Ti/ p-GaN Schottky Diyotunun Elektriksel Parametrelerinin İncelenmesi.

The electrical properties of the Ti/p-GaN Schottky diode were investigated. Fundamental diode parameters such as ideality factor (n), barrier height (Øb) and series resistance (Rs) were analyzed using the traditional I-V method, Cheung functions and Norde method by utilizing current-voltage (I-V) characteristics. The ideality factor (n) was calculated as 1.62 in the I-V method and 3.54 from the Cheung functions. It was found that the barrier height (Øb) values calculated from different methods were close to each other. The calculated serial resistance (Rs) values of the Ti / p-GaN Schottky diode were also found to be of the order of kohm. The magnitude of the interface state density of the Ti/p-GaN Schottky diode was determined to vary between 6.35 x 1012 cm-2 eV-1 and 3.48 x 1013 cm-2 eV-1. [ABSTRACT FROM AUTHOR]