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Spontaneous pattern of orthogonal ferroelectric domains in epitaxial KNN films.

Authors :
Groppi, C.
Maspero, F.
Asa, M.
Pavese, G.
Rinaldi, C.
Albisetti, E.
Badillo-Avila, M.
Bertacco, R.
Source :
Journal of Applied Physics; 11/28/2023, Vol. 134 Issue 20, p1-12, 12p
Publication Year :
2023

Abstract

Lead-free piezoelectric (K, Na)NbO<subscript>3</subscript> (KNN) is considered one of the promising candidates for the replacement of Pb(Zr<subscript>x</subscript>Ti<subscript>1−x</subscript>)O<subscript>3</subscript>. Several studies underlined the issue of K and Na volatility with increasing deposition temperatures, leading to high leakage currents in thin films, which still represents a major drawback for applications. This paper shows how epitaxial growth with concomitant preferred orientation of KNN films on niobium-doped strontium titanate (Nb:STO) depends on growth temperature and substrate strain. A preferred out-of-plane polar (001) orientation of KNN is obtained at high temperatures (>600 °C), while (100) orientation is dominant for lower ones. The (001) orientation is forced out-of-plane due to the sizeable in-plane stress derived from a negative lattice mismatch of pseudo-cubic KNN with respect to the underlying cubic (001) Nb:STO substrate. Moreover, we show that K-Na deficiency and high leakage of epitaxial KNN films deposited at high temperatures are accompanied by the appearance of a pattern of orthogonal spontaneous ferroelectric domains aligned to the [100] and [010] directions of Nb:STO. This pattern, visible in secondary electron microscopy, piezoforce response microscopy, and conductive atomic force microscopy images, is uncorrelated to the surface morphology. Supported by reciprocal space mapping by x-ray diffraction, this phenomenon is interpreted as the result of strain relaxation via ferroelectric domain formation related to K-Na deficient films displaying a sizable and increasing compressive strain when grown on Nb:SrTiO<subscript>3</subscript>. Our findings suggest that strain engineering strategies in thin films could be used to stabilize specific configurations of piezo- and ferroelectric domains. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
134
Issue :
20
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
173977718
Full Text :
https://doi.org/10.1063/5.0171349