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The current focus in Autonomous Experimentation (AE) is on developing robust workflows to conduct the AE effectively. This entails the need for well-defined approaches to guide the AE process, including strategies for hyperparameter tuning and high-level human interventions within the workflow loop. This paper presents a comprehensive analysis of the influence of initial experimental conditions and in-loop interventions on the learning dynamics of Deep Kernel Learning (DKL) within the realm of AE in scanning probe microscopy. We explore the concept of the "seed effect," where the initial experiment setup has a substantial impact on the subsequent learning trajectory. Additionally, we introduce an approach of the seed point interventions in AE allowing the operator to influence the exploration process. Using a dataset from Piezoresponse Force Microscopy on PbTiO3 thin films, we illustrate the impact of the "seed effect" and in-loop seed interventions on the effectiveness of DKL in predicting material properties. The study highlights the importance of initial choices and adaptive interventions in optimizing learning rates and enhancing the efficiency of automated material characterization. This work offers valuable insights into designing more robust and effective AE workflows in microscopy with potential applications across various characterization techniques. [ABSTRACT FROM AUTHOR]

In this paper, we have studied the effect on the structure and magnetic properties of partial Pd substitution by Gd in Fe–Pd thin films of nominal composition Fe56Pd44−xGdx (x = 1, 3, 5, and 7), deposited onto Si(100) and Si(100)/SiO2 substrates by thermal evaporation. Several techniques contribute to the characterization of their microstructure and magnetic properties, such as x-ray diffraction (XRD), scanning electron microscopy, alternating gradient field magnetometry, and magnetic force microscopy (MFM). X-ray diffraction shows that the as-deposited films are either amorphous or contain a disordered FePd phase, depending on the film thickness. The transformation of disordered fcc-FePd into ordered fct-FePd has been induced by a heat treatment at 530 °C for 4 h. The addition of gadolinium leads to a reduction in the coercivity as a consequence of the emergence of soft phases and of the progressive reduction of the fct-FePd phase, which is primarily responsible for the observed maze magnetic domains. The exchange coupling between the soft phase and the hard fct-FePd phase is demonstrated by first-order reversal curves (FORCs). [ABSTRACT FROM AUTHOR]

Wrinkling, creasing, and folding are frequent phenomena encountered in biological and man-made bilayers made by thin films bonded to thicker and softer substrates often containing fibers. Paradigmatic examples of the latter are the skin, the brain, and arterial walls, for which wiggly cross sections are detected. Although experimental investigations on corrugation of these and analog bilayers would greatly benefit from scaling laws for prompt comparison of the wrinkling features, neither are they available nor have systematic approaches yielding to such laws ever been provided before. This gap is filled in this paper, where a uniaxially compressed bilayer formed by a thin elastic film bonded on a hyperelastic fiber-reinforced substrate is considered. The force balance at the film–substrate interface is here analytically and numerically investigated for highly mismatched film–substrates. The onset of wrinkling is then characterized in terms of both the critical strain and its corresponding wavenumber. Inspired by the asymptotic laws available for neo-Hookean bilayers, the paper then provides a systematic way to achieve novel scaling laws for the wrinkling features for fiber-reinforced highly mismatched hyperelastic bilayers. Such novel scaling laws shed light on the key contributions defining the response of the bilayer, as it is characterized by a fiber-induced complex anisotropy. Results are compared with finite element analyses and also with outcomes of both existing linear models and available ad hoc scalings. Furthermore, the amplitude, the global maximum and minimum of ruga occurring under increasing compression spanning the wrinkling, period doubling, and folding regimes are also obtained. [ABSTRACT FROM AUTHOR]

This paper focused on developing a methodology and metrology using a differential photoacoustic (PA) system to determine the effective water vapor diffusion coefficient (D e f f ) and the effective permeability coefficient (Π) in thin films as a piece of paper and standard polystyrene for a controlled relative humidity. The methodology proposes a new differential photoacoustic system, including the water reservoir, relative humidity, and temperature detectors. Two cells, reference/sample, were used to obtain the instrumental function to reduce the electronic and environmental noises. A method based on the study of ln [ 1 − (S − S 0) / Δ S ] = t / τ D and the behaviors of R2 as a function of the number of data was proposed to assess the region in which the photoacoustic signal should be processed to determine each effective coefficient. S is the amplitude of the PA signal, S 0 is the initial amplitude value, Δ S is the change, t (time), and τ D is the water vapor diffusion time. The effective water diffusion coefficient (D e f f ) for water and polystyrene was 1.90 × 10−11 m2/s and 3.09 × 10−11 m2/s, respectively. The permeability coefficient value for the piece of paper was 4.18 × 10−9 mol kg−1 cm−2 s−1 Pa−1, while for polystyrene, it was 6.80 × 10−9 mol kg−1 cm−2 s−1 Pa−1 for 70% of relative humidity. This methodology can be extended by changing the moisture content on the chamber to obtain the dependence of D e f f as a function of relative humidity. [ABSTRACT FROM AUTHOR]

