1. Topological domain-engineered antiferroelectric-like behavior with enhanced energy storage properties in ferroelectric hexagonal Cr-doped YMnO3.
- Author
-
Yin, L.H., Yang, J.F., Zhang, R.R., Yang, J., Tong, P., Song, W.H., Dai, J.M., Zhu, X.B., and Sun, Y.P.
- Subjects
- *
ENERGY storage , *FERROELECTRICITY , *ENERGY density , *HYSTERESIS loop , *SINGLE crystals , *ELECTRIC fields , *BARIUM titanate , *LEAD titanate - Abstract
We present the observation of the peculiar antiferroelectric (AFE)-like behavior, characterized by the polarization-electric field (P − E) double hysteresis loops and zero remnant polarization (P r), in the ferroelectric (FE) Cr-doped YMnO 3 (YMCO) single crystals. The AFE-like behavior in YMCO is in sharp contrast with the FE P − E single loop with high P r in the undoped YMnO 3 (YMO). The topological cloverleaf domains with ferroelectricity are observed in both YMO and YMCO. It is revealed unambiguously that the AFE-like behavior in YMCO arises from the Cr-substitution induced domain pattern transition from type-II with nonzero net macroscopic polarization to type-I with zero net polarization, as well as the recoverable type-I domain pattern after electric field sweeping. In addition, it is found that both the recoverable energy density and energy storage efficiency are significantly enhanced due to the AFE-like behavior in YMCO compared to YMO. Our results suggest for the first time that, in addition to the mechanism of the antiparallel arrangement of adjacent electric dipoles, the AFE-like behavior can be also achieved by domain engineering in a FE, which provides a possible new strategy to obtain high energy storage performance. [ABSTRACT FROM AUTHOR]
- Published
- 2019
- Full Text
- View/download PDF