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The electrical properties of the Ti/p-GaN Schottky diode were investigated. Fundamental diode parameters such as ideality factor (n), barrier height (Øb) and series resistance (Rs) were analyzed using the traditional I-V method, Cheung functions and Norde method by utilizing current-voltage (I-V) characteristics. The ideality factor (n) was calculated as 1.62 in the I-V method and 3.54 from the Cheung functions. It was found that the barrier height (Øb) values calculated from different methods were close to each other. The calculated serial resistance (Rs) values of the Ti / p-GaN Schottky diode were also found to be of the order of kohm. The magnitude of the interface state density of the Ti/p-GaN Schottky diode was determined to vary between 6.35 x 1012 cm-2 eV-1 and 3.48 x 1013 cm-2 eV-1. [ABSTRACT FROM AUTHOR]

In the present study, organic materials Bis(TSC)-Ph and novel Bis(Rh)-Ph were synthesized and used such as interfacial layer for diode applications. Al/Bis(TSC)-Ph/p type Si and Al/Bis(Rh)-Ph/p type Si Schottky diodes were fabricated with spin coating and thermal evaporation methods. The electrical parameters were investigated by using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at various frequencies from 30 kHz to 5 Mhz at room temperature. The effect of frequency on device performance was examined and compared with each other. The some basically parameters such as acceptor concentration (Na), interface states (Nss), Fermi level (Ef) and barrier height (ΦB) were also calculated from C-2-V measurements. According to these results, as expected, it was determined that Bis(Rh)-Ph organic layer, which is containing the rhodanine group, is more suitable than Bis(TSC)-Ph for C-V and G-V performances. [ABSTRACT FROM AUTHOR]

In this study, electrical properties of rectifier contacts obtained by using organic semiconducting pentacene material were investigated. Firstly, Al metal was evaporated on one surface of n-Si wafer for back contact by thermal evaporation and then n-Si was annealed at 450 °C for 10 mininutes. Then, pentacene organic film was deposited on the other surface of n-Si wafer by thermal evaporation. Finally, eight circle Ni contacts with 7.85×10-3 cm-2 area were coated on Pentacene film by sputtering method for the electrical measurements. Current-voltage (I-V) measurements were performed at the room temperature and in dark of Ni/Pentacene/n-Si/Al heterojunction devices. The basic diode parameters such as ideality factors (n) and the barrier heights (Ω) of Ni/Pentacene/n-Si/Al devices were calculated using forward bias I-V curve. The D1 Ni/Pentacene/n-Si/Al heterojunction device showed Schottky behavior with barrier heights of 0.83 eV and ideality factors of 1.41 using thermionic emission (TE) theory. Other devices have similar characteristics. Furthermore, both parameters and series resistance (Rs) of number D1 Ni/Pentacene/n-Si/Al heterojunction device were calculated using different methods as Cheung and Norde functions. [ABSTRACT FROM AUTHOR]

The current-voltage (I-V) data of Ni/n-GaAs Schottky diodes with 50 nm Schottky metal thickness has been measured in the temperature range of 60 K to 320 K. The important contact parameters of Ni/n-GaAs Schottky diodes have been obtained by using conventional I-V method, Norde method, generalized Norde method, and Cheung functions for each temperature. Then, the results have been compared each other. [ABSTRACT FROM AUTHOR]

Metal-Insulator-semiconductor contacts (MIS) have been studied its importance in electronic and optoelectronic. Their importance comes from its so high dielectric constant, storage layer property and effect of capacitance. For this reason, Si3N4 were deposited with PECVD technique on p-type Si about 5 nm thickness layers. The thicknesses of Si3N4 were measured with an elipsometre and obtained MIS contact with Al contact. It was researched the insulator layer effect on the Al/p-Si contact. Its electrical characterizations were inquired by use of the forward and reverse bias I-V, C-V and G-V measurements and were seen that the insulator Si3N4 layer influenced characterizations of the contact. Effect of the interface states (Nss), the series resistance (Rs) and the other some electrical parameters were investigated by calculating from I-V and C-V measurements. It was observed that from the C-V characterizations at 500 kHz dual, contact behaved similarly memristor structure. [ABSTRACT FROM AUTHOR]