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Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2.
- Source :
- Nano Research; Jun2021, Vol. 14 Issue 6, p1698-1703, 6p
- Publication Year :
- 2021
-
Abstract
- Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS<subscript>2</subscript>, MoSe<subscript>2</subscript>, WS<subscript>2</subscript> and WSe<subscript>2</subscript>. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS<subscript>2</subscript>, MoSe<subscript>2</subscript>, WS<subscript>2</subscript> and WSe<subscript>2</subscript>. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS<subscript>2</subscript> flakes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19980124
- Volume :
- 14
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Nano Research
- Publication Type :
- Academic Journal
- Accession number :
- 149572862
- Full Text :
- https://doi.org/10.1007/s12274-020-2918-2