HfO 2 -based thin films have raised considerable interest in ferroelectric memory devices due to their thickness scalability and process compatibility with CMOS. Stress exhibits a significant influence on ferroelectric polarization in HfO 2 -based films. However, the effect of stress has yet to be clarified despite numerous efforts, and there has been a lack of systematic review to collate and discuss this effect. This paper briefly introduces how stress is characterized in HfO 2 -based polycrystalline films as basis. Then, the process in which stress affects ferroelectricity is carefully discussed. The paper subsequently elaborates both the effects of out of plane stress and in plane stress. Furthermore, the interaction between stress and other factors is presented. Finally, the up-to-date research on the effect of stress are summarized, and several further research challenges for researchers are provided. Given the ubiquitous stress during the chip manufacturing process, a detailed summary of the stress effect has technological implications for processing and applications of HfO 2 -based thin films. [ABSTRACT FROM AUTHOR]

Lead-free piezoelectric (K, Na)NbO3 (KNN) is considered one of the promising candidates for the replacement of Pb(ZrxTi1−x)O3. Several studies underlined the issue of K and Na volatility with increasing deposition temperatures, leading to high leakage currents in thin films, which still represents a major drawback for applications. This paper shows how epitaxial growth with concomitant preferred orientation of KNN films on niobium-doped strontium titanate (Nb:STO) depends on growth temperature and substrate strain. A preferred out-of-plane polar (001) orientation of KNN is obtained at high temperatures (>600 °C), while (100) orientation is dominant for lower ones. The (001) orientation is forced out-of-plane due to the sizeable in-plane stress derived from a negative lattice mismatch of pseudo-cubic KNN with respect to the underlying cubic (001) Nb:STO substrate. Moreover, we show that K-Na deficiency and high leakage of epitaxial KNN films deposited at high temperatures are accompanied by the appearance of a pattern of orthogonal spontaneous ferroelectric domains aligned to the [100] and [010] directions of Nb:STO. This pattern, visible in secondary electron microscopy, piezoforce response microscopy, and conductive atomic force microscopy images, is uncorrelated to the surface morphology. Supported by reciprocal space mapping by x-ray diffraction, this phenomenon is interpreted as the result of strain relaxation via ferroelectric domain formation related to K-Na deficient films displaying a sizable and increasing compressive strain when grown on Nb:SrTiO3. Our findings suggest that strain engineering strategies in thin films could be used to stabilize specific configurations of piezo- and ferroelectric domains. [ABSTRACT FROM AUTHOR]

In this paper, we proposed and numerically demonstrated a giant enhancement up to in both fo 10 8 rward and backward propagation of the second harmonic generation by combining the high-quality factor cavities of the bound states in the continuum and the excellent nonlinear optical crystal of lithium niobate. The enhancement factor is defined as the ratio of the second harmonic signal generated by the structure (lithium niobate membrane with Si grating) divided by the signal generated by the lithium niobate membrane alone. Furthermore, a minimum interaction time of 350 ps is achieved despite the etching less lithium niobate membrane with a conversion efficiency of 4.77 × 10−6. The origin of the enhancements is linked to the excitation of a Fano-like shape symmetry-protected mode that is revealed by finite-difference time-domain simulations. The proposed platform opens the way to a new generation of efficient integrated optical sources compatible with nano-photonic devices for classical and quantum applications. [ABSTRACT FROM AUTHOR]

We report fabrication of reduced graphene oxide (rGO) films using chemical reduction by hydrazine hydrate and rGO paper-like samples using low temperature treatment reduction. Structural analysis confirms the formation of the rGO structure for both samples. Current-voltage (I-V) measurements of the rGO film reveal semiconductor behavior with the maximum current value of ~3×10-4A. The current for the rGO paper sample is found to be, at least, one order of magnitude higher. Moreover, bipolar resistance switching, corresponding to memristive behavior of type II, is observed in the I-V data of the rGO paper. Although precise values of the rGO film conductivity and the Seebeck coefficient could not be measured, rGO paper shows an electrical conductivity of 6.7×102S/m and Seebeck coefficient of -6μV/°C. Thus, we demonstrate a simplified way for the fabrication of rGO paper that possesses better and easier measurable macroscopic electrical properties than that of rGO thin film. [ABSTRACT FROM AUTHOR]

The holy grail of achieving efficient operation of infrared (IR) rectennas continues to be the realization of a high performance rectifier. In this paper, we have fabricated metal–insulator–metal (MIM) diodes based on TiO2, ZnO, and NiO thin films using shadow mask evaporation, photolithography, and sputtering. The electron affinities of oxides have been measured by a combination of variable angle spectroscopic ellipsometry and x-ray photoelectron spectroscopy, as well as deduction from the extraction of metal/oxide barrier heights of Fowler–Nordheim tunneling plots. Our results confirm a low value for the electron affinity of NiOx of ∼2.1–2.5 eV, which correlates with the high zero-bias dynamic resistance (RD0) of ∼500 kΩ of an associated MIM diode. These values render NiOx to be unsuitable for use in a rectenna device. Better performance has been observed from diodes based on TiO2 and ZnOx films. The best rectification performance was achieved for a Au/2.6 nm ZnOx/Cr diode, scaled down to 1 μm2 device area, showing a zero-bias dynamic resistance of RD0 = 71 kΩ, zero-bias responsivity β0 = 0.28 A/W, and a coupling efficiency of ηc = 2.4 × 10−5% for rectification at 28.3 THz. The main significance of this study is that it employs a methodology whereby key parameters of the MIM stack are derived from physical measurements, which are then used to assist in the fitting of electrical current–voltage data to produce a reliable appraisal of diode performance in an IR rectenna. [ABSTRACT FROM AUTHOR]

