Surface-activating-bonding-based low-resistance Si/III-V junctions.

The electrical properties of pn junctions, with various semiconductor materials with different doping concentrations fabricated by using surface-activated-bonding (SAB), were investigated by measuring their current-voltage (I-V) characteristics. The I-V characteristics of p+-GaAs/n++-Si, p+-GaAs/n+-Si, p+-Si/n+-Si, p++-Si/n+-InGaP, and p+-Si/n+-InGaP junctions showed ohmic-like properties. The interface resistance and the resultant electrical loss decreased with increasing impurity concentration at the interface. These results demonstrate the significance of SAB for fabricating tandem solar cells. [ABSTRACT FROM AUTHOR]