drift of carriers from the QW regions into the wires. Small-signal carrier lifetimes for QW, wires, and transfer time from QW to wire are 180, 190, and 28 ps, respectively. For high excitation densities the time constants of the observed transients increase, in agreement with the model. In addition, QW and wire PL lines merge indicating a smoothening of the potential difference, i.e., the effective carrier confinement caused by the stressor structure becomes weaker with increasing excitation. [ABSTRACT FROM AUTHOR]

Focused ion beam techniques are one way to modify locally the properties of magnetic thin films. We report on structural investigations of 50 nm thick non-ordered nano-crystalline Permalloy (Ni81Fe19) films modified by 30 keV Ga+ focused ion beam (FIB) irradiation. From the x-ray diffraction (XRD) measurements a considerable crystallite growth and a material texturing towards (111)-direction with a linearly increasing lattice constant was observed. In addition, cross-sectional transmission electron microscope (XTEM) images show that crystallites are growing through the entire film at high irradiation fluences. Extended x-ray absorption fine structure (EXAFS) analysis shows a perfect near-order coordination corresponding to a face-centered (fcc) unit cell for both Fe, Ni and Ga atom surrounding. The structural changes are accompanied by a decrease of saturation polarization with increasing ion fluence. Such a behavior is attributed to the incorporation of non-magnetic Ga atoms in the Permalloy film. [ABSTRACT FROM AUTHOR]

In this work, the influence of air pressure during the annealing of Ge quantum dot (QD) lattices embedded in an amorphous Al2O3 matrix on the structural, morphological and compositional properties of the film is studied. The formation of a regularly ordered void lattice after performing a thermal annealing process is explored. Our results show that both the Ge desorption from the film and the regular ordering of the QDs are very sensitive to the annealing parameters. The conditions for the formation of a void lattice, a crystalline Ge QD lattice and a disordered QD lattice are presented. The observed effects are explained in terms of oxygen interaction with the Ge present in the film. [ABSTRACT FROM AUTHOR]

We report on the fabrication of pseudomorphic wurtzite Ga1-xMnxN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering, the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, and no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm3. [ABSTRACT FROM AUTHOR]

A correction to the abstract of the article titled "An easy mechanical way to create ferromagnetic defective ZnO" in the previous issue is presented.

A correction to the article "An easy mechanical way to create ferromagnetic defective ZnO" in the 2008 issue is presented.

The strain distribution of a lateral nanostructure containing an InGaAs single quantum well (SQW) is studied by depth-resolved high-resolution x-ray grazing-incidence diffraction. The lateral strain variation is realized by patterning of an initially tensily strained InGaP stressor grown on top of the compressively strained SQW. The finite element method (FEM) is applied to the analysis of the strain distribution within the SQW induced by strain relaxation of the stressor layer. In particular, it is shown that the strain field reaches a maximum beneath the valleys and varies with the valley width. Based on the distorted wave Born approximation the experimental x-ray scattering curves were simulated using the displacements calculated by FEM as an input. We found a rather good agreement between simulation and experiment. [ABSTRACT FROM AUTHOR]

Fraunhofer patterns of a 5 μm entrance pinhole were detected at the white-beam bending-magnet beamline at BESSY II. Using an energy-dispersive detector the Fraunhofer fringes could be recorded simultaneously between 5

The strain distribution of a lateral nanostructure containing an InGaAs single quantum well (SQW) is studied by depth-resolved high-resolution x-ray grazing-incidence diffraction. The lateral strain variation is realized by patterning of an initially tensily strained InGaP stressor grown on top of the compressively strained SQW. The finite element method (FEM) is applied to the analysis of the strain distribution within the SQW induced by strain relaxation of the stressor layer. In particular, it is shown that the strain field reaches a maximum beneath the valleys and varies with the valley width. Based on the distorted wave Born approximation the experimental x-ray scattering curves were simulated using the displacements calculated by FEM as an input. We found a rather good agreement between simulation and experiment. [ABSTRACT FROM AUTHOR]

Fraunhofer patterns of a 5 μm entrance pinhole were detected at the white-beam bending-magnet beamline at BESSY II. Using an energy-dispersive detector the Fraunhofer fringes could be recorded simultaneously between 5