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This work investigates the vibrational and electrical properties of molybdenum trioxide (α-MoO3) upon tensile strain applied along different crystal directions. Using a three-point bending setup in combination with Raman spectroscopy, we report measurements of a blueshift of the Raman modes when uniaxial tensile strain is applied along the a- and c-axis to this material. Furthermore, the electrical measurements reveal an increase in resistance with strain applied along both in-plane directions. The findings from the uniaxial strain and Raman spectroscopy measurements are further confirmed by ab-initio calculations. This study provides valuable insights into the mechanical and vibrational properties of α-MoO3 and its potential use in several applications. This study contributes to the growing body of knowledge on the properties of α-MoO3 and lays the foundation for further exploration of its potential applications. Given MoO3 holding the natural hyperbolic phonon polaritons, attracting significant research interest, this study has the potential to arouse the curiosity of the scientific community. [ABSTRACT FROM AUTHOR]

We present a method to fabricate handcrafted thermoelectric devices on standard office paper substrates. The devices are based on thin films of WS2, Te, and BP (P‐type semiconductors) and TiS3 and TiS2 (N‐type semiconductors), deposited by simply rubbing powder of these materials against paper. The thermoelectric properties of these semiconducting films revealed maximum Seebeck coefficients of (+1.32 ± 0.27) mV K−1 and (−0.82 ± 0.15) mV K−1 for WS2 and TiS3, respectively. Additionally, Peltier elements were fabricated by interconnecting the P‐ and N‐type films with graphite electrodes. A thermopower value up to 6.11 mV K−1 was obtained when the Peltier element were constructed with three junctions. The findings of this work show proof‐of‐concept devices to illustrate the potential application of semiconducting van der Waals materials in future thermoelectric power generation as well as temperature sensing for low‐cost disposable electronic devices. [ABSTRACT FROM AUTHOR]

This work demonstrates the fabrication and characterization of single-layer MoS2 field-effect transistors using biodegradable albumen (chicken eggwhite) as gate dielectric. By introducing albumen as an insulator for MoS2 transistors high carrier mobilities (up to ~90 cm2 V−1 s−1) are observed, which is remarkably superior to that obtained with commonly used SiO2 dielectric which we attribute to ionic gating due to the formation of an electric double layer in the albumen MoS2 interface. In addition, the investigated devices are characterized upon illumination, observing responsivities of 4.5 AW−1 (operated in photogating regime) and rise times as low as 52 ms (operated in photoconductivity regime). The presented study reveals the combination of albumen with van der Waals materials for prospective biodegradable and biocompatible optoelectronic device applications. Furthermore, the demonstrated universal fabrication process can be easily adopted to fabricate albumen-based devices with any other van der Waals material. [ABSTRACT FROM AUTHOR]

A method is presented for scaling up the production of flakes of van der Waals materials via mechanical exfoliation. Using a roll‐to‐roll setup and an automatized, massive parallel exfoliation process, adhesive tapes with a high density of nanosheets of van der Waals materials are produced. The technique allows for obtaining a good trade‐off between large lateral size and excellent area scalability, while also maintaining low cost. The potential of the method is demonstrated through the successful fabrication of field effect transistors and flexible photodetectors in large batches. This low‐cost method to produce large area films out of mechanically exfoliated flakes is very general, and it can be applied to a variety of substrates and van der Waals materials and, moreover, it can be used to combine different van der Waals materials on top of each other. Therefore, it is believed that this production method opens an interesting avenue for fabrication of low‐cost devices while maintaining a good scalability and performance. [ABSTRACT FROM AUTHOR]