Polycrystalline thin films are widely used for devices and energy-related applications, such as power electronics, solar cells, and thermal management of devices. In many cases, large-scale crystallization during thin-film growth is challenging, so columnar grains are often found in metal and semiconductor thin films. These rough columnar grain boundaries may also have different phonon specularities from that for typically smoother top/bottom film surfaces. A simple analytical model to separately treat these boundaries and interfaces for phonon scattering is currently unavailable, although the in-plane thermal transport is critical to heat spreading within thin-film devices. In this paper, we extend the effective medium formulation from three-dimensional polycrystalline bulk materials to columnar-grained thin films. The model predictions agree well with those given by frequency-dependent phonon Monte Carlo simulations, considering varied phonon specularity at top/bottom film surfaces and grain-boundary phonon transmissivity. The analytical model is further used to analyze the existing data on polycrystalline ZnO thin films with columnar grains. [ABSTRACT FROM AUTHOR]

Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the B i 2 S e 3 family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage—common for nanopatterning in academic facilities—damages both nonmagnetic TIs and their magnetically doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. Although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable. [ABSTRACT FROM AUTHOR]

A novel elastomer-based composite material with enhanced piezoelectric performances is proposed in this paper, which is composed of the top and bottom polytetrafluoroethylene (PTFE) solid films with the middle PTFE nanoparticle–polydimethylsiloxane (PDMS) sponge layer. To enhance the charge retention capability of elastomers, PTFE nanoparticles are introduced to form PTFE–PDMS interfaces, which can trap charges with longevity. Besides, PTFE solid films take on the role of the charge blocking layers to further improve the piezoelectric performances. As a result, the PTFE–PDMS sandwich structure shows the advantages of remarkable sensitivity (1053 pC/N), high stability, and flexibility. After a 6 h of annealing treatment at the temperature of 100 °C, no significant deterioration of the piezoelectric properties can be observed, which reveals the great thermal stability of the sandwich structure. In addition, the sandwich structure can be immersed in water for 24 h without any loss of piezoelectric activity. Finally, the experiment of lighting one LED by hand pressing successfully demonstrates that the sandwich structure has good applicability in the field of energy harvesting. Considering the excellent electrical and mechanical features, the PTFE–PDMS sandwich structure has promising applications in sensing, energy harvesting, and actuation. [ABSTRACT FROM AUTHOR]

In this paper, nanostructured tungsten oxide (WO3) thin films are deposited using the RF-magnetron sputtering technique in Glancing Angle (GLAD) arrangement. Variation in the structural, morphological, optical, and resistive switching (RS) characteristics of nanostructured WO3 film is investigated as a function of GLAD angle (60°–80°). Electrical studies on nanostructured WO3 films deposited at room temperature are found to exhibit enhanced bipolar resistive-switching properties in metal–insulator–metal pattern [Au/WO3/ITO]. The RON/ROFF ratio between high and low resistance states was noted to be about 190 besides a minimum set voltage of ∼2.22 V in the case of the WO3 thin film deposited at the 70° glancing angle. A detailed current transport mechanism analysis indicates the existence of ohmic-behavior and trap-assisted space charge limited conduction as the governing mechanisms at the state of low and high applied bias, respectively. Good data-retention characteristics coupled with reproducible and fast RS capabilities obtained with Au/WO3/ITO device structure promise scope of rapid development in future RS-based novel memory device applications. [ABSTRACT FROM AUTHOR]

Herein, a prototype nonvolatile bent ferroelastic domain wall (DW) memory based on extension–retraction of DWs in a top electrode/bent ferroelastic DWs/bottom electrode architecture is demonstrated and the effects of mechanical condition, electrical condition, and the material parameter on ferroelastic DWs in PbTiO3 ferroelectric thin films are studied by phase field modeling. Misfit strain can be used to drive the bend of DWs in PbTiO3 thin film, resulting in a change of ferroelastic domain size, bending degree, and conductivity. Stable and reversible switching of DWs between the extendible state with high conductivity and the retractile state with low conductivity can be realized, resulting in an apparent resistance change with a large ON/OFF ratio of >102 and an excellent retention characteristic. The extension and retraction speed, corresponding to data writing speed, can be adjusted by the electric field magnitude and distributions. The memory speed increases by 5% under a homogeneous electric field and 6% under an inhomogeneous probing electric field, after the buildup of space charges in a ferroelectric thin film, and the fastest memory speed is obtained at tip potential φ = 1.8. Moreover, polarization orientations of a and c domains separated by bent ferroelastic DWs do not affect memory performance. This paper can guide the development of new ferroelectric domain wall memory. [ABSTRACT FROM AUTHOR]

In this paper, we investigated the dependence of dynamic hysteresis on the electric field amplitude E0 and the frequency f in organic ferroelectric copolymer polyvinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] thin films prepared by a spin-coating method on fluorine-doped tin oxide conductive glass. Three stages can be observed of the hysteresis area vs the field strength E0. In stage I of low E0 values, the area ⟨ A ⟩ dependent on E0 follows the law of ⟨ A ⟩ ∝ E 0 1.92795 , whereas the diverse distribution of the area ⟨ A ⟩ with frequency f is found. In stage II of the intermediate E0 values, ⟨ A ⟩ ∝ E 0 β is not applicable owing to collective contributions between 180° domain and chiral domain, while a relation of ⟨ A ⟩ ∝ f − 0.18636 can be deduced, a fascinating characteristic distinguishing from the nonlinear relations of the inorganics in this section. In stage III of high E0 values, the scaling law is ⟨ A ⟩ ∝ f 0.08447 E 0 0.49394 where the chiral domain is active. The positive β in the law of ⟨ A ⟩ ∝ f α E 0 β illustrates that a growing number of chiral domains in P(VDF-TrFE) can keep pace with the variation of E0. Especially, the negative α in the transition zone, resembling some inorganics under low electric fields, probably indicates 180° domain reversal failing to follow with the alternating velocity of the increasing periodic electric field. [ABSTRACT FROM AUTHOR]

