Low-Power UWB CMOS LNA Gains 4 to 5 GHz.

The article reports that low-power ultrawideband (UWB) Complementary metal?oxide?semiconductor (CMOS) low noise amplifiers (LNA) gains fourto five gegahertz (GHz). It states that a low-noise amplifier (LNA) for low-voltage, low-power use was designed for fabrication using Taiwan Semiconductor Manufacturing's 0.18- picometer silicon CMOS technology. It further mentions that a current-reuse architecture is used to minimize power dissipation in the proposed UWB LNA design.