We present two approaches for fabricating shadow masks for the evaporation of electrodes onto nanomaterials. In the first one, we combine the use of a commercial fiber laser engraving system with readily available aluminum foil. This method is suitable for fabricating shadow masks with line widths of 50 µm and minimum feature separation of 20 µm, and using it to create masks with complex patterns is very straightforward. In the second approach, we use a commercially available vinyl cutting machine to pattern a vinyl stencil mask, and we use a glass fiber to define the separation between the electrodes. With this approach, we achieve well-defined electrodes separated by 15 µm, but this technique is less versatile in creating complex masks as compared with the laser-based one. We demonstrate the potential of these techniques by fabricating field-effect transistor devices based on MoS2. Our approach is a cost-effective and easily accessible method for fabricating shadow masks with high resolution and accuracy, making it accessible to a wider range of laboratories. [ABSTRACT FROM AUTHOR]

The use of inexpensive benchtop plotters in combination with refillable writing pens and markers as a powerful route to print nanomaterial‐based inks on paper substrates is studied. It is proved that this approach is very robust, it can be used to print inks of many different solution‐processable nanomaterials, and is very precise, allowing pattern features with pitch separation as narrow as 80 μm. The general character of this printing platform by printing van der Waals materials, organic semiconductors, hybrid perovskites and colloidal nanoparticles with a broad range of properties (from insulators to superconductors) is illustrated. The system is used to easily create several example applications such as an all‐printed, paper‐supported photodetector. This printing platform can be very helpful for research groups with a wealth of expertise in synthesis of solution‐processable nanomaterials but that lack the infrastructure, resources, and expertise to perform traditional inkjet printing for fast device prototyping. [ABSTRACT FROM AUTHOR]

Single-layer MoS2 produced by mechanical exfoliation is usually connected to thicker and multilayer regions. We show a facile laser trimming method to insulate single-layer MoS2 regions from thicker ones. We demonstrate, through electrical characterization, that the laser trimming method can be used to pattern single-layer MoS2 channels with regular geometry and electrically disconnected from the thicker areas. Scanning photocurrent microscope further confirms that in the as-deposited flake (connected to a multilayer area) most of the photocurrent is being generated in the thicker flake region. After laser trimming, scanning photocurrent microscopy shows how only the single-layer MoS2 region contributes to the photocurrent generation. The presented method is a direct-write and lithography-free (no need of resist or wet chemicals) alternative to reactive ion etching process to pattern the flakes that can be easily adopted by many research groups fabricating devices with MoS2 and similar two-dimensional materials. [ABSTRACT FROM AUTHOR]

Two-dimensional materials present exceptional crystal elasticity and provide an ideal platform to tune electrical and optical properties through the application of strain. Here we extend recent research on strain engineering in monolayer molybdenum disulfide using an adamantane plasma polymer pinning layer to achieve unprecedented crystal strains of 2.8%. Using micro-reflectance spectroscopy, we report maximum strain gauge factors of −99.5 meV/% and −63.5 meV/% for the A and B exciton of monolayer MoS2, respectively, with a 50 nm adamantane capping layer. These results are corroborated with photoluminescence and Raman measurements on the same samples. Taken together, our results indicate that adamantane polymer is an exceptional capping layer to transfer substrate-induced strain to a 2D layer and achieve higher levels of crystal strain. [ABSTRACT FROM AUTHOR]

The field emission (FE) properties of TiS3 nanosheets and nanoribbons, synthesized by direct sulfuration of bulk titanium, are investigated. The nanosheets show an enhanced FE behavior with a low turn-on field of ∼0.3 V/μm, required for drawing an emission current density of ∼10 μA/cm2. Interestingly, the TiS3 nanosheet emitter delivered a large emission current density of ∼0.9 mA/cm2 at a relatively low applied electric field of ∼0.4 V/μm. We have estimated the values of the field enhancement factor (β), which are found to be ∼5 × 104 for the TiS3 nanosheet emitter and ∼4 × 103 for the nanoribbon emitter. We attribute the superior FE performance to the presence of atomically sharp edges and the reduced thickness of TiS3, as reflected in the high value of β. In fact, the nanosheet sample presents a higher density of ultrathin layers (∼12 nm-thick), and thus, they have a larger edge to volume ratio than the nanoribbon samples (which are ∼19 nm-thick). The superior FE behavior of TiS3 nanosheets over nanoribbons makes them a propitious field emitter and can be utilized for various FE-based applications, demanding large emission currents and lower operational voltages. Moreover, the FE current stability recorded on these samples confirms their promising performance. Thus, the present investigation brings out a great promise of TiS3 nanosheets and nanoribbons as field emitters for vacuum nanoelectronics devices. [ABSTRACT FROM AUTHOR]