In this paper, the field-induced residual ferroelectricity in antiferroelectric lead zirconate thin films has been studied by impedance measurements together with a hyperbolic law analysis, which permits us to extract the different contributions to the material's complex permittivity. By measuring the Rayleigh coefficient α r , it appears that the residual ferroelectricity is considerably enhanced when the sample has been previously exposed to an electric field close to the antiferroelectric to ferroelectric transition field. This indicates that a part of the material remains ferroelectric after the antiferroelectric–ferroelectric backward transition, which constitutes an additional contribution to polarization. Consequently, a higher domain wall density and mobility can be observed. Measurements after exposition to thermal treatment show that this ferroelectric response is metastable. [ABSTRACT FROM AUTHOR]

Zinc oxide is a breakthrough multifunctional material of emerging interest applicable in the areas of electronics, computing, energy harvesting, sensing, optoelectronics, and biomedicine. ZnO has a direct and wide bandgap and high exciton binding energy. It is nontoxic, earth-abundant, and biocompatible. However, the growth and characterization of high-quality ZnO has been a challenge and bottleneck in its development. Efforts have been made to synthesize device-quality zinc oxide and unleash its potential for multiple advanced applications. ZnO could be grown as thin films, nanostructures, or bulk, and its properties could be optimized by tuning the growth techniques, conditions, and doping. Zinc oxide could be a suitable material for next generation devices including spintronics, sensors, solar cells, light-emitting diodes, thermoelectrics, etc. It is important and urgent to collate recent advances in this material, which would strategically help in further research and developments in ZnO. This paper provides a coherent review of developments in ZnO growth, leading to its advancing applications. Recent developments in growth technologies that address native defects, current challenges in zinc oxide, and its emerging applications are reviewed and discussed in this article. [ABSTRACT FROM AUTHOR]

Lift-off processes have been developed as the enabling technology to free the epitaxial III-nitride thin film from a conventional growth substrate such as sapphire and silicon in order to realize a variety of novel device designs and structures not otherwise possible. An epitaxial lift-off (ELO) process can be adopted to transfer the entire film to an arbitrary foreign substrate to achieve various functions, including enhancement of device performance, improvement of thermal management, and to enable flexibility among others. On the other hand, partial ELO techniques, whereby only a portion of the thin-film is detached from the substrate, can be employed to realize unconventional device structures or geometries, such as apertured, pivoted, and flexible devices, which may be exploited for various photonic structures or optical cavities. This paper reviews the development of different lift-off strategies and processes for III-nitride materials and devices, followed by a perspective on the future directions of this technology. [ABSTRACT FROM AUTHOR]

Proton irradiation of lithium fluoride (LiF) crystals and thin films causes the formation of electronic defects, known as color centers, in the crystal lattice, some of which show photoluminescence in the visible range under blue-light excitation. With a suitable irradiation geometry, the energy density that protons deposit in the material can be recorded as a spatial distribution of these light-emitting color centers, from which a luminous replica of the proton Bragg curve can be thereafter extracted and analyzed in a fluorescence microscope. In this paper, the cases of two LiF thin films deposited on silicon substrates and of a LiF crystal, all of them transversally irradiated with a nominal 35 MeV proton beam, are considered. A comparison of the measured photoluminescent Bragg curves with Monte Carlo simulations demonstrates (i) that the Bragg peaks in the films are located at the very same positions that would be expected in the underlying silicon substrates rather than in LiF and (ii) that an even small grazing angle of the impinging proton beam is able to significantly modify the shape of the Bragg curve in the films. Both of these findings are ascribed to the effects of multiple Coulomb scattering in both the film and the substrate. The coincidence of the Bragg peak positions with those expected in the silicon substrates and the possibility of visualizing such peaks in the Bragg curves stored as latent fluorescence images in the LiF films allow one to regard them as information transducers for proton beam diagnostics and dosimetry. [ABSTRACT FROM AUTHOR]

X-ray photoelectron spectroscopy (XPS) is generally used for chemical analysis of surfaces and interfaces. This method involves the analysis of changes in binding energies and peak shapes of elements under consideration. It is also possible to use XPS to study the effect of x-ray radiation on the electrical properties of thin films. We measured the Si 2p peak using x-ray powers of 300 and 150 W on ∼135 nm silicon dioxide (SiO2) thin films grown on both n- and p-type substrates while applying DC or AC external biases. Using the shifts in the binding energy of the Si 2p peak, we calculated the resistances and the capacitances of the SiO2 thin film. The way that the binding energies of the Si 2p peak and the capacitance of the thin film change as a function of the type of Si substrate and the power of the x-ray are explained using band bending. [ABSTRACT FROM AUTHOR]

