1. Fabrication of all-MgB Josephson junctions using MgO insulator layer
- Author
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Oba, T., Goto, S., Sasaki, S., Nakanishi, Y., Fujino, T., Harada, Y., Nakamura, M., Saito, A., and Yoshizawa, M.
- Subjects
- *
PARTICLES (Nuclear physics) , *THICK films , *ELECTRIC conductivity , *SUPERCONDUCTIVITY - Abstract
Abstract: We report on the fabrication and properties of all-MgB2 tunnel junctions with an MgO barrier. Superconductor–insulator–superconductor (SIS) junctions were fabricated on C-plane sapphire substrates. MgB2 films were grown in an ultra-high vacuum in the 10−9 Torr range. The MgO insulating layer was evaporated using an electron-beam gun. SIS junctions of 30μm in diameter were fabricated by standard photolithography and Ar ion milling techniques. The critical temperature (T C) of the lower MgB2 layer after the SIS junction fabrication process was 36.7K, which remained the same as that of the bare MgB2 film. We observed tunneling behavior in the current–voltage (I–V) characteristics of the present junctions. A superconducting gap was clearly observed at around 2.7mV (=2Δ). [Copyright &y& Elsevier]
- Published
- 2008
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