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1. Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET.

Author

Boige, F., Tremouilles, D., and Richardeau, F.

Subjects
METAL oxide semiconductor field-effect transistors, SHORT-circuit currents, SHORT circuits, SEMICONDUCTOR devices, GATES, DIELECTRICS, LOGIC circuits
Abstract

During the short circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical mechanisms. [ABSTRACT FROM AUTHOR]

Published
2019
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