In the past two decades, there have been huge developments in the understanding of damping in multilayered thin films and, more generally, in spin-transport in spintronic systems. In multilayered ferromagnetic (FM)/non-magnetic (NM) thin-film systems, observations of ferromagnetic resonant precession show a strong increase in the fundamental damping when the FM thin films are layered with heavy metals, such as Pt. These observations led to significant theoretical developments, dominated by the "spin-pumping" formalism, which describes the enhancement of damping in terms of the propagation or "pumping" of spin-current across the interface from the precessing magnetization into the heavy metal. This paper presents a perspective that introduces the key early experimental damping results in FM/NM systems and outlines the theoretical models developed to explain the enhanced damping observed in these systems. This is followed by a wider discussion of a range of experimental results in the context of the theoretical models, highlighting agreement between the theory and experiment, and more recent observations that have required further theoretical consideration, in particular, with respect to the role of the interfaces and proximity-induced magnetism in the heavy metal layer. The Perspective concludes with an outline discussion of spinpumping in the broader context of spin-transport. [ABSTRACT FROM AUTHOR]

This paper reports the onset of ferroelectricity in NiO by breaking the crystallographic symmetry with oxygen vacancies created by N doping. Nitrogen-doped NiO was grown at room temperature by RF sputtering of Ni target in Ar–O2–N2 plasma on silicon and fused silica substrates. The impact of the nitrogen doping of NiO on microstructural, optical, and electrical properties has been investigated. According to x-ray diffraction investigations, by increasing the N doping level in NiO, a transition from (002) to a (111) preferential orientation for the cubic NiO phase was observed, as well as a lattice strain relaxation, that is usually ascribed to structural defect formation in crystal. The x-ray diffraction pole figures the presence of a distorted cubic structure in NiO and supports the Rietveld refinement findings related to the strain, which pointed out that nitrogen doping fosters lattice imperfections formation. These findings were found to be in agreement with our far-infrared measurements that revealed that upon nitrogen doping a structural distortion of the NiO cubic phase appears. X-ray photoemission spectroscopy measurements reveal the presence of oxygen vacancies in the NiO film following nitrogen doping. Evidence of ferroelectricity in nitrogen-doped NiO thin films has been provided by using the well-established Sawyer–Tower method. The results reported here provide the first insights on oxygen-vacancy induced ferroelectricity in nitrogen-doped nickel oxide thin films. [ABSTRACT FROM AUTHOR]

Two-dimensional transition metal dichalcogenides (TMDCs) are demonstrated to be appealing semiconductors for optoelectronic applications, thanks to their remarkable properties in the ultraviolet-visible spectral range. Interestingly, TMDCs have not yet been characterized when exposed to x rays, although they would be ideal candidates for optoelectronic applications in this spectral range. They benefit from the high cross section of the constituent heavy atoms, while keeping the absorption very low, due to the ultrathin structure of the film. This encourages the development of photodetectors based on TMDCs for several applications dealing with x rays, such as radioprotection, medical treatments, and diagnosis. Given the atomic thickness of TMDCs, they can be expected to perform well at low dose measurements with minimal perturbation of the radiation beam, which is required for in vivo applications. In this paper, the use of TMDCs as active materials for direct x-ray detection is demonstrated, using a photodetector based on a MoS2 monolayer (1L-MoS2). The detector shows a response to x rays in the range of 101–102 keV, at dose rates as low as fractions of mGy/s. The sensitivity of 1L-MoS2 reaches values in the range of 108–109µC Gy−1 cm−3, overcoming the values reported for most of the organic and inorganic materials. To improve the x-ray photoresponse even further, the 1L-MoS2 was coupled with a polymeric film integrating a scintillator based on terbium-doped gadolinium oxysulfide (Gd2O2S:Tb). The resulting signal was three times larger, enabled by the indirect x ray to visible photoconversion mechanism. This paper might pave the way toward the production of ultrathin real-time dosimeters for in vivo applications. [ABSTRACT FROM AUTHOR]

This paper focuses on the effect of magnetron sputtering process parameters on the performance of thin metal film. Copper–tin alloy metal film was deposited on both sides of the PVDF film using direct current magnetron sputtering technology, and the effects of different working pressures, sputtering powers, sputtering times, and argon flow rates on the uniformity, deposition rate, and electrical conductivity of the metal film were studied separately. The main and minor factors affecting the conductivity of the metal film were determined by multiple linear regression, and the process parameters were optimized. The optimal process parameters include a working pressure of 0.065 Pa, a sputtering power of 70 W, a sputtering time of 20 min, and an argon flow of 20 SCCM. The samples with the best electrical conductivity were analyzed by scanning electron microscopy and energy spectrometry for microscopic morphology and elemental composition. The experimental results showed that the sputtering time and sputtering power have a greater effect on the metal film uniformity and that the working pressure and argon flow rate have a smaller effect on the metal film uniformity; when the working pressure is lower, the sputtering power is higher, the sputtering time is longer, the argon flow rate is higher, and the conductivity of the sputtered metal film is better. The deposition rate decreased with the increase in the working pressure and increased with the increase in the sputtering power and argon flow rate. The working pressure is the main factor affecting the conductivity of the metal film, and the sputtering power and sputtering time are secondary factors. [ABSTRACT FROM AUTHOR]

