1. Surface-activating-bonding-based low-resistance Si/III-V junctions.
- Author
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J. Liang, S. Nishida, M. Morimoto, and N. Shigekawa
- Subjects
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SEMICONDUCTOR junctions , *CURRENT-voltage characteristics , *SEMICONDUCTOR doping , *ELECTRIC resistance , *ELECTRIC loss in electric power systems , *SOLAR cells - Abstract
The electrical properties of pn junctions, with various semiconductor materials with different doping concentrations fabricated by using surface-activated-bonding (SAB), were investigated by measuring their current-voltage (I-V) characteristics. The I-V characteristics of p+-GaAs/n++-Si, p+-GaAs/n+-Si, p+-Si/n+-Si, p++-Si/n+-InGaP, and p+-Si/n+-InGaP junctions showed ohmic-like properties. The interface resistance and the resultant electrical loss decreased with increasing impurity concentration at the interface. These results demonstrate the significance of SAB for fabricating tandem solar cells. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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