1. Single Event Transient Hardness of a New Complementary (npn + pnp) SiGe HBT Technology on Thick-Film SOI.
- Author
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Wilcox, Edward P., Phillips, Stanley D., Cheng, Peng, Thrivikraman, Tushar, Madan, Anuj, Cressler, John D., Vizkelethy, Gyorgy, Marshall, Paul W., Marshall, Cheryl, Babcock, Jeff A., Kruckmeyer, Kirby, Eddy, Robert, Cestra, Greg, and Zhang, Benyong
- Subjects
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RADIATION hardening (Electronics) , *SILICON compounds , *SILICON-on-insulator technology , *HEAVY ions , *THIN film transistors , *ION bombardment , *RADIATION doses , *ROBUST control , *PHASE shift (Nuclear physics) - Abstract
We report heavy-ion microbeam and total dose data for a new complementary (npn + pnp) SiGe on thick-film SOI technology. Measured transient waveforms from heavy-ion strikes indicate a significantly shortened single-event-induced transient current, while maintaining the total dose robustness associated with SiGe devices. Heavy-ion broad-beam data confirm a reduced single event upset (SEU) cross-section in a high-speed shift register circuit. [ABSTRACT FROM AUTHOR]
- Published
- 2010
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