This work presents an automated three‐point bending apparatus that can be used to study strain engineering and straintronics in 2D materials. This work benchmarks the system by reporting reproducible strain tuned micro‐reflectance, Raman, and photoluminescence spectra for monolayer molybdenum disulfide (MoS2). These results are in good agreement with reported literature using conventional bending apparatus. This work further utilizes the system to automate strain investigations of straintronic devices by measuring the piezoresistive effect and the strain effect on photoresponse in an MoS2 electrical device. The details of the construction of the straightforward system are given and it is anticipated that it can be easily implemented for study of strain engineering and straintronics in a wide variety of 2D material systems. [ABSTRACT FROM AUTHOR]

The field-effect control of the electrical and optical properties of two-dimensional (2D) van der Waals semiconductors (vdW) is one important aspect of this novel class of materials. Thanks to their reduced thickness and decreased screening, electric fields can easily penetrate in a 2D semiconductor and thus modulate their charge density and their properties. In literature, the field effect is routinely used to fabricate atomically thin field-effect transistors based on 2D semiconductors. Apart from the tuning of the electrical transport, it has been demonstrated that the field effect can also be used to modulate the excitonic optical emission of 2D transition metal dichalcogenides such as MoS2 or WSe2. In this paper, we present some recent experiments on the field-effect control of the optical and excitonic properties of the monolayer WS2. Using the deterministic transfer of van der Waals materials, we fabricate planar single-layer WS2 devices contacted by a gold electrode and partially sandwiched between two insulating hexagonal boron nitride (hBN) flakes. Thanks to the planar nature of the device, we can optically access both the hBN encapsulated and the unencapsulated WS2 regions and compare the field-effect control of the exciton population in the two cases. We find that the encapsulation strongly increases the range of tunability of the optical emission of WS2, allowing us to tune the photoluminescence emission from excitons-dominated to trions-dominated. We also discuss how the full encapsulation of WS2 with hBN helps reduce spurious hysteretic effects in the field-effect control of the optical properties, similar to what has been reported for 2D vdW field-effect transistors. [ABSTRACT FROM AUTHOR]

The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such as nanopillars provides a way to spatially modify the optical properties mainly through the localized strain. Similar studies to date have utilized insulating SiO2 nanopillars. Here, we combine monolayer MoS2 with free standing GaAs nanowires (NWs), in views of coupling their semiconducting properties. We find that monolayer MoS2 exhibits three different configurations: pierced, wrapped and tent-like. We demonstrate how to identify the configurations by optical microscopy and elucidate the impact on the vibrational and luminescence characteristics by confocal spectroscopy mapping. In particular, we highlight the increase of intensity and shift due to the photonic properties of nanowires and increase in dielectric screening associated with the GaAs NW. This work signifies the first step towards the use of vertical III-V NW arrays as a versatile platform for spatially engineering the optical properties of TMDs. [ABSTRACT FROM AUTHOR]