Experimental materials data are heterogeneous and include a variety of metadata for processing and characterization conditions, making the implementation of data-driven approaches for developing novel materials difficult. In this paper, we introduce the Thin-Film Alloy Database (TFADB), a materials data management platform, designed for combinatorially investigated thin-film alloys through various experimental tools. Using TFADB, researchers can readily upload, edit, and retrieve multi-dimensional experimental alloy data, such as composition, thickness, x-ray diffraction, electrical resistivity, nanoindentation, and image data. Furthermore, composition-dependent properties from the database can easily be managed in a format adequate to be preprocessed for machine learning analyses. The high flexibility of the software allows the management of new types of materials data that can be potentially acquired from new combinatorial experiments. [ABSTRACT FROM AUTHOR]

The flash methods, which are the most popular transient methods for measuring the thermal diffusivity of solid materials, have evolved into ultrafast laser flash methods by using picosecond or nanosecond pulse lasers as a heating source and a thermo-reflectance technique such as high-speed thermometry. In conventional ultrafast laser flash methods, thermal diffusivity is determined by fitting an analytical equation after single pulse heating to observe thermo-reflectance signals, although actual thermo-reflectance signals are observed after periodic pulse heating. This paper presents an exact analytical solution of the temperature response expressed by Fourier series for one-dimensional heat diffusion after periodic pulse heating. These Fourier coefficients are directly related to the Laplace transformation of the temperature response after single pulse heating. The signal observed for a 100 nm thick platinum thin film on a fused quartz substrate was analyzed by this Fourier expansion analysis and fitted by analytical equations with three parameters: heat diffusion time across thin film, the ratio of heat effusion of the substrate to thin film, and the amplitude of the signal over the entire range of pulse interval in the time domain. Robustness in determining the thermal diffusivity of the thin film by the ultrafast laser flash method can be improved by this new analysis approach. [ABSTRACT FROM AUTHOR]

Quasi-2D Dion–Jacobson (DJ) halide perovskites with large exciton binding energy, self-assembled quantum wells, and high quantum yield attract growing attention in light-emitting diodes and solar devices. DJ-layered perovskites have the eliminated van der Waals gap and show improved photophysical features. However, there are a variety of defects and complex phase distributions produced during the solution procedure and the fast crystal development. In this paper, we reveal the effect of phase distribution and defect passivation on amplified spontaneous emission of quasi-2D perovskite (PDMA)(MA)2Pb3Br10 thin films through solvent engineering and additive methods, by establishing the correlation between the precursor compositions and the photophysical performance of the layered DJ perovskites. The energy transfer rate and the photoluminescence quantum yield increase due to the spatially homogeneous domain distribution and the reduced defect density after the addition of KBr in the DMSO:DMF. More importantly, we realize green amplified spontaneous emission and single-mode vertical-cavity surface-emitting lasing with low thresholds of 8.8 and 10.5 μJ cm−2, respectively. This work provides a guideline to achieve low-threshold multicolor lasers based on DJ perovskites. [ABSTRACT FROM AUTHOR]

This present paper investigates Lie symmetry analysis, one-dimensional optimal system, exact solutions and conservation laws of the (2 + 1)-dimensional time fractional thin liquid film equations (TFTLFE) with Riemann–Liouville fractional derivative. Explicitly, we obtain six vector fields and the one-dimensional optimal system admitted by TFTLFE. Then, we perform the symmetry reductions with the help of Erdélyi–Kober fractional differential operator and (2 + 1)-dimensional TFTLFE is reduced into (1 + 1)-dimensional fractional partial differential equations (FPDEs). Additionally, by means of compound variable transformation and the power series expansion method, the solution of reduced FPDEs is obtained and its convergence is verified. Moreover, we derive other solutions for the reduced equations taking advantage of the invariant subspace method. Furthermore, the conservation laws are also established utilizing generalized Noether's theorem. Finally, we construct the exact solution using the method of conservation laws. [ABSTRACT FROM AUTHOR]

Although spraying pesticides onto stems and leaves is the most effective method to prevent plant pests and diseases, the splashing of the droplets upon impact with the leaf surface is one of the main ways that the liquid agent is lost during the application process. Moreover, the collision and impact of flowing droplets with the liquid film are complex owing to the presence of microstructures on the leaf surface. Therefore, understanding the droplet impact dynamics is crucial for improving the pesticide application process. In this paper, a simulated rice leaf with a microstructured surface was established, and the impacting dynamics of a liquid droplet on this surface with thin liquid film were investigated using numerical methods. Specifically, the influences of different droplet diameters, droplet velocities, liquid film thicknesses, and leaf surface microstructure dimensions on the impacting dynamics were analyzed. The results showed that the behavior of spreading, jetting, rebound, and splashing occurred upon when droplets impact the simulated surface of rice leaves with thin liquid film. Moreover, a larger droplet diameter and a higher velocity lead to an increase in both the maximum height and diameter of the formed crown. Additionally, the thicker liquid films result in crowns with a smaller base radius. When the jetting angle increases, the crown height increases while its base radius decreases. With the increase in the rib spacing of microstructure, the maximum crown height initially increases and then decreases, while the crown base radius decreases. However, the rib depth has no significant influence on the base radius of the crown. Equations for the quantitative expression of the transition relationships between the deposition, jetting, and splashing phenomena were established on the basis of the Reynolds number, Ohnesorge number, and Weber number as well as the dimensionless liquid film thickness. [ABSTRACT FROM AUTHOR]

