1. Low-Power UWB CMOS LNA Gains 4 to 5 GHz.
- Author
-
WANG, CHUNHUA and WANG, WEN
- Subjects
ULTRA-wideband devices ,COMPLEMENTARY metal oxide semiconductors ,LOW noise amplifiers ,FABRICATION (Manufacturing) ,ENERGY dissipation - Abstract
The article reports that low-power ultrawideband (UWB) Complementary metal?oxide?semiconductor (CMOS) low noise amplifiers (LNA) gains fourto five gegahertz (GHz). It states that a low-noise amplifier (LNA) for low-voltage, low-power use was designed for fabrication using Taiwan Semiconductor Manufacturing's 0.18- picometer silicon CMOS technology. It further mentions that a current-reuse architecture is used to minimize power dissipation in the proposed UWB LNA design.
- Published
- 2015