Layered metal chalcogenide materials are exceptionally appealing in optoelectronic devices thanks to their extraordinary optical properties. Recently, their application as flexible and wearable photodetectors have received a lot of attention. Herein, broadband and high-performance paper-based PDs were established in a very facile and inexpensive method by rubbing molybdenum disulfide and titanium trisulfide crystals on papers. Transferred layers were characterized by SEM, EDX mapping, and Raman analyses, and their optoelectronic properties were evaluated in a wavelength range of 405–810 nm. Although the highest and lowest photoresponsivities were respectively measured for TiS3 (1.50 mA/W) and MoS2 (1.13 μA/W) PDs, the TiS3–MoS2 heterostructure not only had a significant photoresponsivity but also showed the highest on/off ratio (1.82) and fast response time (0.96 s) compared with two other PDs. This advantage is due to the band offset formation at the heterojunction, which efficiently separates the photogenerated electron–hole pairs within the heterostructure. Numerical simulation of the introduced PDs also confirmed the superiority of TiS3–MoS2 heterostructure over the other two PDs and exhibited a good agreement with the experimental results. Finally, MoS2 PD demonstrated very high flexibility under applied strain, but TiS3 based PDs suffered from its fragility and experience a remarkable drain current reduction at strain larger than ± 0.33%. However, at lower strains, all PDs displayed acceptable performances. [ABSTRACT FROM AUTHOR]

As a 2D semiconductor, indium selenide (InSe) has shown great potentials in electronic and optoelectronic applications attributed to high carrier mobility and moderately large bandgap. However, switchable doping polarity of intrinsic InSe by electrical gating is not yet demonstrated, which is essential for applications in complementary electronics. In this work, the ambipolarity of InSe is realized and exploited through the van der Waals (vdW) integration with metal electrodes, which gets rid of the Fermi‐level pinning at the metal/semiconductor interfaces. On this basis, InSe field‐effect transistors (FETs) with controllable polarities are reconfigured with a dual‐gate structure, functioning as both unipolar FETs and p–n diodes. The p‐ and n‐type operations of the unipolar FETs are dynamically switched with on–off ratios of 106 and 109, respectively. Meanwhile, p–n diodes with a rectification ratio of 106 and high photodetection performance are also demonstrated. This work paves a promising way for InSe‐based reconfigurable complementary electronics and optoelectronics. [ABSTRACT FROM AUTHOR]

We present a low-cost and easy-to-implement technique to fabricate large-area WS2 photodetector devices onto transparent and flexible polycarbonate substrates. The method relies on the deposition of large-area (in the cm scale) thin films (~30 nm thick) of WS2 by a recently introduced abrasion-induced method. Interdigitated electrical contacts are then deposited by thermal evaporation through a shadow mask. The photodetectors present well-balanced performances with an good trade-off between responsivity (up to 144 mA/W at a source-drain voltage of 10 V and illumination power of 1 μW) and response time (down to ~70 µs) and a detectivity value of 108 Jones. We found that the devices perform very reversibly upon several illumination and straining cycles and we found a moderate device-to-device variation. [ABSTRACT FROM AUTHOR]

We developed inexpensive and disposable gas sensors with a low environmental footprint. This approach is based on a biodegradable substrate, paper, and features safe and nontoxic electronic materials. We show that abrasion-induced deposited WS2 nanoplatelets on paper can be employed as a successful sensing layer to develop high-sensitivity and selective sensors, which operate even at room temperature. Its performance is investigated, at room temperature, against NO2 exposure, finding that the electrical resistance of the device drops dramatically upon NO2 adsorption, decreasing by ~42% (~31% half a year later) for 0.8 ppm concentration, and establishing a detection limit around~2 ppb (~3 ppb half a year later). The sensor is highly selective towards NO2 gas with respect to the interferents NH3 and CO, whose responses were only 1.8% (obtained for 30 ppm) and 1.5% (obtained for 8 ppm), respectively. Interestingly, an improved response of the developed sensor under humid conditions was observed (tested for 25% relative humidity at 23 °C). The high-performance, in conjunction with its small dimensions, low cost, operation at room temperature, and the possibility of using it as a portable system, makes this sensor a promising candidate for continuous monitoring of NO2 on-site. [ABSTRACT FROM AUTHOR]