Thin liquid films on free surfaces or inside restricted spaces are widely encountered and can have significant effects in heat transfer, coating, biofilm growth, and lubrication. The thickness and distribution of these thin liquid films are important determinants of performance, but cannot easily be measured accurately. This paper presents a methodological study on determining the thickness of thin liquid films by means of laser-induced fluorescence. A model of fluorescence imaging and measurement is established based on the fluorescence energy transmission. A novel pixel-dependent laser-induced fluorescence method is then proposed and compared with commonly used methods using experimental test results. The accuracy and precision of the measurements are discussed in detail. It is found that the measurement performance is greatly influenced by the nonlinearity, heterogeneity, and random noise of the optical system and imaging technique. The proposed pixel-dependent laser-induced fluorescence method effectively eliminates or ameliorates the effects of these factors and enhances the measuring accuracy. [ABSTRACT FROM AUTHOR]

This paper presents fast, accurate software for modeling physical vapor deposition systems over irregular surfaces. The model is implemented using graphics processing unit (GPU) ray casting. Applied models are viewed as a cross section of the area of interest. Given evaporation rate, time, and angular profiles in a vacuum system, an iterative time-step approach for calculating deposition profiles is calculated in the GPU architecture following a ballistic modeling approach. Thin-film technologies for the electronics industry will require evaporations on complex surfaces. Depending on the nature of the surface, a uniform thin film across the topology is wanted for various device parameters. The ray casting method is tested against various profiles. The code is freely distributed on GitHub (see https://github.com/adam-r-thomas/PVDS). [ABSTRACT FROM AUTHOR]

Antibubbles are a special spherical structure generated in liquids surrounded by a thin air film. The collapse of antibubbles has been regarded as a feasible method for generating microbubbles. This paper demonstrates an experimental study on the antibubble collapse focusing on the effect of rupture time and location. With the help of a high-speed camera, the detailed collapse dynamics for different rupture times and locations was presented. The collapse velocity was found to vary significantly with the rupture time and location. An upgraded theoretical model was proposed to elucidate the effect of the air film thickness distribution due to drainage on the collapse velocity. This study should stimulate further investigation on the antibubble collapse, especially the size distribution of the generated microbubbles. [ABSTRACT FROM AUTHOR]

Pt thin film was characterized by hard x-ray photoelectron spectroscopy (HAXPES) with an Ag Lα (2984.3 eV) excitation source. Sample was fixed to a stainless-steel sample holder with a copper double-sided adhesive tape. The survey spectrum, Pt 3d, Pt 4f, Pt 4d, C 1s, and valence band core levels spectra were acquired. [ABSTRACT FROM AUTHOR]

In this paper, a paper-based ultracapacitors were fabricated by the rod-rolling method with the ink of carbon nanomaterials, which were synthesized by arc discharge under various magnetic conditions. Composites of carbon nanostructures, including high-purity single-walled carbon nanotubes (SWCNTs) and graphene flakes were synthesized simultaneously in a magnetically enhanced arc. These two nanostructures have promising electrical properties and synergistic effects in the application of ultracapacitors. Scanning electron microscope, transmission electron microscope, and Raman spectroscopy were employed to characterize the properties of carbon nanostructures and their thin films. The sheet resistance of the SWCNT and composite thin films was also evaluated by four-point probe from room temperature to the cryogenic temperature as low as 90 K. In addition, measurements of cyclic voltammetery and galvanostatic charging/discharging showed the ultracapacitor based on composites possessed a superior specific capacitance of up to 100 F/g, which is around three times higher than the ultracapacitor entirely fabricated with SWCNT. [ABSTRACT FROM AUTHOR]

Reflection high energy electron diffraction (RHEED) information is critical for the growth of thin films; however, only a small percentage of the data from RHEED videos is typically used. The use of full videos in machine learning can require dimension reduction techniques. In this paper, three dimension reduction techniques, principal component analysis (PCA), non-negative matrix factorization (NMF), and kmeans clustering, are compared to investigate their benefits to the analysis of RHEED data. Three different heterostructures with different growth modes, all deposited on Ti-terminated strontium titanate by pulsed laser deposition, were used for the analysis: lanthanum aluminate with layer-by-layer growth, lithium cobalt oxide with island growth, and strontium ruthenate with a transition from layer-by-layer to step-flow growth. A phase shift in intensity fluctuations of different RHEED spots was discovered and discussed in terms of their sensitivity to the film growth characterization. The diffraction spots that were more sensitive to the growth were differentiated from the spots that are affected by the substrate as a function of film thickness. It was concluded that NMF provides the analysis that is easiest to interpret without the loss of detailed physical information due to its non-negativity constraint and lack of forced orthogonality such as in PCA. Analysis of the full RHEED videos enables a more detailed understanding of growth characteristics and control of growth processes as aided by dimension reduction. [ABSTRACT FROM AUTHOR]

Goyal I et al. i performed thermodynamic simulation on Mg doping in Ga SB 2 sb O SB 3 sb .[35] They proposed that the hydrogen-assisted process would enable efficient Mg doping to control the Fermi level in Ga SB 2 sb O SB 3 sb . Epitaxial lateral overgrowth of r-plane I i -Ga SB 2 sb O SB 3 sb thin films was performed using halide vapor phase epitaxy by Oshima I et al. i [27] Kaneko I et al. i contributed a perspective on prospects for phase engineering of semi-stable Ga SB 2 sb O SB 3 sb thin films.[28] They discussed the topics based on material properties of metastable polymorphic Ga SB 2 sb O SB 3 sb epitaxial films grown by mist chemical vapor deposition (mist-CVD). Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III-V, and II-VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. [Extracted from the article]

