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Evolution of SPR in 120 MeV silver ion irradiated Cu (18%) C60 nanocomposites thin films.

Authors :
Sharma, P.
Singhal, R.
Vishnoi, R.
Sharma, G. D.
Kulriya, P.
Ojha, S.
Banerjee, M. K.
Chand, S.
Source :
Journal of Materials Science: Materials in Electronics; May2019, Vol. 30 Issue 9, p8301-8311, 11p
Publication Year :
2019

Abstract

Copper metal embedded fullerene C<subscript>60</subscript> thin films are deposited on various substrates via resistive heating co evaporation technique. Rutherford back scattering simulated spectrum confirms the thickness and composition of thin film to be ~ 32 nm and ~ 18 at%, respectively. The deposited thin films are irradiated by 120 MeV Ag ion beam for different fluences within the range, from 1 × 10<superscript>12</superscript> to 3 × 10<superscript>13</superscript> ions/cm<superscript>2</superscript>. UV–vis absorption spectroscopy study reveals the appearance of surface plasmon resonance (SPR) band in pristine thin film at ~ 622 nm; this phenomenon is ascribed to the presence of copper nanoparticles in C<subscript>60</subscript> matrix. The SPR band intensity increases with rising fluences, which is suggestive of the growth of Cu nanoparticles. Growth of Cu nanoparticles is further confirmed by transmission electron microscopic (TEM) and X-ray diffraction (XRD) study. Whereas the conversion of C<subscript>60</subscript> into amorphous carbon (a-C) is confirmed by Raman spectroscopy, XRD results of pristine Cu–C<subscript>60</subscript> thin film record the presence of Cu<subscript>2</subscript>O within the nanocomposite thin film. However, both X-ray photoelectron spectroscopy (XPS) and XRD studies on irradiated thin film samples authenticate the growth of Cu metal nanoparticles with concurrent removal of oxygen. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
30
Issue :
9
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
136463967
Full Text :
https://doi.org/10.1007/s10854-019-01148-9