1. Microstructural and Electrical Behaviour of Mg2Si Thin Films Synthesized via rf Sputtering.
- Author
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Gupta, Suniksha, Howlader, Smita, Asokan, K., Banerjee, M. K., and Sachdev, K.
- Abstract
Polycrystalline Mg
2 Si thin films of varying thickness were grown on (100) Si substrate by employing extensive surface diffusion of elemental atoms. At first, magnesium atoms were deposited on (100) Si substrate with the aid of radio frequency magnetron sputtering; in order to promote interdiffusion of Mg and Si, annealing was carried out in hydrogen atmosphere at the temperature of 500 °C for a period of four hours. Films of thickness values 500 nm and 100 nm were prepared for further study. Electrical transport behaviour of thin films was studied by measuring Hall conductivity, charge carrier concentration and its mobility. Moreover, current-voltage characteristics of Mg2 Si thin films were studied by four probe colinear method. Structural analysis was done through X-ray diffraction study; microstructural study was conducted in SEM. While X-ray Photoelectron Spectroscopy (XPS) was used for securing chemical information of the film surface, Energy Dispersive Spectroscopy (EDS) was also employed to know the elemental composition of Mg2 Si thin films. Further, Atomoic Force microscopy (AFM) was conducted for topographic study. It was found that the Mg2 Si thin films prepared in the present investigation behaved as degenerate semiconductor with the maximum attainable conductivity of in the range of 102 S/m. Further, it was observed that the conductivity of higher thickness Mg2 Si thin film(~ 1000 nm) was lower than that of lower thickness film (~ 500 nm) at all the test temperature. [ABSTRACT FROM AUTHOR]- Published
- 2024
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