Rhenium disulfide (ReS2) is a semiconducting two-dimensional material with marked in-plane structural anisotropy. This lattice anisotropy is the stem of many quasi-1D properties observed in this material. In this work, we focus on strain engineering of optical and vibrational properties through mechanical deformations of the lattice. In particular, the exciton energy can be shifted by applying uniaxial strain, and the gauge factor is six times more pronounced when the strain is applied along the b-axis than in perpendicular to the b-axis of the ReS2 lattice. Moreover, we also observed how the two most prominent Raman modes can be shifted by uniaxial strain, and the shift strongly depends on the alignment between the uniaxial strain direction and the a- and b-axes of the ReS2 lattice. [ABSTRACT FROM AUTHOR]

Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes. [ABSTRACT FROM AUTHOR]

Molybdenum trioxide (MoO3) in-plane anisotropy has increasingly attracted the attention of the scientific community in the last few years. Many of the observed in-plane anisotropic properties stem from the anisotropic refractive index and elastic constants of the material but a comprehensive analysis of these fundamental properties is still lacking. Here we employ Raman and micro-reflectance measurements, using polarized light, to determine the angular dependence of the refractive index of thin MoO3 flakes and we study the directional dependence of the MoO3 Young's modulus using the buckling metrology method. We found that MoO3 displays one of the largest in-plane anisotropic mechanical properties reported for 2D materials so far. [ABSTRACT FROM AUTHOR]

Recently, van der Waals heterojunction based on 2D materials emerges as a promising technology for optoelectronic integrated circuits. Here, a self‐driven optoelectronic logic device is demonstrated based on vertically stacked van der Waals heterojunction of black phosphorus and molybdenum telluride. Through the electrostatic doping by gating, the heterojunction is dynamically tuned to isotype (p‐P and n‐N) and anisotype (p‐N) while the built‐in electric field in the heterojunction is greatly changed. Consequently, the photovoltaic effect in the heterojunction is switchable by the gate voltage, enabling a novel self‐driven optoelectronic logic element without the need of external biasing. This optoelectronic logic device shows promising characteristics of output dark current <1 pA, on/off current ratio >105, switching time <10 µs, broadband operation in the spectral range from 400 to 1600 nm, and linearly adjustable output current. The results may open up unprecedented opportunities to employ van der Waals heterojunctions for exploring logic optoelectronics with high performance and low power consumption. [ABSTRACT FROM AUTHOR]

Van der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS3 as an appealing narrow-gap p-type semiconductor with an efficient broadband photo-response, a high refractive index, and a remarkable resilience against air and light exposure. To enable fast prototyping, we provide a straightforward guideline to determine the thickness of few-layered FePS3 nanosheets extracted from the optical transmission characteristics of several flakes. The analysis of the electrical photo-response of FePS3 devices as a function of the excitation energy confirms a narrow gap suitable for near IR detection (1.23 eV) and, more interestingly, reveals a broad spectral responsivity up to the ultraviolet region. The experimental estimate for the gap energy is corroborated by ab-initio calculations. An analysis of photocurrent as a function of gate voltage and incident power reveals a photo-response dominated by photogating effects. Finally, aging studies of FePS3 nanosheets under ambient conditions show a limited reactivity of the outermost layers of flakes in long exposures to air. [ABSTRACT FROM AUTHOR]

The ultrathin nature and dangling bonds free surface of 2D semiconductors allow for significant modifications of their bandgap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong bandgap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effective strain transfer from the substrate to the thin InSe is confirmed by Raman spectroscopy. The bandgap change upon biaxial strain is determined through photoluminescence measurements, finding a gauge factor of up to ≈200 meV %−1. The effect of biaxial strain on the electrical properties of the InSe devices is further characterized. In the dark state, a large increase of the current is observed upon applied strain which gives a piezoresistive gauge factor value of ≈450–1000, ≈5–12 times larger than that of other 2D materials and of state‐of‐the‐art silicon strain gauges. Moreover, the biaxial strain tuning of the InSe bandgap also translates in a strain‐induced redshift of the spectral response of the InSe photodetectors with ΔEcut‐off ≈173 meV at a rate of ≈360 meV %−1 of strain, indicating a strong strain tunability of the spectral bandwidth of the photodetectors. [ABSTRACT FROM AUTHOR]

