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A Comprehensive Understanding of the Efficacy of N-Ring SEE Hardening Methodologies in SiGe HBTs.
- Source :
-
IEEE Transactions on Nuclear Science . 12/1/2010 Part 1, Vol. 57 Issue 6, p3400-3406. 7p. - Publication Year :
- 2010
-
Abstract
- We investigate the efficacy of mitigating radiation-based single event effects (SEE) within circuits incorporating SiGe heterojunction bipolar transistors (HBTs) built with an N-Ring, a transistor-level layout-based radiation hardened by design (RHBD) technique. Previous work of single-device ion-beam induced charge collection (IBICC) studies has demonstrated significant reductions in peak collector charge collection and sensitive area for charge collection; however, few circuit studies using this technique have been performed. Transient studies performed with Sandia National Laboratory's (SNL) 36 MeV ^16O microbeam on voltage references built with N-Ring SiGe HBTs have shown mixed results, with reductions in the number of large voltage disruptions in addition to new sensitive areas of low-level output voltage disturbances. Similar discrepancies between device-level IBICC results and circuit measurements are found for the case of digital shift registers implemented with N-Ring SiGe HBTs irradiated in a broadbeam environment at Texas A&M's Cyclotron Institute. The error cross-section curve of the N-Ring based register is found to be larger at larger ion LETs than the standard SiGe register, which is clearly counter-intuitive. We have worked to resolve the discrepancy between the measured circuit results and the device-level IBICC measurements, by re-measuring single-device N-Ring SiGe HBTs using a time-resolved ion beam induced charge (TRIBIC) set-up that allows direct capture of nodal transients. Coupling these measurements with full 3-D TCAD simulations provides complete insight into the origin of transient currents in an N-Ring SiGe HBT. The detailed structure of these transients and their bias dependencies are discussed, together with the ramifications for the design of space-borne analog and digital circuits using SiGe HBTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 57
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 57254230
- Full Text :
- https://doi.org/10.1109/TNS.2010.2077651