MEMS electric energy utilization rate is the key parameter affecting firing performance. It has important relationship with its preparation technology, microscale and structure morphology. In order to improve the theory of energy exchange element design for MEMS pyrotechnics, reduce the design error of transducer parameters at microscale. To ensure the performance of MEMS pyrotechnics, in this paper, the influence of the central line of the thin film transducer element on the electrothermal conversion is simulated and analyzed. The electrothermal conversion and temperature characterization of different central lines in the transducer bridge area are calculated by the finite element method. The influence of the central line on the thermal efficiency under microscale is revealed. The corresponding data are obtained. [ABSTRACT FROM AUTHOR]

As shown theoretically earlier via both weak segregation and self-consistent field theories, ordering of confined molten di- and tri-block copolymer morphologies in the presence of a proper 1D patterned substrate could induce the formation of 3D bicontinuous (in particular, diamond-like) morphologies (DLMs). The purpose of the present paper is to study, unlike the previous studies, how the stable DLMs are formed not in a melt but in a solution of symmetric diblock copolymers with a nonselective solvent that wets the thin film on the patterned substrate. It is shown, via a straightforward self-consistent field calculation of the total solution free energy for various competing phases, that the DLM could be formed in the solutions (with the solvent volume fraction of 0.5), which provides much faster thermodynamic equilibration of the solution as compared to the melt. The last circumstance can ease the production of stable DLMs in thin films of copolymers. The phase diagram describing the stable phases on the plane "the pattern period—the film thickness" is built. [ABSTRACT FROM AUTHOR]

In the field of atomically thin 2D materials, oxides are relatively unexplored in spite of the large number of layered oxide structures amenable to exfoliation. There is an increasing interest in ultrathin film oxide nanostructures from applied points of view. In this Perspective paper, recent progress in understanding the fundamental properties of 2D oxides is discussed. Two families of 2D oxides are considered: (1) van der Waals bonded layered materials in which the transition metal is in its highest valence state (represented by V 2 O 5 and MoO 3) and (2) layered materials with ionic bonding between positive alkali cation layers and negatively charged transition metal oxide layers (LiCoO 2). The chemical exfoliation process and its combination with mechanical exfoliation are presented for the latter. Structural phase stability of the resulting nanoflakes, the role of cation size, and the importance of defects in oxides are discussed. Effects of two-dimensionality on phonons, electronic band structures, and electronic screening are placed in the context of what is known on other 2D materials, such as transition metal dichalcogenides. The electronic structure is discussed at the level of many-body-perturbation theory using the quasiparticle self-consistent G W method, the accuracy of which is critically evaluated including effects of electron–hole interactions on screening and electron–phonon coupling. The predicted occurrence of a two-dimensional electron gas on Li-covered surfaces of LiCoO 2 and its relation to topological aspects of the band structure and bonding is presented as an example of the essential role of the surface in ultrathin materials. Finally, some case studies of the electronic transport and the use of these oxides in nanoscale field-effect transistors are presented. [ABSTRACT FROM AUTHOR]

Spin gapless semiconductor (SGS) presents abundant electric and magnetic properties and is highly sensitive to external factors, such as current, electric field, magnetic field, and stress. This paper reports on a PbPd0.9Co0.1O2/PMNPT(001) laminate thin film with the "SGS/ferroelectrics" structure, which exhibits significant current-induced resistance (I-ER) effect. More importantly, the colossal static electric-field-induced resistance (E-ER) effect in such a laminate film was observed for the first time. The introduction of lattice defects (Pb vacancies) induces a local electric field, electron spin ordering state, and ferroelectric polarization field effect to explain the excellent physical properties. The reported laminate thin film composite exhibits promising application potential in spintronic devices, composite sensor units, storage systems, and other low-energy semiconductor electronic device fields. This work proposes an alternative way to investigate the novel properties for spin gapless semiconductors and expand the research fields of multi-field modulation effect in magnetoelectric composites. [ABSTRACT FROM AUTHOR]

Double perovskite ferroelectric thin films are completely new material systems derived from single perovskite. Their diversity of composition and structure and the tendency for spontaneous atomic ordering broaden the path for the development of ferroelectric thin films. The ordered double perovskite ferroelectric thin films lead to excellent ferroelectric, dielectric, magnetic, and optical properties, promising further applications in photovoltaic cells, information memory, and spintronic and photoelectric devices, where the intrinsic coupling and tuning of multiple properties could also push it into multifunctional intersecting devices. However, complex internal physical mechanisms and difficult preparation conditions have prevented its further development. Based on ordered/disordered ferroelectric thin films of double perovskites, this paper first discusses ordered characterization methods such as superstructure reflection/diffraction peaks, especially for epitaxial thin films, saturation magnetization (macroscopic), and scanning transmission electron microscopy (microscopic). In response to the generally poor ordering of present systems, the paper also reviews the internal structure of the material and the external synthesis conditions that affect the ordering, including the valence and radii of the cations, preparation methods, element substitution and strain engineering, in the hope of triggering further research into ordered double perovskite ferroelectrics. Combined with the current state of research on existing double perovskite ferroelectricity thin film systems, advances in the fields of ferroelectric photovoltaics, magnetoelectric coupling, dielectric tunability, resistive switching, and photoelectric coupling have been presented. Finally, the challenges facing the material system are discussed and an outlook is provided for the development of the field. [ABSTRACT FROM AUTHOR]