Among the hybrid organic–inorganic perovskites MAPbX3 (MA: methyl-ammonium CH3–NH3+, X = halogen), the triiodide specimen (MAPbI3) is still the material of choice for solar energy applications. Although it is able to absorb light above its 1.6 eV bandgap, its poor stability in humid air atmosphere has been a major drawback for its use in solar cells. However, we discovered that this perovskite can be prepared by ball milling in a straightforward way, yielding specimens with a superior stability. This fact allowed us to take atomic-resolution STEM images for the first time, with sufficient quality to unveil microscopic aspects of this material. We demonstrated full Iodine content, which might be related to the enhanced stability, in a more compact PbI6 framework with reduced unit-cell volume. A structural investigation from neutron powder diffraction (NPD) data of an undeuterated specimen was essential to determine the configuration of the organic MA unit in the 100–298 K temperature range. A phase transition is identified, from the tetragonal structure observed at RT (space group I4/mcm) to an orthorhombic (space group Pnma) phase where the methyl-ammonium organic units are fully localized. Our NPD data reveal that the MA changes are gradual and start before reaching the phase transition. Optoelectronic measurements yield a photocurrent peak at an illumination wavelength of 820 nm, which is redshifted by 30 nm with respect to previously reported measurements on MAPbI3 perovskites synthesized by crystallization from organic solvents. [ABSTRACT FROM AUTHOR]

2D semiconductors are excellent candidates for next‐generation electronics and optoelectronics thanks to their electrical properties and strong light‐matter interaction. To fabricate devices with optimal electrical properties, it is crucial to have both high‐quality semiconducting crystals and ideal contacts at metal‐semiconductor interfaces. Thanks to the mechanical exfoliation of van der Waals crystals, atomically thin high‐quality single‐crystals can easily be obtained in a laboratory. However, conventional metal deposition techniques can introduce chemical disorder and metal‐induced mid‐gap states that induce Fermi level pinning and can degrade the metal‐semiconductor interfaces, resulting in poorly performing devices. In this article, the electrical contact characteristics of Au–InSe and graphite–InSe van der Waals contacts, obtained by stacking mechanically exfoliated InSe flakes onto pre‐patterned Au or graphite electrodes without the need for lithography or metal deposition is explored. The high quality of the metal‐semiconductor interfaces obtained by van der Waals contact allows to fabricate high‐quality Schottky diodes based on the Au–InSe Schottky barrier. The experimental observation indicates that the contact barrier at the graphite–InSe interface is negligible due to the similar electron affinity of InSe and graphite, while the Au–InSe interfaces are dominated by a large Schottky barrier. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) materials exhibit a number of improved mechanical, optical, and electronic properties compared to their bulk counterparts. The absence of dangling bonds in the cleaved surfaces of these materials allows combining different 2D materials into van der Waals heterostructures to fabricate p-n junctions, photodetectors, and 2D–2D ohmic contacts that show unexpected performances. These intriguing results are regularly summarized in comprehensive reviews. A strategy to tailor their properties even further and to observe novel quantum phenomena consists in the fabrication of superlattices whose unit cell is formed either by two dissimilar 2D materials or by a 2D material subjected to a periodic perturbation, each component contributing with different characteristics. Furthermore, in a 2D material-based superlattice, the interlayer interaction between the layers mediated by van der Waals forces constitutes a key parameter to tune the global properties of the superlattice. The above-mentioned factors reflect the potential to devise countless combinations of van der Waals 2D material-based superlattices. In the present feature article, we explain in detail the state-of-the-art of 2D material-based superlattices and describe the different methods to fabricate them, classified as vertical stacking, intercalation with atoms or molecules, moiré patterning, strain engineering and lithographic design. We also aim to highlight some of the specific applications of each type of superlattices. [ABSTRACT FROM AUTHOR]

