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Poly-Si film prepared by PECVD method showed low ESR spin density of around 1E16/cm3 and poly-Si film prepared by Cat-CVD method showed relatively low ESR spin density of around 1E17/cm3. The cell using PECVD poly-Si film as a photo-active layer showed an intrinsic cell efficiency of 7.75%. Light confinement micro-structure was introduced to the cell applying RIE method to the glass substrate surface and enhancement of Jsc was observed. [Copyright &y& Elsevier]

Abstract: 57Fe Mössbauer absorber experiments are performed at 1273 and 300K on two different samples of multicrystalline Si (mc-Si), whose minority carrier lifetimes are 41 and 1.5μs, respectively. The samples are deposited with 1.5nm 57Fe, and are annealed and measured simultaneously at 1273K for 1 week. The spectra consist of four singlets at 1273K, and of three singlets at 300K. Comparing the present results with those from 57Fe-deposited CZ-Si single crystal, the 57Fe atoms are found to exist in the mc-Si matrix dominantly as substitutional Fe atoms and different Fe-defect clusters, but not as FeSi2 precipitates. One of the components at 1273K, which yields an isomer shift of 1.1mms−1, appears to be due to interstitial Fe atoms trapped on defects. The fraction depends clearly on the minority carrier lifetime, and therefore, on the quality of the mc-Si samples. [Copyright &y& Elsevier]