Here, we propose a method to determine the thickness of the most common transition metal dichalcogenides (TMDCs) placed on the surface of transparent stamps, used for the deterministic placement of two-dimensional materials, by analyzing the red, green and blue channels of transmission-mode optical microscopy images of the samples. In particular, the blue channel transmittance shows a large and monotonic thickness dependence, making it a very convenient probe of the flake thickness. The method proves to be robust given the small flake-to-flake variation and the insensitivity to doping changes of MoS2. We also tested the method for MoSe2, WS2 and WSe2. These results provide a reference guide to identify the number of layers of this family of materials on transparent substrates only using optical microscopy. [ABSTRACT FROM AUTHOR]

Abstract: The capability to detect the polarization state of light is crucial in many day‐life applications and scientific disciplines. Novel anisotropic 2D materials such as TiS3 combine polarization sensitivity, given by the in‐plane optical anisotropy, with excellent electrical properties. Here, the fabrication of a monolithic polarization‐sensitive broadband photodetector based on a mixed‐dimensionality TiS3/Si p–n junction is demonstrated. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350%, and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization‐sensitive systems such as polarimeters. [ABSTRACT FROM AUTHOR]

Abstract: Recent years have witnessed the rapidly growing interests in the rediscovered black phosphorus (BP), an elemental group‐V layered material with very high carrier mobility among all semiconducting layered materials. As a layered semiconductor, the bandgap of intrinsic BP varies from ≈0.3 to 2 eV depending on the thickness. This bandgap value can be tuned to below 50 meV by a moderate external electric field. Adsorption doping and external pressure can also effectively modify its bandgap. The largely tunable bandgap of BP makes it a promising material for infrared optics. Moreover, its unique puckered structure leads to the anisotropic in‐plane properties, making it ideal for the exploration of exotic physical phenomena and the realization of novel devices. Here, the fundamental optical properties are reviewed and latest developments on BP photonic and optoelectronic devices are discussed. [ABSTRACT FROM AUTHOR]

The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS2, MoSe2, WS2, and WSe2, with thickness ranging from one layer up to six layers. We analyzed the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provided a route to employ differential reflectance spectroscopy for determining the number of layers of MoS2, MoSe2, WS2, and WSe2. [ABSTRACT FROM AUTHOR]

Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p–n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p–n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p–n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p–n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p–n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p–n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field. [ABSTRACT FROM AUTHOR]

Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate complex devices, which would be otherwise very difficult to achieve by conventional bottom-up nanofabrication approaches, and to fabricate fully-encapsulated devices with exquisite electronic properties. The integration of 2D materials with existing technologies such as photonic and superconducting waveguides and fiber optics is another exciting possibility. Here, we review the state-of-the-art of the deterministic placement methods, describing and comparing the different alternative methods available in the literature, and we illustrate their potential to fabricate van der Waals heterostructures, to integrate 2D materials into complex devices and to fabricate artificial bilayer structures where the layers present a user-defined rotational twisting angle. [ABSTRACT FROM AUTHOR]

By combining ab initio calculations and experiments, we demonstrate how the band gap of the transition metal trichalcogenide TiS 3 can be modified by inducing tensile or compressive strain. In addition, using our calculations, we predicted that the material would exhibit a transition from a direct to an indirect band gap upon application of a compressive strain in the direction of easy electrical transport. The ability to control the band gap and its nature could have a significant impact on the use of TiS 3 for optical applications. We go on to verify our prediction via optical absorption experiments that demonstrate a band gap increase of up to 9% (from 0.99 to 1.08 eV) upon application of tensile stress along the easy transport direction. [ABSTRACT FROM AUTHOR]